ALTERNATIVE EUV MATERIALS STATUS AT...
Transcript of ALTERNATIVE EUV MATERIALS STATUS AT...
ALTERNATIVE EUV MATERIALSSTATUS AT IMEC
Resist TWG meeting EUV Resists / Alternative Materials
Maastricht Oct 4th, 2015
Danilo De Simone
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© IMEC 2015
CONTENT
▸ EUV: where we are today
- RLS & NXE requirements
- The Universe of EUV resists today
▸ The introduction to the imec Lab-to-Fab concept
- EUV photo materials vs the imec pathfinding
▸ Summary
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
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At the last EUVL symposium, resist RLS has been ranked as 2nd critical item after
source power in terms of critical items (last year it was ranked 4th)
Target
DOSE
Low Sensitivity
Roughness
Line collapse
ResolutionKey challenges today:
i) Have an high Resolution resist with high Sensitivity, excellent LER and Etch Resistance
ii) Have a resist platform with high extendibility to the next nodes
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
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EUV AND ASML REQUIREMENTS
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
High sensitivity resist
is still required and
still an issue for the
RLS triangle
2015
Source: Alex Chen Photopolymer Conference, Chiba JP 2015
at imec: ASML NXE:3300
and TEL Lithius Pro Z EUV
(since July’15)
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THE UNIVERSE OF EUV RESISTS TODAY IS NOT CAR-PTD ONLY
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
EUVL
CAR PTD
CAR NTD
Molecular Resist
Sensitizer Resist
MCRPhoto Condensable Resist
MCR
Nano Particles
MCR
NT
Resist
Ancillary Materials
(LER smoothing
post process, DDRM,..)
MCR = Metal containing Resist
The resist development has to deal with multiple
challenges:
• Blur effect
• Low Mechanical strength
• Resist non-homogeneity
• Stochastic effects
• Low Photons Absorption
• Fast Dissolution rate
• Poor Etch resistance
Research focus increased significantly in the last
years on alternative resists by various groups
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© IMEC 2015
THE UNIVERSE OF EUV RESISTS TODAY
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
EUVL
CAR PTD
CAR NTD
Molecular Resist
Sensitizer Resist
MCRPhoto Condensable Resist
MCR
Nano Particles
MCR
NT
Resist
Ancillary Materials
(LER smoothing
post process, DDRM,..)
MCR = Metal containing Resist
The resist development has to deal with multiple
challenges:
• Blur effect
• Low Mechanical strength
• Resist non-homogeneity
• Stochastic effects
• Low Photons Absorption
• Fast Dissolution rate
• Poor Etch resistance
not conventional resists
conventional resists
Research focus increased significantly in the last
years on alternative resists by various groups
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© IMEC 2015
THE UNIVERSE OF EUV RESISTS TODAY
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
EUVL
CAR PTD
CAR NTD
Molecular Resist
Sensitizer Resist
MCRPhoto Condensable Resist
MCR
Nano Particles
MCR
NT
Resist
Ancillary Materials
(LER smoothing
post process, DDRM,..)
MCR = Metal containing Resist
The resist development has to deal with multiple
challenges:
• Blur effect
• Low Mechanical strength
• Resist non-homogeneity
• Stochastic effects
• Low Photons Absorption
• Fast Dissolution rate
• Poor Etch resistance
Research focus increased significantly in the last
years on alternative resists by various groups
not conventional resists
The large and complex landscape of EUV resist
requires a new approach to Develop, Evaluate,
Optimize and Integrate novel EUV resist into a
Manufacturing Flow (that is not screening only)
conventional resists
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© IMEC 2015
CONTENT
▸ EUV: where we are today
- RLS & NXE requirements
- The Universe of EUV resists today
▸ The introduction to the imec Lab-to-Fab concept
- EUV photo materials vs the imec pathfinding
▸ Summary
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
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© IMEC 2015
THE IMEC PATH FINDING FOR EUV
PHOTO MATERIALS
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
Lab
-Phas
e 0 Concept and
ExploreLab
-to-F
ab –
Phas
e I
Manufacturing Compatibility
Lab
-to-F
ab -
Phas
e II
Patterning
Fab
–Phas
e III
Integration in a Module
Complexity, Maturity and Time
at imecnot at imec
Novel Resists Novel Resists + Conventional Resists
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COMPLEXITY OF EACH PHASE
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
Cleanroom compatibility
Incoming material check
Contamination Studies
(metals..) at tool level
Outgassing
Hydrides
Process flow
definition
Defectivity
exploration
Rework feasibility
Aging
Patterning
on full field EUV
scanner
Resolution
Sensitivity
Roughness
Process Window
Modeling
Fundamentals
Defectivity
Integration in a module
New patterning schemes
Dry etch
applications
Integration in a process
flowRework
Wet etch
Contam at wafer
level
Phase I – Lab-to-Fab Phase II – Lab-to-Fab Phase III - Fab
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KEY STEPS FOR INITIAL MATERIAL PERFORMANCE CHECK
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
Cleanroom compatibility
Incoming material check
Contamination Studies
(metals..) at tool level
Outgassing
Hydrides
Process flow
definition
Defectivity
exploration
Rework feasibility
Aging
Patterning
on full field EUV
scanner
Resolution
Sensitivity
Roughness
Process Window
Modeling
Fundamentals
Defectivity
Integration in a module
New patterning schemes
Dry etch
applications
Integration in a process
flowRework
Wet etch
Contam at wafer
level
Phase I – Lab-to-Fab Phase II – Lab-to-Fab Phase III - Fab
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MCR - CROSS CONTAMINATION AT TOOL LEVEL
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
1.00E+07
1.00E+08
1.00E+09
1.00E+10
1.00E+11
Monitor, back-side
(post-coat)
Monitor, back-side
(post-coat)
Monitor, back-side
(post-coat)
Control, Not
processed
DRY RUN after
coating
Control, Not
processed
DRY RUN after
coating
Control, Not
processed
DRY RUN after
coating
Detection Limit
at/
cm
2
6 different metal containing materials
tested at imec at level 1 or 2
Possible risk of contamination at HVM
level demonstrated
For RD activities cross contamination always
within the imec warning limit spec (1E10
at/cm2).
Experiments with limited numbers of wafers
warning limit – spec 1E10 at/cm2
Mendeleev Table
Imec contamination risk
by element:
Level 5 = highest risk
White = not assessed yet.
Now:
For RD purpose cross contam test is not
required if:
Metal resist is compatible with existing track
configuration
Metal type is 1 or 2 compliant.
However:
X-contam. test is recommended to increase
knowledge and confidence.
It is mandatory for metal with level 3 or
higher classification
It is mandatory for selected samples that move
to the integration phase, marathon test
included.
IMEC has created the conditions to safely address and
speed up the evaluation of novel metal resists
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MCR – OUTGAS & NEW RISK ASSESSMENT
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
HYDRIDES: New risk assessment is required that mimics optics contamination in scanner environment
[N. Harned, IEUVI Resist TWG, Feb’2015]
▸ MCRs present a metal contamination risk in
the scanner environment where H2 is present
due to the potential formation of metal
hydrides (Mx-Hy)
CC ≤ 10nm (NXE3300) NCC ≤ 0.16% (NXE3300)OUTGAS Spec before Mar2015:
2015 spec conv. CAR :
2015 spec novel materials :
No testing required
Waiver for limited NXE exposures can be obtained from ASML
See Session 2 today TWG meetingOutgassing of CAR and Alternative Resists: The way
forward (Gijsbert Rispens, ASML)
ASML targets a response to the
material supplier within 1 month
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RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
0 4 8 12 16 20 24
N3
N5
N7
N10
ITRS fin-FET fin minimum half-pitch (nm)NXE3300 DIP60X
HP15 ultimate resolution
still margin to improve
Dose to size
Key issue today is the resist sensitivity: Dose is >>20mJ
LEADING EDGE EUV RESISTS VS RESOLUTION
HP13 ultimate resolution
still margin to improve
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LEADING EDGE EUV RESISTS VS LWR ITRS
REQUIREMENTS
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
0.5 1.5 2.5 3.5 4.5 5.5
N3
N5
N7
N10
LWR 3σ (nm) - ITRS
Large gap to cover even working within the Dose
range of 35mJ ÷ 50mJ
Very large gap: litho smooth technique might be not enough to cover the gap.
LWR mitigation litho-etch assisted could help. Substrate can play a great role.
todayCAR PTD
CAR NTD
MCR
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© IMEC 2015
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
10 15 20 25 30 35 40 45 50
N3
N5
N7
N10
Resist Thickness (nm) - ITRS
LEADING EDGE EUV RESISTS VS FILM
THICKNESS
CAR
MCR
Pattern transfer has to be proven
Metal can improve the etch resistance
Novel process module integration schemes should support the development of very thin resist.
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© IMEC 2015
CONTENT
▸ EUV: where we are today
- RLS & NXE requirements
- The Universe of EUV resists today
▸ The introduction to the imec Lab-to-Fab concept
- EUV photo materials vs the imec pathfinding
▸ Summary
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
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© IMEC 2015
SUMMARYStatus-of-the art lithography tools are available at imec to
explore EUV photo materials at leading edge technology.
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
ASML
NXE3300
IMEC has initiated the exploratory work and has introduced the
Lab-to-Fab concept with focus on EUV materials.
Novel Materials are under investigation at different stages today.
MCR are showing promising imaging results comparable
to CAR.
RLS targets, manufacturing compatibility for MCR
and demonstration of integration into a real device
are the challenges today.
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© IMEC 2015
ACKNOWLEDGEMENTS
RESIST TWG MEETING EUV RESISTS / ALTERNATIVE MATERIALS - MAASTRICHT OCT 4TH, 2015 – D. DE SIMONE
▸ ALL THE MATERIAL SUPPLIERS AT IMEC (INPRIA, TOK, JSR, FFEM, NISSAN CHEMICAL, MERCK, BREWER SCIENCE)
FOR CONTINUOUS COLLABORATION ON THE DEVELOPMENT OF NOVEL EUV PHOTO MATERIALS.
▸ ALL THE EQUIPMENT SUPPLIERS AT IMEC (ASML, SCREEN AND TEL) FOR CONTINUOUS COLLABORATION AND
SUPPORT.
▸ MY COLLEAGUES AT IMEC: IVAN POLLENTIER, PHILIPPE FOUBERT, MIEKE GOETHALS, NADIA VANDENBROECK,
CONTAMINATION GROUP, ERIC HENDRICKX, GEERT VANDENBERGHE, KURT RONSE, GREG McINTYRE
Thank-you for Your Attention
Q&A