A Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS...

22
A Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

description

A Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101). Memory-information retention Various forms of storage are: Primary storage Secondary and off-line storage Tertiary and database storage Network storage Characteristics of storage are: - PowerPoint PPT Presentation

Transcript of A Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS...

Page 1: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

A Presentation on

“OUM ““(OVONIC UNIFIED MEMORY)”

Submitted by:

Aakash Singh Chauhan (CS 05101)

Page 2: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

Memory-information retention

• Various forms of storage are:o Primary storageo Secondary and off-line storageo Tertiary and database storageo Network storage

• Characteristics of storage are:o Volatility of informationo Ability to access non-contiguous informationo Ability to change information

• Classification of the Memory on the bases of Volatility of information is:o Volatile Memory

• Non-volatile Memory

Page 3: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

• Nonvolatile Memory

• Protection of data in the event of power loss • Periodic refreshing • Modern Approaches of Nonvolatile Memory

• FRAM: Technique used- ferroelectricity • MRAM: Technique used-ferromagnetism • OUM: Technique used- phase changes in the thin-film • 3DM: Technique used- multiple layers of active circuitry on the silicon

substrate

Page 4: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

Comparison of Technologies

AAAKASH

Page 5: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

• Phase Change Memory Technology o Describes a class of non-volatile memory devices o Exploits differences in the electrical resistivity of a material in

different phases (solid, liquid, gas, condensate and plasma)

Graphical representation of a basic PCM storage element

AAAKASH

Page 6: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

• Relative to the amorphous state, the polycrystalline state shows a dramatic increase in free electron density, similar to a metal.

AAAKASH

Page 7: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

OUM

Ovonic Unified Memory

Page 8: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

OUM• Definition:

o Phase Change Memory o Changes the stateo stores informationo excellent solid-state memory properties.

• Ovonyx o microelectronics memory technology o developed by Mr. Stanford Ovshinsky o Energy Conversion Devices (ECD) Inc.

• Ovonic unified memory – o derived from ''Ovshinsky'' and ''electronic''. o known as phase change memory

• OUM allows the rewriting of CD & DVDs .

Page 9: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

Characteristics of OUM• Essentially nondestructive use: Can be read and write to trillionths of

times• The OUM solid-state memory

o Has cost advantages over conventional solid-state memories o very small active storage media, and simple device structure.o OUM requires fewer steps in an IC manufacturing process

resulting in : reduced cycle times, fewer defects, and greater manufacturing flexibility.

AAAKASH

Page 10: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

• Chalogenide• The PCM technology being developed by Intel uses a class of materials known as

chalcogenides (“kal-koj--uh-nyde”). • Basically, chalogenide alloy materials use one or more elements from column VI of the Periodic

Table. OUM devices use an alloy system of GeSbTe (Germanium-Antimony-Tellurium). • Chalcogenides are alloys that contain an element in the Oxygen/Sulphur family of the Periodic

Table (Group 16 in the new style or Group VIa in the old style Periodic Table).

AAAKASH

Page 11: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

• OUM Devices use the GeSbTe alloy system. • Crystal Structures for GeSbTe Pseudobinary

Alloys:

Page 12: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

• Working

• Phase change memory also called ovonic unified memory (OUM), • Phase states are programmed by the application of a current pulse

through a Mosfet, • heating a small volume of the material with a current pulse to make

the transition.

Page 13: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

• thermally activated, rapid, reversible change

• chalcogenide alloy are an amorphous state and a polycrystalline state.

• polycrystalline state :dramatic increase in free electron density, similar to a metal.

Page 14: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

• Depending upon the temperature profile applied,

Page 15: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

• Attributes of OUMo Non volatile in natureo High density ensures large storage of data within a

small areao Non destructive read:-ensures that the data is not

corrupted during a read cycle.o Uses very low voltage and power from a single

source.o Write/erase cycles of 10e12 are demonstratedo Poly crystallineo This technology offers the potential of easy addition

of non volatile memory to a standard cmos process.o This is a highly scalable memory

• Low cost implementation is expected.

AAAKASH

Page 16: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

Architecture of OUM

• resistance change is very large-more than a factor of 100. • Thermal insulators are also attached to the memory structure in order to

avoid data loss due to destruction of material at high temperatures.• To write data into the cell, the chalcogenide is heated past its melting point

and then rapidly cooled to make it amorphous. • To make it crystalline, it is heated to just below its melting point and held

there for approximately 50ns, giving the atoms time to position themselves in their crystal locations.

AAAKASH

Page 17: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

• Ovonic materials • The chalcogenide glasses (especially those based on Ge, Sb and

Te) are key materials o for the electrical switches,o for erasable optical storage.

• The ground ovonic material is Ge15Te81S2Sb2.• This is a memory material.

o It isanalogous of Ge15Te85 o it represents a eutectic composition in the binary system Te-Ge

(eutectic temp. 375 oC). o Addition of S and Sb changes the crystallization speed when the

material is heated in the glassy state.

AAAKASH

Page 18: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

• Data storage mechanism• Devices store information through changes in their atomic structures

• Materials which are multi-element chalcogenide alloyso exist in a stable fashion in amorphous and crystalline structures,

and o also in a range of “intermediate” structural states.

o These different atomic structures have o different characteristic physical properties, o including different values of electrical conductivity. The ability of a

memory device to be programmed to stable intermediate structures allows: storage of multiple bits of information in each memory cell location,

AAAKASH

Page 19: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

Advantages of OUM• reversible structural phase change.• Small active storage medium.• Simple manufacturing process.• Simple planar device structure.• Low voltage single supply.• Reduced assembly and test costs.• Highly scalable- performance • Multistates.• High temperature resistance.• base technology is not affected.

Page 20: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

Problems/Concerns of OUM

• OUM devices as devices decrease in size• as the devices are scaled to smaller sizes,• reducing programming current for lower

voltage and lower power operation.

Page 21: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

• Application• stored as a structural phase • impervious to ionizing radiation effects. • tolerance of the chalcogenide material • A radiation hardened semiconductor technology • OUM allows the rewriting of CD & DVDs • OUM has direct applications

o computers, o cell phones, o graphics-3D rendering, o GPS, o video conferencing, o multi-media, o Internet networking and interfacing, o digital TV, o telecom, o PDA, o digital voice recorders, o modems, o DVD, o networking (ATM), o Ethernet, and pagers.

OUM offers a way to realize full system-on-a-chip

Page 22: A  Presentation on “OUM “ “(OVONIC UNIFIED MEMORY)” Submitted by: Aakash Singh Chauhan (CS 05101)

Thank You!