A Data Remanence based Approach to Generate 100%...

International Symposium on Low Power Electronics and Design

A Data Remanence based Approach to Generate 100% Stable Keys from

an SRAM Physical UnclonableFunction

Muqing Liu, Chen Zhou, Qianying Tang, Keshab K. Parhi and Chris H. Kim

University of Minnesota, Twin Cities

[email protected]

• Introduction and Motivation

• Proposed Data Remanence based Approach

• SRAM PUF Measurement Results

• Summary

2

Outline




• Summary

3

Outline

4

Key Storage: Flash Memory

• Concerns: Process overhead; vulnerable to invasive/semi-invasive attacks.

5

Key Generation: SRAM based PUF

• Strength: No process overhead, negligible implementation effort.

Power-up state Uncontrollable process variationWL

BL BLBStable ‘1’Stable ‘0’ Unstable

6

Key Generation: SRAM based PUFUnique keySRAM array

Column Circuit

Ro

w C

ircu

it

Ctrl.

Stable ‘1’

Unstable

Stable ‘0’

• Concerns: Intrinsic mismatch of a SRAM cell not always large enough to generate stable responses.

Temporal Majority Voting (TMV)

• TMV: Repetitively test the PUF responses and take the majority value as the final output.

• Cons: Costly and time consuming, hardware overhead, cannot find absolutely stable bits.

6




• Summary

8

Outline

9

Data Remanence based Approach

10


0

10

20

30

40

50

60

70

80

-25 -15 -5 5 15 25

Tfl

ip (

a.u

.)

Vmismatch (mV)

65nm LP, 25oC, TT, simulation

Stronger ‘0’ Stronger ‘1’

WL

BL BLB

Q QB

Vmismatch

Tflip

VDD SRAM data flips

• The first few cells to flip after the brief power down period are the most strongly biased cells.

• PXI based data acquisition system: provides pulsed power supply and digital signals.

• Power supply: stress the chip.

• Off-the-shelf SRAM chips: 512 kbit from Microchip Technology.

11

Measurement Set Up

Flip Ratio vs. Power Down Period

12

Strongest ‘1’

5

10

15

20

25

30

5

10

15

20

25

30

5

10

15

20

25

30

5

10

15

20

25

30

5 10 15 20 25 30 5 10 15 20 25 30

5 10 15 20 25 30 5 10 15 20 25 30

Data ‘1’ Data ‘0’

PD=130ms

PD=150ms

PD=140ms

PD=160ms

Ro

w #

Ro

w #

Ro

w #

Ro

w #

Column # Column #

Column # Column #

13

Cell Flip Map for Writing ‘0’

• Strongest ‘1’ cell always flips.

14

Strongest ‘0’

5

10

15

20

25

30

5

10

15

20

25

30

5

10

15

20

25

30

5

10

15

20

25

30

5 10 15 20 25 30 5 10 15 20 25 30

5 10 15 20 25 30


5 10 15 20 25 30

PD=130ms

PD=150ms

PD=140ms

PD=160ms

Ro

w #

Ro

w #

Ro

w #

Ro

w #

Column # Column #

Column # Column #

Cell Flip Map for Writing ‘1’

• Strongest ‘0’ cell always flips.

15

• Bit index is sorted from strongest ‘0’ to strongest ‘1’.

SRAM Data Remanence for Data ‘1’

0.2k

0.4k

0.6k

0.8k

1.0k100 125 150 175 200 225

128 bits256 bits

512 bits

Target pulse width

Bit

in

de

x (

so

rted

by

rete

nti

on

tim

e)

Power Down Period (ms)

0.0k100k

200k

300k

400k

500k

Data ‘1’

Data ‘0’0k

225 350 475 600100

16

• Bit index is sorted from strongest ‘0’ to strongest ‘1’.

SRAM Data Remanence for Data ‘0’B

it i

nd

ex (

so

rted

by

rete

nti

on

tim

e)

Power Down Period (ms)

100k

200k

300k

400k

500k

0k

225 350 475 600100

100 125 150 175 200 225

523.5k

523.7k

523.9k

524.1k

524.3k128 bits

256 bits

512 bitsTarget pulse width

Data ‘0’

Data ‘1’

17

Data Remanence and PUF Test Flow

Turn off power, wait for Trequire

Turn on power,

read out data

Record flip locations

Response (Keys)

Write all ‘1’ or ‘0’

Store stable bit location

Stable bit location

Power on SRAMTurn off power,

wait for time T

Turn on power, read out data

Record flip

location(s)

Write all ‘1’ or ‘0’

Data Remanence

Test

Trequire = T

SRAM PUF Operation

Enrollment Key Generation

Tmin < T < Tmax ?

Key length

Yes

No




• Summary

18

Outline

• Average inter-chip Hamming distance is 0.4935 (ideally close to 0.5).

19

Uniqueness of Generated Key

Chip 1


Chip 2

Chip 3 Chip 4

256-bit Key

• Average intra-chip Hamming distance is 0 under different temperatures.

20

PUF Stability: Temperature Effect

T = 80oCT = 25oCT = -10oC


Power up ramp time = 0.78V/µs

Data ‘0’Data ‘1’

• Average intra-chip Hamming distance is 0.0026.

21

T = 80oCT = 25oCT = -10oC

TMV Selected Stable Cells


Data ‘0’Data ‘1’Unstable cell


22

T = 80oCT = 25oC

Randomly Selected Cells


Data ‘0’Data ‘1’Unstable cells

T = -10oC



23


T = -10oC




Data ‘0’Data ‘1’

• Average intra-chip Hamming distance is 0 under different power ramp up rates.

PUF Stability: Power Up Ramp Effect

24

TMV Selected Stable Cells

T = -10oC







25

Randomly Selected Cells

T = -10oC







TMV selected stable cells

Unstable cells Data ‘0’Data ‘1’

Randomly selected cells

T =

80

oC

T =

25

oC

T =

-10

oC

This workPower up ramp time = 0.78V/µs



Avg. Intra-chip Hamming distance = 0 Avg. Intra-chip Hamming distance = 0.0091 Avg. Intra-chip Hamming distance = 0.0712

Power up ramp

time = 0.78V/µs

Power up ramp

time = 1.25V/µs

Power up ramp

time = 8.33V/µs

Power up ramp

time = 0.78V/µs

Power up ramp

time = 1.25V/µs

Power up ramp

time = 8.33V/µs

Overall PUF Stability Test

27

• 100% of the cells selected using proposed technique remain stable under device aging test.

Stress Time (hrs)0 10 20 30 40 50 60 70 80

0

0.05

0.1

0.15

0.2

Intr

a-c

hip

Ha

mm

ing

D

ista

nc

e

Stress: 1.5*Vnom, Measure: Vnom, 25oC

This work (256, 512, 1024-bit)

TMV (256, 512, 1024-bit)

Random (256, 512, 1024-bit)

PUF Stability: Aging Effect

• Proposed a data remanence based technique by momentarily shutting down the power supply to select the most stable cells as the key.

• Measurement results confirmed 100% key stability under different conditions:

– Temperature variations.

– Power ramp up rate variations.

– Device aging effect.

28

Summary

This research has been supported by the National Science Foundationunder grant number CNS-1441639 and the semiconductor researchcorporation under contract number 2014-TS-2560.

Acknowledgements

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