35 - keirex.com · Silicon Integration Initiative. Innovation Through Collaboration. We have Many...
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Transcript of 35 - keirex.com · Silicon Integration Initiative. Innovation Through Collaboration. We have Many...
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Innovation Through Collaboration
Open Parasitic ExtractionJake BuurmaVice President
DAC 2011
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Presentation Overview
• Introduction• Process Parameters• Architecture• A Few Details• Next Steps
6/8/2011 4
The yield loss due to an improper process parameter is much harder to
find and fix than a DRC error or a similar observable yield detractor
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We have Many Process Parameters
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Width
Vias
Dielectric 1
Dielectric 2
150 + process parameters are required to describe multi-layer chips
Permittivity
+
Capacitance
Resistance
Tungsten
Copper
Thickness
Height
Space
Permittivity Resistance ProfilesCapacitance Dimensions
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And Many Formats to Describe Them
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Rather than developing yet another transfer format, OPEX decided to build an open, unified database of standardized parameters which is a superset of the commercial formats
TIProcess
Data
MIPTProcess
Data
UMCProcess
Data
ICTProcess
Data
iRCXProcess
Data
ITFProcess
Data
The key problems that OPEX needs to solve:Integrity, Accessibility, Flexibility and Fit into existing design flows
Process Parameter FormatsMany commercial formats have existed for years from both the EDA tool makers and the Silicon Foundries
No one disagrees that there should be a single, standard format but until now, no one had the answer
IBMProcess
Data
NSCProcess
Data
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Process Parameters are Critical
• The Resistivity (or Rho) in Ohms*Meters or Ohms*Microns• The Resistance Per Square (RPSQ) or Sheet Resistance (R_Sheet)• The Drop Factor and the Lateral Spacing parameters for non-planar conductors• The side angle for the shift from vertical at the sides of a conductor• The sidewall and topwall thickness of a conformal dielectric around a conductor• The damage to the dielectric at the interface below a conductor• The change in a conductor’s bottom thickness due to low-k damascene• The change in a conductor’s thickness due to width, space and local density • The ∆R and ∆C due to CMP, Etch, Temperature, Metal Fill, and Pattern Density
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Hundreds of parameters, scattered across thousands of lines of process parameter format files, are required for chip design
Critical parameters that are missing, corrupted or delayed are a cause of clinically dead chips or chips with a very high yield loss
plus more than another hundred process parameters?
Does your design team have the accurate process parameter for:
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Process Parameter Pitfalls
• Zero Mistakes – You are a true technology and
market leader (Please join us!)• 1- 2 Mistakes
– You lose $1M+ for a Respin and 1Q of Product Delay
• 3 - 4 Mistakes– You lose $5M+ for Respins
and 3Q of Product Delay
• 5+ Mistakes– You lose $10M+ for Respins
and 1Years+ of Product Delay6/8/2011 8
What if you use the wrong parameter or a corrupted parameter?
What if Silicon Foundries got together
with the top EDA Vendors and
with Fabless Semiconductor companies
and the leader in Open Standards?
An Industry Standard for Process Parameters
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Building the Bridge to OPEX
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Opex Co Chair
OPEX Co Chair
ITF Contributor
MIPT Contributor
ICT Contributor
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Improving Efficiency and Interoperability
OpenAccess OAOpenPDK OPDKOpenAccess Scripting OASOpen Modeling Interface OMIOpen Process Specification OPSOpen DFM ODFMOpen Parasitic Extraction OPEX
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Si2: the World Leader in Open Standards
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Architecture: One Database for All Parameters
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SQLiteStandardProcess
Parameters
In
OPEX
Out
OPEX is a superset of standardized process parameters from all contributed formats
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Openness By the Numbers• Process Parameter Input Formats
– MIPT, ICT and ITF
• Database Output Formats– SQLite, XML and YAML
• Scripting Language Access– Perl, Python, Ruby, Tcl and C#
• Database for all Process Parameters
• Effort to access any process parameter, from any input format, with any scripting language
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3
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Scripting Language Access
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• 5 Scripting Languages with easy access to any Process Parameter from any format
• Direct database API to SQLite takes only 10 - 20 lines
• YAML and XML file formats are used for the text files
A Few Details
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Imported Process Parameters
OpenAccess APIC++
Programming Interface
EDA Programmer Centric
Tcl API
Type Mapping
Ruby API
Type Mapping
Perl API
Type Mapping
Python API
Type Mapping Common Wrapper Architecture
Interface
Language-Specific Bindings
Common SWIG Framework
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Type Mapping
C# API
XML FileYAML FileSQLite Database
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See Our DAC 2011 Proof of Concept Demo
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StandardizedParameters
Conversionto/from
StandardParameters
NoConversion API
Interface
Parameters from Commercial Transfer Formats Analyzed in Excel
An interface to a scripting languagetakes about a dozen lines of code
XMLOut
YAMLOut
XML
YAML
MIPTFile
ICTFile
ITFFile
OPEXParser
ITFIn
ICTIn
MIPTIn
Tcl, PythonPerl, Rubyand C# onOpenAccess
SQL
ExcelProcess
ParameterVisualization
Process Parametersin an SQLite database
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Plasma Etch and the Physics of Conductors
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RIE LagMicro Loading
Plasma species depletionslows the etching process
for narrow spaces
ConstantWidth
VaryingSpace
ConstantSpace
VaryingWidth
Plasma species can not reach the trench bottom of narrow widths
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Database AdvantagesWhy put process parameters into a SQLite binary database?
• SQLite databases are small and portable across Operating SystemsXML databases are 3X – 5X larger
• Fabless semiconductor companies require visualization of subtle process variations and relationships
• Comparison of the data from two different PDKs is fast and efficient
• Calculation of certain derived data such as conductor heights requires parsing the entire parameter file
Source: Synopsys
Conductor
Conductor
Conductor
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Process Parameter Visualization
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Conductor
Largest variation occurs at a specific width and space mid range and not at a boundary
Largest variation occurs for narrow widths and space occurs at the table boundaries
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OPEX: Next Steps• Update OPEX for 20nm – 32nm process parameters
– Via etch as a function of length and width ( i.e. Not a square)– Area dependent temperature coefficients for via resistance– Model format for Through Silicon Vias (TSV) for 3D ICs– Model format for silicon interposers with thousands of TSV/cm2
– Support for fast 3D field solvers and faster pattern recognition– Conductor layer resistance/capacitance modeled by 3D geometry– Critical area parameters and yield model prediction coefficients– Gate biasing to optimize the gate length to power and performance– Process variability models for statistical process characterization– Direct integration of SQL at the C++ API on Open Access
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The public release of OPEX is at the end of 2011. OPEX members receive at least 90 days early access, the parser, source code and contributed test cases
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OPEX Deliverables• Public Deliverables
– The OPEX standard will be a specification of process parameter names, definition, units, ranges and relationships for a standardized open process design kit (OPDK)
– Press release with summary of the Beta Test results and quotes from selected OPEX members
• OPEX Member Deliverables– All public deliverables– Source code of the OPEX parser that translates from ITF, ITC
and MIPT into SQLite, XML and YAML– Source code of pre-packaged scripts to analyze and visualize
process sensitivity across normal manufacturing variations– Example files and a self running demo of the translation from the
contributed commercial formats into the SQLite database– Quality Assurance test cases and their expected results
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• Ken Potts, Cadence, for the contribution of the ICT format
• Kevin Kranen, Synopsys, for the contribution of the ITF format
• David Abercrombie, Mentor, for the contribution of the MIPT Format
• James Master, Intel, for the Ruby interface into SQLite
• Steve Potter, Altera, for the Python interface into SQLite
• John McGehee, Voom, for the C# interface into SQLite
• Brandon Barclay, Intel, for the Perl interface into SQLite
• Cole Zemke, IBM, for the Example file of process parameters
Acknowledgements
Thank You
