2SK2485

MOS FIELD EFFECT TRANSISTOR

DESCRIPTIONThe 2SK2485 is N-Channel MOS Field Effect Transistor designed

for high voltage switching applications.

FEATURES Low On-Resistance

RDS (on) = 2.8 (VGS = 10 V, ID = 3.0 A) Low Ciss Ciss = 1 200 pF TYP. High Avalanche Capability Ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)Drain to Source Voltage VDSS 900 V

Gate to Source Voltage VGSS 30 VDrain Current (DC) ID (DC) 6.0 ADrain Current (pulse)* ID (pulse) 12 ATotal Power Dissipation (Tc = 25 C) PT1 100 W

Total Power Dissipation (TA = 25 C) PT2 3.0 W

Channel Temperature Tch 150 C

Storage Temperature Tstg 55 to +150 C

Single Avalanche Current** IAS 6.0 A

Single Avalanche Energy** EAS 42.3 mJ

* PW 10 s, Duty Cycle 1 %** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0

2SK2485SWITCHING

N-CHANNEL POWER MOS FETINDUSTRIAL USE

Document No. D10279EJ1V0DS00 (1st edition)Date Published August 1995 PPrinted in Japan

PACKAGE DIMENSIONS

(in millimeter)

1.00.2

1 2 3

1. Gate2. Drain3. Source4. Fin (Drain)

MP-88

4

15.7 MAX. 3.20.2

2.80.10.60.12.20.2

5.45 5.45

4.7 MAX.1.51.

06.

0

7.0

19 M

IN.

20.0

0.

23.

00.

2

4.5

0.2

BodyDiode

Source

Drain

Gate

1995

DATA SHEET

2SK2485

2

ELECTRICAL CHARACTERISTICS (TA = 25 C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS (on) 2.2 2.8 VGS = 10 V, ID = 3.0 A

Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 2.0 VDS = 10 V, ID = 3.0 A

Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0

Gate to Source Leakage Current IGSS 100 VGS = 30 V, VDS = 0

Input Capacitance Ciss 1200 VDS = 10 V

Output Capacitance Coss 170 VGS = 0

Reverse Transfer Capacitance Crss 30 f = 1 MHz

Turn-On Delay Time td (on) 20 ID = 3.0 A

Rise Time tr 10 VGS = 10 V

Turn-Off Delay Time td (off) 70 VDD = 150 V

Fall Time tf 15 RG = 10 RL = 50

Total Gate Charge QG 40 ID = 6.0 A

Gate to Source Charge QGS 7 VDD = 450 V

Gate to Drain Charge QGD 17 VGS = 10 V

Body Diode Forward Voltage VF (S-D) 1.0 IF = 6.0 A, VGS = 0

Reverse Recovery Time trr 740 IF = 6.0 A, VGS = 0

Reverse Recovery Charge Qrr 4.0 di/dt = 50 A/s

UNIT

V

S

A

nA

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

C

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

Test Circuit 3 Gate Charge

VGS = 20 - 0 VPG

RG = 25

50

D.U.T.L

VDD

Test Circuit 1 Avalanche Capability

PG. RG = 10

D.U.T.RL

VDD

Test Circuit 2 Switching Time

RG

PG.

IG = 2 mA

50

D.U.T.RL

VDD

IDVDD

IASVDS

BVDSS

Starting Tch

VGS0

t = 1 usDuty Cycle 1 %

VGSWave Form

IDWave Form

VGS

ID

10 %

10 %

0

0

90 %

90 %

90 %

10 %

VGS (on)

ID

ton toff

td (on) tr td (off) tft

2SK2485

3

TYPICAL CHARACTERISTICS (TA = 25 C)

FORWARD BIAS SAFE OPERATING AREA

VDS - Drain to Source Voltage - V

ID -

Dra

in C

urre

nt -

A

DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGE


ID -

Dra

in C

urre

nt -

A

FORWARD TRANSFER CHARACTERISTICS

VGS - Gate to Source Voltage - V

ID -

Dra

in C

urre

nt -

A

0.1

DERATING FACTOR OF FORWARD BIASSAFE OPERATING AREA

TC - Case Temperature - C

dT -

Per

cent

age

of R

ated

Pow

er -

%TOTAL POWER DISSIPATION vs.CASE TEMPERATURE

TC - Case Temperature - C

PT

- Tot

al P

ower

Dis

sipa

tion

- W

0 200 20 40 60 80 100 120 140 160

20

40

60

80

100

40 60 80 100 120 140 160

140

120

100

80

60

40

20

0.11

1

10

100

10 100 1 000

TC = 25 CSingle Pulse

0 8 12 16

4

1.0

10

100 Pulsed

8

4

0

Pulsed

5 10 15

ID(pulse)

RDS(o

n) Lim

ited

PW = 10 s

100 s1 ms10 ms

Power Dissipation Limited

VGS = 20 V10 V8 V6 V

TA = 25 C25 C75 C

125 C

2SK2485

4

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

PW - Pulse Width - s

rth(t

) - T

rans

ient

The

rmal

Res

ista

nce

- C

/W

FORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT

ID - Drain Current - A

| yfs |

- For

war

d Tr

ansf

er A

dmitt

ance

- S

DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE

VGS - Gate to Source Voltage - V

RD

S(o

n) -

Dra

in t

o S

ourc

e O

n-S

tate

Res

ista

nce

-

0 4

DRAIN TO SOURCE ON-STATERESISTANCE vs. DRAIN CURRENT

GATE TO SOURCE CUTOFF VOLTAGE vs.CHANNEL TEMPERATURE

Tch - Channel Temperature - C

VG

S(o

ff) -

Gat

e to

Sou

rce

Cut

off

Vol

tage

- V


RD

S(o

n) -

Dra

in t

o S

ourc

e O

n-S

tate

Res

ista

nce

-

2

0.1

10

0.001

0.01

0.1

1

100

1 000

1 m 10 m 100 m 1 10 100 1 000 10

VDS = 20 VPulsed

0.01 0.1

1.0

10

100

1.0 10

2

8 12

Pulsed

4

1.0 10

PulsedVGS = 10 V

0

3

VDS = 10 VID = 1 mA

50 0 50 100 150

2

0.1

Single PulseTc = 25 C

4

Rth(ch-a) = 41.7(C/W)

Rth(ch-c) = 1.25(C/W)

6 ID = 6 A3 A

1.5 A

6

100

TA = 25 C25 C75 C

125 C

2SK2485

5

DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURE

Tch - Channel Temperature - C

RD

S(o

n) -

Dra

in t

o S

ourc

e O

n-S

tate

Res

ista

nce

-

1

50

2

0 50 100 150

VGS = 10 VID = 3 A

VG

S -

Gat

e to

Sou

rce

Vol

tage

- V

REVERSE RECOVERY TIME vs.DRAIN CURRENT


trr -

Rev

erse

Rec

over

y tim

e - n

s

di/dt = 50 A/ sVGS = 0

1.00.1

100

1 000

1.0 10 100

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

Qg - Gate Charge - nC

0 10 20 30 40

2

4

6

8

10

12

14

16

0

CAPACITANCE vs. DRAIN TOSOURCE VOLTAGE


Cis

s, C

oss,

Crs

s - C

apac

itanc

e - p

F

100.1

100

1 000

10 000

1 10 100

VGS = 0f = 1 MHz

Ciss

Crss

Coss

3

4

SWITCHING CHARACTERISTICS


td(o

n), t

r, td

(off

), tf

- Sw

itchi

ng T

ime

- ns

1.00.1

10

100

1 000

1.0 10 100

VDD = 150 VVGS = 10 VRG = 10

trtf

td(off)

td(on)

5

10 000ID = 6 A

VDD = 450 V300 V150 V

SOURCE TO DRAIN DIODEFORWARD VOLTAGE

VSD - Source to Drain Voltage - V

ISD -

Dio

de F

orw

ard

Cur

rent

- A

0.1

0

1

10

100

0.5

Pulsed

1.0 1.5

VGS = 10 VVGS = 0 V

2SK2485

6

SINGLE AVALANCHE CURRENT vs.INDUCTIVE LOAD

L - Inductive Load - H

IAS -

Sin

gle

Ava

lanc

he C

urre

nt -

ASINGLE AVALANCHE ENERGY DERATING FACTOR

Starting Tch - Starting Channel Temperature - C

Ene

rgy

Der

atin

g Fa

ctor

- %

1.0

025

10

100

100 1 m 10 m 100 m

VDD = 150 VVGS = 20 V 0RG = 25

2

8

12

16

50 75 100 125 150

VDD = 150 VRG = 25 VGS = 20 V 0IAS 6.0A

10

6

4

14

0.1

IAS = 6.0 AEAS = 42.3 mJ

2SK2485

7

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

2SK2485

8

No part of this document may be copied or reproduced in any form or by any means without the prior writtenconsent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in thisdocument.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectualproperty rights of third parties by or arising from use of a device described herein or any other liability arisingfrom use of such device. No license, either express, implied or otherwise, is granted under any patents,copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons orproperty arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safetymeasures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:Standard, Special, and Specific. The Specific quality grade applies only to devices developed based ona customer designated quality assurance program for a specific application. The recommended applicationsof a device depend on its quality grade, as indicated below. Customers must check the quality grade of eachdevice before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems or medical equipment for life support, etc.

The quality grade of NEC devices in Standard unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade,they should contact NEC Sales Representative in advance.Anti-radioactive design is not implemented in this product.

M4 94.11

[MEMO]

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

COVERDESCRIPTIONFEATURESABSOLUTE MAXIMUM RATINGS (TA = 25 degree)PACKAGE DIMENSIONSELECTRICAL CHARACTERISTICS (TA = 25 degree)TYPICAL CHARACTERISTICS (TA = 25 degree)REFERENCE

2SK2485

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