25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier · ype: 780019 Typical Performance Over 20 MHz -...
10
1 Subject to change without notice. www.cree.com/wireless CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package. Features • 17 dB Small Signal Gain • 25 W Typical P SAT • Operation up to 50 V • High Breakdown Voltage • High Temperature Operation • 0.5” x 0.5” total product size Applications • Ultra Broadband Amplifiers • Test Instrumentation • EMC Amplifier Drivers Rev 3.1 – April 2012 PN: CMPA0060025F Package Type: 780019 Typical Performance Over 20 MHz - 6.0 GHz (T C = 25˚C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain 21.4 20.1 19.3 16.7 16.6 16.8 15.7 15.5 dB Output Power @ P IN = 32 dBm 26.9 30.2 26.3 23.4 24.5 24.0 20.9 18.6 W Power Gain @ P IN = 32 dBm 12.3 12.8 12.2 11.7 11.9 11.8 11.3 10.7 dB Efficiency @ P IN = 32 dBm 63 55 40 31 33 31 28 26 % Note 1 : V DD = 50 V, I DQ = 500 mA Figure 1.
Transcript of 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier · ype: 780019 Typical Performance Over 20 MHz -...
1Subject to change without noticewwwcreecomwireless
CMPA0060025F25 W 20 MHz-6000 MHz GaN MMIC Power Amplifier
Creersquos CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) GaN has superior properties compared to silicon or gallium arsenide including higher breakdown voltage higher saturated electron drift velocity and higher thermal conductivity GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package
Features
bull 17 dB Small Signal Gain
bull 25 W Typical PSAT
bull Operation up to 50 V
bull High Breakdown Voltage
bull High Temperature Operation
bull 05rdquo x 05rdquo total product size
Applications
bull UltraBroadbandAmplifiers
bull Test Instrumentation
bull EMCAmplifier
Drivers
Rev 3
1 ndash
Ap
ril 2
01
2
PN CMPA0060025FPackage Type 780019
Typical Performance Over 20 MHz - 60 GHz (TC = 25˚C)
Parameter 20 MHz 05 GHz 10 GHz 20 GHz 30 GHz 40 GHz 50 GHz 60 GHz Units
Gain 214 201 193 167 166 168 157 155 dB
Output Power PIN = 32 dBm 269 302 263 234 245 240 209 186 W
Power Gain PIN = 32 dBm 123 128 122 117 119 118 113 107 dB
EfficiencyPIN = 32 dBm 63 55 40 31 33 31 28 26
Note1 VDD = 50 V IDQ = 500 mA
Figure 1
2 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter Symbol Rating Units
Drain-source Voltage VDSS 84 VDC
Gate-source Voltage VGS -10 +2 VDC
Storage Temperature TSTG -65 +150 ˚C
Operating Junction Temperature TJ 225 ˚C
Maximum Forward Gate Current IGMAX 4 mA
Soldering Temperature1 TS 245 ˚C
Screw Torque τ 40 in-oz
Thermal Resistance Junction to Case RθJC 33 ˚CW
Case Operating Temperature23 TC -40 +150 ˚C
Note1 Refer to the Application Note on soldering at wwwcreecomproductswireless_appnotesasp2 Measured for the CMPA0060025F at PIN = 32 dBm
Electrical Characteristics (Frequency = 20 MHz to 60 GHz unless otherwise stated TC = 25˚C)
Characteristics Symbol Min Typ Max Units Conditions
DC Characteristics
Gate Threshold Voltage2 V(GS)TH -38 -30 -23 V VDS=20V∆ID = 20 mA
Gate Quiescent Voltage V(GS)Q ndash -27 ndash VDC VDD = 50 V IDQ = 500 mA PIN = 32 dBm
Saturated Drain Current IDC ndash 12 ndash A VDS = 12 V VGS = 20 V
RF Characteristics1
Power Output at POUT 45 GHz POUT1 410 428 ndash dBm VDD = 50 V IDQ = 500 mA PIN = 32 dBm
Power Output at POUT 50 GHz POUT2 410 433 ndash dBm VDD = 50 V IDQ = 500 mA PIN = 32 dBm
Power Output at POUT 60 GHz POUT3 410 429 ndash dBm VDD = 50 V IDQ = 500 mA PIN = 32 dBm
DrainEfficiencyatPOUT 45 GHz η1 180 241 ndash VDD = 50 V IDQ = 500 mA PIN = 32 dBm
DrainEfficiencyatPOUT 50 GHz η2 180 280 ndash VDD = 50 V IDQ = 500 mA PIN = 32 dBm
DrainEfficiencyatPOUT 60 GHz η3 180 272 ndash VDD = 50 V IDQ = 500 mA PIN = 32 dBm
Output Mismatch Stress VSWR ndash ndash 5 1 YNo damage at all phase angles VDD = 50 V IDQ = 500 mA PIN = 32 dBm
Small Signal RF Characteristics
S21 S11 S22
Frequency Min Typ Max Min Typ Max Min Typ Max Conditions
002 GHz - 025 GHz 180 193 237 ndash -41 -25 ndash -85 -45 VDD = 50 V IDQ = 500 mA
025 GHz - 05 GHz 180 198 220 ndash -68 -35 ndash -89 -45 VDD = 50 V IDQ = 500 mA
05 GHz - 10 GHz 155 186 220 ndash -153 -65 ndash -67 -45 VDD = 50 V IDQ = 500 mA
10 GHz - 20 GHz 155 186 220 ndash -153 -125 ndash -67 -45 VDD = 50 V IDQ = 500 mA
20 GHz - 30 GHz 130 186 200 ndash -153 -125 ndash -60 -25 VDD = 50 V IDQ = 500 mA
30 GHz - 60 GHz 130 163 200 ndash -142 -65 ndash -53 -25 VDD = 50 V IDQ = 500 mA
Notes1 POUTisdefinedasPIN = 32 dBm2 The device will draw approximately 55-70 mA at pinch off due to the internal circuit structure
3 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Typical Performance
Small Signal Gain Input amp Output Return Losses
vs Frequency at 50 V vs Frequency at 50 V
Small Signal Gain Input amp Output Return Losses
vs Frequency at 40 V vs Frequency at 40 V
15
20
25
Gai
n(d
B)
Small Signal Gain 50V
0
5
10
00 10 20 30 40 50 60
Gai
n(d
B)
Frequency (GHz)
15
20
25
Gai
n(d
B)
Small Signal Gain 40V
0
5
10
00 10 20 30 40 50 60
Gai
n(d
B)
Frequency (GHz)
-10
-5
0
Ret
urn
Loss
(dB
)
Input amp Output Return Losses 50V
-30
-25
-20
-15
00 10 20 30 40 50 60R
etur
nLo
ss(d
B)
Frequency (GHz)
S22
S11
-10
-5
0
Ret
urn
Loss
(dB
)
Input amp Output Return Losses 40V
-30
-25
-20
-15
00 10 20 30 40 50 60
Ret
urn
Loss
(dB
)
Frequency (GHz)
S22
S11
4 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Typical Performance
Output Power at PIN = 32 dBm vs Frequency Power Gain at PIN = 32 dBm vs Frequency
as a Function of Drain Voltage as a Function of Drain Voltage
Drain Efficiency at PIN = 32 dBm vs Frequency
as a Function of Drain Voltage
46
47
48
49
50
Out
putP
ower
(dB
m)
Power at Pin 32 dBm
50V
40V
40
41
42
43
44
45
00 10 20 30 40 50 60
Out
putP
ower
(dB
m)
Frequency (GHz)
12
14
16
18
20
Gai
n(d
B)
Power Gain Pin 32 dBm
50V
40V
0
2
4
6
8
10
00 10 20 30 40 50 60G
ain
(dB
)
Frequency (GHz)
40
50
60
70
Dra
inEf
ficie
ncy
()
Drain Efficiency vs Freqeuncy Pin 32 dBm
50V
40V
0
10
20
30
00 10 20 30 40 50 60
Dra
inEf
ficie
ncy
()
Frequency (GHz)
5 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Typical Performance
Gain vs Input Power at 50V Efficiency vs Input Power at 50 V
as a Function of Frequency as a Function of Frequency
Gain vs Input Power at 40V Efficiency vs Input Power at 40 V
as a Function of Frequency as a Function of Frequency
15
20
25
Gai
n(d
B)
Gain vs Input power 50 V
0
5
10
10 15 20 25 30 35
Gai
n(d
B)
Input Power (dBm)
20 MHz10 GHz20 GHz40 GHz60 GHz
15
20
25
Gai
n(d
B)
Gain vs Input Power
0
5
10
10 15 20 25 30 35
Gai
n(d
B)
Input Power (dBm)
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
40
50
60
70
Effic
ienc
y(
)
EFF vs Input power 50 V
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
0
10
20
30
10 15 20 25 30 35Ef
ficie
ncy
()
Input Power (dBm)
40
50
60
70
Effic
ienc
y(
)
EFF vs Input power 40 V
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
0
10
20
30
10 15 20 25 30 35
Effic
ienc
y(
)
Input Power (dBm)
6 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
General Device Information
TheCMPA0060025FisaGaNHEMTMMICPowerAmplifierwhichoperatesbetween20MHz-60GHzThe
amplifiertypicallyprovides17dBofsmallsignalgainand25Wsaturatedoutputpowerwithanassociatedpower
addedefficiencyofbetterthan20Thewidebandamplifierrsquosinputandoutputareinternallymatchedto50Ohm
TheamplifierrequiresbiasfromappropriateBias-TrsquosthroughtheRFinputandoutputports
TheCMPA0060025FisprovidedinaflangepackageformatTheinputandoutputconnectionsaregoldplated
to enable gold bond wire attach at the next level assembly
Themeasurementsinthisdatasheetweretakenondeviceswire-bondedtothetestfixturewith2milgold
bond wires The CMPA0060025F-TB and the device were then measured using external Bias-Trsquos (TECDIA TBT-
H06M20 or similar) as shown in Figure 2 The Bias-Trsquos were included in the calibration of the test system All other
lossesassociatedwiththetestfixtureareincludedinthemeasurements
Figure 2 Typical test system setup required for measuring CMPA0060025F-TB
CMPA2560002F mounted in the test fixture
Input Bias T Output Bias T
VGG
RF In RF Out
VDD
CMPA0060025F
7 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C
40
50
60
Pow
erD
issi
patio
n(W
)
Power Dissipation derating Curve vs max Tcase
0
10
20
30
0 50 100 150 200 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit
CMPA0060025F-TB Demonstration Amplifier Circuit Outline
9 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
J1J2 CONNECTOR SMA AMP1052901-1 2
- PCBTACONICRF-35-0100-CHCH 1
Q1 CMPA0060025F 1
Notes
1 The CMPA0060025F is connected to the PCB with 20 mil Au bond wires
2 An external bias T is required
Product Dimensions CMPA0060025F (Package Type mdash 780019)
10 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Disclaimer
SpecificationsaresubjecttochangewithoutnoticeCreeIncbelievestheinformationcontainedwithinthisdatasheet
to be accurate and reliable However no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use No license is granted by implication or otherwise under
any patent or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its
products for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities
and are provided for information purposes only These values can and do vary in different applications and actual
performance can vary over time All operating parameters should be validated by customerrsquos technical experts for each
application Cree products are not designed intended or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life in applications in which the failure of the Cree product could
resultinpersonalinjuryordeathorinapplicationsfortheplanningconstructionmaintenanceordirectoperationofa
nuclear facility CREE and the CREE logo are registered trademarks of Cree Inc
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
2 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter Symbol Rating Units
Drain-source Voltage VDSS 84 VDC
Gate-source Voltage VGS -10 +2 VDC
Storage Temperature TSTG -65 +150 ˚C
Operating Junction Temperature TJ 225 ˚C
Maximum Forward Gate Current IGMAX 4 mA
Soldering Temperature1 TS 245 ˚C
Screw Torque τ 40 in-oz
Thermal Resistance Junction to Case RθJC 33 ˚CW
Case Operating Temperature23 TC -40 +150 ˚C
Note1 Refer to the Application Note on soldering at wwwcreecomproductswireless_appnotesasp2 Measured for the CMPA0060025F at PIN = 32 dBm
Electrical Characteristics (Frequency = 20 MHz to 60 GHz unless otherwise stated TC = 25˚C)
Characteristics Symbol Min Typ Max Units Conditions
DC Characteristics
Gate Threshold Voltage2 V(GS)TH -38 -30 -23 V VDS=20V∆ID = 20 mA
Gate Quiescent Voltage V(GS)Q ndash -27 ndash VDC VDD = 50 V IDQ = 500 mA PIN = 32 dBm
Saturated Drain Current IDC ndash 12 ndash A VDS = 12 V VGS = 20 V
RF Characteristics1
Power Output at POUT 45 GHz POUT1 410 428 ndash dBm VDD = 50 V IDQ = 500 mA PIN = 32 dBm
Power Output at POUT 50 GHz POUT2 410 433 ndash dBm VDD = 50 V IDQ = 500 mA PIN = 32 dBm
Power Output at POUT 60 GHz POUT3 410 429 ndash dBm VDD = 50 V IDQ = 500 mA PIN = 32 dBm
DrainEfficiencyatPOUT 45 GHz η1 180 241 ndash VDD = 50 V IDQ = 500 mA PIN = 32 dBm
DrainEfficiencyatPOUT 50 GHz η2 180 280 ndash VDD = 50 V IDQ = 500 mA PIN = 32 dBm
DrainEfficiencyatPOUT 60 GHz η3 180 272 ndash VDD = 50 V IDQ = 500 mA PIN = 32 dBm
Output Mismatch Stress VSWR ndash ndash 5 1 YNo damage at all phase angles VDD = 50 V IDQ = 500 mA PIN = 32 dBm
Small Signal RF Characteristics
S21 S11 S22
Frequency Min Typ Max Min Typ Max Min Typ Max Conditions
002 GHz - 025 GHz 180 193 237 ndash -41 -25 ndash -85 -45 VDD = 50 V IDQ = 500 mA
025 GHz - 05 GHz 180 198 220 ndash -68 -35 ndash -89 -45 VDD = 50 V IDQ = 500 mA
05 GHz - 10 GHz 155 186 220 ndash -153 -65 ndash -67 -45 VDD = 50 V IDQ = 500 mA
10 GHz - 20 GHz 155 186 220 ndash -153 -125 ndash -67 -45 VDD = 50 V IDQ = 500 mA
20 GHz - 30 GHz 130 186 200 ndash -153 -125 ndash -60 -25 VDD = 50 V IDQ = 500 mA
30 GHz - 60 GHz 130 163 200 ndash -142 -65 ndash -53 -25 VDD = 50 V IDQ = 500 mA
Notes1 POUTisdefinedasPIN = 32 dBm2 The device will draw approximately 55-70 mA at pinch off due to the internal circuit structure
3 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Typical Performance
Small Signal Gain Input amp Output Return Losses
vs Frequency at 50 V vs Frequency at 50 V
Small Signal Gain Input amp Output Return Losses
vs Frequency at 40 V vs Frequency at 40 V
15
20
25
Gai
n(d
B)
Small Signal Gain 50V
0
5
10
00 10 20 30 40 50 60
Gai
n(d
B)
Frequency (GHz)
15
20
25
Gai
n(d
B)
Small Signal Gain 40V
0
5
10
00 10 20 30 40 50 60
Gai
n(d
B)
Frequency (GHz)
-10
-5
0
Ret
urn
Loss
(dB
)
Input amp Output Return Losses 50V
-30
-25
-20
-15
00 10 20 30 40 50 60R
etur
nLo
ss(d
B)
Frequency (GHz)
S22
S11
-10
-5
0
Ret
urn
Loss
(dB
)
Input amp Output Return Losses 40V
-30
-25
-20
-15
00 10 20 30 40 50 60
Ret
urn
Loss
(dB
)
Frequency (GHz)
S22
S11
4 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Typical Performance
Output Power at PIN = 32 dBm vs Frequency Power Gain at PIN = 32 dBm vs Frequency
as a Function of Drain Voltage as a Function of Drain Voltage
Drain Efficiency at PIN = 32 dBm vs Frequency
as a Function of Drain Voltage
46
47
48
49
50
Out
putP
ower
(dB
m)
Power at Pin 32 dBm
50V
40V
40
41
42
43
44
45
00 10 20 30 40 50 60
Out
putP
ower
(dB
m)
Frequency (GHz)
12
14
16
18
20
Gai
n(d
B)
Power Gain Pin 32 dBm
50V
40V
0
2
4
6
8
10
00 10 20 30 40 50 60G
ain
(dB
)
Frequency (GHz)
40
50
60
70
Dra
inEf
ficie
ncy
()
Drain Efficiency vs Freqeuncy Pin 32 dBm
50V
40V
0
10
20
30
00 10 20 30 40 50 60
Dra
inEf
ficie
ncy
()
Frequency (GHz)
5 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Typical Performance
Gain vs Input Power at 50V Efficiency vs Input Power at 50 V
as a Function of Frequency as a Function of Frequency
Gain vs Input Power at 40V Efficiency vs Input Power at 40 V
as a Function of Frequency as a Function of Frequency
15
20
25
Gai
n(d
B)
Gain vs Input power 50 V
0
5
10
10 15 20 25 30 35
Gai
n(d
B)
Input Power (dBm)
20 MHz10 GHz20 GHz40 GHz60 GHz
15
20
25
Gai
n(d
B)
Gain vs Input Power
0
5
10
10 15 20 25 30 35
Gai
n(d
B)
Input Power (dBm)
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
40
50
60
70
Effic
ienc
y(
)
EFF vs Input power 50 V
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
0
10
20
30
10 15 20 25 30 35Ef
ficie
ncy
()
Input Power (dBm)
40
50
60
70
Effic
ienc
y(
)
EFF vs Input power 40 V
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
0
10
20
30
10 15 20 25 30 35
Effic
ienc
y(
)
Input Power (dBm)
6 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
General Device Information
TheCMPA0060025FisaGaNHEMTMMICPowerAmplifierwhichoperatesbetween20MHz-60GHzThe
amplifiertypicallyprovides17dBofsmallsignalgainand25Wsaturatedoutputpowerwithanassociatedpower
addedefficiencyofbetterthan20Thewidebandamplifierrsquosinputandoutputareinternallymatchedto50Ohm
TheamplifierrequiresbiasfromappropriateBias-TrsquosthroughtheRFinputandoutputports
TheCMPA0060025FisprovidedinaflangepackageformatTheinputandoutputconnectionsaregoldplated
to enable gold bond wire attach at the next level assembly
Themeasurementsinthisdatasheetweretakenondeviceswire-bondedtothetestfixturewith2milgold
bond wires The CMPA0060025F-TB and the device were then measured using external Bias-Trsquos (TECDIA TBT-
H06M20 or similar) as shown in Figure 2 The Bias-Trsquos were included in the calibration of the test system All other
lossesassociatedwiththetestfixtureareincludedinthemeasurements
Figure 2 Typical test system setup required for measuring CMPA0060025F-TB
CMPA2560002F mounted in the test fixture
Input Bias T Output Bias T
VGG
RF In RF Out
VDD
CMPA0060025F
7 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C
40
50
60
Pow
erD
issi
patio
n(W
)
Power Dissipation derating Curve vs max Tcase
0
10
20
30
0 50 100 150 200 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit
CMPA0060025F-TB Demonstration Amplifier Circuit Outline
9 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
J1J2 CONNECTOR SMA AMP1052901-1 2
- PCBTACONICRF-35-0100-CHCH 1
Q1 CMPA0060025F 1
Notes
1 The CMPA0060025F is connected to the PCB with 20 mil Au bond wires
2 An external bias T is required
Product Dimensions CMPA0060025F (Package Type mdash 780019)
10 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Disclaimer
SpecificationsaresubjecttochangewithoutnoticeCreeIncbelievestheinformationcontainedwithinthisdatasheet
to be accurate and reliable However no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use No license is granted by implication or otherwise under
any patent or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its
products for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities
and are provided for information purposes only These values can and do vary in different applications and actual
performance can vary over time All operating parameters should be validated by customerrsquos technical experts for each
application Cree products are not designed intended or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life in applications in which the failure of the Cree product could
resultinpersonalinjuryordeathorinapplicationsfortheplanningconstructionmaintenanceordirectoperationofa
nuclear facility CREE and the CREE logo are registered trademarks of Cree Inc
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
3 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Typical Performance
Small Signal Gain Input amp Output Return Losses
vs Frequency at 50 V vs Frequency at 50 V
Small Signal Gain Input amp Output Return Losses
vs Frequency at 40 V vs Frequency at 40 V
15
20
25
Gai
n(d
B)
Small Signal Gain 50V
0
5
10
00 10 20 30 40 50 60
Gai
n(d
B)
Frequency (GHz)
15
20
25
Gai
n(d
B)
Small Signal Gain 40V
0
5
10
00 10 20 30 40 50 60
Gai
n(d
B)
Frequency (GHz)
-10
-5
0
Ret
urn
Loss
(dB
)
Input amp Output Return Losses 50V
-30
-25
-20
-15
00 10 20 30 40 50 60R
etur
nLo
ss(d
B)
Frequency (GHz)
S22
S11
-10
-5
0
Ret
urn
Loss
(dB
)
Input amp Output Return Losses 40V
-30
-25
-20
-15
00 10 20 30 40 50 60
Ret
urn
Loss
(dB
)
Frequency (GHz)
S22
S11
4 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Typical Performance
Output Power at PIN = 32 dBm vs Frequency Power Gain at PIN = 32 dBm vs Frequency
as a Function of Drain Voltage as a Function of Drain Voltage
Drain Efficiency at PIN = 32 dBm vs Frequency
as a Function of Drain Voltage
46
47
48
49
50
Out
putP
ower
(dB
m)
Power at Pin 32 dBm
50V
40V
40
41
42
43
44
45
00 10 20 30 40 50 60
Out
putP
ower
(dB
m)
Frequency (GHz)
12
14
16
18
20
Gai
n(d
B)
Power Gain Pin 32 dBm
50V
40V
0
2
4
6
8
10
00 10 20 30 40 50 60G
ain
(dB
)
Frequency (GHz)
40
50
60
70
Dra
inEf
ficie
ncy
()
Drain Efficiency vs Freqeuncy Pin 32 dBm
50V
40V
0
10
20
30
00 10 20 30 40 50 60
Dra
inEf
ficie
ncy
()
Frequency (GHz)
5 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Typical Performance
Gain vs Input Power at 50V Efficiency vs Input Power at 50 V
as a Function of Frequency as a Function of Frequency
Gain vs Input Power at 40V Efficiency vs Input Power at 40 V
as a Function of Frequency as a Function of Frequency
15
20
25
Gai
n(d
B)
Gain vs Input power 50 V
0
5
10
10 15 20 25 30 35
Gai
n(d
B)
Input Power (dBm)
20 MHz10 GHz20 GHz40 GHz60 GHz
15
20
25
Gai
n(d
B)
Gain vs Input Power
0
5
10
10 15 20 25 30 35
Gai
n(d
B)
Input Power (dBm)
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
40
50
60
70
Effic
ienc
y(
)
EFF vs Input power 50 V
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
0
10
20
30
10 15 20 25 30 35Ef
ficie
ncy
()
Input Power (dBm)
40
50
60
70
Effic
ienc
y(
)
EFF vs Input power 40 V
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
0
10
20
30
10 15 20 25 30 35
Effic
ienc
y(
)
Input Power (dBm)
6 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
General Device Information
TheCMPA0060025FisaGaNHEMTMMICPowerAmplifierwhichoperatesbetween20MHz-60GHzThe
amplifiertypicallyprovides17dBofsmallsignalgainand25Wsaturatedoutputpowerwithanassociatedpower
addedefficiencyofbetterthan20Thewidebandamplifierrsquosinputandoutputareinternallymatchedto50Ohm
TheamplifierrequiresbiasfromappropriateBias-TrsquosthroughtheRFinputandoutputports
TheCMPA0060025FisprovidedinaflangepackageformatTheinputandoutputconnectionsaregoldplated
to enable gold bond wire attach at the next level assembly
Themeasurementsinthisdatasheetweretakenondeviceswire-bondedtothetestfixturewith2milgold
bond wires The CMPA0060025F-TB and the device were then measured using external Bias-Trsquos (TECDIA TBT-
H06M20 or similar) as shown in Figure 2 The Bias-Trsquos were included in the calibration of the test system All other
lossesassociatedwiththetestfixtureareincludedinthemeasurements
Figure 2 Typical test system setup required for measuring CMPA0060025F-TB
CMPA2560002F mounted in the test fixture
Input Bias T Output Bias T
VGG
RF In RF Out
VDD
CMPA0060025F
7 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C
40
50
60
Pow
erD
issi
patio
n(W
)
Power Dissipation derating Curve vs max Tcase
0
10
20
30
0 50 100 150 200 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit
CMPA0060025F-TB Demonstration Amplifier Circuit Outline
9 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
J1J2 CONNECTOR SMA AMP1052901-1 2
- PCBTACONICRF-35-0100-CHCH 1
Q1 CMPA0060025F 1
Notes
1 The CMPA0060025F is connected to the PCB with 20 mil Au bond wires
2 An external bias T is required
Product Dimensions CMPA0060025F (Package Type mdash 780019)
10 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Disclaimer
SpecificationsaresubjecttochangewithoutnoticeCreeIncbelievestheinformationcontainedwithinthisdatasheet
to be accurate and reliable However no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use No license is granted by implication or otherwise under
any patent or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its
products for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities
and are provided for information purposes only These values can and do vary in different applications and actual
performance can vary over time All operating parameters should be validated by customerrsquos technical experts for each
application Cree products are not designed intended or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life in applications in which the failure of the Cree product could
resultinpersonalinjuryordeathorinapplicationsfortheplanningconstructionmaintenanceordirectoperationofa
nuclear facility CREE and the CREE logo are registered trademarks of Cree Inc
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
4 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Typical Performance
Output Power at PIN = 32 dBm vs Frequency Power Gain at PIN = 32 dBm vs Frequency
as a Function of Drain Voltage as a Function of Drain Voltage
Drain Efficiency at PIN = 32 dBm vs Frequency
as a Function of Drain Voltage
46
47
48
49
50
Out
putP
ower
(dB
m)
Power at Pin 32 dBm
50V
40V
40
41
42
43
44
45
00 10 20 30 40 50 60
Out
putP
ower
(dB
m)
Frequency (GHz)
12
14
16
18
20
Gai
n(d
B)
Power Gain Pin 32 dBm
50V
40V
0
2
4
6
8
10
00 10 20 30 40 50 60G
ain
(dB
)
Frequency (GHz)
40
50
60
70
Dra
inEf
ficie
ncy
()
Drain Efficiency vs Freqeuncy Pin 32 dBm
50V
40V
0
10
20
30
00 10 20 30 40 50 60
Dra
inEf
ficie
ncy
()
Frequency (GHz)
5 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Typical Performance
Gain vs Input Power at 50V Efficiency vs Input Power at 50 V
as a Function of Frequency as a Function of Frequency
Gain vs Input Power at 40V Efficiency vs Input Power at 40 V
as a Function of Frequency as a Function of Frequency
15
20
25
Gai
n(d
B)
Gain vs Input power 50 V
0
5
10
10 15 20 25 30 35
Gai
n(d
B)
Input Power (dBm)
20 MHz10 GHz20 GHz40 GHz60 GHz
15
20
25
Gai
n(d
B)
Gain vs Input Power
0
5
10
10 15 20 25 30 35
Gai
n(d
B)
Input Power (dBm)
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
40
50
60
70
Effic
ienc
y(
)
EFF vs Input power 50 V
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
0
10
20
30
10 15 20 25 30 35Ef
ficie
ncy
()
Input Power (dBm)
40
50
60
70
Effic
ienc
y(
)
EFF vs Input power 40 V
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
0
10
20
30
10 15 20 25 30 35
Effic
ienc
y(
)
Input Power (dBm)
6 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
General Device Information
TheCMPA0060025FisaGaNHEMTMMICPowerAmplifierwhichoperatesbetween20MHz-60GHzThe
amplifiertypicallyprovides17dBofsmallsignalgainand25Wsaturatedoutputpowerwithanassociatedpower
addedefficiencyofbetterthan20Thewidebandamplifierrsquosinputandoutputareinternallymatchedto50Ohm
TheamplifierrequiresbiasfromappropriateBias-TrsquosthroughtheRFinputandoutputports
TheCMPA0060025FisprovidedinaflangepackageformatTheinputandoutputconnectionsaregoldplated
to enable gold bond wire attach at the next level assembly
Themeasurementsinthisdatasheetweretakenondeviceswire-bondedtothetestfixturewith2milgold
bond wires The CMPA0060025F-TB and the device were then measured using external Bias-Trsquos (TECDIA TBT-
H06M20 or similar) as shown in Figure 2 The Bias-Trsquos were included in the calibration of the test system All other
lossesassociatedwiththetestfixtureareincludedinthemeasurements
Figure 2 Typical test system setup required for measuring CMPA0060025F-TB
CMPA2560002F mounted in the test fixture
Input Bias T Output Bias T
VGG
RF In RF Out
VDD
CMPA0060025F
7 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C
40
50
60
Pow
erD
issi
patio
n(W
)
Power Dissipation derating Curve vs max Tcase
0
10
20
30
0 50 100 150 200 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit
CMPA0060025F-TB Demonstration Amplifier Circuit Outline
9 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
J1J2 CONNECTOR SMA AMP1052901-1 2
- PCBTACONICRF-35-0100-CHCH 1
Q1 CMPA0060025F 1
Notes
1 The CMPA0060025F is connected to the PCB with 20 mil Au bond wires
2 An external bias T is required
Product Dimensions CMPA0060025F (Package Type mdash 780019)
10 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Disclaimer
SpecificationsaresubjecttochangewithoutnoticeCreeIncbelievestheinformationcontainedwithinthisdatasheet
to be accurate and reliable However no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use No license is granted by implication or otherwise under
any patent or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its
products for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities
and are provided for information purposes only These values can and do vary in different applications and actual
performance can vary over time All operating parameters should be validated by customerrsquos technical experts for each
application Cree products are not designed intended or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life in applications in which the failure of the Cree product could
resultinpersonalinjuryordeathorinapplicationsfortheplanningconstructionmaintenanceordirectoperationofa
nuclear facility CREE and the CREE logo are registered trademarks of Cree Inc
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
5 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Typical Performance
Gain vs Input Power at 50V Efficiency vs Input Power at 50 V
as a Function of Frequency as a Function of Frequency
Gain vs Input Power at 40V Efficiency vs Input Power at 40 V
as a Function of Frequency as a Function of Frequency
15
20
25
Gai
n(d
B)
Gain vs Input power 50 V
0
5
10
10 15 20 25 30 35
Gai
n(d
B)
Input Power (dBm)
20 MHz10 GHz20 GHz40 GHz60 GHz
15
20
25
Gai
n(d
B)
Gain vs Input Power
0
5
10
10 15 20 25 30 35
Gai
n(d
B)
Input Power (dBm)
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
40
50
60
70
Effic
ienc
y(
)
EFF vs Input power 50 V
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
0
10
20
30
10 15 20 25 30 35Ef
ficie
ncy
()
Input Power (dBm)
40
50
60
70
Effic
ienc
y(
)
EFF vs Input power 40 V
20 MHz
10 GHz
20 GHz
40 GHz
60 GHz
0
10
20
30
10 15 20 25 30 35
Effic
ienc
y(
)
Input Power (dBm)
6 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
General Device Information
TheCMPA0060025FisaGaNHEMTMMICPowerAmplifierwhichoperatesbetween20MHz-60GHzThe
amplifiertypicallyprovides17dBofsmallsignalgainand25Wsaturatedoutputpowerwithanassociatedpower
addedefficiencyofbetterthan20Thewidebandamplifierrsquosinputandoutputareinternallymatchedto50Ohm
TheamplifierrequiresbiasfromappropriateBias-TrsquosthroughtheRFinputandoutputports
TheCMPA0060025FisprovidedinaflangepackageformatTheinputandoutputconnectionsaregoldplated
to enable gold bond wire attach at the next level assembly
Themeasurementsinthisdatasheetweretakenondeviceswire-bondedtothetestfixturewith2milgold
bond wires The CMPA0060025F-TB and the device were then measured using external Bias-Trsquos (TECDIA TBT-
H06M20 or similar) as shown in Figure 2 The Bias-Trsquos were included in the calibration of the test system All other
lossesassociatedwiththetestfixtureareincludedinthemeasurements
Figure 2 Typical test system setup required for measuring CMPA0060025F-TB
CMPA2560002F mounted in the test fixture
Input Bias T Output Bias T
VGG
RF In RF Out
VDD
CMPA0060025F
7 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C
40
50
60
Pow
erD
issi
patio
n(W
)
Power Dissipation derating Curve vs max Tcase
0
10
20
30
0 50 100 150 200 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit
CMPA0060025F-TB Demonstration Amplifier Circuit Outline
9 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
J1J2 CONNECTOR SMA AMP1052901-1 2
- PCBTACONICRF-35-0100-CHCH 1
Q1 CMPA0060025F 1
Notes
1 The CMPA0060025F is connected to the PCB with 20 mil Au bond wires
2 An external bias T is required
Product Dimensions CMPA0060025F (Package Type mdash 780019)
10 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Disclaimer
SpecificationsaresubjecttochangewithoutnoticeCreeIncbelievestheinformationcontainedwithinthisdatasheet
to be accurate and reliable However no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use No license is granted by implication or otherwise under
any patent or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its
products for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities
and are provided for information purposes only These values can and do vary in different applications and actual
performance can vary over time All operating parameters should be validated by customerrsquos technical experts for each
application Cree products are not designed intended or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life in applications in which the failure of the Cree product could
resultinpersonalinjuryordeathorinapplicationsfortheplanningconstructionmaintenanceordirectoperationofa
nuclear facility CREE and the CREE logo are registered trademarks of Cree Inc
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
6 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
General Device Information
TheCMPA0060025FisaGaNHEMTMMICPowerAmplifierwhichoperatesbetween20MHz-60GHzThe
amplifiertypicallyprovides17dBofsmallsignalgainand25Wsaturatedoutputpowerwithanassociatedpower
addedefficiencyofbetterthan20Thewidebandamplifierrsquosinputandoutputareinternallymatchedto50Ohm
TheamplifierrequiresbiasfromappropriateBias-TrsquosthroughtheRFinputandoutputports
TheCMPA0060025FisprovidedinaflangepackageformatTheinputandoutputconnectionsaregoldplated
to enable gold bond wire attach at the next level assembly
Themeasurementsinthisdatasheetweretakenondeviceswire-bondedtothetestfixturewith2milgold
bond wires The CMPA0060025F-TB and the device were then measured using external Bias-Trsquos (TECDIA TBT-
H06M20 or similar) as shown in Figure 2 The Bias-Trsquos were included in the calibration of the test system All other
lossesassociatedwiththetestfixtureareincludedinthemeasurements
Figure 2 Typical test system setup required for measuring CMPA0060025F-TB
CMPA2560002F mounted in the test fixture
Input Bias T Output Bias T
VGG
RF In RF Out
VDD
CMPA0060025F
7 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C
40
50
60
Pow
erD
issi
patio
n(W
)
Power Dissipation derating Curve vs max Tcase
0
10
20
30
0 50 100 150 200 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit
CMPA0060025F-TB Demonstration Amplifier Circuit Outline
9 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
J1J2 CONNECTOR SMA AMP1052901-1 2
- PCBTACONICRF-35-0100-CHCH 1
Q1 CMPA0060025F 1
Notes
1 The CMPA0060025F is connected to the PCB with 20 mil Au bond wires
2 An external bias T is required
Product Dimensions CMPA0060025F (Package Type mdash 780019)
10 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Disclaimer
SpecificationsaresubjecttochangewithoutnoticeCreeIncbelievestheinformationcontainedwithinthisdatasheet
to be accurate and reliable However no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use No license is granted by implication or otherwise under
any patent or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its
products for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities
and are provided for information purposes only These values can and do vary in different applications and actual
performance can vary over time All operating parameters should be validated by customerrsquos technical experts for each
application Cree products are not designed intended or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life in applications in which the failure of the Cree product could
resultinpersonalinjuryordeathorinapplicationsfortheplanningconstructionmaintenanceordirectoperationofa
nuclear facility CREE and the CREE logo are registered trademarks of Cree Inc
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
7 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C
40
50
60
Pow
erD
issi
patio
n(W
)
Power Dissipation derating Curve vs max Tcase
0
10
20
30
0 50 100 150 200 250
Pow
erD
issi
patio
n(W
)
Maximum Case Temperature (degC)
Note 1
8 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit
CMPA0060025F-TB Demonstration Amplifier Circuit Outline
9 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
J1J2 CONNECTOR SMA AMP1052901-1 2
- PCBTACONICRF-35-0100-CHCH 1
Q1 CMPA0060025F 1
Notes
1 The CMPA0060025F is connected to the PCB with 20 mil Au bond wires
2 An external bias T is required
Product Dimensions CMPA0060025F (Package Type mdash 780019)
10 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Disclaimer
SpecificationsaresubjecttochangewithoutnoticeCreeIncbelievestheinformationcontainedwithinthisdatasheet
to be accurate and reliable However no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use No license is granted by implication or otherwise under
any patent or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its
products for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities
and are provided for information purposes only These values can and do vary in different applications and actual
performance can vary over time All operating parameters should be validated by customerrsquos technical experts for each
application Cree products are not designed intended or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life in applications in which the failure of the Cree product could
resultinpersonalinjuryordeathorinapplicationsfortheplanningconstructionmaintenanceordirectoperationofa
nuclear facility CREE and the CREE logo are registered trademarks of Cree Inc
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
8 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit
CMPA0060025F-TB Demonstration Amplifier Circuit Outline
9 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
J1J2 CONNECTOR SMA AMP1052901-1 2
- PCBTACONICRF-35-0100-CHCH 1
Q1 CMPA0060025F 1
Notes
1 The CMPA0060025F is connected to the PCB with 20 mil Au bond wires
2 An external bias T is required
Product Dimensions CMPA0060025F (Package Type mdash 780019)
10 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Disclaimer
SpecificationsaresubjecttochangewithoutnoticeCreeIncbelievestheinformationcontainedwithinthisdatasheet
to be accurate and reliable However no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use No license is granted by implication or otherwise under
any patent or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its
products for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities
and are provided for information purposes only These values can and do vary in different applications and actual
performance can vary over time All operating parameters should be validated by customerrsquos technical experts for each
application Cree products are not designed intended or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life in applications in which the failure of the Cree product could
resultinpersonalinjuryordeathorinapplicationsfortheplanningconstructionmaintenanceordirectoperationofa
nuclear facility CREE and the CREE logo are registered trademarks of Cree Inc
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
9 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
CMPA0060025F-TB Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
J1J2 CONNECTOR SMA AMP1052901-1 2
- PCBTACONICRF-35-0100-CHCH 1
Q1 CMPA0060025F 1
Notes
1 The CMPA0060025F is connected to the PCB with 20 mil Au bond wires
2 An external bias T is required
Product Dimensions CMPA0060025F (Package Type mdash 780019)
10 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Disclaimer
SpecificationsaresubjecttochangewithoutnoticeCreeIncbelievestheinformationcontainedwithinthisdatasheet
to be accurate and reliable However no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use No license is granted by implication or otherwise under
any patent or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its
products for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities
and are provided for information purposes only These values can and do vary in different applications and actual
performance can vary over time All operating parameters should be validated by customerrsquos technical experts for each
application Cree products are not designed intended or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life in applications in which the failure of the Cree product could
resultinpersonalinjuryordeathorinapplicationsfortheplanningconstructionmaintenanceordirectoperationofa
nuclear facility CREE and the CREE logo are registered trademarks of Cree Inc
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
10 CMPA0060025F Rev 31
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomwireless
Copyright copy 2009-2012 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association
Disclaimer
SpecificationsaresubjecttochangewithoutnoticeCreeIncbelievestheinformationcontainedwithinthisdatasheet
to be accurate and reliable However no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use No license is granted by implication or otherwise under
any patent or patent rights of Cree Cree makes no warranty representation or guarantee regarding the suitability of its
products for any particular purpose ldquoTypicalrdquo parameters are the average values expected by Cree in large quantities
and are provided for information purposes only These values can and do vary in different applications and actual
performance can vary over time All operating parameters should be validated by customerrsquos technical experts for each
application Cree products are not designed intended or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life in applications in which the failure of the Cree product could
resultinpersonalinjuryordeathorinapplicationsfortheplanningconstructionmaintenanceordirectoperationofa
nuclear facility CREE and the CREE logo are registered trademarks of Cree Inc
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless
Sarah MillerMarketing amp ExportCree RF Components19194075302
Ryan BakerMarketingCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
![PVCPR11 Edital 3.5 GHz v03.ppt [Modo de Compatibilidade]...2011/06/09 · 35 MHz 35 MHz 10 MHz 10 MHz 10 MHz 10 MHz 10 MHz 10 MHz 3.400,00 MHz 3.600,00 MHz 10 MHz 35 MHz 10 MHz 10](https://static.fdocuments.net/doc/165x107/5f7286506e7f433bb4685297/pvcpr11-edital-35-ghz-v03ppt-modo-de-compatibilidade-20110609-35-mhz.jpg)
