20130723 research accomplishment_ud

Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University

Taejong Baek

Department of Electronics and Electrical Engineering Graduate School

Dongguk University

Semiconductor amp Integrated Circuit LabMillimeter-wave INovation Technology research center

Research accomplishment (2003 ~ )

Semiconductor amp Integrated Circuit Lab Millimeter-wave INnovation Technology research center Dongguk University1

Research field


What is Millimeter-wave

30 300 3000

Micro-wave Millimeter-wave Submillimeter-wave

10 1 01

Frequency (GHz)

Wave-length (mm)

Wide bandwidth high data rate and high speedwireless communication applications

Short wavelength small-sized and light-weighted circuit systems


1 Large spectrum availability

rArr Broadband system

rArr Unused frequency bands

2 High reuse potential of frequency

rArr Short range communications from a few meters up to few kilometers

3 Small antenna and system size

rArr Very short wavelength

Advantages of Millimeter-wave


Requirement of Millimeter-wave Monolithic integrated Circuits

Millimeter-waveApplications

ITS

Military

WLANImaging

system

Imaging

system

Medical

Examples of Millimeter-wave applications

4


Mask Aligner ICP-Dry etcher

FC Bonder

E-Beam Lithography

Thermal Evaporator ULVAC EBV-10

Rapid Thermal Process System (RTP) KVR-020

Plasma Enhanced Chemical Vapor Deposition (PECVD) JCSS-41MR

O2 Plasma Asher Oxford plasma lab 80 plus

Mask Aligner Karl Suss MA6

Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) KVICP-T4083

E-Beam Evaporator System KVE-T5560

E-Beam Lithography System Leica EBPG-4HR

Au Plating System

Vacuum Dry Oven SB-CD520

Lapping Machine Allied MultiPrep TM System

Furnace Metritherm

Surface Profiler a-step 200

Thin Film Analyzer Tyger

Flip Chip Bonder Laurier M9

Wedge bonder Hybond 572-A

Ball bonder Hybond 626

Spectrum amp Vector Network Analyzer

Semiconductor Characterization System Keithley 4200-PCS

Ansys HFSS amp Agilent ADS Simulation Program

Plasma Asher

Furnace


GaAs-based 70 nm MHEMTs


Fabricated MHEMT


lt70 microm times 2 MHEMTgt ltResist profile of gate footgt

70 nm


70 nm Gate Metamorphic HEMT

Si3N4 passivation 800 Å

Gate length 70 nm

Double exposure method

Tri-layer resist stack

ZEP520 DCB = 15 1

PMGI

PMMA950K MCB = 1 1Gate metal formation

TiAu = 5004500 ÅSEM view of fabricated 70 nm gate

Development of MMIC Libraries


DC performance- Drain current density 607 mAmm

- Transconductance (gm) 1015 Smm

lt I-V characteristics gt lt Transconductance characteristics gt

70 nm times140 microm MHEMT (1)




lt RF characteristics gt

330 GHz

425 GHz


- fT 330 GHz

- fmax 425 GHz

RF performance


fT comparison of HEMTs

[1][2]

[3]

[4]

[5]

[6] [7]

[8] [9]

[10]

This work

[1] Y Yamashita et al IEEE Electron Device Letters

vol 23 no 10 pp 573-575 2002[2] K Shinohara et al IEEE Electron Device Letters

vol 25 no 5 pp 241-243 2004[3] T Suemitsu et al IEEE Trans on Electron Devices


vol 22 no 11 pp 507-509 2001[5] K Shinohara et al IEEE MTT-S Digest

vol 3 pp 2159-2162 2001[6] S Bollaert et al IEE Electronics Letters

vol 38 no 8 pp 389-391 2002[7] T Parenty et al Indium Phosphide and

Related Materials pp 626-629 2001[8] A Leuther et al Indium Phosphide and

Related Materials pp 215-218 2003[9] H Wang et al IEEE IEDM Digest

pp 239-242 1993[10] Y C Lien et al IEEE Electron Device Letters

vol 25 no 6 pp 348-350 2004


This work Sung Chan Kim et al IEEE Electron Device Letters vol 27 no 1 pp 28-30 2006


DAML(Dielectric-supported Air-gapped Microstrip Line)


Transmission line

Basic elements

Major cause of device loss

Motivation of DAML (1)

SubstrateSubstrate

Conventional transmission lines

Substrate loss

Demand of MEMS technology

Motivation of DAML

Microstrip line CPW line


Substrate 1

Substrate 2

Substrate

(1)

(2)

(3)

Shielded Membrane Microstrip

(1) Shield cover 2 Masks

(2) Membrane plane 3 Masks

(3) Ground plane 1 Masks


Complex processes

Difficulty of integration withMMICMIMIC


DAML technology

Reference SV Robertson et al IEEE Trans Microwave Theory and Techvol 46 no 11 1998 pp 1845-1849 1998

Motivation of DAML


Surface micromachined transmission line Reduced substrate loss due to elevated signal line

Simple process Compatibility with standard MMICMIMIC fabrication Photo-lithography and low-temperature process

Easily integrated with MMICMIMIC (3 additional masks required) Dielectric post used for mechanical stability (1 post1 mm)

Possibility of vertical integration (3-D integration)

SI GaAs substrate

Dielectric post

Signal line

Ground

DAML Dielectric-supported Air-gapped Microstrip Line

DAML


w

d

h

g

3h ⅹ2 + w

Formula for Effective Dielectric Constant in Partial Dielectric Layer

h Dielectric post height (microm) w Signal line width (microm)

g Dielectric post gap (microm)

d Dielectric post size (microm)

3hⅹ2 + w Field area (by Ansoft HFSS)

The effective dielectric constant εeff is 1086 by calculation (Where g = 500 microm h = 10 microm w = 44 microm d = 40 microm)

wh

whgd

whgd

polyimidepolyimide

eff

121

12

1)23(

1

2

1)23(

12

2

DAML

)23(1

2

whgd

polyimider

Dielectric constant of DAML-Substrate is 1108 by calculation


Process flow of the DAML

Semi-insulating GaAs substrate




Sacrificial layer (AZ4903)patterning

Seed metal (TiAu)evaporation and

Electro-molding (AZ4903)formation

Signal line (Au) formationand sacrificial layer removal

Ground metal (TiAu) anddielectric post (polyimide)

formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML

Reflow the photoresist for smooth metal overlay


Fabricated DAML

Fabricated DAML


Comparison of transmission lines[1] K Nishikawa et al IEEE MTT-S Digest vol 3

2001 pp 1881-1884

[2] GE Ponchak et al IEEE Trans Components Packaging and Manufacturing Technology-B

vol 21 no 2 pp 171-176 1998

[3] Suidong Yang et al IEEE Trans MicrowaveTheory and Techniques

vol 46 no 5 pp 623-631 1998

[4] YC Shih et al Microwave Journal

pp 95-105 1991

[5] Youngwoo Kwon et al IEEE Microwave

and Wireless Components Letters

vol 11 no 2 pp 59-61 2001[6] SV Robertson et al IEEE Trans Microwave

Theory and Techniques

vol 46 no 11 1998 pp 1845-1849 1998

This work Sung-Chan Kim et al IEEE Microwaveand Wireless Components Lettersvol 15 no 10 pp 652-654 2005

This work H S Lee et al IEE Electronics Letters

vol 39 no 25 pp 1827-1828 2003

DAML Characteristic


Shielded DAML using Flip chip technique

h Dielectric post height w Signal line width

g Dielectric post gap

d Dielectric post size

Lower Ground Plane

Upper Ground Plane

Polyimide Dielectric post

Air-bridged Signal line

Connected Ground using Flip chip Stud

Ultra low loss extended height (10 microm rarr 17 microm) Shielding effect

- Radiation electromagnetic and environmental interference are avoided by enclosing microstrip circuitry in a shielding cavity

Simple process not bulk micromachining (using flip-chip technique)

SDAML


Fabricated DAML (height = 17 microm)

Fabricated DAML


Simulation Measurement

80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213

Signal line width 44 microm (dBcm)

DAML Characteristic (Measurement)

Insertion loss versus Signal line height


Comparison of original DAML

SDAML Characteristic

0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]

DAML (h = 10 m) DAML (h = 17 m) SDAML (h = 17 m)

60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz

Electrical length (λg 4 94 GHz )

CPW 304 microm

Microstrip 266 microm

DAML 792 microm

RS-DAML 478 microm

Comparison of electrical length

Passive Device using DAML Technology


Total Size 604 microm times 520 microm

Passive Device using DAML Technology W-band Reduced Size branch-line coupler


Coupling loss 361 dB

Isolation -355 dB

Transmission loss 425 dB

Return loss -369 dB

Measurement result of W-band Reduced branch-line coupler



Comparison of W-band branch line coupler

CaseCouplingloss (dB)

Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94


Reference 1 M Schlechtweg et al GaAs IC Symposium 1995 Technical Digest 1995

17th Annual IEEE 29 Oct-1 Nov 1995 Page(s)214 - 217


W-band Hybrid Ring Coupler

Fabricated W-band hybrid ring coupler

Coupler size146 mm (diameter)

10 microm

50 Ω termination


S-parameters of W-band hybrid ring coupler

Transmission loss380 plusmn 008 dB

( 85-105 GHz)

Coupling loss

357 plusmn 022 dB



Comparison of W-band hybrid ring coupler

Reference 1 Hiroyuki Matsuura et al IEEE MTT-S Digest 1996 pp 389-392

CaseTransmission

loss (dB)Coupling loss

(dB)Isolation

(dB)

Centerfrequency

(GHz)

1(CPW) About -55 About -47 About -30 94

Thiswork -372 -335 -34 94

Hybrid Ring Coupler

This work Sung-Chan Kim et al IEEE MWCL vol 15 no 10 pp 652-654 2005


Diameter 0888 mm

W-band reduced ring hybrid coupler



Reduced to 63 in area

Conventional Coupler

Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm

Comparison of coupler sizes



Coupling loss 435 dB Isolation -4823 dB

Transmission loss 444 dB Return loss below -25 dB (all port)

75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]

S21Thru S31coupling S23Isolation

Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss

Measurement result of W-band reduced ring hybrid coupler


35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)

1(CPW) About -55 About -47 About -30 About 07 94

DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36


(a) MIM coupling capacitor

(b) Stepped Impedance Perturbation

Novel W-Band Dual Mode Stepped Impedance Resonator BPF Using DAML Technology

(a) (b)

Journal of the Korean Physical Society vol 51 no 10 pp S280-S283 December 2007

Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation

Step Impedance Ratio 05

MIM Capacitor Size 75 microm2

Perturbation Length 275 microm

Measured Result of W-band BPF

- Insertion Loss 265 dB 97 GHz

- Relative Bandwidth 12


38


60-GHz CPW-fed Dielectric-Resonator-Above-Patch

Antenna for Broadband WLAN Applications Using DAML Technology

Microwave and Optical Technology Letters vol 49 Issue 8 pp 1859-1861 2005


39


Fabricated Antenna

(a) Fabricated patch using DAML

(b) 60 GHz RDRA

(c) Proposed antenna

(d) Antenna integrated by 60 GHz VCO


40


Measured Results


41


3-D W-band Single Balanced Active Mixer


Mixer with DAML coupler

Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout

Ring coupler based on DAML

70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post

Single Balanced Active Mixer


For the lowest reflection of DAML Distance of Airbridge to DAML 90 ~ 150 microm

Interference of DAML and CPW lines


DAML


Process flow of the single balanced mixer

GaAs epi-wafer




MHEMT


Mesa etching




MHEMT

Ohmic contact formation



ResistorMHEMT


Resistor formation



MHEMT Resistor


70 nm gate patterning narrow recess and gate metalization



MHEMT Resistor Capacitor CPW GroundGround


First metal formation





Dielectric (Si3N4) deposition





Dielectric (Si3N4) RIE





Second metal (air-bridge) formation





Dielectric (polyimide) post formation




Hybrid ring coupler based on DAML


DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm

External balun for IFrsquos

W-band coupler size

146 mm (diameter)

Fabricated single balanced mixer



Conversion loss vs LO input power

Conversion loss25 dB

- RF frequency 94 GHz

- LO frequency 942 GHz

- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz



Comparison of W-band mixers (1)

CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)

1 SE active mixer 08 01 microm InP HEMT 94 945 -

2 SB resistive mixer -8 01 microm InP HEMT 83 94 -27

3 SB resistive mixer -128 01 microm GaAs PHEMT 93 932 -

4 SB diode mixer -75 01 microm GaAs PHEMT 93 94 -18

5 SB diode mixer -9 01 microm GaAs PHEMT 94 95 -

6 SB diode mixer -10 01 microm InP HEMT 94 945 -

Thiswork SB active mixer -25 70 nm GaAs MHEMT 942 94 -33

( SE Single Ended SB Single Balanced )




- References

[1] Robinder S Virk et al IEEE MTT-S Digest 1997 pp 435-438

[2] A R Barnes et al IEEE MTT-S Digest 2002 pp 1867-1870

[3] K W Chang et al IEEE Microwave and Guided Wave Letters vol 4 no 9 pp 301-302 1994

[4] K W Chang et al IEEE Transactions on Microwave Theory and Techniques vol 39 no 12 pp 1972-1979 1991

[5] K W Chang et al Proc IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium 1993 pp 41-44


Single balanced active mixer

Low conversion loss high-performance 70 nm MHEMTs

High isolation hybrid ring coupler based on DAML




Taejong Baek


Dongguk University

A transceiver module for FM-CW radar sensors using 94 GHz dot-type Schottky diode mixer


Introduction


IntroductionMotivation


IntroductionPassive amp Active

Active system conceptAlso known as a radar (using oscillator)

Transmit a signal and receive scattered waveform

Detected unwanted objects

Need to large computational resources

Passive system conceptHigh Sensitivity receivers are required

Antenna aperture affects resolution and SNR

Direct measure of temperature (sub K accuracy)

Can detect objects through differences in emissivity

ObjectTransmitted

ReceivedFreq

T

ObjectThermal noiseVol

T

Objects also reflect the radiation emanating from the environment to a degree of reflectivity which is the complementof their emissivity the sum of the emissivity and the reflectivity is 1

Emissivity = radiation + reflectivity (from the natural background radiation)

Emissivity = radiation + reflectivity (from the signal source)


InP Gunn Diode


Epi structure of InP Gunn diode

InP Gunn diodeEpi structure

67


1 Wafer Cleaning

2 Formation of top side trench

InP Gunn diodeProcess flow 1~2

1) Initial cleaning

TCE

Acetone

IPA

DI water rinse

1)Photo resist (PR) coating

2)Soft baking

3)Alignment amp Exposure

4)Development

5)Post baking

6)Wet etching

7)PR strip

68


3 Cathode ohmic metalization

4 Integral heat sink (IHS) patterning lithography


1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning

2) Photo resist (PR) coating

3) Soft baking

4) Alignment amp Exposure

5) Post Expose Baking

6) Development

69


5 2nd seed evaporation

6 2nd plating (formation of support layer)


1)Cleaning

2)2nd seed evaporation

1) Au plating

70


7 Wafer thinning (lapping amp polishing)

8 Anode ohmic metalization


1) Wafer mount

2) Lapping 640 um lapping

3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71


9 Overlay metallization

10 MESA etching


1)Seed evaporation


3) Soft baking

4) Alignment amp Pre-exposure

5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking


5)PEB (post exposure bake)

6)Development

7)Hard baking

8)Dry etching

9)PR strip

72


11 Gold amp 2nd seed etching

(Cathode)

InP

anode

Fabricated InP Gunn diode

InP Gunn diodeProcess flow 11

1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element

InP Gunn diodePackaging

75


Ceramic ring1 Ceramic ring junction

Stud

(3-48 UNC-2A THREAD)

2 Die attachChip

InP Gunn diodePackage process 1~2

76


3 Maltese Cross BondingMaltese Cross

4 Lid junctionLid


77


X-ray image of InP Gunn diode Packaged InP Gunn diode

InP Gunn diodePackaged Diode

78


DC I-V measurement result

InP Gunn diode chip Packaged InP Gunn diode

InP Gunn diodeDC characteristic

79


Measurement results of packaged InP Gunn diode

Chip number Voltage [V] Current [mA] Oscillation frequency [GHz] Output Power [dBm]

1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164

Oscillation characteristics of fabricated InP Gunn diode

InP Gunn diodeRF characteristic

80


Transceiver








Flip chip packaging configuration

Cross section Top view

Active Radar SensorFlip-chip



(a) Gold bumps were then flattened using a flip-chip bonder of model M9 from LaurierTM at a press force of 100 gbump(b) epoxy can spread out evenly on them Flattened bump had a typical diameter of 100 μm and a height of 45 μm

(a) (b)

(c) (d)

(c) Silver epoxy was then applied onto the flattened gold bumps using a capillary tool with a 3-mil Au ribbon wire and a manual wire bonder of model 572A-40 from HybondTM The resulting bump had 23 μm of silver epoxy on top 45 μm of gold

(d) MMIC chip and the sapphire substrate were flip-chip bonded with the epoxy in between The M9 bonder was used with a bonding force of 30 gbump and a bonding time of 90 second at 110 degC Silver epoxy was compressed down to 5 μm


75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]

Insertion loss Return loss

Reference Bump material Bonding condition Lossfrequency

[1] Au 350 20 gpillar 02 dB77 GHz

[2] Au 275 230 Nmm2 02 dBNA

This work Au Ag epoxy 110 30gbump 0205 dB94 GHz

Active Radar SensorRF Characteristic

[1] Aoki S Someta H Yokokawa S Ono K Hirose T Ohashi Y ldquoA flip chip bonding technology using gold pillars formillimeter-wave applicationsrdquo in Proc IEEE MTT-S Int Microw Symp Dig 1997 vol 2 pp 731-734 1997

[2] Heinrich W Jentzsch A Richter H ldquoFlip-chip interconnects for frequencies up to W bandrdquo Electron Lett vol 37 issue 3 pp180-181 2001


Active Radar SensorTest image


Reference Bump material Bonding temperature Die shear strength [mg 2]

[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217

This work AuAg epoxy 110 573

The shear tests were performed using a model 4000 series shear test machine from DageTM widely used to measure the interconnection strength between the MMIC chip and the sapphire substrate The speed of the shear blade was 300 μms with the tip located at 40 μm above the surface of the sapphire substrate The flip-chip bonded die which used proposed low-temperature flip-chip bonding method and 20 bumps of 100 μm diameter was separated at a force of 900 g

[1] Kun-Mo Chu Jung-Sub Lee Han Seo Cho Hyo-Hoon Park Duk Young Jeon ldquoA fluxless flip-chip bonding for VCSEL arrays usingsilver-coated indium solder bumpsrdquo IEEE Trans Electronics Packag Manuf vol 27 no 4 pp 246-253 2004

[2] Tan Ai Min Sharon Pei-Siang Lim and Charles Lee ldquoDevelopment of solder replacement flip chip using anisotropic conductiveadhesivesrdquo in Proc 5th Electron Packag Tech Conf 2003 pp 390-396 2003

[3] Katsuyuki Sakuma Jun Mizuno Noriyasu Nagai Naoko Unami and Shuichi Shoji ldquoEffects of Vacuum Ultraviolet SurfaceTreatment on the Bonding Interconnections for Flip Chip and 3-D Integrationrdquo IEEE Trans Electronics Packag Manuf vol 33 no 3pp 212-220 2010

Active Radar SensorShear test




Taejong Baek

Advisor Jin-Koo RheeDepartment of Electronics and Electrical Engineering

Graduate SchoolDongguk University

Studies of the Millimeter-Wave Radiometric Sensor and Fabricated Passive Imaging System


Introduction


Introduction

The increased threats of criminal or terrorist action in recent years have led to the development of many techniques forthe detection of concealed weaponscontraband explosives or other threats

Traditional methodMetal detectors

X-ray imaging systems

Insufficient for modern and health threatsPlastic and liquid explosive

Plastic or ceramic guns and knives

Ionizing radiation

Advanced methodMillimeter-waveterahertz security systems

Motivation


IntroductionPrivate issue


Radiation law

Every object generates electromagnetic emissions at all wavelengths with intensity proportional to the product of itsphysical temperature and its emissivity in accordance with Plancks radiation law

Object Emissivity ()

Human skin 65 ~ 95

Plastics 30 ~ 70 depending on type

Paper 30 ~ 70 depending on moisture content

Ceramics 30 ~ 70

Water 50

Metal ~ 0

Object radiationObject emissivity + reflectivity (reflect the radiation form the environment) = 1

Radiation = Object reflectivity + Object emissivity

Both the amplitude and the wavelength of the radiation peak are dependent on the temperature of the object

Background and Theory


Target SpecificationSystem Arrangement

Realndashtime (ge 1 Hz) imaging (82 GHz to 102 GHz )

Spatial resolution (le 5 cm2)

1degC temperature resolution at (ge 1 Hz)

Fullndashbody scanning (3m stand-off )


Noise equivalent temperature difference (∆푻)The minimum detectable change in signal at the input is equal to the noise power at the output times the reciprocal of the squared response of the system evaluated at Tsys Sometimes radiometric resolution is referred to as the noise equivalent temperature difference ie ldquoNETDrdquo or sensitivity

∆푻 =푻풔풚풔∆풇흉

Whole imaging measurement time (t) the number of detector (n) and total number of picture point (m)

흉 =풕풏풎

number of samplings (sn) reflector scanning cycle time (rt)

풕 =풎

풏 times 풔풏풓풕

NETDSystem Arrangement


Total number of picture point (m)풎 = ퟏퟐퟖ timesퟏퟔ = ퟐퟎퟒퟖ풑풐풊풏풕

whole imaging measurement time (t)

풕 =풎

풏times 풔풏풓풕=

ퟐퟎퟒퟖ

ퟏퟔ timesퟏퟐퟖퟏ= ퟏ풔풄풆풏풆풔풆풄

in this case integration time (흉) is

흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ

= ퟕ ퟖ풎풔풆풄풓풆풄풆풊풗풆풓

Integration TimeSystem Arrangement


Radiometer input signal (thermal noise) power

푷풅푩풎 = ퟏퟎ 풍풐품(풌푩푻times 1000)+10 퐥퐨퐠(∆풇)

where Δf is the bandwidth in hertz (set 20 GHz)

푷풅푩풎 = minusퟏퟕퟒ + ퟏퟎퟑ asymp minusퟕퟎ풅푩풎

Lens concentrate thermal noise ratio (dB)

푳풆풏풔풂풑풆풓풕풖풓풆풂풓풆풂푨풏풕풆풏풏풂풂풑풆풓풕풖풓풆풂풓풆풂

times 풔풉풂풑풆풎풂풕풄풉 = 10dB

Hence a gain of 70 dB at least is required to provide at the output a detectable signal (ge0 dBm) The total input thermal noise is through the lens is ndash70 dBm + 10 dB = ndash60 dBm Therefore we need an amplifier of least 60 dB or more gain

Noise TemperatureSystem Arrangement


Basic radiometer model

The system noise temperature at the receiver input is Tsys= TA+ Trec


where Trec is the noise temperature of the detector TA is the effective temperature of the antenna Δf is the RF bandwidth and τ is thepost-detection integration time constant

System elements to be considered for high performance

1 Antenna return loss

2 LNA return loss noise figure

3 Frequency bandwidth of each element

4 Transition return loss insertion loss

5 Diode noise temperature

System RequirementRequirements


Component Parameter Target Specification

System

NETD (ΔT)ResolutionFrame RateBandwidth (Δf)Noise figure

le 1 Kle 5 cm1 scenesec20 GHzle 15 dB

LNANoise figureGainReturn loss

le 10 dBge 60 dB

le ndash15 dB

AntennaGainReturn lossVSWR

ge 15 dBi

≦ ndash25 dB≦ 12

DetectorOutput voltage rangeSensitivity

100 mV ~ 1000 mVgt 500 mVmW (0 dBm)

Radiometer Type System Characteristics

Dickeradiometer

Super heterodyne receiver

superior low noise temperaturecomplicated structureneed local oscillatorhigh cost

Full powerradiometer

Directndashdetection receiverlow noise temperaturesimple structurelow power consumption



Development of Radiometer Receiver


An antenna with a large aperture has more gain than a smaller on just as it captures more energy from a passing radio wave it also radiates more energy in that direction Gain may be calculated as

푮풅푩풊 = ퟏퟎ 퐥퐨퐠 휼ퟒ흅흀ퟐ

푨

with reference to an isotropic radiator ƞ is the efficiency of the antenna and A is the aperture area

Antenna is designed to have the peak gain of 175 dBi at the center frequency of 94 GHz and the return loss of less than -25 dB in W-band and the small aperture size of 6 mm times 9 mm for antenna configuration with high resolution

AntennaGain


Returnlossisameasureofthereflectedpowerandforwardpowerratio

푹풆풕풖풓풏푳풐풔풔 풅푩 = minusퟐퟎ 퐥퐨퐠푺푾푹minus ퟏ푺푾푹+ ퟏ

Specification

Frequency range (GHz) 75 ~ 110

Waveguide type WR-10

VSWR (max) 11

Mid-band Gain (dB Typ) 175

Total Length (L) 32

Aperture size (W times H) mm2 9 times 6

AntennaEfficiency


Antenna ndash array for multi-channel

Multi-channel antenna array To obtain high accuracy and resolution various methods areproposed Conventional beamforming method is a straight forwardmethod but its angle resolution is limited by aperture of the antennaarray which implies that the number of antennas should be increasedto satisfy resolution requirement 8 times 2 horn arrays antennadeveloped for available real-time passive imaging system

Antenna


Specifications

Frequency89 GHz ~ 99 GHz

(center frequency 94 GHz)

Center wavelength 3191 mm(c=υλ)

Diameter le 200 mm

Material Teflon

Viewing angle plusmn113deg(target distance 3m)

LensLens - specification

Optical path and spot-patterns for different incident angles are calculated and compared without or with an extended hemispherical lens by using ray-tracing method

Teflon was the material of the lens the lens is reflected from the surface of the lens is placed in the hole In addition depth of non-reflective layer is 066 mm pitch 07 mm and groove length 04 mm


LNA ndash OscillationSystem Specification


80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22

LNA module ndash 4-stage

4-stage LNA module measured characteristics

Average linear gain 658 dB 81 ~ 102 GHz

682 dB 94 GHz

LNA


Detector ndash TransitionSystem Specification


Detector ndash OutputSystem Specification


Size ndash Array SystemSystem Specification


Radiometer

16 receivers array multi-channel radiometer

Radiometer Receiver

radiometer receiver


Development of Security Screening System


System block diagramSecurity Screening System


24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)

Step motor DriverControl signal

Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V

+ - G AC+ - G AC+V -V FG L N LNG Com V2 Com V1

AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2

MonitorTo Sensor Part

(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box

Circuit mapSecurity Screening System


Measurement SWSecurity Screening System

Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)


Comparison with Commercial MMW Imaging


Name L3 safeviewprovision100

Agilent Qinetiq Smiths Tadar

Sago Trex BrijotBIS-WDS

ThruVisionT4000

This Work

base SPO 20 ST150 Real Time Imager

Application Portal Portal Portal Stand-off8 ndash 30m

Portal Stand-off5m

Stand-off Stand-off3-10m

Stand-off3-10m

Stand-off3m

ActivePassive

Active Active Passive Passive PassiveActive

Passive Passive Passive Passive Passive

Frequency(Bandwidth)

24-30GHz 24GHz 35GHz 94GHz 94GHz(gt 10GHz)

76-94GHz 76-94GHz 90GHz(20 GHz)

250GHz 94GHz(10 GHz)

ImagingSystem

Source ampReceiverarray rotates around subject

Active antenna array programm-able fresnelzone-plate

Folded Schmidtcamera conical scan off-axis rotating mirror

Mechanical Tilted rotatingmirror

Frequency scanned antenna and reflector

Phased array of freqscanned antennas

Receiverarray of multi-channelscannedantennasand reflector

Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC

InP Direct detection

InPHEMT MMIC

GaAsSchottkymixer

GaAs Direct detection (z-b Schottkydiode)

SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

03degree 10mm 6mrad 6mrad128times192pixel

5cm 3cm gt45 cm16times128 pixel(variable)

Refresh rate 2Hz 15Hz 15Hz 10HZ 05Hz 30Hz 4-10Hz 1-3Hz 1Hz

Aperture 90cm 80cm 60cm 18cm 12cm 20cm

DimensionsL times W times H

150 times 150 times 270




50 times 50 times110


Specification Brijot (indoor) This work (indoor)

Center Frequency 90 94

Bandwidth (Δf) 20 10

No of Receiver 16 16

System NETD (ΔT) 1 K le 2 K

Spatial Resolution 5 cm 5 cm

Image Quality clearly noisily

Reflesh Rate 4 ~ 10 Hz 1 Hz

∆푻 =푻풔풚풔

ퟏퟎ ∙ ퟏퟎퟗ timesퟕ ퟖ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟐ푲times ퟖퟖퟑퟏ = ퟏퟕퟔퟔퟑ푲

푻풔풚풔 = ퟏ푲times ퟖퟖퟑퟏ = ퟖퟖퟑퟏ푲


ퟐퟎ ∙ ퟏퟎퟗ timesퟏ ퟗ ∙ ퟏퟎ ퟑ 푻풔풚풔 = ퟏ푲 times ퟔퟏퟔퟒ = ퟔퟏퟔퟒ푲

Our system

Brijot

DiscussionSystem Noise Temperature


Video Demo


Video Demo2011 01 31


Conclusion


ConclusionSummary

Passive Imagingsensor

Antenna Frequency Waveguide type VSWR (max) Mid-band Gain Return loss Size

77 ~ 110 GHz WR-10 11 175 dBi lt - 25 dB 9 times 6 times 32 mm

LNA module Frequency Gain (1st) Returen Loss (1st)

Gain (4st) Returen Loss (4st)

Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module

Frequency Operation range

Output voltage Minimum detectable

power

Sensitivity (input 0 dBm)

75 ~ 110 GHz -10 ~ 15 dBm 100 ~ 1500 mV -20 dBm 350~400 mVmW

Securityscreening

System NETD Spatial resolution

Refresh rate ReflectorScan angle

MMW lens diameter

2K 4cm 1Hz plusmn 20 deg 20 cm

Type 82~102 GHz Passive imaging (indoor)

Bandwidth 20 GHz

Dimension (cm) 50 times 50 times 110

IR and CCD image fusion

Spatial resolution 45 cm (16 times 128 pixel)

Temperature sensitivity 2


Research field



30 300 3000


10 1 01

Frequency (GHz)

Wave-length (mm)















ITS

Military

WLANImaging

system

Imaging

system

Medical


4



FC Bonder

E-Beam Lithography









Au Plating System



Furnace Metritherm









Plasma Asher

Furnace




Fabricated MHEMT



70 nm




Gate length 70 nm



ZEP520 DCB = 15 1

PMGI













330 GHz

425 GHz


- fT 330 GHz

- fmax 425 GHz

RF performance



[1][2]

[3]

[4]

[5]

[6] [7]

[8] [9]

[10]

This work











vol 25 no 6 pp 348-350 2004






Transmission line

Basic elements



SubstrateSubstrate


Substrate loss


Motivation of DAML



Substrate 1

Substrate 2

Substrate

(1)

(2)

(3)






Complex processes



DAML technology


Motivation of DAML






SI GaAs substrate

Dielectric post

Signal line

Ground


DAML


w

d

h

g

3h ⅹ2 + w







wh

whgd

whgd

polyimidepolyimide

eff

121

12

1)23(

1

2

1)23(

12

2

DAML

)23(1

2

whgd

polyimider













formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







30 300 3000


10 1 01

Frequency (GHz)

Wave-length (mm)















ITS

Military

WLANImaging

system

Imaging

system

Medical


4



FC Bonder

E-Beam Lithography









Au Plating System



Furnace Metritherm









Plasma Asher

Furnace




Fabricated MHEMT



70 nm




Gate length 70 nm



ZEP520 DCB = 15 1

PMGI













330 GHz

425 GHz


- fT 330 GHz

- fmax 425 GHz

RF performance



[1][2]

[3]

[4]

[5]

[6] [7]

[8] [9]

[10]

This work











vol 25 no 6 pp 348-350 2004






Transmission line

Basic elements



SubstrateSubstrate


Substrate loss


Motivation of DAML



Substrate 1

Substrate 2

Substrate

(1)

(2)

(3)






Complex processes



DAML technology


Motivation of DAML






SI GaAs substrate

Dielectric post

Signal line

Ground


DAML


w

d

h

g

3h ⅹ2 + w







wh

whgd

whgd

polyimidepolyimide

eff

121

12

1)23(

1

2

1)23(

12

2

DAML

)23(1

2

whgd

polyimider













formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz

















ITS

Military

WLANImaging

system

Imaging

system

Medical


4



FC Bonder

E-Beam Lithography









Au Plating System



Furnace Metritherm









Plasma Asher

Furnace




Fabricated MHEMT



70 nm




Gate length 70 nm



ZEP520 DCB = 15 1

PMGI













330 GHz

425 GHz


- fT 330 GHz

- fmax 425 GHz

RF performance



[1][2]

[3]

[4]

[5]

[6] [7]

[8] [9]

[10]

This work











vol 25 no 6 pp 348-350 2004






Transmission line

Basic elements



SubstrateSubstrate


Substrate loss


Motivation of DAML



Substrate 1

Substrate 2

Substrate

(1)

(2)

(3)






Complex processes



DAML technology


Motivation of DAML






SI GaAs substrate

Dielectric post

Signal line

Ground


DAML


w

d

h

g

3h ⅹ2 + w







wh

whgd

whgd

polyimidepolyimide

eff

121

12

1)23(

1

2

1)23(

12

2

DAML

)23(1

2

whgd

polyimider













formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







FC Bonder

E-Beam Lithography









Au Plating System



Furnace Metritherm









Plasma Asher

Furnace




Fabricated MHEMT



70 nm




Gate length 70 nm



ZEP520 DCB = 15 1

PMGI













330 GHz

425 GHz


- fT 330 GHz

- fmax 425 GHz

RF performance



[1][2]

[3]

[4]

[5]

[6] [7]

[8] [9]

[10]

This work











vol 25 no 6 pp 348-350 2004






Transmission line

Basic elements



SubstrateSubstrate


Substrate loss


Motivation of DAML



Substrate 1

Substrate 2

Substrate

(1)

(2)

(3)






Complex processes



DAML technology


Motivation of DAML






SI GaAs substrate

Dielectric post

Signal line

Ground


DAML


w

d

h

g

3h ⅹ2 + w







wh

whgd

whgd

polyimidepolyimide

eff

121

12

1)23(

1

2

1)23(

12

2

DAML

)23(1

2

whgd

polyimider













formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








Fabricated MHEMT



70 nm




Gate length 70 nm



ZEP520 DCB = 15 1

PMGI













330 GHz

425 GHz


- fT 330 GHz

- fmax 425 GHz

RF performance



[1][2]

[3]

[4]

[5]

[6] [7]

[8] [9]

[10]

This work











vol 25 no 6 pp 348-350 2004






Transmission line

Basic elements



SubstrateSubstrate


Substrate loss


Motivation of DAML



Substrate 1

Substrate 2

Substrate

(1)

(2)

(3)






Complex processes



DAML technology


Motivation of DAML






SI GaAs substrate

Dielectric post

Signal line

Ground


DAML


w

d

h

g

3h ⅹ2 + w







wh

whgd

whgd

polyimidepolyimide

eff

121

12

1)23(

1

2

1)23(

12

2

DAML

)23(1

2

whgd

polyimider













formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








Gate length 70 nm



ZEP520 DCB = 15 1

PMGI













330 GHz

425 GHz


- fT 330 GHz

- fmax 425 GHz

RF performance



[1][2]

[3]

[4]

[5]

[6] [7]

[8] [9]

[10]

This work











vol 25 no 6 pp 348-350 2004






Transmission line

Basic elements



SubstrateSubstrate


Substrate loss


Motivation of DAML



Substrate 1

Substrate 2

Substrate

(1)

(2)

(3)






Complex processes



DAML technology


Motivation of DAML






SI GaAs substrate

Dielectric post

Signal line

Ground


DAML


w

d

h

g

3h ⅹ2 + w







wh

whgd

whgd

polyimidepolyimide

eff

121

12

1)23(

1

2

1)23(

12

2

DAML

)23(1

2

whgd

polyimider













formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz














330 GHz

425 GHz


- fT 330 GHz

- fmax 425 GHz

RF performance



[1][2]

[3]

[4]

[5]

[6] [7]

[8] [9]

[10]

This work











vol 25 no 6 pp 348-350 2004






Transmission line

Basic elements



SubstrateSubstrate


Substrate loss


Motivation of DAML



Substrate 1

Substrate 2

Substrate

(1)

(2)

(3)






Complex processes



DAML technology


Motivation of DAML






SI GaAs substrate

Dielectric post

Signal line

Ground


DAML


w

d

h

g

3h ⅹ2 + w







wh

whgd

whgd

polyimidepolyimide

eff

121

12

1)23(

1

2

1)23(

12

2

DAML

)23(1

2

whgd

polyimider













formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







[1][2]

[3]

[4]

[5]

[6] [7]

[8] [9]

[10]

This work











vol 25 no 6 pp 348-350 2004






Transmission line

Basic elements



SubstrateSubstrate


Substrate loss


Motivation of DAML



Substrate 1

Substrate 2

Substrate

(1)

(2)

(3)






Complex processes



DAML technology


Motivation of DAML






SI GaAs substrate

Dielectric post

Signal line

Ground


DAML


w

d

h

g

3h ⅹ2 + w







wh

whgd

whgd

polyimidepolyimide

eff

121

12

1)23(

1

2

1)23(

12

2

DAML

)23(1

2

whgd

polyimider













formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








Transmission line

Basic elements



SubstrateSubstrate


Substrate loss


Motivation of DAML



Substrate 1

Substrate 2

Substrate

(1)

(2)

(3)






Complex processes



DAML technology


Motivation of DAML






SI GaAs substrate

Dielectric post

Signal line

Ground


DAML


w

d

h

g

3h ⅹ2 + w







wh

whgd

whgd

polyimidepolyimide

eff

121

12

1)23(

1

2

1)23(

12

2

DAML

)23(1

2

whgd

polyimider













formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Substrate 1

Substrate 2

Substrate

(1)

(2)

(3)






Complex processes



DAML technology


Motivation of DAML






SI GaAs substrate

Dielectric post

Signal line

Ground


DAML


w

d

h

g

3h ⅹ2 + w







wh

whgd

whgd

polyimidepolyimide

eff

121

12

1)23(

1

2

1)23(

12

2

DAML

)23(1

2

whgd

polyimider













formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz










SI GaAs substrate

Dielectric post

Signal line

Ground


DAML


w

d

h

g

3h ⅹ2 + w







wh

whgd

whgd

polyimidepolyimide

eff

121

12

1)23(

1

2

1)23(

12

2

DAML

)23(1

2

whgd

polyimider













formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






w

d

h

g

3h ⅹ2 + w







wh

whgd

whgd

polyimidepolyimide

eff

121

12

1)23(

1

2

1)23(

12

2

DAML

)23(1

2

whgd

polyimider













formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz
















formation



Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Dielectric Post

Fabricated DAML


Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Sacrificial Layer

Fabricated DAML



Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Fabricated DAML

Fabricated DAML



2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







2001 pp 1881-1884


vol 21 no 2 pp 171-176 1998


vol 46 no 5 pp 623-631 1998


pp 95-105 1991





vol 46 no 11 1998 pp 1845-1849 1998



vol 39 no 25 pp 1827-1828 2003

DAML Characteristic






Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz










Lower Ground Plane

Upper Ground Plane







SDAML



Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







Fabricated DAML



80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







80(GHz) 163 185

94(GHz)

189 153

110(GHz)

222 213







0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








0 20 40 60 80 100 120 14000

05

10

15

20

25

30

35

40

Inse

rtion

loss

[dB

cm]

Frequency [GHz]


60(GHz)

94(GHz)

120(GHz)

DAML(10 microm) 187 256 31

DAML(17 microm) 127 189 242

SDAML(17 microm) 107 141 167


CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






CPW

Microstrip

DAML

Reduced Size DAML

λg 4 94 GHz


CPW 304 microm


DAML 792 microm

RS-DAML 478 microm








Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz










Isolation -355 dB


Return loss -369 dB






Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








Return loss (dB)

Chip size(mm2)

Centerfrequency

(GHz)

1 (CPW)

About -35 About -20 05 ⅹ05 90

RSCDAML -361 -369 06ⅹ052 94








10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz









10 microm

50 Ω termination




( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








( 85-105 GHz)

Coupling loss

357 plusmn 022 dB





CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








CaseTransmission


(dB)Isolation

(dB)

Centerfrequency

(GHz)


Thiswork -372 -335 -34 94

Hybrid Ring Coupler



Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Diameter 0888 mm






Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








Diameter 1460 mm

Reduced Coupler

Diameter 0888 mm






75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








75 80 85 90 95 100 105 110

-60

-50

-40

-30

-20

-10

0

S-p

aram

eter

[dB]

Frequency [GHz]


Insertion loss

70 75 80 85 90 95 100 105 110 115

-40

-30

-20

-10

0

S-pa

ram

eter

[dB]

Frequency [GHz]

S11 S22 S33

Return loss



35



CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







CaseTransmission


(dB)Isolation

(dB)Diameter

(mm)

Centerfrequency

(GHz)


DAML -372 -335 -34 146 94

RSCDAML -444 -435 -4823 088 94



36





(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz









(a) (b)


Fabricated BPF

(b)

(a)


37


60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






60 65 70 75 80 85 90 95 100 105 110 115 120-40

-35

-30

-25

-20

-15

-10

-5

0

5

Inse

rtion

Los

s (d

B)

Frequency (GHz)

S11

S22

S21

S12

Simulation








38






39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz










39


Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Fabricated Antenna


(b) 60 GHz RDRA




40


Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Measured Results


41





Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz









Design strategy

MEMS coupler

MEMS library

Diode amp CPW lines

MMIC library

Schematic


Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Layout


70 nm gate

MHEMT

RF

IF2

LO

IF1

Dielectric post






DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz









DAML



GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







GaAs epi-wafer




MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






MHEMT


Mesa etching




MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







MHEMT




ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






ResistorMHEMT


Resistor formation



MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






MHEMT Resistor

































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz


































DAML formation



70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






70 nm MHEMT

Hybrid ring coupler

IF1 IF2

RF

LO

Chip size

18 mm times 21 mm


W-band coupler size

146 mm (diameter)








- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz










- RF power -10 dBm

- LO power 6 dBm



LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






LO-to-RF isolation

LO-to-RF isolation

- LO power 0 dBm

lt -30 dB

- LO freq 9365-9425 GHz




CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







CaseMixer Design

FeaturesConversion

Gain (dB)Device

Technology

LOFrequency

(GHz)

RFFrequency

(GHz)

RF-LOIsolation

(dB)












- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







- References













Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Taejong Baek


Dongguk University



Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Introduction













ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz

















ObjectTransmitted

ReceivedFreq

T


T





InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






InP Gunn Diode




67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








67


1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






1 Wafer Cleaning



1) Initial cleaning

TCE

Acetone

IPA

DI water rinse


2)Soft baking


4)Development

5)Post baking

6)Wet etching

7)PR strip

68





1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz









1)Cleaning

2)Oxide etching

3)Metal evaporation

4)Protection layer

1) Cleaning


3) Soft baking



6) Development

69





1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz









1)Cleaning


1) Au plating

70





1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz









1) Wafer mount


3) Wafer de-mount

4) Cleaning

1)Cleaning


3)Soft baking


5)Reverse baking

6)Flood exposure

7)Development

8)Oxide etching

9)Metal evaporation

10)Lift-off

71



10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







10 MESA etching


1)Seed evaporation


3) Soft baking


5) Development

6) Oxide etching

7) Au plating

8) PR strip

9) Seed etching

1)Cleaning


3)Soft baking



6)Development

7)Hard baking

8)Dry etching

9)PR strip

72



(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







(Cathode)

InP

anode



1) Cleaning

2) Oxide etching

3) Au etching

73


Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Packaged Diode


StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






StudAuSn solder

AgSn solderLid

Gunn diode chip

Ceramic ring

Au wire

3-48 UNC-2A THREAD

Package element


75



Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







Stud


2 Die attachChip


76



4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







4 Lid junctionLid


77




78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








78





79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz









79




1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








1 124 299 94 178

2 117 260 9398 16

3 97 299 9425 156

4 109 349 939 166

5 93 349 938 164



80


Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Transceiver














(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz


















(a) (b)

(c) (d)




75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






75 80 85 90 95 100 105 110 115-35

-30

-25

-20

-15

-10

-5

0

S-pa

ram

eter

[dB

]

Frequency [dB]




[2] Au 275 230 Nmm2 02 dBNA









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz









[1] Indium

100 155

150 219

200 438

[2]ACP 220 105

ACF 220 107

[3] CuSn 260 217










Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








Taejong Baek





Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Introduction


Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Introduction






Ionizing radiation


Motivation




Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








Radiation law



Human skin 65 ~ 95



Ceramics 30 ~ 70

Water 50

Metal ~ 0















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz















흉 =풕풏풎


풕 =풎






풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








풕 =풎


ퟐퟎퟒퟖ



흉 =풕풏풎

=ퟏퟔퟐퟎퟒퟖ



























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz





























System




le 10 dBge 60 dB

le ndash15 dB


ge 15 dBi



100 mV ~ 1000 mVgt 500 mVmW (0 dBm)


Dickeradiometer











푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz










푨



AntennaGain




Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








Specification



VSWR (max) 11


Total Length (L) 32


AntennaEfficiency




Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








Antenna


Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Specifications




Diameter le 200 mm

Material Teflon








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








80 85 90 95 100 105 110

-80

-60

-40

-20

0

20

40

60

80

S-Pa

ram

eter

[dB

]

Frequency [GHz]

S11

S21

S12

S22




682 dB 94 GHz

LNA








Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz












Radiometer


Radiometer Receiver

radiometer receiver






24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz










24V15V 12V 5V 33V 33V

ACG

Power2

(Floating)

Power2

(Floating)

Power2

(Floating)

DirectLine

(Floating)

NTSC

CAM

IR

CAM

DC

Cont

FAN

NTSC Signal

(with Ground)

IR Signal

(with Ground)

DC 12VDC 12V

DC 12V

DC 12V

EmbeddedSystem

DC 5VSerial to USB

RS232 USB To PC

(with Ground)


Step

Motor

DC 24V

Encoder

MMW Sensor

USB To PC

(with Ground)

Drain

Gate

DC 15V


AC GKeyboard

Mouse USB

VGA

WiFi

CAM1

CAM2


(with Ground)

To Sensor Part

(with Ground)

+V-V FG ACAC

DirectLine

(Floating)

Sensor part

PC part

Power part

DC 15V

DC 5V

G

FG FG

G

ADC1~16 Ch

G

Shield box




Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz







Ch-1 Ch-2

Ch-3 Ch-4

Ch-5 Ch-6

Ch-7 Ch-8

Ch-9 Ch-10

Ch-11 Ch-12

Ch-13 Ch-14

Ch-15 Ch-16

CCD IR

16 m

(variable pixel)

06 m (16 pixel)







ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz











ThruVisionT4000

This Work



Portal Stand-off5m


Stand-off3-10m

Stand-off3m

ActivePassive





76-94GHz 76-94GHz 90GHz(20 GHz)


ImagingSystem








Receivers 1 64 64 24 1 232 16 16

Receivertechnology

InPMMIC


InPHEMT MMIC

GaAsSchottkymixer


SystemNETD

5K 1K 1-3K 6K 1K 1-15K le 2K

SpatialResolution

05cm 05cm 075cm2cm

























Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz



















Our system

Brijot



Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






Video Demo




Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz








Conclusion


ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz






ConclusionSummary






Noise Figure (Chip)

82 ~ 102 GHz 196 dB -11 dB 658 dB -57 dB 41 dB

Detector module



power



Securityscreening



MMW lens diameter



Bandwidth 20 GHz





20130723 research accomplishment_ud

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