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1 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
ITRS Public ConferenceEmerging Research Devices
Preparations for 2009 ERD Chapter Re-write
Agenda Emerging Research Technology Workshops (ERD/ERM) Carbon-based Nanoelectronics Highlight Korea ERD
Jim Hutchby – SRCU-In Chung - Samsung
December 9, 2008
2 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Hiroyugi Akinaga AIST Tetsuya Asai Hokkaido U. Yuji Awano Fujitsu George Bourianoff Intel Michel Brillouet CEA/LETI Joe Brewer U. Florida John Carruthers PSU Ralph Cavin SRC U-In Chung Samsung Byung Jin Cho KAIST Sung Woong Chung Hynix Shamik Das Mitre Erik DeBenedictis SNL Simon Deleonibus LETI Kristin De Meyer IMEC Michael Frank AMD Christian Gamrat CEA Mike Garner Intel Dan Hammerstrom PSU Wilfried Haensch IBM Tsuyoshi Hasegawa NIMS Shigenori Hayashi Matsushita Dan Herr SRC Toshiro Hiramoto U. Tokyo Matsuo Hidaka ISTEK Jim Hutchby SRC Adrian Ionescu ETH Kohei Itoh Keio U. Kiyoshi Kawabata Renesas Tech Seiichiro Kawamura Selete Rick Kiehl U. Minn Suhwan Kim Seoul Nation U. Hyoungjoon Kim Samsung
Atsuhiro Kinoshita Toshiba Dae-Hong Ko Yonsei U. Hiroshi Kotaki Sharp Atsuhiro Kinoshita Toshiba Atsuhiro Kinoshita Toshiba Franz Kreupl Qimonda Nety Krishna AMAT Zoran Krivokapic AMD Phil Kuekes HP Jong-Ho Lee Kyungpook Nation U. Lou Lome IDA Hiroshi Mizuta U. Southampton Murali Muraldihar Freescale Fumiyuki Nihei NEC Ferdinand Peper NICT Yaw Obeng NIST Dave Roberts Air Products Kaushal Singh AMAT Sadas Shankar Intel Satoshi Sugahara Tokyo Tech Shin-ichi Takagi U. Tokyo Ken Uchida Toshiba Yasuo Wada Toyo U. Rainer Waser RWTH A Franz Widdershoven NXP Jeff Welser NRI/IBM Philip Wong Stanford U. Kojiro Yagami Sony David Yeh SRC/TI In-Seok Yeo Samsung In-K Yoo SAIT Peter Zeitzoff Freescale Yuegang Zhang LLLab Victor Zhirnov SRC
Emerging Research Devices Working Group
3 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
year
Beyond CMOS
Elements
Existing technologies
New technologies
Evolution of Extended CMOS
More Than Moore
ERD-WG in Japan
4 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
New ERD/ERM Roadmapping Task
Determine which, if any, current approaches to providing a “Beyond CMOS” information processing technology is/are ready for more detailed roadmapping and enhanced investment.
5 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
2008 ERD/ERM Workshops Workshop topic Date Location Meeting
Emerging Research Memory Devices
April 2 2008
Bonn, Germany
ITRS Spring meeting
Emerging Research Architectures
July 10-11 2008
Santa Cruz, CA, USA
Semicon West
Evaluation of Beyond CMOS Logic Device Tech
July 12-13 2008
San Francisco, CA, USA
Semicon West
Emerging Research Logic Devices
Sept. 22 2008
Tsukuba, Japan
SSDM
Emerging Research Materials
Nov. 10 2008
Austin, TX, USA
MMM*
Emerging Research Materials
March 2009
Okinawa, Japan
* 53rd Magnetism and Magnetic Materials Conference
Co-sponsored by the National Science Foundation
6 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Device Technology Entry Augment/Extend CMOS Beyond CMOS
Nanoelectromechanical Switch X
Spin Transfer Torque X
Collective Strongly Correlated Many-electron Spin Devices X
Carbon-based Nanoelectronics X X
Atomic / Electrochemical Metallization Switches X
Single Electron Transistors X
CMOL / FPNI (Field Programmed Nanowire Interconnect) X
Candidate Technologies for Information Processing
6
7 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Emerging Research DeviceTechnology Candidates Evaluated Nano-electro Mechanical Switches Collective Spin Devices Spin Transfer Torque Devices Atomic Switch / Electrochemical Metallization
Switch Carbon-based Nanoelectronics Single Electron Transistors CMOL / Field Programmable Nanowire
Interconnect (FPNI)
8 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
ERD/ERM TWG Recommendation
The ERD/ERM TWGs recommend to the International Roadmap Committee ---
Carbon-based Nanoelectronics to include carbon nanotubes and
graphene
For additional resources and detailed road mapping for ITRS as promising technologies targeting commercial demonstration in the 5-10 year horizon.
9 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
SP2 Carbon: 0-Dimension to 3-Dimension
Fullerenes (C60) Carbon Nanotubes
GraphiteGraphene
0D 1D 2D 3D
Atomic orbital sp2
10 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Graphene Electronics: Conventional & Non-conventional
Conventional Devices
Cheianov et al. Science (07)
Graphene Veselago lense
FETBand gap engineered Graphene nanoribbons
Nonconventional Devices
Trauzettel et al. Nature Phys. (07)
Graphene psedospintronics
Son et al. Nature (07)
Graphene Spintronics
Graphene quantum dot
(Manchester group)
11 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Nanotube FET
Band gap: 0.5 – 1 eVOn-off ratio: ~ 106
Mobility: ~ 100,000 cm2/Vsec @RTBallistic @RT ~ 300-500 nmFermi velocity: 106 m/secMax current density > 109 A/cm2
Vsd (V)0-0.4-0.8-1.2
I sd (A
)
Ph. Avouris et al, Nature Nanotechnology 2, 605 (2007)
Schottky barrier switching
12 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
AdvantagesCarbon-based Nanoelectronics ---
For scaled CMOS, potentially can .. Impact geometric scaling by providing an alternate
MOSFET structure, and Provide a high mobility, high carrier velocity,
MOSFET channel replacement material.
For a new information process technology, potentially can …
Leverage R & D for CMOS (above) to … Provide a technology platform enabling a new “Beyond
CMOS” information processing paradigm
13 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Carbon-based Nanoelectronics
The intent of this recommendation is to highlight Carbon-based Nanoelectronics for additional roadmapping and investment ---
while sustaining exploration of other candidate approaches for “Beyond CMOS” information
processing technology.
14 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Summary Prepared for the 2009 ERD Chapter re-write Conducting six workshops in collaboration with
NSF, SRC, and ERM (Five accomplished)– Evaluate technology entries for 2009– Respond to IRC request (see next bullet)
Responded to IRC request to identify one or more Beyond CMOS technologies for roadmapping and enhanced investment– Conducted in-depth evaluation of seven Beyond CMOS
technologies (including one device architecture)– Recommended Carbon-based Nanoelectronics to IRC
15 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Emerging Research Device Work Groups
International Emerging Research Devices (ERD)
Work Group
US ERD WG
Korea ERDWG
European ERD WG
Japan ERD WG
Dr. U-In Chung
December 9th 2008U-In Chung, Samsung
ITRS ERD/ERM in KOREA
17
KSIAKSIA
Korea TWGsKorea TWGs
ERD(ERM) WGERD(ERM) WG
ERD ;U-In Chung (Samsung)
ERMemory Leader : In-Seok Yeo (Samsung)S.W.Chung(Hynix), H.S.Hwang (GIST), T.W.Kim (Sejong univ.), H.C.Sohn (Yonsei univ.), J.I.Hong (Yonsei univ.),C.S.Hwang(Seoul National univ.)
ERDevice Leader : Jong-Ho Lee (Kyungpook univ.)S.G.Kim(Dongbu high tech.), H.C.Shin(Seoul national univ.), Y.G.Choi(KAIST)
ERArchi. Leader : Su-Hwan Kim (Seoul national univ.)K.W.Kwon (SungKyunKwan univ.)
ERM ;Liaison :
U-In Chung
ERMaterial Leader; Dae-Hong Ko (Yonsei univ.)
J.M Myoung(Yonsei univ.), S.H.Hong(Seoul national univ.),
J.H.Lee(Hanyang univ.), B.J.Cho(KAIST)
IRC :Joo-Tae Moon (samsung)Jae-Sung Roh (Hynix)Yoon-Jong Lee (Dongbu)
ERD/ERM Organization & MemberERD/ERM Organization & Member
18
Relations in between organizationRelations in between organization
KSIA KSIA
TWG of KoreaTWG of Korea
ERD/ERM WGERD/ERM WG (U-in Jung) (U-in Jung) INC INC (Jin-ho Ahn) (Jin-ho Ahn)
4 Group/ 19 member
Device Maker Researcher(Samsung, Hynix, Dong-bu)
Professor(8 Univ. Seoul nat. univ. etc)
Member
Device Maker Technology Group
(Samsung, Hynix, Dong-bu)
TND (Tera Level Nano Device)Research group
NSI (Nano systems institute, Seoul
Univ.)
COSARCOSAR
R&D Promotion R&D Promotion
[ITRS] [INC]
19
ERD(ERM) WGERD(ERM) WG INC WGINC WG
Sharing WG members
1. Maintaining relationship between ITRS, INC and National Projects
by sharing working group members
National Projects LeadersNational Projects Leaders
KSIA / COSARKSIA / COSAR
Key Direction(1)Key Direction(1)
2. Active interaction with ITRS ERD members through ITWG activities
and forums : Working on 2009 ERD/ERM edition.
20
3. Regional interests ;
a. Emerging Research memory : Narrowing ~10nm memory candidates
Key Direction(2)Key Direction(2)
Nanomechanical Memory
Fuse-Antifuse Memory
Ionic Memory
Electronic Effects
Memory
Macro-molecula
r Memory
Molecular
Memories
Storage Mechanism
Electrostatically-controlled mechanical
switch
Multiple mech.
Ion transport
andredox
reaction
Multiple mechanism
s
Multiple mech.
Not known
Cell Elements
1T1R or 1D1R1T1R or 1D1R
1T1R or 1D1R
1T1R or 1D1R
1T1R or 1D1R
1T1R or 1D1R
Device Types
1) Nanobridge / cantilever2) telescoping CNT3) Nanoparticle
M-I-M (e.g., Pt/NiO/
Pt)
1) cation migration 2) anion migration
1) Charge trapping2) Mott transition3) FE barrier effects
M-I-M (nc)-I-M
Bi-stable switch
21
Key Direction(3)Key Direction(3)
3. Regional interest ;
b. Emerging Research Device :
- GaAs and Ge in ERD
- Focus on Energy effective devices (ex. BTBT devices)
c. Emerging Research Architectures :
- Focus on 3D Architectures
( CMOL, Molecular (oxide) switch bar )
d. Emerging Research Materials :
- Will work with Korean TWIGs such as Interconnect, PKG
- Too much focus on Devise, Focus on Material for memory
- Many forums on memory materials for MLC and 3 D