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Transcript of © Copyright Jenoptik, All rights reserved. Speaker Martin Wölz Laboratory performance and...
© Copyright Jenoptik, All rights reserved.
Speaker Martin Wölz
Laboratory performance and industrial quality:
Pump diodes for High-Energy Lasers
2014-11-13 DESY HEPTech AIME 2
Outline
JENOPTIK AG
Research-to-industry transfer: Diode Lab GmbH
Laser diodes for HEC-DPSSL
Laser diode stacks
Outlook: mass production
LIC3-5 2013-04-24 JENOPTIK Diode Lab GmbH
2
2014-11-13 DESY HEPTech AIME 3
3Lasers & Material Processing Division
JENOPTIK AGHistory
Ernst AbbeInnovator and reformer; in 1867 scientific director of and in 1875 partner in the Zeiss workshop
Carl Zeiss University mechanic and entrepreneur; founded the workshop for precision mechanics and optics in Jena in 1846
1945/46: Transfer of patents and dismantling of parts of the companyby the U.S. and Soviet armies.
1946: A new Zeiss Company is founded in Oberkochen.
The Zeiss plant in Jena, East Germany, is converted into state property.
Carl Zeiss Jena GmbH gives rise to the creation of Jenoptik GmbH.
17,000 employees are dismissed
Demolition, renovation and development of former Zeissproduction sites
1991 1996/1998
In 1996 Jenoptik GmbH was converted into a joint stock corporation.
Going public: June 16, 1998
1945 - 1948
1846/1866
2014-11-13 DESY HEPTech AIME 4
LIC3-5 2013-04-24 JENOPTIK Diode Lab GmbH
4
OpticalSystems
Industrial Metrology
Traffic Solutions
Defense & Civil Systems
JENOPTIK AGDivisions and Business Units
Corporate Center
•Optics
•Micro Optics
•OptoelectronicSystems
•Roughnessand contourmeasurement
•Formmeasurement
•Dimensionalmeasurement
•Equipment
•Service Providing
•Mechatronics
•Sensor Systems
Corporate Center
Lasers & MaterialProcessing
•Lasers
•LaserProcessingSystems
Key Figures 2013
Sales (M€) EBIT (M€) Employees
Jenoptik Group 600.3 52.7 3433
Lasers & Optical Systems 224.7 24.6 1391
2014-11-13 DESY HEPTech AIME 5
5Lasers & Material Processing Division
JENOPTIK Division: Lasers & Material ProcessingBusiness Unit: Lasers
Lasers Laser Processing Systems
Epitaxy MountingProcessing
JENOPTIK Diode Lab GmbHBerlin
2014-11-13 DESY HEPTech AIME 6
2013-03-25 CHINA JENOPTIK
6
IntroductionSemiconductor laser diode bar
0 .15 -0 .5 m mp itch
0 .6-4 .0m mresonato r
0.1m
m
em itte r w id th0 .1 -0 .15m m
10.0m m (bar w id th)
p -con tact
n -con tact
Diode laser
fill factor = emitter width / pitch
2014-11-13 DESY HEPTech AIME 7
Outline
JENOPTIK AG
Research-to-industry transfer:JENOPTIK Diode Lab GmbH
Laser diodes for HEC-DPSSL
Laser diode stacks
Outlook: mass production
LIC3-5 2013-04-24 JENOPTIK Diode Lab GmbH
7
2014-11-13 DESY HEPTech AIME 8
8
Research-to-industry transferJENOPTIK Diode Lab GmbH
1997 Joint diode laser development
2002 Formation of JENOPTIK Diode Lab GmbH- transfer research results into production- employees from FBH join new company- FBH shares clean-room facilities
2004 8 types of high-power diode lasers qualified for productiondecision to build independent production facility
2006 20 employees
2007 Start of production
2009 Acquisition of TES AG epitaxial services
2014 47 employees
leader in laser diode development
JENOPTIK Laserdiode GmbH
experienced in LD packaging,test and qualification
Public projectsBRIMOHEMILAS
Recruiting
Development contracting
2014-11-13 DESY HEPTech AIME 9
JENOPTIK Diode Lab GmbH
9
Epitaxy Capabilities at JDL
9
Two multiwafer planetary reactors
- 12 x 3" or 4"
- 8 x 3" or 4"
Layer characterisation: HRXRD, C-V profiling, EL, PL, SEM, (SIMS)
Foundry services
Certified to ISO 9001:2008
2014-11-13 DESY HEPTech AIME 10
ReproducibilityElectro-optical characteristics
wafer-to-wafer wavelength reproducibility: better than 1 nm
1 2 3 4 5 6 7 8 9 10 11 12790
791
792
793
794
795
796
Em
issi
on W
avel
engt
h / n
m
Wafer Position #
2014-11-13 DESY HEPTech AIME 11
ReproducibilityElectro-optical characteristics
JDL-BAB-50-47-808-TE-60-1.5 44,400 bars
0,00
0,20
0,40
0,60
0,80
1,00
1,20
1,40
1,60
Mrz
. 08
Jul. 0
8
Okt.
08
Jan.
09
Apr.
09
Aug.
09
Nov.
09
Feb.
10
Jun.
10
slo
pe e
ffic
ien
cy,
W/A
0,00
0,10
0,20
0,30
0,40
0,50
0,60
thre
sh
old
cu
rren
t p
er
em
itte
r, A
SlopeI_th
Stability over 2.5 years : σ slope ± 1 % σ Ith ± 3 %
808 nm, 50% FF, 1.5 mm
M. Zorn et al., Proc of SPIE 7918-27 (2011)
2014-11-13 DESY HEPTech AIME 12
ReproducibilityReliability
808nm, 50%, 2mm• 27000 h min. lifetime (95% of devices degrade less than 20%)• 45000 h MTTF
0
10
20
30
40
50
60
70
80
0 2000 4000 6000 8000 10000 12000 14000 16000
P in
W
BI time in h
20% degradation limit
2014-11-13 DESY HEPTech AIME 13
LIC3-5 2013-04-24 JENOPTIK Diode Lab GmbH
13
Jenoptik Diode Lab GmbH (JDL)Semiconductors: Laser Bars & Single Emitters
Laser epitaxial structure design
InGaAlAsP / GaAs-Epitaxy (MOVPE)
GaAs-process line
Facet-Coating process
Single Emitter (SE) and Laser Bar
Wavelength: 760 nm – 1060 nm
Power range - Single emitter CW:12 W- Bar CW: 200 W- Bar QCW: 500 W(QCW = Quasi Continuous Wave,
pulsed operation)
Bare bar salelaser diode bars
2014-11-13 DESY HEPTech AIME 14
Outline
JENOPTIK AG
Research-to-industry transfer: Diode Lab GmbH
Laser diodes for HEC-DPSSL
Laser diode stacks
Outlook: mass production
LIC3-5 2013-04-24 JENOPTIK Diode Lab GmbH
14
2014-11-13 DESY HEPTech AIME 15
15
What can we do for high energy class lasers?
Mason et al., 7th HEC-DPSSL Workshop (2012)
Mercury design
10 J, 10 Hz: DiPOLE prototype
- Yb:YAG 200K, 940nm, 1.2ms QCW
- 40 kW pulse power from 192 bars
100 J …
Erlandson et al., Opt. Mater. Express 1, 1341 (2011)
LIFE pump architecture
- 200 J, 10 Hz: ELI Beamlines L3
- Nd:glass RT, 880 nm, 300µs QCW
- 3.2 MW pulse power, ca. 10.000 bars
Increase the power density of QCW bars !
2014-11-13 DESY HEPTech AIME 16
JDL New generation QCW barsReducing semiconductor “cost per Watt”
New chip generation (NG)vertical design
Targets
1) increased Pop per chip area
2) decreased “cost per Watt”
Vertical structure (epitaxy)designed by FBH:Pietrzak et al., Proc. of SPIE 896528 (2014)
1) better carrier confinement high internal efficiency ηi
higher Pop
2) thick waveguide narrow fast axis divergence
0.5 1 1.5 2 2.5 3 3.50
100
200
300
400
500
QCW 75% NGLinear (QCW 75% NG)
resonator length (mm)
Po
p (
W)
940 nm laser bars
new verticaldesign
2014-11-13 DESY HEPTech AIME 17
New generation quasi-CW 880 nm Bars (II)Better efficiency reduced “cost / Watt”
phenomenological model (char. Temp.)
Erbert et al., Top. Appl. Phys. 78, Springer (2000)
input parameters T0, T1
0.5 1 1.5 2 2.5 3
100W300W500W
resonator length (mm)
norm
aliz
ed e
ffici
ency
(arb
. uni
ts)
reference structure
2014-11-13 DESY HEPTech AIME 18
New generation quasi-CW 880 nm Bars (II)Better efficiency reduced “cost / Watt”
recall phenomenological model based on char. Temp.
input parameters T0, T1
new generation (NG) structure has efficiency maximum for smaller chip
0.5 1 1.5 2 2.5 3
100W300W500W
resonator length (mm)
norm
aliz
ed e
ffici
ency
(arb
. uni
ts)
NGmax. efficiency
at shorterresonator length
reference structure
2014-11-13 DESY HEPTech AIME 19
New generation quasi-CW 880 nm Bars (III)Power-voltage-current characteristic
Pop = 500 W
Iop = 450 A
Sop = 1.211.17 W/A WPEmax = 59.5%
WPEop = 55%
75% FF, L=1.5 mm (37 Emitters, W = 190 µm)
JDL-BAB-75-37-880-TE-500-1.5
2014-11-13 DESY HEPTech AIME 20
New generation quasi-CW 880 nm Bars (IV)Far-field profiles
Measured at:I= 400A (300µs, 10ms, T=25°C)
Fast axis:
qFWHM = 20.5°
q95% = 47.0°
Slow axis:
qFWHM = 8.3°
q95% = 10.0°
2014-11-13 DESY HEPTech AIME 21
device under test: JDL-BAB-75-37-880-TE-500-1.5 on microchannel cooler
conditions: 485A, 300µs, 100Hz (3% d.c.), 25°C
0.8 Gshots as of Oct, 2014, ongoing
New generation quasi-CW 880 nm Bars (V)Lifetime test
0 200 400 600 800 1000 1200 1400 1600
0 0.1 0.2 0.3 0.4 0.5 0.6
0
100
200
300
400
500
Test time (h)
Op
tica
l ou
tpu
t po
we
r (W
)
Pulses (GShot)
I = 485 Af = 100 Hz12 devices under test
2014-11-13 DESY HEPTech AIME 22
Outline
JENOPTIK AG
Research-to-industry transfer: Diode Lab GmbH
Laser diodes for HEC-DPSSL
Laser diode stacks
Outlook: mass production
LIC3-5 2013-04-24 JENOPTIK Diode Lab GmbH
22
2014-11-13 DESY HEPTech AIME 23
23 Business Unit Lasers I Lasers & Material Processing
Diode Laser Stacks
Used in direct applications, laser pumping, medical and research applications
4 to 25 laser bars vertical 2 to 4 bars horizontal
cw power per bar: 50 – 80 W l 808 nm50 – 120 W l 9xx nm
qcw power per bar: 100 – 300 W l 808 & 9xx nm
Capacity: thousands p.a.
Features
Vertical Diode Laser Stacks
qcw Stacks
Horizontal Diode Laser Stacks
2014-11-13 DESY HEPTech AIME 24
Passively cooled QCW laser diode stacks
CTE-matched
JenLas® QCW
QCW, quasi continuous wave, pulsed operation, t ≈ ms Semiconductor laser in stationary operation Low duty cycle thermal equilibrium not reached high pulse power
New cost-efficient mounting technology Flexible arrangement of laser emitters
Catalog product Lab demonstrator
2014-11-13 DESY HEPTech AIME 25
Passively cooled laser diode stacksfor pulsed operation
880 nm QCW bars
8 x in series
next generationJenLas® QCW stack technology
tp = 300µs
DC 1% 3% 6%10%
0 100 200 300 400 5000.0
1,000.0
2,000.0
3,000.0
4,000.0
5,000.0
0%
10%
20%
30%
40%
50%
8x JDL-BAB-75-37-880-TE-500-1.5, tp=300µs, vary duty cycle
Leistung 1%
Leistung 3%
Leistung 6%
current (A)
light
out
put p
ower
(kW
)
effici
ency
d.c.
1%
3%
6%
10%limit
thermal roll-over
operatingpoint
2014-11-13 DESY HEPTech AIME 26
Outline
JENOPTIK AG
Research-to-industry transfer: Diode Lab GmbH
Laser diodes for HEC-DPSSL
Laser diode stacks
Outlook: mass production
LIC3-5 2013-04-24 JENOPTIK Diode Lab GmbH
26
2014-11-13 DESY HEPTech AIME 27
Outlook: mass productionGaAs-based laser diodes
Laser confinement nuclear fusion schemes challenge laser diode supply world-wide
Lesson learned from red LED ramp-up:world-wide capacity can be doubled in two years if supported by demand(or by government programs)
2008 2010 2012 2014 2016 2018 2020 10,000
100,000
1,000,000
10,000,000
InGaAlP LED / yearLIFE one-time demandHigh-Power Laser capacityHiPER one-time demand
year
no. o
f 4"
waf
ers
2014-11-13 DESY HEPTech AIME 28
Summary
Jenoptik Diode Lab GmbH
FBH spin-off
development, production and bare bar sale
new 500W laser bars for QCW operation
next generation laser diode stacks
- JenLas® QCW
- standard layout available summer 2015
880 nm