© 2010 TSMC, Ltd PVD (Physical Vapor Deposition ) Technology tsmc FAB 14 吳佳俊.

© 2010 TSMC, Ltd

PVD (Physical Vapor Deposition )Technology

tsmc FAB 14吳佳俊

© 2010 TSMC, Ltd

2

What is Plasma

Convention PVD Process (DC plasma)

DC Plasma PVD bottle neck

What is RF ( Radio frequency )

PVD Chamber H/W Evolution

Metal line process overview

tsmc introduction

EE responsibility

Q & A

Outline

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What is Plasma ?電 Electrical Particles

漿 Collective motion

It contains highly reactive gas species

It emits light glow (O2->whitish-blue, N2->pink)

It is driven by electric energy electric field

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Created by current through a gas Gas is partially ionized

Quasi-neutral plasma

Nearly equal numbers of positive ( ) and negative ( )

Plasma Components

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Basic Plasma ConceptIonization

Initially, very few electrons are present in neutral gas

The electrons are accelerated by energy input

Newly produced electrons accelerate and ionize more neutrals

Ionized avalanche happened

Equi-potential cloud plasma is formed

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Basic Plasma ConceptExcitation-Relaxation

Light is emitted

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Basic Plasma ConceptDissociation

When an electron collides with a molecule with enough energy

Break its bonding energy into apart

Much less energy than ionization

Much higher dissociation rate than ionization

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DC PlasmaInitiation of The Plasma

Plasma is formed when an avalanche of ionization occurs

This results in a sea of positive and negative charged particles

The gas into plasmas transition involves going from insulating medium to conductive medium

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Basic Plasma ConceptSteady plasma source

Energetic electron (Plasma type)

Appropriate collision (Recipe)

Plasma sustain (Geometry design)

PVD

Dry-ETCH HDP-CVD

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PVD(Physical Vapor Deposition) Process

(DC plasma Deposition)

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SputteringMomentum transfer will dislodge surface atom off

About 70% energy converts to heat

About 25% energy generates secondary electrons

Secondary electrons ionize Ar

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DC Magnets SputteringFilm Uniformity

High target utilization

Full face erosion

Plasma ignition & sustaining

Step coverage

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DC Magnets Sputtering

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Convention PVD (DC Plasma)

Target (Metal source)

Plasma

Gas

Pump

Pedestal

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Pedestal

-V

Convention PVD Process

Ion generated & toward a target

Atoms sputter from target

Sputtered atoms traverse to substrate Condense

Nucleated

Form a film

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Film Growth Overview

Formation of isolated nuclei

Island formation

Formation continuous film grain boundaries

Grain growth

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DC Sputtering Deposition Schematic

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Aspect Ratio (h/w)

Step Coverage

h

W

SiO2

DC Plasma PVD Bottle Neck

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Collimator PVDLower deposition rate

Potential Particle issue

Shorter PM cycle

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Long throw PVD

L

Lower deposition rate

Worse film uniformity

Shorter PM cycle

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PVD(Physical Vapor Deposition) Process

(RF plasma Deposition)

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What is RF ?

AC frequencies

RF

20 kHz 300 MHz

audio microwave

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13.56MHzRadio Freq

uency

Radio frequency

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Why need to use AC Plasma ?Step Coverage Ration

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DC Biasing of RFRF power couples through the wafer like a capacitor

On-average, the wafer is biased negative (attracts ions)

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AC Capacitive Discharge

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Bias Effect

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What is RF Power?Existing metrology only measures in 1-D:

Power (watts)

However we know: Watts = Volts * Amps * cos( )

and Power is actually a 3 - D quantity:

current

voltage

phase

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RF PowerForward Power

Power from RF generator

Reflected Power Power return to RF generator

Load Power Power consumed by load

Direction Coupler

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Impedance (Z)Made up of two parts

Resistance

Reactance (Capacitive & Inductive)

Most RF generator are designed to operate into a 50 load

Plasma impedance ZL dependent on Power Gas pressure and chemistry

Power level and frequency

Chamber materials and geometry’s

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Maximum Power TheoremMaximum power when ZS = ZL

RF generator ZS = (50 j0)

ZS ZL Reflected power increased

RF tuner is required to transform ZS = ZL

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RF Matching NetworkManual match

Auto match Air capacitor (for low power / fast response)

Vacuum capacitor (for high power / low response)

Fixed match The most fast response / acceptable reflected power at certain

VSWR

Switching match (fast response)

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IMP (Ion Metal Plasma) ChamberDC RF source generate

Medium density Plasma

Add coil DC

Coil sputtering, blocking capacitor

Increase pedestal bias potential

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Incident Angle Distribution

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PVD Technology Trend

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SIP TechnologySelf ionized Plasma

Sputter discharge in which the dominate ionized species is from the target

Higher ionization rate and enough self-sputter yield to sustain plasma without Ar gas

Plasma Characteristics High power

Low pressure

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Large wafer to target spacing Leads to “long-throw” directional trajectories for neutral

Unbalance Magnet Control ion trajectories

Cooled, biased substrate

SIP Process

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AMAT EnCoRe Barrier/Cu Seed

PVD 1(Cu)

PVD 4(Cu)

PVD 2(TaN)

PVD 3(TaN)

Ch C(PC II)

Ch D(PC II)

Ch E(Degas

)

Ch F(Degas

)

SWLL A

SWLL B

FI

LP 1

LP 2TaN

Ta

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Introduction of tsmc

tsmc (Taiwan Semiconductor Manufacturing Company)

成立於 1987 年董事長兼總執行長張忠謀博士專業積體電路製造

二座 12“ 超大型晶圓廠 (GIGA fab) (fab 12 & 14)

四座 8“ 晶圓廠 (fab 3, 5, 6 & 8)

一座 6“ 晶圓廠 (fab 2)

二家海外子公司 ( 美國 WaferTech & 台積電 ( 中國 ))

照明、太陽能 (新事業群 )

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The Responsibility of Equipment Engineer設備的醫生

預防保養 ( 健康檢查 )

Trouble shooting ( 治療疾病 )

防範未然 ( 上工治未病 ,史記扁鵲倉公傳 )Innovation

Productivity

Cost

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Home Work

What is plasma and its components?

What are the benefit of DC magnets sputtering?

How many types do PVD chambers have?

How many types do RF matching have?

Please description the process flow and purpose in barrier/Cu seed deposition.

© 2010 TSMC, Ltd PVD (Physical Vapor Deposition ) Technology tsmc FAB 14 吳佳俊.

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Transcript of © 2010 TSMC, Ltd PVD (Physical Vapor Deposition ) Technology tsmc FAB 14 吳佳俊.