TSV CHIP STACKING MEETS PRODUCTIVITY - SEMI.ORG Kostner TSV Chip... · tsv chip stacking meets...

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TSV CHIP STACKING MEETS PRODUCTIVITY

EUROPEAN 3D TSV SUMMIT 22-23.1.2013 GRENOBLE

HANNES KOSTNER

DIRECTOR R&D BESI AUSTRIA

OVERVIEW

• Flip Chip Packaging Evolution

• The ‘Simple’ World of C4

• New Flip Chip Demands

• TCB Requirements for TSV Chip Stacking

• TCB Bonder Development

• Architectural considerations

• Innovation & Implementation

• Status and Outlook

• TCB Productivity

• Evaluations

FLIP CHIP PACKAGING EVOLUTION THE ‘SIMPLE’ WORLD OF C4

FLIP CHIP PACKAGING EVOLUTION NEW FLIP CHIP DEMANDS

ultra low-k wide I/O

low mechanical strength

MARKET DRIVERS

copper pillar & thin die

3D & fine pitch

integration density power consumption performance

Interconnect Technology

gradient bonding

Thermo Compression Bonding

Applications

2D TC

3D TSV 2.5 & 3D

Panel

Strip

Singulated

(Boat)

Wafer

Side by Side

Stacked

2.5D TSV

TC

NCF

TC

CUF

TC

MUF

Technologies

TC

NCP

Upstream

Dispensing

Fluxing

C2S

C2C

C2W

Multi Chip

Inert

In-Situ

Dispensing

TC

The world of TC

FLIP CHIP PACKAGING EVOLUTION NEW FLIP CHIP DEMANDS

Through Silicon Via‘s

Thin Die handling

Cu-Pillars & Stacking

2µm@10mm Co-Planarity

Fine Pitch

± 2µm Placement Accuracy

Insitu Soldering & Productivity Demands

200°C/s Heating & 100°C/s Cooling

I/O-Density & NCF

Bondforce ≤ 250N

FLIP CHIP PACKAGING EVOLUTION TCB REQUIREMENTS FOR TSV CHIP STACKING

Cu-Pillars & CUF

Bond Control

Core Capability #1

Accuracy

Co-

Planarity

Core Capability #2

Bond

Control

Core Capability #3

TCB

TCB

3 TCB Core Capabilities

are essential for yield!

FLIP CHIP PACKAGING EVOLUTION TCB REQUIREMENTS FOR TSV CHIP STACKING

TCB BONDER DEVELOPMENT ARCHITECTURAL CONSIDERATIONS

Rigid & Heavy Elastic & Lightweight

Accuracy Accurate Axis

Appropriate Alignment system

Thermal Drift Compensation

Accurate Axis

Appropriate Alignment system

Thermal Drift Compensation

Co-Planarity Rigid System Mechatronic Co-planarity

Control

Bond Control z-Stiffness Active z-Position Control

Productivity Limited by z-Stiffness & Weight

Fast Temp. Ramping

Lightweight Construction

Fast Temp. Ramping

Flexibility per footprint Architectural Limits Comparable to C4 FC Bonder

Tilt due to elastic gantry deformation

Kinematic Restraint System

Mechatronics Solution

with

Coplanarity control

TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION – CO-PLANARITY CONTROL

TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION – 250N BONDHEAD

Heater

Tool

Chip

Heater

Tool

Chip

Cooling fluid (e.g. air)

Active Gas cooling

TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION

Cooling ramp: -90°/sec

TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION

0

50

100

150

200

250

300

350

400

450

0 5 10 15 20

Tem

pera

tur

[°c

]

Time [s]

Temp P2[°C]

Temp P3[°C]

Temp P4[°C]

Temp P5[°C]

0 1 2 3 4 5 t [s]

Typical TC P&P cycle (TC process time: 4s)

6 7

Phase 1:

• Bond

(TC process)

Phase 2:

• Move to rel. adjust

• Rel. Adjust

• Move to Pick

• Wait

Phase 3:

• Pick

• Move to ULC

Phase 4:

• ULC

• Move to Bond

tool temperature

221 °C

260 °C

T [°C]

180 °C 160 °C

1 2 3 4

160 °C

max cooling:

-50 °C/s

max ramping:

+100 °C/s

5.6

REL ULC MOVE MOVE MOVE MOVE WAIT Bond (TC process)

PIC

K

*) without inspections

WAIT interval

can be used

for inspection

STATUS AND OUTLOOK TCB PRODUCTIVITY - ACTUAL

Phase 1:

• Bond

(TC process)

Phase 2:

• Move to rel. adjust

• Rel. Adjust

• Move to Pick

Phase 3:

• Pick

• Move to ULC

Phase 4:

• ULC

• Move to Bond

*) without

inspections

0 0.5 1 1.5 2 2.5 t [s]

tool temperature

221 °C

260 °C

T [°C]

160 °C

1 2 3 4

160 °C

max cooling:

-100 °C/s

max

ramping:

+200 °C/s

REL ULC MOVE MOVE Bond (TC process)

PIC

K

MOVE MOVE

2.5 s cyle time / b. head

based on +200/-100 °C/s

ramping

1400 UPH / bond head

Upside UPH: 2800 sprint UPH for machine

STATUS AND OUTLOOK TCB PRODUCTIVITY – UPSIDE POTENTIAL

STATUS AND OUTLOOK EVALUATIONS

• 1st TC-Bonder Buyoff was very successful with first time dual head/single

pass assembly of Multi Layer TSV stacks @ 50µ die thickness

• 2nd Evaluation is ongoing

• In total we talk to 27 companies. All are decided to utilize TCB technology

sooner or later

12 OSATs

9 IDMs

2 Foundries

2 Fabless

2 Research Institutes

1 Material Supplier

SUMMARY