Post on 05-Jan-2016
description
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
PXD Summary
Other talks in software, SVD and DAQ sessions
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
SOI Detectors
Yasuo Arai
*1st MPW: submission on 7th Aug. 2009
*2nd MPW: submission on end. Oct. 2010
*3rd MPW: submission on beg. Jan. 2010
*1st MPW: submission on 7th Aug. 2009
*2nd MPW: submission on end. Oct. 2010
*3rd MPW: submission on beg. Jan. 2010
We have received several contacts from foreign labs ;
India, UK, Spain, USA, Poland ...
We have received several contacts from foreign labs ;
India, UK, Spain, USA, Poland ...
This possibility has been announced by the facilitation group for monolithic and vertically integrated pixel detectors (Marcel Demarteau, Junji Haba, Hans-Günther Moser and Valerio Re). Thus collaborations for R&D should be initiated pushing progress for such detectors
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
SOI R&D at KEK
Laser test of SBPIX148x48 pixels of 50x50µm²
BPW
B (~1E12 cm-2)Without BPWWithout BPW With BPWWith BPW
Vback Up
New: buried p-well to reduce back gate effect:
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
DEPFET: Ringberg Workshop
http://indico.mppmu.mpg.de/indico/conferenceDisplay.py?confId=466
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
DEPFET-Collab. @ Belle-II
Original Collaboration: DEPFET pixel detector @ ILC (since 2002)now: Unite efforts to deliver a REAL PXD by 2013 for Belle-II
University of Barcelona, Spain University Ramon Llull, Barcelona, Spain Bonn University, Germany Heidelberg University, Germany Giessen University, GermanyGöttingen University, Germany Karlsruhe University, Germany IFJ PAN, Krakow, Poland MPI Munich, Germany Charles University, Prague, Czech Republic IGFAE, Santiago de Compostela University, Spain
IFIC, CSIC-UVEG, Valencia, Spain
with important help from Hawaii, KEK, Vienna
DEPFET@Belle-II
New management:
IB- Board
Project LeaderC. Kiesling
Technical Coord.H.-G. Moser
„Integration Coord.“(Liaison @ KEK)
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Funding
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Schedule
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Sensor Production Status
Status at 2nd Belle II meeting (March): SOI wafer bonding at Tracit, France
30 SOI wafers received, processing in our own lab has startedPresently: cleaning, oxygenation, alignment mask, first implantation: next week. Processed are 6 wafers + dummies
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Wafer layout
Small test matrices with various pixel sizes;50 µm x 50 µm..50 µm x 175 µm
Technology variations(gate length L)
4 ½ module large matrices with most likely pixel sizes
5cm: 50µm x 75µm5cm: 50µm x 100µm3.5cm 50µm x 50µm3.5cm 50µm x 75µm
Important for timing!
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
DEPFET Readout and Control ASICs
15mm
clear[n]gate[n]
clear[n+1]gate[n+1]
drain lines
cross section(height not to scale)
50µm
~75
µm
132
mm
DCD chips (analog)
DHP chips (digital)
Switcher chips (line driver)
flex cable
thinned active pixel area
98 m
m
DCD, Switcher: HeidelbergDHP: Bonn, Barcelona
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
DCD Tests
Works almost at design frequency (540 MHz: 88ns line rate)(works still at nominal 600 MHz, but with higher noise)Noise level: 90nA with 450 pA/e: 200 e ENC (S/N = 20:1)Some bugs discovered, improved version will be submittedPush DEPFET gain (600 pA/e ?)
Manuel Koch, Bonn
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Summary: ASICs»- DCD prototype chip has been tested with test signals that correspond to DEPFET
currents and irradiated up to 7 Mrad.
» The chip works fine and has high enough conversion speed.
» Operation with matrices still to be tested – we do not expect problems.
» Only „fine tuning“ of the design for the super KEKB operation is necessary.
»- Switcher prototype with LV transistors has been tested and irradiated up to 22 MRad.
» The chip works fine and has adequate speed for Belle II operation.
»- Another prototype with HV transistors has been designed and tested.
»- The irradiation of the chip still has to be done but the basic and most critical part (high-voltage NMOS) has been irradiated up to 600 KRad and no damage has been observed.
»- DHP chip will be designed using digital design tools in intrinsically radiation hard 90 nm technology.
»- Choice between 4 different bumping technologies – advantages and disadvantages still to be evaluated
»Planned submissions:
• Switcher: October 09
• DCD: September 09
• DHP: October 09
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Consequences of nano beam
Less background? Always welcome, but to be confirmed
Smaller beam pipe: 1.5cm -> 1.0cm
1cm beam pipe allows:
1st layer closer to the beam => better resolutionSmaller modules with smaller pitch (in z) => better resolution
Smaller modules: better use of wafer size:higher yieldless wafers needed?more space for electronics and cooling
More freedom to choose layer spacingoptimize resolutionimprove mechanical layout
(symmetric arrangement?)(more room for cooling/services?)
Major work needed to find optimum!Need final geometry of IR (and beam pipe outer radius) soon!
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Mechanics
Frank Simon:
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Mechanics
New simpler concept for supportMore space for services and air flowIntegrated cooling channelsSliding module mount (termal expansion)
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Cooling
Thomas Müller (work done in Karlsruhe and Valencia)
• DCDs always active: The hottest points• 2 Switchers active• 2 pixel stripes active
We need to cool down the
DCD
Power: ca 7W per module half6 W: ASIC on end1 W: sensor area
Total ~ 300 W
Needs both liquid and air cooling
Highly thermally conductive materials needed to get heat out of moduleUnder study: TPG (thermally pyrolythic graphite)CVD diamond
Work started, tooling to be set up (simulation, mock ups)
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Simulations
Kolja Prothman (work done in Munich and Prague)
Important tool for parameter optimisation (pitch, layer radius, pixel arrangments
Simulated is PXD with active and passive material
SVD
and CDC
Some examples
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Simulations
Variable pitch and bricking not usefull
Smaller pitch with longer readout time improves IP(z) resolution considerably
Performance better than Belle SVD
Most work done assuming 1.5 cm IR
Work on nano beam geometry started => should be even better
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Test Beam
SC 0: 2 5x25x4mmSC 1: 4 x4 x4m m
-12 5 0 79 21 3 40 8 55 1 63 1 72 2Po sit ion
[m m] :0 1 2 3 4 5Po sit ion :
Bea m
D epfe t2: M E, C C G, PXD 5, S9 0K02 , 0.0 32x0.0 24m m
D epfe t6: M E, C C G, PXD 5,S9 0I03 , 0.0 24x0.0 24m m
D epfe t14: ME, CC G, PXD 5, 9 0K02 , 0.0 32x0.0 24m m
D epfe t7: M E, C C G, PXD 5, 9 0I00 , 0.0 32x0.0 24m m
D epfe t5: M E, C C G, PXD 5, 1 4B, S9 0I00 , 0.0 32x0.0 24m m
D epfe t11: ME, SIMC , PXD 5, S9 0K00 , 0.0 32x0.0 24m m
Zdenek Dolezal for test beam group
6 plane telescope (incl. DUT)IL-like pixels (24 µm pitch)Thick silicon (450 µm)‘old’ readout & control ASICsLearn a lot about DEPFET operationTuning of operation parametersX-check and tuning of simulationNext test beam end of JulyBelle II type test beam in 2010
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Technical choices
Important: need to fix geometry: radius, module length, thicknesslatest possibility: September 2010 (prepare SOI material)Details on pitch can wait till March 2011Driven by sensor production schedule
However, engineering of support and cooling including prototypingshould start soon: need to fix parameters this year!
SuperKEKB3nd open meeting,
July 7-9. 2009
Hans-Günther MoserMPI für Physik
Parameter choices
Options like bricked pixels of variable pitch were abandoned in Ringberg(However: variable pitch may come back due to 1cm beam pipe?)
Major decision to take: 10µs or 20µs frame readout time?longer readout time allows smaller pixel, better resolutionslightly higher (but still tolerable) occupancyhigher readout bandwidth needed
20µs favoured in Ringberghave to study again for nano-beam
Some ideas to improve DCD readout speed (no DCS): not baseline
Important: Redundancy:Choose parameters (speed, pitch etc) not at the limit of the technology! Give some headroom in case some specs are not reached: e.g. T(line readout) x N(lines) < 10µs(e.g. use abort gap as ‘buffer’)