1

IPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

PG-TO220FP

DrainPin 2, Tab

GatePin 1

SourcePin 3

MOSFET600VCoolMOSªP7PowerTransistorTheCoolMOS™7thgenerationplatformisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.The600VCoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.ItcombinesthebenefitsofafastswitchingSJMOSFETwithexcellenteaseofuse,e.g.verylowringingtendency,outstandingrobustnessofbodydiodeagainsthardcommutationandexcellentESDcapability.Furthermore,extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompactandmuchcooler.

Features•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness•Significantreductionofswitchingandconductionlosses•ExcellentESDrobustness>2kV(HBM)forallproducts•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm²)•LargeportfoliowithgranularRDS(on)selectionqualifiedforavarietyof industrialandconsumergradeapplicationsaccordingtoJEDEC (J-STD20andJESD22)

Benefits•Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages•Simplifiedthermalmanagementduetolowswitchingandconduction losses•Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection•Suitableforawidevarietyofapplicationsandpowerranges

ApplicationsPFCstages,hardswitchingPWMstagesandresonantswitchingstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,TelecomandUPS.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V

RDS(on),max 60 mΩ

Qg.typ 67 nC

ID,pulse 151 A

Eoss@400V 7.1 µJ

Body diode di/dt 900 A/µs

Type/OrderingCode Package Marking RelatedLinksIPA60R060P7 PG-TO 220 FullPAK 60R060P7 see Appendix A

2

600VCoolMOSªP7PowerTransistorIPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3

600VCoolMOSªP7PowerTransistorIPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

4830 A TC=25°C

TC=100°C

Pulsed drain current2) ID,pulse - - 151 A TC=25°C

Avalanche energy, single pulse EAS - - 159 mJ ID=6.4A; VDD=50V; see table 10

Avalanche energy, repetitive EAR - - 0.80 mJ ID=6.4A; VDD=50V; see table 10

Avalanche current, single pulse IAS - - 6.4 A -

MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400VGate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation Ptot - - 29 W TC=25°CStorage temperature Tstg -55 - 150 °C -

Operating junction temperature Tj -55 - 150 °C -

Mounting torque - - - 50 Ncm M2.5 screws

Continuous diode forward current IS - - 48 A TC=25°CDiode pulse current2) IS,pulse - - 151 A TC=25°C

Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=48A,Tj=25°C see table 8

Maximum diode commutation speed dif/dt - - 900 A/µs VDS=0...400V,ISD<=48A,Tj=25°C see table 8

Insulation withstand voltage VISO - - 2500 V Vrms,TC=25°C,t=1min

1) Limited by Tj max. Maximum Duty Cycle D = 0.50; TO-220 equivalent2) Pulse width tp limited by Tj,max3) Identical low side and high side switch with identical Rg

4

600VCoolMOSªP7PowerTransistorIPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

2Thermalcharacteristics

Table3ThermalcharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Thermal resistance, junction - case RthJC - - 4.24 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded

Thermal resistance, junction - ambientfor SMD version RthJA - - - °C/W -

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

5

600VCoolMOSªP7PowerTransistorIPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.8mA

Zero gate voltage drain current IDSS --

-10

1- µA VDS=600,VGS=0V,Tj=25°C

VDS=600,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.0490.115

0.060- Ω VGS=10V,ID=15.9A,Tj=25°C

VGS=10V,ID=15.9A,Tj=150°C

Gate resistance RG - 2.8 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Input capacitance Ciss - 2895 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 48 - pF VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energyrelated1) Co(er) - 89 - pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated2) Co(tr) - 926 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 23 - ns VDD=400V,VGS=13V,ID=15.9A,RG=3.3Ω;seetable9

Rise time tr - 12 - ns VDD=400V,VGS=13V,ID=15.9A,RG=3.3Ω;seetable9

Turn-off delay time td(off) - 79 - ns VDD=400V,VGS=13V,ID=15.9A,RG=3.3Ω;seetable9

Fall time tf - 4 - ns VDD=400V,VGS=13V,ID=15.9A,RG=3.3Ω;seetable9

Table6GatechargecharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Gate to source charge Qgs - 15 - nC VDD=400V,ID=15.9A,VGS=0to10VGate to drain charge Qgd - 20 - nC VDD=400V,ID=15.9A,VGS=0to10VGate charge total Qg - 67 - nC VDD=400V,ID=15.9A,VGS=0to10VGate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=15.9A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

6

600VCoolMOSªP7PowerTransistorIPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

Table7ReversediodecharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Diode forward voltage VSD - 0.9 - V VGS=0V,IF=15.9A,Tj=25°C

Reverse recovery time trr - 254 - ns VR=400V,IF=6A,diF/dt=100A/µs;see table 8

Reverse recovery charge Qrr - 2.9 - µC VR=400V,IF=6A,diF/dt=100A/µs;see table 8

Peak reverse recovery current Irrm - 23.1 - A VR=400V,IF=6A,diF/dt=100A/µs;see table 8

7

600VCoolMOSªP7PowerTransistorIPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

5

10

15

20

25

30

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-5

10-4

10-3

10-2

10-1

100

101

102

103

10 ms

DC

1 ms

100 µs

10 µs

1 µs

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-5

10-4

10-3

10-2

10-1

100

101

102

103

DC

10 ms

1 ms

100 µs

10 µs

1 µs

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 100 10110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

8

600VCoolMOSªP7PowerTransistorIPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

40

80

120

160

20020 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

20

40

60

80

100

12020 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 15 30 45 60 75 90 105 1200.100

0.130

0.160

0.190

0.220

0.250

20 V

7 V

10 V

6.5 V

6 V

5.5 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [no

rmalized]

-50 -25 0 25 50 75 100 125 1500.000

0.500

1.000

1.500

2.000

2.500

3.000

RDS(on)=f(Tj);ID=15.9A;VGS=10V

9

600VCoolMOSªP7PowerTransistorIPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

50

100

150

200

150 °C

25 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 15 30 45 60 750

2

4

6

8

10

120 V400 V

VGS=f(Qgate);ID=15.9Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.810-1

100

101

102

103

125 °C 25 °C

IF=f(VSD);parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

50

100

150

200

EAS=f(Tj);ID=6.4A;VDD=50V

10

600VCoolMOSªP7PowerTransistorIPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-50 -25 0 25 50 75 100 125 150540

550

560

570

580

590

600

610

620

630

640

650

660

670

680

690

VBR(DSS)=f(Tj);ID=1mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 500100

101

102

103

104

105

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 5000

5

10

Eoss=f(VDS)

11

600VCoolMOSªP7PowerTransistorIPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

5TestCircuits

Table8Diodecharacteristics

Test circuit for diode characteristics Diode recovery waveform

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

12

600VCoolMOSªP7PowerTransistorIPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

6PackageOutlines

DIMENSIONS

MIN. MAX.

A2

H

b

D

c

b2

E

e

L

Q

øP

L1

D1

A

A1

2.862.42

2.54

28.70

0.95

15.67

0.40

0.65

10.00

2.83

3.15

3.00

12.78

8.97

29.75

0.90

0.63

1.51

16.15

3.50

3.30

3.45

13.75

10.65

9.83

MILLIMETERS

4.50

2.34

4.90

2.85

b1 0.95 1.38

b4 0.65 1.51

b3 0.65 1.38

1

SCALE

Z8B00003319

REVISION

ISSUE DATE

EUROPEAN PROJECTION

07

27.01.2017

0 5mm

DOCUMENT NO.

5:1

2 3 4

1 2 3

Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches

13

600VCoolMOSªP7PowerTransistorIPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

7AppendixA

Table11RelatedLinks

• IFXCoolMOSP7Webpage:www.infineon.com

• IFXCoolMOSP7applicationnote:www.infineon.com

• IFXCoolMOSP7simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

14

600VCoolMOSªP7PowerTransistorIPA60R060P7

Rev.2.0,2017-05-18Final Data Sheet

RevisionHistoryIPA60R060P7

Revision:2017-05-18,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2017-05-18 Release of final version

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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