Post on 07-Mar-2021
Mega Power Dual IGBT 1000 Amperes/1700 Volts
CM1000DUC-34SA
103/13 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Outline Drawing and Circuit Diagram
Description:Powerex Mega Power Dual (MPD) Modules are designed for use in switching applications. Each module consists of two IGBT Transistors having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:£ Low Drive Power£ Low VCE(sat)£ Discrete Super-Fast Recovery
Free-Wheel Diode£ Isolated Baseplate for Easy
Heatsinking£ RoHS Compliant
Applications:£ High Power DC Power Supply£ Large DC Motor Drives£ Utility Interface Inverters
Ordering Information:Example: Select the complete module number you desire from the table - i.e. CM1000DUC-34SA is a 1700V (VCES), 1000 Ampere Dual IGBTMOD Power Module.
Current Rating VCES Type Amperes Volts (x 50)
CM 1000 34
Dimensions Inches Millimeters
M 0.075±0.008 1.9±0.2
N 0.47 12.0
P 0.26 6.5
R M6 Metric M6
S 0.08 2.0
T 0.99 25.1
U 0.62 15.7
V 0.71 18.0
W 0.75 19.0
X 0.43 11.0
Y 0.83 21.0
Z 0.41 10.5
AA 0.22 5.5
Dimensions Inches Millimeters
A 5.91 150.0
B 5.10 129.5
C 1.67±0.01 42.5±0.25
D 5.41±0.01 137.5±0.25
E 6.54 166.0
F 2.91±0.01 74.0±0.25
G 1.65 42.0
H 0.55 14.0
J 1.50±0.01 38.0±0.25
K 0.16 4.0
L 1.36 +0.04/-0.02 34.6 +1.0/-0.5
Housing Type (J.S.T. MFG. CO. LTD) BB = VHR-2N CC = VHR-5N
C2E1
E2
G2
E2 (Es2)
E1 (Es1)
C1 (Cs1)C2 (Cs2)
G1
Tr2
Di2 Di1
C1
Tr1
Tolerance Otherwise Specified (mm)Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2
ADP
(8 PLACES) L
LMH H HHH H
KG
U H H
E
F
F
E2
C2
C2E1
C1
G2 E1
E2 G1
C1
V
BB
CC
BC
J
J
G GR (9 PLACES)
LABEL
U
W
SN
X
YZ
AA
T
CM1000DUC-34SAMega Power Dual IGBT1000 Amperes/1700 Volts
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
03/13 Rev. 3
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts
Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts
Collector Current (DC, TC = 125°C)*2,*4 IC 1000 Amperes
Collector Current (Pulse, Repetitive)*3 ICRM 2000 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot 10,000 Watts
Emitter Current*2 IE*1 1000 Amperes
Emitter Current (Pulse, Repetitive)*3 IERM*1 2000 Amperes
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) Visol 4000 Volts
Maximum Junction Temperature Tj(max) 175 °C
Maximum Case Temperature TC (max) 125 °C
Operating Junction Temperature Tj(op) -40 to +150 °C
Storage Temperature Tstg -40 to +125 °C *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.*3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips.
51.7
0
Tr1, Tr2: IGBT, Di1, Di2: FWDiEach mark points to the center position of each chip.
0 38.2
51.0
98.9
111.
8
Tr2
77.8
64.7
93.2
119.3
106.2
Di2 Tr1Di1
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
23.2
36.3
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
10.2 Tr2 Di2 Tr1Di1
LABEL SIDE
CM1000DUC-34SAMega Power Dual IGBT1000 Amperes/1700 Volts
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
03/13 Rev. 3
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 10 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 100mA, VCE = 10V 5.4 6.0 6.6 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 1000A, VGE = 15V, Tj = 25°C*5 — 1.9 2.4 Volts
(Terminal = Chip) IC = 1000A, VGE = 15V, Tj = 125°C*5 — 2.1 — Volts
IC = 1000A, VGE = 15V, Tj = 150°C*5 — 2.15 — Volts
Input Capacitance Cies — — 260 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 27 nF
Reverse Transfer Capacitance Cres — — 5 nF
Gate Charge QG VCC = 1000V, IC = 1000A, VGE = 15V — 4700 — nC
Turn-on Delay Time td(on) — — 900 ns
Rise Time tr VCC = 1000V, IC = 1000A, VGE = ±15V, — — 350 ns
Turn-off Delay Time td(off) RG = 2.0Ω, Inductive Load — — 1250 ns
Fall Time tf — — 400 ns
Emitter-Collector Voltage VEC*1 IE = 1000A, VGE = 0V, Tj = 25°C*5 — 4.0 5.2 Volts
(Terminal = Chip) IE = 1000A, VGE = 0V, Tj = 125°C*5 — 2.8 — Volts
IE = 1000A, VGE = 0V, Tj = 150°C*5 — 2.6 — Volts
Reverse Recovery Time trr*1 VCC = 1000V, IE = 900A, VGE = ±15V — — 400 ns
Reverse Recovery Charge Qrr*1 RG = 2.0Ω, Inductive Load — 270 — µC
Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 1000A, — 239 — mJ
Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 2.0Ω, Tj = 150°C, — 269 — mJ
Reverse Recovery Energy per Pulse Err*1 Inductive Load — 130 — mJ
Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — 0.286 — mΩ
Per Switch,TC = 25°C*4
Internal Gate Resistance rg Per Switch — 0.56 — Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips.*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
51.7
0
Tr1, Tr2: IGBT, Di1, Di2: FWDiEach mark points to the center position of each chip.
0 38.2
51.0
98.9
111.
8
Tr2
77.8
64.7
93.2
119.3
106.2
Di2 Tr1Di1
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
23.2
36.3
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
10.2 Tr2 Di2 Tr1Di1
LABEL SIDE
CM1000DUC-34SAMega Power Dual IGBT1000 Amperes/1700 Volts
4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
03/13 Rev. 3
Electrical Characteristics, Tj = 25°C unless otherwise specified (continued)
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per IGBT — — 15 K/kW
Thermal Resistance, Junction to Case*4 Rth(j-c)D Per Diode — — 24 K/kW
Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied — 6 — K/kW
Case to Heatsink (Per 1 Module)*6
Mechanical Characteristics
Mounting Torque Mt Main Terminals, M6 Screw 22 27 31 in-lb
Ms Mounting to Heatsink, M6 Screw 22 27 31 in-lb
Creepage Distance ds Terminal to Terminal 24 — — mm
Terminal to Baseplate 33 — — mm
Clearance da Terminal to Terminal 14 — — mm
Terminal to Baseplate 33 — — mm
Weight m — 1450 — Grams
Flatness of Baseplate ec On Centerline X, Y*7 -50 — +100 µm
Recommended Operating Conditons, Ta = 25°C
(DC) Supply Voltage VCC Applied Across C1-E2 — 1000 1200 Volts
Gate-Emitter Drive Voltage VGE(on) Applied Across G1-Es1/G2-Es2 13.5 15.0 16.5 Volts
External Gate Resistance RG Per Switch 2.0 — 6.0 Ω
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips.*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].*7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
X
BOTTOM
– CONCAVE
+ CONVEX
– C
ON
CA
VE
+ C
ON
VE
X
BOTTOM
BOTTOM
LABEL SIDE
Y1
39 mm 39 mm
Y2
51.7
0
Tr1, Tr2: IGBT, Di1, Di2: FWDiEach mark points to the center position of each chip.
0 38.2
51.0
98.9
111.
8
Tr2
77.8
64.7
93.2
119.3
106.2
Di2 Tr1Di1
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
23.2
36.3
Tr2 Di2 Tr1Di1
Tr2 Di2 Tr1Di1
10.2 Tr2 Di2 Tr1Di1
LABEL SIDE
CM1000DUC-34SAMega Power Dual IGBT1000 Amperes/1700 Volts
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
03/13 Rev. 3
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CA
PA
CIT
AN
CE
, Cie
s, C
oes,
Cre
s, (
nF)
CAPACITANCE VS. VCE(TYPICAL)
100 102
103
102
101
10-1
100
1010 21 53 4 6101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODEFORWARD CHARACTERISTICS
(CHIP - TYPICAL)
102
103
104
EM
ITT
ER
CU
RR
EN
T, I
E, (
AM
PE
RE
S)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
CO
LLE
CT
OR
-EM
ITT
ER
SA
TU
RA
TIO
N V
OLT
AG
E, V
CE
(sat
), (
VO
LTS
)
COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
10
6 8 10 1412 16 18 20
8
6
4
2
0
Tj = 25°C
VGE = 0VTj = 25°C
Cies
Coes
Cres
IC = 2000A
IC = 1000A
IC = 600A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CO
LLE
CT
OR
CU
RR
EN
T, I
C, (
AM
PE
RE
S)
OUTPUT CHARACTERISTICS(CHIP - TYPICAL)
0 2 4 6 8 100
VGE = 20V
10
11
1213.515
9
Tj = 25°C2000
500
1000
1500
COLLECTOR CURRENT, IC, (AMPERES)
CO
LLE
CT
OR
-EM
ITT
ER
SA
TU
RA
TIO
N V
OLT
AG
E, V
CE
(sat
), (V
OLT
S)
COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
4.5
4.0
2.5
3.0
3.5
0
2.0
1.5
0.5
1.0
020001500500 1000
VGE = 15VTj = 25°CTj = 125°CTj = 150°C
10-1
COLLECTOR CURRENT, IC, (AMPERES)
104
101 102
103
100
101
102
SW
ITC
HIN
G T
IME
, (ns
)
HALF-BRIDGESWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 1000VVGE = ±15VRG = 2.0ΩTj = 125°CInductive Load
tf
103
COLLECTOR CURRENT, IC, (AMPERES)
104
101 102
103
100
101
102
SW
ITC
HIN
G T
IME
, (ns
)
HALF-BRIDGESWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 1000VVGE = ±15VRG = 2.0ΩTj = 150°CInductive Load
tf
103
EXTERNAL GATE RESISTANCE, RG, (Ω)
104
10010-1101
SW
ITC
HIN
G T
IME
, (ns
)
SWITCHING TIME VS.GATE RESISTANCE
(TYPICAL)
td(on)
tr
VCC = 1000VVGE = ±15VIC = 1000ATj = 125°CInductive Load
tf
101
EXTERNAL GATE RESISTANCE, RG, (Ω)
104
103
103
100
102
102
SW
ITC
HIN
G T
IME
, (ns
)
SWITCHING TIME VS.GATE RESISTANCE
(TYPICAL)
101
VGE = 15VTj = 25°CTj = 125°CTj = 150°C
td(on)
tr
VCC = 1000VVGE = ±15VIC = 1000ATj = 150°CInductive Load
tf
td(off)td(off)
CM1000DUC-34SAMega Power Dual IGBT1000 Amperes/1700 Volts
6
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
03/13 Rev. 3
TIME, (s)
TRANSIENT THERMALIMPEDANCE CHARACTERISTICS
(MAXIMUM)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100 101
10-1
10-2
10-3
Zth
= R
th •
(N
OR
MA
LIZ
ED
VA
LUE
)
Single PulseTC = 25°CPer Unit Base = Rth(j-c) = 15 K/kW (IGBT)Rth(j-c) = 24 K/kW (FWDi)
NO
RM
ALI
ZE
D T
RA
NS
IEN
T T
HE
RM
AL
IMP
ED
AN
CE
, Zth
(j-c'
)
GATE CHARGE, QG, (nC)
GA
TE
-EM
ITT
ER
VO
LTA
GE
, VG
E, (
VO
LTS
)
GATE CHARGE VS. VGE
20
0
15
10
5
060002000 80004000
IC = 1000AVCC = 1000VTj = 25°C
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS(TYPICAL)
103
101 102101
103
VCC = 1000VVGE = ±15VRG = 2.0ΩTj = 125°CInductive Load
Irrtrr
RE
VE
RS
E R
EC
OV
ER
Y, I
rr (
A),
t rr (
ns)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS(TYPICAL)
103
101 102101
102 102
103
VCC = 1000VVGE = ±15VRG = 2.0ΩTj = 150°CInductive Load
Irrtrr
RE
VE
RS
E R
EC
OV
ER
Y, I
rr (
A),
t rr (
ns)
GATE RESISTANCE, RG, (Ω)
SW
ITC
HIN
G E
NE
RG
Y, E
on, E
off,
(mJ)
RE
VE
RS
E R
EC
IVE
RY
EN
ER
GY
, Err, (
mJ)
103
102
10-1 100 101101
HALF-BRIDGE SWITCHINGCHARACTERISTICS (TYPICAL)
VCC = 1000VVGE = ±15VRG = 2.0ΩTj = 125°C
VCC = 1000VVGE = ±15VIC/IE = 1000ATj = 125°C
COLLECTOR CURRENT, IC, (AMPERES)EMITTER CURRENT, IE, (AMPERES)
SW
ITC
HIN
G E
NE
RG
Y, E
on, E
off,
(mJ)
RE
VE
RS
E R
EC
IVE
RY
EN
ER
GY
, Err, (
mJ)
103
102
101
HALF-BRIDGE SWITCHINGCHARACTERISTICS (TYPICAL)
EonEoffErr
GATE RESISTANCE, RG, (Ω)
SW
ITC
HIN
G E
NE
RG
Y, E
on, E
off,
(mJ)
RE
VE
RS
E R
EC
IVE
RY
EN
ER
GY
, Err, (
mJ)
103
102
10-1 100 101101
VCC = 1000VVGE = ±15VIC/IE = 1000ATj = 150°C
EonEoffErr
EonEoffErr
101 102 103
VCC = 1000VVGE = ±15VRG = 2.0ΩTj = 150°C
COLLECTOR CURRENT, IC, (AMPERES)EMITTER CURRENT, IE, (AMPERES)
SW
ITC
HIN
G E
NE
RG
Y, E
on, E
off,
(mJ)
RE
VE
RS
E R
EC
IVE
RY
EN
ER
GY
, Err, (
mJ)
103
102
101
HALF-BRIDGE SWITCHINGCHARACTERISTICS (TYPICAL)
EonEoffErr
101 102 103