Plastic Medium Power Silicon

NPN Transistor

. . . designed for use in 5.0 to 10 Watt audio amplifiers and driversutilizing complementary or quasi complementary circuits. DC Current Gain

hFE = 40 (Min) @ IC = 0.15 Adc

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

CollectorEmitter Voltage

VCEO

80

Vdc

CollectorBase Voltage

VCBO

100

Vdc

EmitterBase Voltage

VEBO

5.0

Vdc

Collector Current

IC

2.0

Adc

Base Current

IB

1.0

Adc

Total Device Dissipation @ TC = 25C

PD

25

Watts

Operating and Storage JunctionTemperature Range

TJ, Tstg

55 to +150

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

JC

5.0

C/W

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

CollectorEmitter Sustaining Voltage*(IC = 0.1 Adc, IB = 0)

V(BR)CEO

80

Vdc

Collector Cutoff Current(VCB = 100 Vdc, IE = 0)

ICBO

0.1

mAdc

Emitter Cutoff Current(VBE = 5.0 Vdc, IC = 0)

IEBO

1.0

mAdc

DC Current Gain(IC = 0.15 A, VCE = 2.0 V)(IC = 1.0 A, VCE = 2.0 V)

hFE1hFE2

4025

CollectorEmitter Saturation Voltage*(IC = 1.0 Adc, IB = 0.1 Adc)

VCE(sat)

0.6

Vdc

BaseEmitter On Voltage*(IC = 1.0 Adc, VCE = 2.0 Vdc)

VBE(on)

1.3

Vdc

CurrentGain Bandwidth Product(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

fT

3.0

MHz

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

ON Semiconductor

Semiconductor Components Industries, LLC, 2002April, 2002 Rev. 11

1 Publication Order Number:BD237/D

BD237

2.0 AMPERESPOWER TRANSISTORS

NPN SILICON80 VOLTS25 WATTS

CASE 7709TO225AA TYPE

*ON Semiconductor Preferred Device

PNP

NPN

BD238

3 2 1

STYLE 1:PIN 1. EMITTER

2. COLLECTOR3. BASE

This datasheet has been downloaded from http://www.digchip.com at this page

BD238

http://onsemi.com2

Figure 1. Active Region Safe Operating Area

10

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

3

1

0.13 10 30 100

0.3

I C, C

OLL

EC

TOR

CU

RR

EN

T (A

MP

)

TJ = 150C dc

5 ms

1

100 s

1 ms

BD237

BD236

The Safe Operating Area Curves indicate IC VCE limitsbelow which the device will not enter secondary breakdown.Collector load lines for specific circuits must fall within theapplicable Safe Area to avoid causing a catastrophic failure.To insure operation below the maximum TJ,powertemperature derating must be observed for bothsteady state and pulse power conditions.

VC

E, C

OLL

EC

TOR

-EM

ITT

ER

VO

LTA

GE

(V

OLT

S)

Figure 2. Collector Saturation RegionIB, BASE CURRENT (mA)

1.0

00.2

0.8

0.6

0.4

0.2

1.0 2.0 10 30 50 200

IC = 0.1 A 0.25 A 1.0 A0.5 A

0.3 0.5 100203.0 5.0

TJ = 25C

1000

Figure 3. Current GainIC, COLLECTOR CURRENT (mA)

10

100TJ = + 150C

TJ = + 55C

VCE = 2.0 V

hF

E, D

C C

UR

RE

NT

GA

IN (

NO

RM

ALI

ZE

D)

700

500

300

200

70

50

30

20

TJ = + 25C

3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500

Figure 4. On Voltages

0

1.5

3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500

1.2

0.9

0.6

0.3

IC, COLLECTOR CURRENT (mA)

TJ = 25C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VO

LTA

GE

(V

OLT

S)

VBE @ VCE = 2.0 V

BD238

http://onsemi.com3

Figure 5. Thermal Responset, TIME or PULSE WIDTH (ms)

1.0

0.010.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t)

, NO

RM

ALI

ZE

D E

FF

EC

TIV

E T

RA

NS

IEN

T

TH

ER

MA

L R

ES

ISTA

NC

E

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500

JC(t) = r(t) JCJC = 4.16C/W MAXJC = 3.5C/W TYPD CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1TJ(pk) - TC = P(pk) JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

D = 0.2

D = 0.1

D = 0.05

D = 0.01

BD238

http://onsemi.com4

PACKAGE DIMENSIONS

CASE 7709ISSUE W

TO225AA

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.

B

AM

K

F CQ

H

VGS

D

JR

U

1 32

2 PL

MAM0.25 (0.010) B M

MAM0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.425 0.435 10.80 11.04

B 0.295 0.305 7.50 7.74

C 0.095 0.105 2.42 2.66

D 0.020 0.026 0.51 0.66

F 0.115 0.130 2.93 3.30

G 0.094 BSC 2.39 BSC

H 0.050 0.095 1.27 2.41

J 0.015 0.025 0.39 0.63

K 0.575 0.655 14.61 16.63

M 5 TYP 5 TYP

Q 0.148 0.158 3.76 4.01

R 0.045 0.065 1.15 1.65

S 0.025 0.035 0.64 0.88

U 0.145 0.155 3.69 3.93

V 0.040 --- 1.02 ---

STYLE 1:PIN 1. EMITTER

2. COLLECTOR3. BASE

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to makechanges without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for anyparticular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must bevalidated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or deathmay occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLCand its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney feesarising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges thatSCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

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BD238/D

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