BD237.pdf

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Plastic Medium Power Silicon NPN Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain — h FE = 40 (Min) @ I C = 0.15 Adc MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 80 Vdc Collector–Base Voltage V CBO 100 Vdc Emitter–Base Voltage V EBO 5.0 Vdc Collector Current I C 2.0 Adc Base Current I B 1.0 Adc Total Device Dissipation @ T C = 25_C P D 25 Watts Operating and Storage Junction Temperature Range T J , T stg –55 to +150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case θ JC 5.0 _C/W ELECTRICAL CHARACTERISTICS (T C = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Sustaining Voltage* (I C = 0.1 Adc, I B = 0) V (BR)CEO 80 Vdc Collector Cutoff Current (V CB = 100 Vdc, I E = 0) I CBO 0.1 mAdc Emitter Cutoff Current (V BE = 5.0 Vdc, I C = 0) I EBO 1.0 mAdc DC Current Gain (I C = 0.15 A, V CE = 2.0 V) (I C = 1.0 A, V CE = 2.0 V) h FE1 h FE2 40 25 Collector–Emitter Saturation Voltage* (I C = 1.0 Adc, I B = 0.1 Adc) V CE(sat) 0.6 Vdc Base–Emitter On Voltage* (I C = 1.0 Adc, V CE = 2.0 Vdc) V BE(on) 1.3 Vdc Current–Gain — Bandwidth Product (I C = 250 mAdc, V CE = 10 Vdc, f = 1.0 MHz) f T 3.0 MHz *Pulse Test: Pulse Width x 300 μs, Duty Cycle x 2.0%. ON Semiconductor ) Semiconductor Components Industries, LLC, 2002 April, 2002 – Rev. 11 1 Publication Order Number: BD237/D BD237 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS CASE 77–09 TO–225AA TYPE *ON Semiconductor Preferred Device PNP NPN BD238 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE This datasheet has been downloaded from http://www.digchip.com at this page

Transcript of BD237.pdf

  • Plastic Medium Power Silicon

    NPN Transistor

    . . . designed for use in 5.0 to 10 Watt audio amplifiers and driversutilizing complementary or quasi complementary circuits. DC Current Gain

    hFE = 40 (Min) @ IC = 0.15 Adc

    MAXIMUM RATINGS

    Rating

    Symbol

    Value

    Unit

    CollectorEmitter Voltage

    VCEO

    80

    Vdc

    CollectorBase Voltage

    VCBO

    100

    Vdc

    EmitterBase Voltage

    VEBO

    5.0

    Vdc

    Collector Current

    IC

    2.0

    Adc

    Base Current

    IB

    1.0

    Adc

    Total Device Dissipation @ TC = 25C

    PD

    25

    Watts

    Operating and Storage JunctionTemperature Range

    TJ, Tstg

    55 to +150

    C

    THERMAL CHARACTERISTICS

    Characteristic

    Symbol

    Max

    Unit

    Thermal Resistance, Junction to Case

    JC

    5.0

    C/W

    ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

    Characteristic

    Symbol

    Min

    Max

    Unit

    CollectorEmitter Sustaining Voltage*(IC = 0.1 Adc, IB = 0)

    V(BR)CEO

    80

    Vdc

    Collector Cutoff Current(VCB = 100 Vdc, IE = 0)

    ICBO

    0.1

    mAdc

    Emitter Cutoff Current(VBE = 5.0 Vdc, IC = 0)

    IEBO

    1.0

    mAdc

    DC Current Gain(IC = 0.15 A, VCE = 2.0 V)(IC = 1.0 A, VCE = 2.0 V)

    hFE1hFE2

    4025

    CollectorEmitter Saturation Voltage*(IC = 1.0 Adc, IB = 0.1 Adc)

    VCE(sat)

    0.6

    Vdc

    BaseEmitter On Voltage*(IC = 1.0 Adc, VCE = 2.0 Vdc)

    VBE(on)

    1.3

    Vdc

    CurrentGain Bandwidth Product(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

    fT

    3.0

    MHz

    *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

    ON Semiconductor

    Semiconductor Components Industries, LLC, 2002April, 2002 Rev. 11

    1 Publication Order Number:BD237/D

    BD237

    2.0 AMPERESPOWER TRANSISTORS

    NPN SILICON80 VOLTS25 WATTS

    CASE 7709TO225AA TYPE

    *ON Semiconductor Preferred Device

    PNP

    NPN

    BD238

    3 2 1

    STYLE 1:PIN 1. EMITTER

    2. COLLECTOR3. BASE

    This datasheet has been downloaded from http://www.digchip.com at this page

  • BD238

    http://onsemi.com2

    Figure 1. Active Region Safe Operating Area

    10

    VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

    3

    1

    0.13 10 30 100

    0.3

    I C, C

    OLL

    EC

    TOR

    CU

    RR

    EN

    T (A

    MP

    )

    TJ = 150C dc

    5 ms

    1

    100 s

    1 ms

    BD237

    BD236

    The Safe Operating Area Curves indicate IC VCE limitsbelow which the device will not enter secondary breakdown.Collector load lines for specific circuits must fall within theapplicable Safe Area to avoid causing a catastrophic failure.To insure operation below the maximum TJ,powertemperature derating must be observed for bothsteady state and pulse power conditions.

    VC

    E, C

    OLL

    EC

    TOR

    -EM

    ITT

    ER

    VO

    LTA

    GE

    (V

    OLT

    S)

    Figure 2. Collector Saturation RegionIB, BASE CURRENT (mA)

    1.0

    00.2

    0.8

    0.6

    0.4

    0.2

    1.0 2.0 10 30 50 200

    IC = 0.1 A 0.25 A 1.0 A0.5 A

    0.3 0.5 100203.0 5.0

    TJ = 25C

    1000

    Figure 3. Current GainIC, COLLECTOR CURRENT (mA)

    10

    100TJ = + 150C

    TJ = + 55C

    VCE = 2.0 V

    hF

    E, D

    C C

    UR

    RE

    NT

    GA

    IN (

    NO

    RM

    ALI

    ZE

    D)

    700

    500

    300

    200

    70

    50

    30

    20

    TJ = + 25C

    3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500

    Figure 4. On Voltages

    0

    1.5

    3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500

    1.2

    0.9

    0.6

    0.3

    IC, COLLECTOR CURRENT (mA)

    TJ = 25C

    VBE(sat) @ IC/IB = 10

    VCE(sat) @ IC/IB = 10

    VO

    LTA

    GE

    (V

    OLT

    S)

    VBE @ VCE = 2.0 V

  • BD238

    http://onsemi.com3

    Figure 5. Thermal Responset, TIME or PULSE WIDTH (ms)

    1.0

    0.010.01

    0.7

    0.5

    0.3

    0.2

    0.1

    0.07

    0.05

    0.03

    0.02

    0.02 0.03

    r(t)

    , NO

    RM

    ALI

    ZE

    D E

    FF

    EC

    TIV

    E T

    RA

    NS

    IEN

    T

    TH

    ER

    MA

    L R

    ES

    ISTA

    NC

    E

    0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500

    JC(t) = r(t) JCJC = 4.16C/W MAXJC = 3.5C/W TYPD CURVES APPLY FOR POWER

    PULSE TRAIN SHOWN

    READ TIME AT t1TJ(pk) - TC = P(pk) JC(t)

    P(pk)

    t1t2

    DUTY CYCLE, D = t1/t2

    D = 0.5

    SINGLE PULSE

    D = 0.2

    D = 0.1

    D = 0.05

    D = 0.01

  • BD238

    http://onsemi.com4

    PACKAGE DIMENSIONS

    CASE 7709ISSUE W

    TO225AA

    NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

    Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.

    B

    AM

    K

    F CQ

    H

    VGS

    D

    JR

    U

    1 32

    2 PL

    MAM0.25 (0.010) B M

    MAM0.25 (0.010) B M

    DIM MIN MAX MIN MAX

    MILLIMETERSINCHES

    A 0.425 0.435 10.80 11.04

    B 0.295 0.305 7.50 7.74

    C 0.095 0.105 2.42 2.66

    D 0.020 0.026 0.51 0.66

    F 0.115 0.130 2.93 3.30

    G 0.094 BSC 2.39 BSC

    H 0.050 0.095 1.27 2.41

    J 0.015 0.025 0.39 0.63

    K 0.575 0.655 14.61 16.63

    M 5 TYP 5 TYP

    Q 0.148 0.158 3.76 4.01

    R 0.045 0.065 1.15 1.65

    S 0.025 0.035 0.64 0.88

    U 0.145 0.155 3.69 3.93

    V 0.040 --- 1.02 ---

    STYLE 1:PIN 1. EMITTER

    2. COLLECTOR3. BASE

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    BD238/D

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