IC Processing. Initial Steps: Forming an active region Si 3 N 4 is etched away using an F-plasma: Si3dN4 + 12F → 3SiF 4 + 2N 2 Or removed in hot.
Hydrogen sensor application of Pd doped anodic TiO 2 film
Key points: TG in optical range has been used to study coherent phonons and thermal transport
