Extending the Internet Throughout the Physical World Briefing to Ericsson Headquarters Stockholm, Sweden June 8, 2001.
Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS Tod Dickson University of Toronto June 9, 2005.
Submicron InP Bipolar Transistors: Scaling Laws, Technology Roadmaps, Advanced Fabrication Processes Mark Rodwell University of California, Santa Barbara.
Slide 1 of 34 ESA AMICSA 2006 Mixed-Signal ASIC Design for Space Communications Presented by Dr. Rajan Bedi.
Seville, Spain, November, 2014 1 NON TRADITIONAL TEACHING STRATEGIES TO IMPROVE LEARNING PROCESS OF POST-GRADUATE MEXICAN STUDENTS Eloy RAMÍREZ GARCÍA,
Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond Mark Rodwell University of California, Santa Barbara [email protected] 805-893-3244,
Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond
Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS
InP Bipolar Transistors: High Speed Circuits and Manufacturable Submicron Fabrication Processes [email protected] 805-893-3244, 805-893-5705 fax 2003.
Mixed-Signal ASIC Design for Space Communications
