Chapter 5
2012 tus lecture 5
1.Introduction and application. 2.Dopant solid solubility and sheet resistance. 3.Microscopic view point: diffusion equations. 4.Physical basis for diffusion.
First-principles investigation of the size-dependent structural stability and electronic properties of O-vacancies at the ZnO polar and non-polar surfaces
5 Materials Science Diffusion (1)
Ultrathin Gate Dielectrics on SiGe/SiGeC Heterolayers By Siddheswar Maikap
1 Ultrathin Gate Dielectrics on SiGe/SiGeC Heterolayers By Siddheswar Maikap Department of Physics Indian Institute of Technology (IIT), Kharagpur India.
Diffusionddd
Introduction and application. Dopant solid solubility and sheet resistance. Microscopic view point: diffusion equations. Physical basis for diffusion.
