Single Electron Transistor
thesis
Signatures of Tomonaga-Luttinger liquid behavior in shot noise of a carbon nanotube Patrik Recher, Na Young Kim, and Yoshihisa Yamamoto Institute of Industrial.
Latent Noise in Schottky Barrier MOSFETUPoN 20081 Latent Noise in Schottky Barrier MOSFET Sheng-Pin Yeh, Chun-Hsing Shih*, Jeng Gong, and Chenhsin Lien.
1 CHAPTER 8 MOBILITY. 2 8.1 INTRODUCTION 3 High mobility material has higher frequency response and higher current. Electron-electron or hole-hole scattering.
SiC Workshop. EPE 2005, September 12 ESCAPEE Project 1 ESCAPEE EPE 2005 Dresden.
6.1 Transistor Operation 6.2 The Junction FET 6.3 The Metal-Semiconductor FET 6.4 The Metal-Insulator-Semiconductor FET 6.5 The MOS Field-Effect Transistor.
Latent Noise in Schottky Barrier MOSFET
Broader impacts Education Research training of 4 undergraduate and 2 graduate students .
