Characterization of Detectors NEP= noise equivalent power = noise current (A/ Hz)/Radiant sensitivity (A/W) D = detectivity = area/NEP IR cut-off maximum.
2 May 2006 2 May 2006 Determining Optical Constants for ThO 2 Thin Films Sputtered Under Different Bias Voltages from 1.2 to 6.5 eV by Spectroscopic Ellipsometry.
Photomultipliers hf e e e e e e PE effect Secondary electron emission Electron multiplication.
Emerging High-Efficiency Low-Cost Solar Cell Technologies Mike McGehee Materials Science and Engineering Center for Advanced Molecular Photovoltaics Bay.
New Developments in Surface Science Complex 2D Systems (Graphene and beyond…) Biosurfaces
Semiconductor Detectors Track Overview
