×
Log in
Get Started
Travel
Technology
Sports
Marketing
Education
Career
Social Media
+ Explore all categories
Report -
SiN Etch Recipe using RIE#3...Etch Selectivity (SiN x /PR) =0.81 (Prior to the SiN x etch, do O 2 plasma chamber clean: 50mT, O 2 =20sccm, bias voltage=500 V, and time=30 minutes.
Select
Pornographic
Defamatory
Illegal/Unlawful
Spam
Other Terms Of Service Violation
File a copyright complaint
Please pass captcha verification before submit form