WAFER ANALYSIS BY BSE ICP-MSBULK SILICON ETCHINDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY
What is BSE ICP-MS?
Application1. Implant 4. CVD: PECVD, LPCVD2. Silicon Epitaxial 5. Sawing3. CMP
Advanced wet-chemistries etching of Si-based film or substrate allowing trace metals characterization across a large surface area within certain depth. This versatile technique allows single or multi step etching of film or substrate varying from 50Å to 100µm.
Si or Poly
Sub-surface trace metals by Multi Step BSE ICP-MS
Bulk trace metals by Bulk Digestion Polysilicon or Silicon Substrate
Method Detection Limits (E10 atoms/cm2)
Aluminum (Al)Antimony (Sb)
Arsenic (As)Barium (Ba)
Beryllium (Be)Bismuth (Bi)
Boron (B)
Cadmium (Cd)Calcium (Ca)
Chromium (Cr)
5
0.05
0.5
0.05
5
0.02
10
0.1
5
1
MDLELEMENTS
Cobalt (Co)Copper (Cu)
Gallium (Ga)Germanium (Ge)
Iron (Fe)Lead (Pb)
Lithium (Li)
Magnesium (Mg)Manganese (Mn)
Molybdenum (Mg)
0.2
1
0.2
0.2
3
0.05
1
5
0.05
0.5
MDLELEMENTS
Nickel (Ni)Potassium (K)
Sodium (Na)Strontium (Sr)
Tin (Sn)Titanium (Ti)Tungsten (W)
Vanadium (V)Zinc (Zn)
Zirconium (Zr)
0.5
5
5
0.05
0.1
2
0.5
0.5
1
0.05
MDLELEMENTS
Method detection limits (MDL) are based on 500Å etch depth
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CROSS SECTION VIEW OF POLYSIL ICON OR SIL ICON SUBSTRATE
-- In-film by BSE ICP-MS
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