JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001 TRANSISTOR (NPN) FEATURES
Power switching applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 450 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 8 V Collector cut-off current ICBO VCB=600V,IE=0 100 μA Collector cut-off current ICEO VCE=400V,IB=0 100 μA Emitter cut-off current IEBO VEB=7V,IC=0 100 μA
hFE(1) VCE=20V, IC=20mA 14 29 hFE(2) VCE=10V, IC=0.25mA 5 DC current gain hFE(3) VCE=5V, IC=0.5A 1
Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=10mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=50mA,IB=10mA 1.1 V Transition frequency fT VCE=20V,IC=20mA,f=1MHz 8 MHz Rail time tr 0.9 μs
Storage time ts 1.7IC=0.1A
2.9 μs
CLASSIFICATION OF hFE(1) Range 14-17 17-20 20-23 23-26 26-29
Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 8 V
IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~150
TO-92
1. BASE
2. COLLECTOR
3. EMITTER
℃
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Administrator矩形
Administrator线条
Administrator线条
0 25 50 75 100 125 1500.0
0.2
0.4
0.6
0.8
1.0
0.1 1 10 1000
10
20
30
40
0.1 1 101
10
100
0.1 1 10 1000.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1 1 10 10010
100
0.4 0.6 0.8 1.01
10
100
0 10 20 30 40 500
10
20
30
40
3DD13001Typical CharacterisiticsCO
LLEC
TOR
POW
ER D
ISSI
PATI
ON
PC
(W
)
AMBIENT TEMPERATURE Ta ( )℃
PC —— Ta
VBE
hFE ——
IC ——
3 300.3
Ta=100℃
Ta=25℃
DC C
URRE
NT G
AIN
h F
E
COLLECTOR CURRENT IC (mA)
VCE=20V
IC
200
300
30
3
30.3 20
Cob
Cib
REVERSE VOLTAGE V (V)
f=1MHzIE=0/IC=0Ta=25℃
VCB/ VEBCob/ Cib ——
CAPA
CITA
NCE
C
(p
F)
3030.3
β=5
BASE
-EM
ITTE
R SA
TURA
TIO
NVO
LTAG
E
V BEs
at
(V)
COLLECTOR CURRENT IC (mA)
Ta=25℃
Ta=100℃
200
ICVBEsat ——
30
300
3030.3
COLL
ECTO
R-EM
ITTE
R SA
TURA
TIO
NVO
LTAG
E
V CEs
at
(mV)
COLLECTOR CURRENT IC (mA)
β=5
Ta=25℃
Ta=100℃
ICVCEsat —— 500
200
Ta=25℃
Ta=100℃
VCE=20V
30
3
200
COLL
CETO
R CU
RREN
T
I C
(mA)
BASE-EMMITER VOLTAGE VBE (V)
1.5mA
1.35mA
1.2mA
1.05mA
900uA
750uA
600uA
300uA
450uA
IB=150uA
Static Characteristic
COMMONEMITTERTa=25℃
COLL
ECTO
R CU
RREN
T
I C
(mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
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Typical Characteristics
Min Max Min MaxA 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055b 0.380 0.550 0.015 0.022c 0.360 0.510 0.014 0.020D 4.400 4.700 0.173 0.185D1 3.430 0.135E 4.300 4.700 0.169 0.185e
e1 2.440 2.640 0.096 0.104L 14.100 14.500 0.555 0.571Φ 1.600 0.063h 0.000 0.380 0.000 0.015
Symbol Dimensions In Millimeters Dimensions In Inches
1.270 TYP 0.050 TYP
TO-92 Package Outline Dimensions
TO-92 Suggested Pad Layout
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TO-92
4 C,Oct,2014
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