P h o t o d i o d e s • A P D s • P h o t o r e c e i v e r s • E l e c t r o - O p t i c a l I n s t r u m e n t s
2 0 1 6 C A T A L O G V.5
1
Voxtel Catalog, rev. 07, 10/2016 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
2
Voxtel is at the forefront of technology for high-sensitivity infrared sensing. Our products are providing our customers with improved solutions for a variety of commercial, scientific, and military sensing applications, and are providing the performance to make new applications possible.
The company was founded in 1999 with a strong focus on innovation and on bringing advanced electo-optics technologies to market, quickly and efficiently. We anticipate and translate application needs into innovative and cost-effective solutions, which we deliver to the market on time and with exceptional quality, allowing both Voxtel and our channel partners an optimal return on investment and rate of growth.
©2016 Voxtel, Inc.
Voxtel Headquarters:
15985 NW Schendel Ave. #200
Beaverton, OR 97006
LEGAL DISCLAIMER
Information in this catalog is subject to change without notice. It may contain technical inaccuracies or typographical errors.
Voxtel, Inc. may make improvements and/or changes in the products described in this information at any time, without notice.
Voxtel, Inc. reserves the right to dicontinue or change product specifications and prices without prior notice. Inadvertent errors
in advertised prices are not binding on Voxtel, Inc.
INFORMATION IN THIS CATALOG IS PROVIDED “AS IS” WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, INCLUDING,
BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR APPLICATION,
OR NON-INFRINGEMENT.
Voxtel strives to be the industry’s first-choice solution for electro-optical devices, subsystems, and instrumentation.
2
Voxtel Catalog, rev. 07, 10/2016 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
ContentsIntroduction to APDs ........................................................................................................................... 4
Photoreceivers
• Deschutes Photoreceivers ........................................................................................................ 6 • Siletz Photoreceivers ............................................................................................................. 13
Packaged APDs
• Deschutes Packaged APDs ..................................................................................................... 20 • Siletz Packaged APDs ............................................................................................................. 27
Submounted APD Dies
• Deschutes Submounted APD Dies .......................................................................................... 34 • Siletz Submounted APD Dies .................................................................................................. 41
Photoreceiver Support Module
• Electronics Support Module ................................................................................................... 48
Contact .............................................................................................................................................. 50
3
Voxtel Catalog, rev. 07, 10/2016 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
Introduction to APDsVoxtel’s APDs offer superior response and linear-mode, low-light-level detection capabilities that conventional telecommunications APDs and Geiger-mode APDs cannot offer.
Customers with applications that are presently served by NIR photodiodes or low-gain telecom APDs will often prefer the Deschutes™ APDs and photoreceivers for their modest price and low-noise performance. A variety of high-performance and low-light-level applications are best served by our Siletz™ line of high-gain, high-responsivity products.
Voxtel’s single-element devices are available as bare die, on submounts (for our backside-illuminated products), in hermetic packages, and integrated into photoreceivers, with a variety of options for packaging and optical input.
4
Voxtel Catalog, rev. 07, 10/2016 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
Photoreceivers
5
InGaAsAPDsforsignalgain
Lowexcessnoise(keff≈0.20)gain
Lownoisetransimpedanceamplif ier(TIA)
Hermetichousingwithther-moelectriccooling(TEC)
Superiorsignal-to-noise(STN)performance
Lasercom
LADAR/LIDAR
Fluorescencestudies
Biological imaging
NIRconfocalmicroscopy
Applications
Features
Deschutes™ PhotoreceiversMHz-Class Receivers with High-Responsivity, Back-Side-Illuminated NIR InGaAs/InAlAs APDs
Model RDC1-NJAF: 200 µm APD, 300 MHzModel RDC1-JJAF: 75 µm APD, 580 MHzModel RYC1-NJAF: 200 µm APD, 200 MHzModel RVC1-NJAF: 200 µm APD, 120 MHz
Voxtel’s RxC‑1000 Series high‑sensitivity photoreceivers integrate our Deschutes backside‑illuminated avalanche photodiodes (APDs) with low‑noise, high‑bandwidth transimpedance amplifiers (TIAs). The backside‑illuminated configuration of the Deschutes detectors provides both higher responsivity and lower capacitance than competing frontside‑ illuminated APDs. The APD is custom‑engineered for reduced excess noise, which allows this photoreceiver to achieve higher sensitivity, better signal‑to‑noise performance, and lower bit error rate (BER) than conventional tele‑com APDs. A single‑stage thermoelectric cooler (TEC) is included to stabilize temperature.
The RxC‑1000 Series of photoreceivers comes standard with a large‑area, low-noise 200-μm APD, and is also available with a smaller 75-µm APD, which provides increased bandwidth and sensitivity. Contact Voxtel for more information on this and other options.
Standard fiber pigtail options for the 75-µm receivers include 62.5/125 (0.37NA) graded-index and 105/125 (0.37NA) step-index multi-mode fibers; other fiber options can be custom ordered. Optionally available with the photoreceivers are support electronics modules, which provide power con‑ditioning and TEC control.
Deschutes™ InGaAs APD PhotoreceiversRxC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
6
D e s c h u t e s S e r i e s N e a r - I n f r a r e d A P D s
SIDE VIEWwith cap
BOTTOM VIEW
2.39 ±0.15mm
6.65 ±0.14mm
0.38 ±0.03mm
6.35 mm
Ø 15.25 mm
10.16 mm
Ø 0.45 mm
Ø 1.50 mm
1) Gnd2) +APD3) TEC+4) TSense–5) TEC–6) TSense+
7) Out–8) Gnd9) Out+10) VCC +3.3V11) N/C12) N/C
0.80 mm
5.08
mm
2.54
mm
0.80 mm
1 2 312
1 2 3
12
10.16 mm
Ø 15.25 mm
Ø 0.45 mm
Ø 1.50 mm
0.80 mm
5.08
mm
2.54
mm
0.80 mm
Ø 16.50 mm
Ø 8.00 mm
12.83 mm 3.61 mm 1000 mm
0.70 mm
6.35 mm
Ø 3.81 mm
Ø 16.50 mm
BOTTOM VIEW TOP VIEWSIDE VIEW
17.14 mm
TSense+ (B/C)
TSense– (E)
VCC
TEC–
TEC++APD
Gnd
Gnd
N/C
Out+Out–
N/CTSense
Spectralresponsivityandquantumef-ficiencyof200µmAPDat298K.
0.0
0.2
0.4
0.6
0.8
1
900 1100 1300 1500 1700
Wavelength [nm]
Deschutes BSI Responsivity
Deschutes BSI QE
Model Diameter Bandwidth NEP
RDC1-NJAF 200μmAPD 300MHz X
RDC1-JJAF 75μmAPD 580MHz X
RYC1-NJAF 200μmAPD 200MHz X
RYC1-NJAF 200μmAPD 120MHz X
Packaged InGaAs APDs Deschutes™RxC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
7
Linearity of Response: RDC1-JJAC 580-MHz
LinearityofresponseintheDeschutesphotoreceiver,model
RDC1-JJAF.20-MHzmodulatedsignal.
M o d e l R D C 1-J J A F75 - µ m - d i a m e t e r 5 8 0 - M H z A P D P h o t o r e c e i v e r
Parameter Min Typical Max Units
Spectral Range, λ 950 1064–1600 1750 nm
Active Diameter 75 μm
Bandwidth 200 MHz
APD Operating Gain, M 1 15 20
Receiver Responsivity at M=10i 100/140 kV/W at 1064/1550 nm
Noise Equivalent Power at M=20 3.1/2.4 nW at 1064/1550 nm
Low Frequency Cutoff 30 kHz
APD Breakdown Voltage, VBR 45 50 55 V @ 295 K
TEC ∆T 40 K @ 295 K
TEC Supply 1.8/1.9 A/V
Temp Sensing Diode
Voltage and ∆V/K ii 0.480.50
-2.18 mV/K0.51 V
TIA Power 20 mA @ 3.3 V
Output Impedanceiii 75 90 Ω
Overload/Saturation Power iv 100 µW
Maximum Instantaneous
Input Powerv 1 mW
Window Thickness 0.76 0.94 1.12 mm
Window Transparency 95/98% 1064/1550 nm
i 10 MHz, -40 dBm signalii Sourcing 10 µA, T=298 Kiii Single-ended; 100 Ω differentialiv 1550 nm signal with an APD multiplication gain of M=10v APD multiplication gain of M=10 with a 10 ns 1064 nm signal at a 20 Hz PRF
250
200
150
100
50
00.1 0.30.2 0.5 13 2
Signal Power [µW]
Resp
onsi
vity
[kV/
W] Avg.
95%90%
Avg.95%90%M=10
M=20
S p e c i f i c a t i o n s
Deschutes™ InGaAs APD PhotoreceiversRxC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
8
Linearity of Response: RDC1-NJAC 300-MHz
LinearityofresponseintheDeschutesphotoreceiver,model
RDC1-NJAF.20-MHzmodulatedsignal.
Parameter Min Typical Max Units
Spectral Range, λ 950 1064–1600 1750 nm
Active Diameter 200 μm
Bandwidth 300 MHz
APD Operating Gain, M 1 15 20
Receiver Responsivity at M=10i 100/140 kV/W at 1064/1550 nm
Noise Equivalent Power at M=20 4.1/3.2 nW at 1064/1550 nm
Low Frequency Cutoff 30 kHz
APD Breakdown Voltage, VBR 45 50 55 V @ 295 K
TEC ∆T 40 K @ 295 K
TEC Supply 1.8/1.9 A/V
Temp Sensing Diode
Voltage and ∆V/K ii 0.480.50
-2.18 mV/K0.51 V
TIA Power 20 mA @ 3.3 V
Output Impedanceiii 75 90 Ω
Overload/Saturation Power iv 100 µW
Maximum Instantaneous
Input Powerv 5 mW
Window Thickness 0.76 0.94 1.12 mm
Window Transparency 95/98% 1064/1550 nm
i 10 MHz, -40 dBm signalii Sourcing 10 µA, T=298 Kiii Single-ended; 100 Ω differentialiv 1550 nm signal with an APD multiplication gain of M=10v APD multiplication gain of M=10 with a 10 ns 1064 nm signal at a 20 Hz PRF
250
200
150
100
50
00.1 0.30.2 0.5 13 2
Signal Power [µW]
Resp
onsi
vity
[kV/
W] Avg.
95%90%
Avg.95%90%M=10
M=20
S p e c i f i c a t i o n s
M o d e l R D C 1- N J A F2 0 0 - µ m - d i a m e t e r 3 0 0 - M H z A P D P h o t o r e c e i v e r
Packaged InGaAs APDs Deschutes™RxC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
9
S p e c i f i c a t i o n s
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 200 μm
Bandwidth 200 MHz
APD Operating Gain, M 1 10-15 20
Receiver Responsivity at M=10i 80/100 kV/W at 1064/1550 nm
Noise Equivalent Power at M=20 4.0/3.1 nW at 1064/1550 nm
Low Frequency Cutoff ii 30 kHz
APD Breakdown Voltage, VBR 45 50 55 V @ T = 295 K
TEC ∆T 40 K @ T = 295 K
TEC Supply 1.8/1.9 A/V
Temp Sensing Diode,
Voltage and ∆V/K iii 0.480.50
-2.18 mV/K0.51 V
TIA Power 25 mA @ 5V
Output Impedenceiv 40 50 60 Ω
Overload/Saturation Powerv 20 35 μW
Max Instantaneous Input Powervi 5 mW
Window Thickness 0.76 0.94 1.12 mm
Window Transparency 95/98% 1064/1550 nm
i 10 MHz, -40 dBm signalii -3 dB, 1 µA input iii Sourcing 10 µA, T=298 Kiv Single-ended; 100 Ω differentialv 1550 nm signal with APDmultiplication gain of M=10vi APD multiplication gain of M=10 with a 10 ns 1064 nm signal at 20 Hz PRF
10
100
1,000
Frequency [Hz]
Rece
iver
Res
pons
ivity
@15
50 n
m [
kV/W
]
M=10
M=20
1.E+05 1.E+06 1.E+07 1.E+08 1.E+09
M o d e l RYC 1- N J A F2 0 0 - µ m - d i a m e t e r 2 0 0 - M H z A P D P h o t o r e c e i v e r
Deschutes™ InGaAs APD PhotoreceiversRxC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
10
RVC1-NJAA Bandwidth
1.E+05 1.E+06 1.E+07 1.E+08 1.E+09Frequency [Hz]
Rece
iver
Res
pons
ivity
[kV/
W] M=10
M=20
10
100
1000
S p e c i f i c a t i o n s
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 200 μm
Bandwidth 120 MHz
APD Operating Gain, M 1 15 20
Receiver Responsivity at M=10i 272/340 kV/W at 1064/1550 nm
Noise Equivalent Power at M=20 3.1/2.4 nW at 1064/1550 nm
Low Frequency Cutoff 7 25 kHz
APD Breakdown Voltage, VBR 45 50 55 V @ 295 K
TEC ∆T 40 K @ 295 K
TEC Supply 1.8/1.9 A/V
Temp Sensing Diode
Voltage and ∆V/K ii 0.480.50
-2.18 mV/K0.51 V
TIA Power 22 28 36 mA @ 3.3 V
Output Impedenceiii 50 67 80 Ω
Overload/Saturation Power iv 100 300 μW
Max Instantaneous Input Powerv 5 mW
Window Thickness 0.76 0.94 1.12 mm
Window Transparency 95/98% 1064/1550 nm
i 10 MHz, -40 dBm signalii Sourcing 10 μA, T=298 Kiii Single-ended; 100 Ω differentialiv 1550 nm signal with an APD multiplication gain of M=10v APD multiplication gain of M=10 with a 10 ns 1064 nm signal at a 20 Hz PRF
M o d e l R VC 1- N J A F2 0 0 - µ m - d i a m e t e r 12 0 - M H z A P D P h o t o r e c e i v e r
Packaged InGaAs APDs Deschutes™RxC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
11
R - C1 1 - J - F
Device Type TIA Detector Elements Diameter Package
Option Lens Option Rev.
R = Photo-
receiver
D = 580 MHz
Y = 250 MHz
V = 160 MHz
C = Deschutes
APD
1 = Single
Element
J = 75 μm
N = 200 μm
J = TO-8 w/ 1-Stage
TEC
K = TO-46
A = Flat
Window
L = Single-mode
(SM) 7μm
P = Multi-
mode (MM) 50/125μm
Q = MM
62.5/125μm
R=MM 105/125μm
F = 40ºC ∆T 1-Stage
TEC
Not all combinations of product features are available. Contact Voxtel for specific ordering information and parts availability.*Receiver bandwidth depends on APD diameter and capacitance.
O r d e r i n g I n f o r m a t i o n F o r R x C -10 0 0 S e r i e s A P D P r o d u c t s
C a u t i o n D u r i n g A P D O p e r a t i o nIf an APD is operated above its breakdown voltage without some form of current protection, it can draw enough cur‑rent to permanently damage the device. To guard against this, the user can add either a protective resistor to the bias circuit or a current‑limiting circuit in the supporting electronics.
The breakdown voltage of an APD is dependent upon its temperature: the breakdown voltage decreases when the APD is cooled. Consequently, a reverse bias operat‑ing point that is safe at room temperature may put the APD into breakdown at low temperature. The approxi‑mate temperature dependence of the breakdown voltage is published in the spec sheet for the part, but caution should be exercised when an APD is cooled.
Low‑noise readout circuits usually have high impedance, and an unusually strong current pulse from the APD could generate a momentary excessive voltage that is higher
than the readout’s supply voltage, possibly damaging the input to the amplifier. To prevent this, a protective circuit should be connected to divert excessive voltage at the in‑puts to a power supply voltage line.
As noted in the specification, another consideration is that the APD gain changes depending on temperature. When an APD is used over a wide temperature range, it is necessary to use some kind of temperature compensation to obtain operation at a stable gain. This can be imple‑mented as either regulation of the applied reverse bias according to temperature, feedback temperature control using a thermoelectric cooler (TEC) or other refrigerator, or both.
Upon request, Voxtel will gladly assist customers in imple‑menting the proper controls to ensure safe and reliable operation of APDs in their system.
Deschutes™ InGaAs APD PhotoreceiversRxC-1000 Series
Voxtel Literature No. RxC-1000 Series Deschutes Photoreceivers, 19July2017 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
12
Applications
Features
InGaAs/InAlAs single-carrier
multipli cation APD (SCM-APD)
Integrated low-noise
transimpedance amplifier
950–1700 nm spectral response
High responsivity
Low excess noise
High bandwidth
High gain
–5 to +75 °C operating
case temperature
Range finding
LADAR/LIDAR
Fluorescence measurements
Free-space optical
communication systems
Spectroscopy, electrophoresis,
chromatography
Ultra-fast pulse and transient
measurements
Voxtel offers high-sensitivity photoreceivers based on its Siletz™ single-carrier multiplication APDs (SCM-APDs) in the RXP-1000 product series. High bandwidth as well as 75 μm and 200 μm optical areas make these ideal for laser rangefinders, laser designators, free space optical communication, optical instrumentation, and LADAR/LIDAR.
Voxtel’s VFP-1000 Series of Siletz™ SCM-APDs integrates low-noise with transimpedance amplifiers (TIAs). Voxtel’s SCM-APDs offer extremely low excess-noise NIR–SWIR APDs, allowing the receiver to operate at high avalanche gain, boosting the optical signal over the amplifier noise level without the degrading effects of avalanche-induced excess noise. These photoreceivers are the most sensitive receivers available on the market today. A single-stage thermoelectric cooler (TEC) is included to eliminate temperature-induced gain variations and allow optimal performance over the range of application environments.
Standard fiber pigtail options for the 75 µm receivers include 62.5/125 (0.37 NA) graded-index and 105/125 (0.37 NA) step-index multi-mode fibers; other fiber options can be custom ordered. Optionally available with the photoreceivers are Support Electronics Modules, which provide power conditioning and TEC control.
SILETZ BSI™ APD PhotoreceiversMHz- and GHz-Class Receivers with High-Gain, Low Excess
Noise NIR Single-Carrier Multiplication APDs (SCM-APDs)
Model RDP1-NJAF: 200 µm APD, 350 MHzModel RIP1-NJAF: 200 µm APD, 1 GHzModel RIP1-JJAF: 75 µm APD, 2.2 GHzModel R2P1-JCAA: 75 µm APD, 1.5 GHz TO-46
RxP-1000 SeriesSiletz BSI™ APD Photoreceivers
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
13
S i l e t z™ S e r i e s A P D P h o t o r e c e i v e r s
APD Photoreceivers Siletz BSI™
Spectral responsivity curve and quantum
eff iciency at gain M = 1, T = 295 K. 200-µm SCM-APD.
0.0
0.2
0.4
0.6
0.8
1.0
900 1100 1300 1500 1700
Wavelength [nm]
Voxtel SCM-APD Responsivity
Voxtel SCM-APD QE
Standard receiver configurations with typi-cal NEP valves and bandwidths
SIDE VIEWwith cap
2.39 ±0.15mm
6.65 ±0.14mm
0.38 ±0.03mm
6.35 mm
BOTTOM VIEW
Ø 15.25 mm
10.16 mm
Ø 0.45 mm
Ø 1.50 mm
1) Gnd2) +APD3) TEC+4) TSense–5) TEC–6) TSense+
7) Out–8) Gnd9) Out+10) VCC +3.3V11) N/C12) N/C
0.80 mm
5.08
mm
2.54
mm
0.80 mm
1 2 312
1 2 3
12
10.16 mm
Ø 15.25 mm
Ø 0.45 mm
Ø 1.50 mm
0.80 mm
5.08
mm
2.54
mm
0.80 mm
Ø 16.50 mm
Ø 8.00 mm
12.83 mm 3.61 mm 1000 mm
0.70 mm
6.35 mm
Ø 3.81 mm
Ø 16.50 mm
BOTTOM VIEW TOP VIEWSIDE VIEW
17.14 mm
Bandwidth [Hz]
Noi
se E
quiv
alen
t Pow
er [n
W]
1.00E+08 1.00E+09 1.00E+10
18
16
14
12
10
6
4
0
2
8
RVC1-NJAFRYC1-NJAFRDC1-NJAFRDP1-NJAFRIP1-NJAFRIP1-JJAF (75µm)
TSense+ (B/C)
TSense– (E)
VCC
TEC–
TEC++APD
Gnd
Gnd
N/C
Out+Out–
N/CTSense
RxP-1000 Series
Ø 4.22
1.4
Ø 5.31 mm
57°57°
82° 82°
Ø 2.54
2.55
4.705.38
BOTTOM VIEWSIDE VIEWwith cap
0.77
2.70
1.37
Pinout1) DOUT2) VDD3) V+ APD4) DOUT B5) GND
111
5
123
4
TOP VIEWheader only
TO-46
Package
TO-8
Package
Fiber-coupled TO-8 Package
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
14
M o d e l R D P1- N J A F
Specifications
RxP-1000 SeriesSiletz BSI™ APD Photoreceivers
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 200 μm
Bandwidth 350 MHz
APD Operating Gain, M 1 10-30 40
Receiver Responsivity at M=40 400/560 kV/W at 1064/1550 nm
Noise Equivalent Power at M=40 10/8 nW at 1064/1550 nm
Low Frequency Cutoffi 30 kHz
APD Breakdown Voltage, VBR 70 74 80 V @ T = 298 K
TEC ∆T 40 K @ T = 298 K
TEC Supply 1.8/1.9 A/V
Temp Sensing Diode
Voltage and ∆V/Kii0.48
0.50
-2.18 mV/K0.51 V
TIA Power 25 mA @ 3.3 V
Output Impedanceiii 60 75 90 Ω
Overload/Saturation Poweriv 100 µW
Maximum Instantaneous
Input Powerv5 mW
Window Thickness 0.76 0.94 1.12 mm
i - 3 d B , 4 0 µ A i n p u ti i S o u r c i n g 1 0 µ A , T = 2 9 8 Ki i i S i n g l e - e n d e d ; 1 5 0 Ω d i f f e r e n t i a li v 1 5 5 0 n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0v 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D
m u l t i p l i c a t i o n g a i n o f M= 1 0
S i l e t z™ S e r i e s A P D P h o t o r e c e i v e r2 0 0 µ m , 3 5 0 M H z
Frequency [MHz]
Rece
iver
Res
pons
ivit
y @
155
0 nm
[kV
/W]
M = 10M = 40
1
1
1
1 10 100 1000 10000
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
15
M o d e l R I P1- N J A F
RxP-1000 SeriesAPD Photoreceivers Siletz BSI™
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 200 μm
Bandwidth 1 GHz
APD Operating Gain, M 1 10-30 40
Receiver Responsivity at M=10i 32/40 kV/W at 1064/1550 nm
Noise Equivalent Power at M=40 20/16 nW at 1064/1550 nm
Low Frequency Cutoffii 65 kHz
APD Breakdown Voltage, VBR 70 74 80 V @ T = 298 K
TEC ∆T 40 K @ T = 298 K
TEC Supply 1.8/1.9 A/V
Temp Sensing Diode
Voltage and ∆V/Kiii0.48
0.50
-2.18 mV/K0.51 V
TIA Power 25 mA @ 3.3 V
Output Impedanceiv 42.5 50 57.5 Ω
Overload/Saturation Powerv 100 µW
Max Instantaneous Input Powervi 5 mW
Window Thickness 0.76 0.94 1.12 mm
Window Transparency 95/98% 1064/1550 nm
i 1 0 M H z , - 4 0 d B m s i g n a li i 1 3 d B , 4 0 µ A i n p u ti i i S o u r c i n g 1 0 µ A , T= 2 9 8 Ki v S i n g l e - e n d e d ; 1 0 0 Ω d i f f e r e n t i a lv 1 5 5 0 n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0v i 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n
A P D m u l t i p l i c a t i o n g a i n o f M= 1 0
Specifications
1
10
100
1 100 1,000 10,000Frequency [MHz]
Rece
iver
Res
pons
ivity
@15
50 n
m [k
V /
W]
10
M=10M=40
S i l e t z™ S e r i e s A P D P h o t o r e c e i v e r2 0 0 µ m , 1 G H z
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
16
M o d e l R I P1-J J A F
Specifications
RxP-1000 SeriesSiletz BSI™ APD Photoreceivers
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 75 μm
Bandwidth 2.2 GHz
APD Operating Gain, M 1 10-30 40
Receiver Responsivity at M=40 88/115 kV/W at 1064/1550 nm
Noise Equivalent Power at M=40 10/8 nW at 1064/1550 nm
Low Frequency Cutoffi 65 kHz
APD Breakdown Voltage, VBRii 70 74 80 V
TEC ∆T 40 K @ T = 298 K
TEC Supply 1.8/1.9 A/V
Temp Sensing Diode
Voltage and ∆V/Kiii0.48
0.50
-2.18 mV/K0.51 V
TIA Power 25 mA @ 3.3 V
Output Impedanceiv 42.5 50 57.5 Ω
Overload/Saturation Powerv 100 µW
Max Instantaneous Input Powervi 1 mW
Window Thickness 0.76 0.94 1.12 mm
Window Transparency 95/98% 1064/1550 nm
i - 3 d B , 4 0 µ A i n p u ti i T= 2 9 5 Ki i i S o u r c i n g 1 0 µ A , T = 2 9 8 Ki v S i n g l e - e n d e d ; 1 0 0 Ω d i f f e r e n t i a lv 1 5 5 0 n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0v i 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D
m u l t i p l i c a t i o n g a i n o f M= 1 0
1
10
100
Rece
iver
Res
pons
ivity
@15
50 n
m [
kV/W
]
1 10 100 1,000 10,000
M = 10M = 40
Frequency [MHz]
S i l e t z™ S e r i e s A P D P h o t o r e c e i v e r
75 µ m , 2 . 2 G H z
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
17
Ordering Information For VFP-1000 Series APD Products
Not all combinations of product features are available. Please contact
Voxtel for specific ordering information and parts availability.
C a u t i o n D u r i n g A P D O p e r a t i o n
If an APD is operated above its breakdown volt-age without some form of current protection, it can draw enough current to permanently damage the de-vice. To guard against this, the user can add either a protective resistor to the bias circuit or a current-limiting circuit in the supporting electronics.
The breakdown voltage of an APD is dependent upon its temperature: the breakdown voltage de-creases when the APD is cooled. Consequently, a re-verse bias operating point that is safe at room tem-perature may put the APD into breakdown at low temperature. The approximate temperature depen-dence of the breakdown voltage is published in the spec sheet for the part, but caution should be exer-cised when an APD is cooled.
Low-noise readout circuits usually have high im-pedance, and an unusually strong current pulse from the APD could generate a momentary excessive volt-
age that is higher than the readout’s supply voltage, possibly damaging the input to the amplifier. To pre-vent this, a protective circuit should be connected to divert excessive voltage at the inputs to a power supply voltage line.
As noted in the specification, another consider-ation is that the APD gain changes depending on temperature. When an APD is used over a wide tem-perature range, it is necessary to use some kind of temperature compensation to obtain operation at a stable gain. This can be implemented as either regulation of the applied reverse bias according to temperature, feedback temperature control using a thermoelectric cooler (TEC) or other refrigerator, or both.
Upon request, Voxtel will gladly assist customers in implementing the proper controls to ensure safe and reliable operation of APDs in their system.
R - P1 - - - -
Device Type Amplifier Detector Diameter Package Option Lens Option Revision
R=PhotoreceiverD=580MHz TIAI=2.5GHz TIA2=1.7GHz TIA
P=Siletz SCM-APD
J=75μmN=200μm
C=TO-46J=TO-8 with 1-Stage TEC
A=Flat Window
Q=MM 62.5/125μm
R=MM 105/125μm
S=MM 200/125µm
RxP-1000 SeriesAPD Photoreceivers Siletz BSI™
Voxtel Literature No. RxP-1000 Series, Version date: 07/2012 ©Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
18
Voxtel Catalog, rev. 07, 10/2016 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
Packaged APDs
19
Applications
• Lasercom
• Laser rangefinding
• LADAR/LIDAR
• Fluorescense studies
Deschutes™ Packaged APDsReduced-excess-noise APD in TO-46 or TO-8 with optional 3-stage thermoelectric cooler
Model VFC1-xCAA Packaged APD (TO-46)Model VFC1-xKAB Packaged APD (TO-8)
Reduced-excess-noise avalanche photodiodes (APDs) in hermetic TO-46 or TO-8 packages allow users to easily integrate Voxtel's 950 – 1700-nm-re-sponse APDs into high-performance electro-optical systems. The TO-8 pack-age allows for a 3-stage thermo-electric cooler, which can provide a 100 °C temperature differential from ambient (packages rated down to -40°C.)
Voxtel’s VFC-1000 series APDs are designed to deliver the best possible sen-sitivity for high-bandwidth near infrared (NIR) and short-wavelength infrared (SWIR) optical applications. With low avalanche noise and high quantum ef-ficiency over the 950 – 1700-nm spectral band, including the eyesafe wave-lengths beyond 1400 nm, the VFC-1000 InGaAs APDs provide enhanced re-sponsivity relative to p-i-n photodiodes, with lower noise than conventional NIR APD designs.
Voxtel’s thin InAlAs multiplication region InGaAs APD technology suppress-es the excess multiplication noise associated with the avalanche process, improving the signal-to-noise ratio of the detector. Contemporary APDs achieve high responsivity through internal current gain, but the usefulness of the gain of these APDs is undermined by the accompanying noise. Voxtel’s APDs can be operated at relatively high gain with a smaller noise penalty, providing a significant advantage. Coupling the APD to a low-noise amplifier produces a receiver with superior noise equivalent power (sensitivity).
Features
• Low-capacitance mesa ar-chitecture
• Back-i l luminated for highsensitivity
• Wide spectral response -950-1700 nm
• Less (4x lower) excessnoise than other commer-cial APDs
• Low noise gain; M>20
Deschutes™ Packaged InGaAs APDsVFC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
20
V F C - 1 0 0 0 S e r i e s
0 1 2 3 4 5 6 7 8 9 10 11 12
5
4
3.5
3
2
1.5
1
4.5
2.5
Gain (M)
Exce
ss N
oise
Fac
tor (
F)
k=0.4 (Telecom APD)k=0.2Deschutes BSI R-APD
200.00 250.00 300.00 350.00Temperature [K ]
M=1
0 D
ark
Cur
rent
[A]
1.E-07
1.E-08
1.E-09
1.E-10
Idark = 6x1015e0.05T
R2 = 0.994
200.00 250.00 300.00 350.00Temperature [K ]
Brea
kdow
n Vo
ltage
(V)
47.50
45.50
45.00
47.00
46.50
44.50
46.00
43.50
44.00
42.50
43.00
Vbr = 0.34T+36.1
R2 = 0.999
Spectral responsivity and quantum efficiencyof 200µm APD @ 298K
Effects of temperature on dark current and breakdown voltage of a 200-µm Deschutes APD at M=10
Excess noise of the Deschutes APD, k~0.2
M o d e l V F C 1 - x CAA / x K A B
0.0
0.2
0.4
0.6
0.8
1
900 1100 1300 1500 1700Wavelength [nm]
Res
pons
ivit
y [A
/W]
Deschutes BSI Responsivity
Deschutes BSI QE
0
20
40
60
80
100
Packaged InGaAs APDs Deschutes™VFC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
21
M o d e l V F C 1 - x CAA / x K A B
Mechanical Information
TO-46 Package
TO-8 Package
V F C - 1 0 0 0 S e r i e s
M e c h a n i c a l In f o r m a t i o n
Deschutes™ Packaged InGaAs APDsVFC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
22
S p e c i f i c a t i o n s
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 75 μm
APD Operating Gain, M 1 10 20
Responsivity at M=1 .66
.91
.73
1.01
.78
1.04
A / W
λ=1064 nm
λ=1550 nm
Excess Noise Factor, F(M,k)3.4
4.3
M=10
M=15
Noise Spectral Density @ M=10 0.48 pA / Hz1/2
Dark Current @ M=1i 0.8 1.9 2.5 nA
Total Capacitanceii 0.76 pF
Bandwidth 2.0 GHz
Breakdown Voltage, VBRiii 44 49 55 V
∆VBR/∆T 30 34 39 mV / K
Minimum Internal Temperature -40 °C
TE cooler ratingiv 1.9 / 1.2 V / A
Temperature Sensing Diode
Voltage and ΔV/Kv0.48
0.50
-2.18 mV / K0.51 V
Maximum Instantaneous Input Powervi1 mW
i Gain normalized from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAiv For VFC1-xKAB devices, package at 298 Kv Sourcing 10 μA, T=298 Kvi 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10
M o d e l s V F C 1 - J C A A ( T O - 4 6 ) a n d V F C 1 - J K A B ( T O - 8 w / 3 - s t a g e T E C )7 5 - m i c r o n A P D , 2 . 0 G H z o n c e r a m i c s u b m o u n t
Packaged InGaAs APDs Deschutes™VFC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
23
S p e c i f i c a t i o n s
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 200 μm
APD Operating Gain, M 1 10 20
Responsivity at M=1 .66
.91
.73
1.01
.78
1.04
A / W
λ=1064 nm
λ=1550 nm
Excess Noise Factor, F(M,k)3.9
7.9
M=10
M=20
Noise Spectral Density @ M=10 1.01 pA / Hz1/2
Dark Current @ M=1i 6 8.1 10.0 nA
Total Capacitanceii 2.5 pF
Bandwidth 500 MHz
Breakdown Voltage, VBRiii 44 49 55 V
∆VBR/∆T 30 34 39 mV / K
Minimum Internal Temperature -40 °C
TE cooler ratingiv 1.9 / 1.2 V / A
Temperature Sensing Diode
Voltage and ΔV/Kv0.48
0.50
-2.18 mV / K0.51 V
Maximum Instantaneous Input Powervi5 mW
i Gain normalized from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAivFor VFC1-xKAB devices, package at 298 Kv Sourcing 10 μA, T=298 Kvi 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10
M o d e l s V F C 1- N C A A ( T O - 4 6) a n d V F C 1- N K A B ( T O - 8 w/3 - s t a g e T E C)2 0 0 - m i c r o n A P D, 5 0 0 M H z o n c e r a m i c s u b m o u n t
Deschutes™ Packaged InGaAs APDsVFC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
24
S p e c i f i c a t i o n s
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 500 μm
APD Operating Gain, M 1 10 20
Responsivity at M=1 .66
.91
.73
1.01
.78
1.04
A / W
λ=1064 nm
λ=1550 nm
Excess Noise Factor, F(M,k)3.9
7.9
M=10
M=20
Noise Spectral Density @ M=10 2.74 pA / Hz1/2
Dark Current @ M=1i 40 60 90 nA
Total Capacitanceii 12.5 pF
Bandwidth 90 100 200 MHz
Breakdown Voltage, VBRiii 44 49 55 V
∆VBR/∆T 30 34 39 mV / K
Minimum Internal Temperature -40 °C
TE cooler ratingiv 1.9 / 1.2 V / A
Temperature Sensing Diode
Voltage and ΔV/Kv0.48
0.50
-2.18 mV / K0.51 V
Maximum Instantaneous Input Powervi20 mW
i Gain normalized from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAiv For VFC1-xKAB devices, package at 298 Kv Sourcing 10 μA, T=298 Kvi 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10
M o d e l s V F C 1 - P K A B ( T O - 8 w / 3 - s t a g e T E C )5 0 0 - m i c r o n A P D, 10 0 M H z o n c e r a m i c s u b m o u n t
Packaged InGaAs APDs Deschutes™VFC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
25
V F C 1 - - A -
Device Device Type
Detector Detector Diameter Package Window Revision
V = APD
F = Linear mode
C = Deschutes
APD
1 = Single
Element
E=30 µmH=50 µmJ=75 µm
N=200 µmP=500 µm
C=TO-46K=TO-8 w/3-
stage TE-Cooler
A=FlatB=Epoxy
Fill
Not all combinations of product features are available. Please contact Voxtel for specific ordering information and parts avail-ability.
O r d e r i n g I n f o r m a t i o n f o r V F C - 1 0 0 0 S e r i e s A P D P r o d u c t s
C a u t i o n D u r i n g A P D O p e r a t i o nIf an APD is operated above its breakdown voltage without some form of current protection, it can draw enough cur-rent to permanently damage the device. To guard against this, the user can add either a protective resistor to the bias circuit or a current-limiting circuit in the supporting electronics.
The breakdown voltage of an APD is dependent upon its temperature: the breakdown voltage decreases when the APD is cooled. Consequently, a reverse bias operat-ing point that is safe at room temperature may put the APD into breakdown at low temperature. The approxi-mate temperature dependence of the breakdown voltage is published in the spec sheet for the part, but caution should be exercised when an APD is cooled.
Low-noise readout circuits usually have high impedance, and an unusually strong current pulse from the APD could generate a momentary excessive voltage that is higher
than the readout’s supply voltage, possibly damaging the input to the amplifier. To prevent this, a protective circuit should be connected to divert excessive voltage at the in-puts to a power supply voltage line.
As noted in the specification, another consideration is that the APD gain changes depending on temperature. When an APD is used over a wide temperature range, it is necessary to use some kind of temperature compensation to obtain operation at a stable gain. This can be imple-mented as either regulation of the applied reverse bias according to temperature, feedback temperature control using a thermoelectric cooler (TEC) or other refrigerator, or both.
Upon request, Voxtel will gladly assist customers in imple-menting the proper controls to ensure safe and reliable operation of APDs in their system.
Deschutes™ Packaged InGaAs APDsVFC-1000 Series
Voxtel Literature No. VFC-1000 Series Packaged APDs, Version date: 08/30/2017 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
26
Free-space opticalcommunications
Laser range finding
Optical t ime domainreflectometry
Optical coherence tomogra-phy
Fluorescence measurements,spectroscopy, chromatogra-phy and electrophoresis
Replacement for photomulti-plier tubes
Applications
Siletz™ APD ProductsSingle-Carrier Multiplication APDs (SCM-APD) in hermetic
packages with optional 3-stage TE cooler
Model VFP1-xCAA, VFP1-xKAB Packaged APDs
Voxtel Literature No. VFP1-xCAA / xKAB, Version date: 06/2012 ©Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
VFP-1000 SeriesSiletz™ Packaged APD
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
Hermetically packaged re-duced-noise NIR InGaAs ava-lanche photodiode (R-APD)
75µm and 200µm diameters
Low excess noise and highgain combine for superiorsensitivity not achieved withconventional APDs
950-1700nm spectral re-sponse
Superior sensitivity notachieved with contemporaryAPDs
TO-46 / TO-08 packaging op-tions include a broadband,doublesided AR-coated flatwindow and 3-stage TE-cooler
Custom devices available
Features
Back-illuminated, high-gain, low-excess-noise, single-carrier multipli-cation APDs (SCM-APDs) in hermetic TO-46 or TO-8 packages allow users to easily integrate Voxtel's 950–1700nm response APDs into high-performance electro-optical systems. The TO-8 packages have a 3-stage thermo-electric(TE) cooler which can provide 100°C tem-perature differential from ambient (packages rated down to -40° C.)
Voxtel’s single-carrier multiplication APDs exceed the capabilities of conventional APDs in gain and noise performance. This allows for ac-tive optical systems with better sensitivity, longer range, and lower laser power. Typical APDs achieve high responsivity, but have excess avalanche noise. Voxtel’s SCM-APDs can operate at high gain with low noise, providing a significant advantage.
The Siletz series of SCM-APDs has a very low effective ratio of ion-ization coefficients (keff ~.02), and operates with low excess noise: F(M) = 2 up to gain M = 10, and F(M) <3 up to M ~ 40. The maximum usable linear-mode gain of Siletz SCM-APDs is typically M = 40. By contrast, standard telecom NIR APDs are generally not useful above M = 15, and carry a much greater noise penalty (k = 0.4; F(M) >7 @ M = 15).
Voxtel’s SCM-APDs are ideal for low-light detection, or any other ap-plications requiring sensitivity in the 900–1700nm spectral band. In-tegrating our SCM-APD with a low-noise amplifier produces a receiver with high responsivity, superior noise equivalent power, and better overall sensitivity for high-bandwidth applications.
27
S i l e t z™ S e r i e s P a c k a g e d A P D s
Voxtel Literature No. VFC1-xCAA / xKAB, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
Packaged APD Siletz™VFP-1000 Series
M O D E L V F P1-x C C A /x K A B
Effec ts o f tempera ture on dark cur ren t and breakdown vo l tage o f a 200µm SCM-APD @ M=50 ± 2
Spectral responsivity curve and quantum efficiency
@ gain M=1, T=295K, 200µm SCM-APD
Temperature [K]
Dar
k Cu
rren
t [A
]
225 250 275 300 325 350
10-5
10-6
darkT
Temperature [K]Brea
kdow
n Vo
ltage
[V]
225 250 275 300 325 350
76
74
72
0.0
0.2
0.4
0.6
0.8
1.0
900 1100 1300 1500 1700Wavelength [nm]
Resp
onsi
vity
[A/W
]Voxtel SCM-APD Responsivity
Voxtel SCM-APD QE
0
20
40
60
80
100
28
M O D E L V F P1-x C C A / x K A B
Voxtel Literature No. VFC1-xCAA / xKAB, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
Siletz™ Packaged APDVFP-1000 Series
Mechanical Information
TO-46 Package
TO-8 Package
Pinout1) TEC –4) TEC +9) Temp Sense –
10) Temp Sense + 11) APD Anode (P) 12) APD Cathode (N)
Ø 15.24
5.72
2.87
1.91
9.53
Ø 0.460.79
0.79 1 4
12 11 10 9
25.40 ± 0.64
9.91
7.16 mm
5.38
2.24 ± 0.31
APD Plane
Active area Ø 1.52
Pinout1) APD Cathode2) APD Anode3) Ground, T Sense –4) T Sense +
SIDE VIEWwith cap
TOP VIEWheader only
Ø .019Ø .016
Ø .171Ø .161
Ø .100
.700
.500
.043
.031
.045
.037
Ø .026Ø .020
.072 in183 mm
Ø .212Ø .209
Ø .048Ø .046.010
.007
.006
.000
45° ± 0.5°
.118
.114
.012
.009
.046
.042
.010 max.
1
2
3
4
S i l e t z™ S e r i e s P a c k a g e d A P D s
M e c h a n i c a l In f o r m a t i o n
29
Voxtel Literature No. VFC1-xCAA / xKAB, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
V F P -10 0 0 S e r i e s P a c k a g e d A P D s75 - m i c r o n , 2 . 0 G H z S C M - A P D
M O D E L V F P1-J C A A ( T O - 4 6)
M O D E L V F P1-J K A B
( T O - 8 w/3 - s t a g e T E C)
SpecificationsParameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 75 μm
APD Operating Gain, M 1 20 40
Responsivity at M=1 .66
.91
.73
1.01
.78
1.04
A / W
λ=1064nm
λ=1550nm
Excess Noise Factor, F(M,k)2.0
2.9
M=10
M=40
Noise Spectral Density @ M=10 1.46 pA / Hz1/2
Dark Current @ M=1i 12 23 28 nA
Total Capacitanceii 0.61 pF
Bandwidth 2.0 GHz
Breakdown Voltage, VBRiii 70 74 80 V
∆VBR/∆T 29 mV / K
Minimum Internal Temperature -40 °C
TE-Cooler ratingiv 1.9 / 1.2 V / A
Temperature Sensing Diode
Voltage and ΔV/Kv0.48
0.50
-2.18mV / K0.51 V
Maximum Instantaneous
Input Powervi1 mW
i U n i t y r e f e r e n c e d f r o m M= 1 0 , T = 2 9 8 Ki i M> 3i i i T= 2 9 8 K ; I dark> 0 . 1 m Ai vF o r V F C 1 - x K A B d e v i c e s , p a c k a g e a t 2 9 8 Kv S o u r c i n g 1 0 μ A , T = 2 9 8 Kv i 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0
Packaged APD Siletz™VFP-1000 Series
30
Voxtel Literature No. VFC1-xCAA / xKAB, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
VFP-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
Siletz™ Packaged APD
V F C -10 0 0 S e r i e s P a c k a g e d A P D s2 0 0 - m i c r o n , 3 5 0 M H z S C M - A P D
M O D E L V F P1- N C A A ( T O - 4 6)
M O D E L V F P1- N K A B( T O - 8 w/3 - s t a g e T E C)
SpecificationsParameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 200 μm
APD Operating Gain, M 1 10 20
Responsivity at M=1 .66
.91
.73
1.01
.78
1.04
A / W
λ=1064nm
λ=1550nm
Excess Noise Factor, F(M,k)2.0
2.9
M=10
M=40
Noise Spectral Density @ M=10 3.92 pA / Hz1/2
Dark Current @ M=1i 90 165 200 nA
Total Capacitanceii 1.84 pF
Bandwidth 300 350 400 MHz
Breakdown Voltage, VBRiii 70 74 80 V
∆VBR/∆T 29 mV / K
Minimum Internal Temperature -40 °C
TE-Cooler ratingiv 1.9 / 1.2 V / A
Temperature Sensing Diode
Voltage and ΔV/Kv0.48
0.50
-2.18mV / K0.51 V
Maximum Instantaneous
Input Powervi5 mW
i U n i t y r e f e r e n c e d f r o m M= 1 0 , T = 2 9 8 Ki i M> 3i i i T= 2 9 8 K ; I dark> 0 . 1 m Ai vF o r V F C 1 - x K A B d e v i c e s , p a c k a g e a t 2 9 8 Kv S o u r c i n g 1 0 μ A , T = 2 9 8 Kv i 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0
31
Voxtel Literature No. VFC1-xCAA / xKAB, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
Not all combinations of product features are available. Please contact
Voxtel for specific ordering information and parts availability.
O r d e r i n g I n f o r m a t i o n F o r V F P -10 0 0 S e r i e s A P D P r o d u c t s
C a u t i o n D u r i n g A P D O p e r a t i o n
If an APD is operated above its breakdown voltage without some form of current protection, it can draw enough current to destroy itself. To guard against this, the user can add either a protective resistor to the bias circuit or a current-limiting circuit in the supporting electronics.
The breakdown voltage of an APD is dependent upon its temperature: the breakdown voltage de-creases when the APD is cooled. Consequently, a re-verse bias operating point that is safe at room tem-perature may put the APD into breakdown at low temperature. The approximate temperature depen-dence of the breakdown voltage is published in the spec sheet for the part, but caution should be exer-cised when an APD is cooled.
Low-noise readout circuits usually have high im-pedance, and an unusually strong current pulse from the APD could generate a momentary excessive volt-
age that is higher than the readout’s supply voltage, possibly damaging the input to the amplifier. To pre-vent this, a protective circuit should be connected to divert excessive voltage at the inputs to a power supply voltage line.
As noted in the specification, another consider-ation is that the APD gain changes depending on temperature. When an APD is used over a wide tem-perature range, it is necessary to use some kind of temperature compensation to obtain operation at a stable gain. This can be implemented as either regulation of the applied reverse bias according to temperature, feedback temperature control using a thermoelectric cooler (TEC) or other refrigerator, or both.
Upon request, Voxtel will gladly assist customers in implementing the proper controls to ensure safe and reliable operation of APDs in their system.
V F P 1 - - A -
Device Device Type Detector Diameter Package Window Revision
V=APD F=Linear mode P=Siletz™ 1=Single SCM-APD Element
J=75µmN=200µm
C=TO-46K=TO-8 w/3-stage
TE-Cooler
A=Flat
Packaged APD Siletz™VFP-1000 Series
32
Voxtel Catalog, rev. 07, 10/2016 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
Submounted APD Dies
33
• Low-capacitance high sen-sitivity back-side i l lumi-nated design
• 950–1700 nm response
• Reduced excess noisecompared to conventionalAPDs
• Operation up to a multipl i-cation gain of M=20
• Custom devices availableupon request
• Freespace opticalcommunications
• Laser range finding
• Optical t ime domain re-flectometry
• Optical coherence tomog-raphy
• Fluorescence measure-ments, spectroscopy,chromatography and elec-trophoresis
• Telecommunications
• LADAR/LIDAR
Applications
Features Deschutes™ Submounted APD DiesAvalanche Photodiode w/Submount
Model VFC1-xBXA Series Submounted Dies
Backside-illuminated operation of the DeschutesTM avalanche photodiode (APD) provides both higher responsivity and lower capacitance than compet-ing frontside-illuminated APDs. The APD is custom-engineered for reduced excess noise, which allows this APD to achieve higher sensitivity, better sig-nal-to-noise (SNR) performance, and lower bit error rates (BERs) than con-ventional telecom APDs.
In comparison to conventional telecom InGaAs/InP APDs, which have an excess noise characterized by keff = 0.4, Voxtel’s Deschutes InGaAs/InAlAs APDs, characterized by keff = 0.2, have 40% less excess noise, which allows for lower shot noise over the operating gain of the APD. The increased sensi-tivity of the APD improves system cost, size, weight, and power (C-SWAP) by reducing computational burden and laser power, while increasing standoff range as used in a laser range-finding system.
For ease of integration, these APD die are provided on a ceramic submount with a co-mounted temperature sensor. Smaller footprint submounts with-out the temperature sensor are available.
Deschutes™ Submounted InGaAs APDsVFC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
34
D e s c h u t e s™ S e r i e s N e a r - I n f r a r e d A P D s
Submounted InGaAs APDs Deschutes™
0 1 2 3 4 5 6 7 8 9 10 11 12
5
4
3.5
3
2
1.5
1
4.5
2.5
Gain (M)
Exce
ss N
oise
Fac
tor
(F)
k=0.4 (Telecom APD)k=0.2Deschutes BSI R-APD
200.00 250.00 300.00 350.00Temperature [K ]
M=1
0 D
ark
Cur
rent
[A]
1.E-07
1.E-08
1.E-09
1.E-10
Idark = 6x1015e0.05T
R2 = 0.994
200.00 250.00 300.00 350.00Temperature [K ]
Brea
kdow
n Vo
ltage
(V)
47.50
45.50
45.00
47.00
46.50
44.50
46.00
43.50
44.00
42.50
43.00
Vbr = 0.34T+36.1
R2 = 0.999
Spectral responsivity and quantum efficiencyof 200µm APD @ 298K
Effects of temperature on dark current and break-down voltage of a 200-µm Deschutes APD at M=10
Excess noise of the Deschutes APD, k~0.2
0.0
0.2
0.4
0.6
0.8
1.0
900 1100 1300 1500 1700Wavelength [nm]
Res
pons
ivit
y [A
/W]
Deschutes BSI Responsivity
Deschutes BSI QE
0
20
40
60
80
100
VFC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
35
V F C -10 0 0 S e r i e s : M o d e l V F C 1- E BX A3 0 - m i c r o n A P D, 5 . 0 G H z o n c e r a m i c s u b m o u n t
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 30 μm
Bandwidth 5.0 GHz
APD Operating Gain, M 1 10 20
Receiver Responsivity at M=1.66
.91
.73
1.01
.78
1.04
A/W
λ=1064 nm
λ=1550 nm
Excess Noise Factor, F(M,k) 3.4 / 4.3 M=10, M=15
Noise Spectral Density @ M=10 .37 pA/Hz1/2
Dark Current @ M=1i 0.80 1.08 1.25 nA
Total Capacitanceii 35 fF
Bandwidth 5.0 GHz
Breakdown Voltage, VBRiii 44 49 55 V
ΔVBR/ΔT 30 34 39 mV/K
Temperature Sensing Diode
Voltage and ΔV/K iv 0.480.50
-2.18 mV/K0.51 V
Maximum Instantaneous Input Powerv125 µW
i Gain normalized from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAiv Sourcing 10 µA, T=298 Kv 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10
Deschutes™ Submounted InGaAs APDs
S p e c i f i c a t i o n s
VFC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
36
S p e c i f i c a t i o n s
Submounted InGaAs APDs Deschutes™
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 75 μm
APD Operating Gain, M 1 10 20
Responsivity at M=1 .66
.91
.73
1.01
.78
1.04
A/W
λ=1064 nm
λ=1550 nm
Excess Noise Factor, F(M,k)3.4
4.4
M=10
M=15
Noise Spectral Density @ M=10 0.48 pA/Hz1/2
Dark Current @ M=1i 0.8 1.9 2.5 nA
Total Capacitanceii 0.34 pF
Bandwidth 2.0 2.5 3.0 GHz
Breakdown Voltage, VBRiii 44 49 55 V
∆VBR/∆T 30 34 39 mV/K
Temperature Sensing Diode
Voltage and ΔV/K iv0.48
0.50
-2.18 mV/K0.51 V
Maximum Instantaneous Input Powerv1 mW
i Gain normalized from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAiv Sourcing 10 μA, T=298 Kv 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10
V F C -10 0 0 S e r i e s : M o d e l V F C 1-J BX A75 - m i c r o n A P D, 2 . 5 G H z o n c e r a m i c s u b m o u n t
VFC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
37
S p e c i f i c a t i o n s
Submounted InGaAs APDs Deschutes™ Deschutes™ Submounted InGaAs APDs
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 200 μm
APD Operating Gain, M 1 10 20
Responsivity at M=1 .66
.91
.73
1.01
.78
1.04
A/W
λ=1064 nm
λ=1550 nm
Excess Noise Factor, F(M,k)3.4
4.3
M=10
M=15
Noise Spectral Density @ M=10 0.94 pA/Hz1/2
Dark Current @ M=1i 6 8.1 10.0 nA
Total Capacitanceii 1.47 pF
Bandwidth 250 550 700 MHz
Breakdown Voltage, VBRiii 44 49 55 V
∆VBR/∆T 30 34 39 mV/K
Temperature Sensing Diode
Voltage and ΔV/K iv0.48
0.50
-2.18 mV/K0.51 V
Maximum Instantaneous Input Powerv5 mW
i Gain normalized from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAiv Sourcing 10 μA, T=298 Kv 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10
V F C -10 0 0 S e r i e s : M o d e l V F C 1- N BX A2 0 0 - m i c r o n A P D, 5 5 0 M H z o n c e r a m i c s u b m o u n t
VFC-1000 Series
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
38
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
Submounted InGaAs APDs Deschutes™
S p e c i f i c a t i o n s
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 500 μm
APD Operating Gain, M 1 10 20
Responsivity at M=1 .66
.91
.73
1.01
.78
1.04
A/W
λ=1064 nm
λ=1550 nm
Excess Noise Factor, F(M,k)3.9
7.9
M=10
M=20
Noise Spectral Density @ M=10 2.74 pA/Hz1/2
Dark Current @ M=1i 40 60 90 nA
Total Capacitanceii 11.6 pF
Bandwidth 90 100 200 MHz
Breakdown Voltage, VBRiii 44 49 55 V
∆VBR/∆T 30 34 39 mV/K
Temperature Sensing Diode
Voltage and ΔV/K iv0.48
0.50
-2.18 mV/K0.51 V
Maximum Instantaneous Input Powerv20 mW
i Unity referenced from M=10, T=298 Kii M>3iii T=298 K; Idark>0.1 mAiv Sourcing 10 μA, T=298 Kv 10 ns, 1064 nm signal at a 20 Hz PRF with an APD multiplication gain of M=10
V F C -10 0 0 S e r i e s : M o d e l V F C 1- P BX A5 0 0 - m i c r o n A P D, 10 0 M H z o n c e r a m i c s u b m o u n t
VFC-1000 Series
39
V F C 1 - - X A
Device Device Type
Detector Detector Diameter Package Window Revision
V = APD
F= Linear mode
C = Deschutes
Series
1 = Single
Element
E=30µmH=50µmJ=75µm
N=200µmP=500µm
A=Bare DieB=Ceramic Submount
w/Temp Sensor?= Ceramic Submount
w/out Temp Sensor
X=None
Not all combinations of product features are available. Please contact Voxtel for specific ordering information and parts avail-ability.
O r d e r i n g I n f o r m a t i o n f o r V F C -10 0 0 S e r i e s A P D P r o d u c t s
C a u t i o n D u r i n g A P D O p e r a t i o n
If an APD is operated above its breakdown voltage without some form of current protection, it can draw enough cur-rent to permanently damage the device. To guard against this, the user can add either a protective resistor to the bias circuit or a current-limiting circuit in the supporting electronics.
The breakdown voltage of an APD is dependent upon its temperature: the breakdown voltage decreases when the APD is cooled. Consequently, a reverse bias operat-ing point that is safe at room temperature may put the APD into breakdown at low temperature. The approxi-mate temperature dependence of the breakdown voltage is published in the spec sheet for the part, but caution should be exercised when an APD is cooled.
Low-noise readout circuits usually have high impedance, and an unusually strong current pulse from the APD could generate a momentary excessive voltage that is higher
than the readout’s supply voltage, possibly damaging the input to the amplifier. To prevent this, a protective circuit should be connected to divert excessive voltage at the in-puts to a power supply voltage line.
As noted in the specification, another consideration is that the APD gain changes depending on temperature. When an APD is used over a wide temperature range, it is necessary to use some kind of temperature compensation to obtain operation at a stable gain. This can be imple-mented as either regulation of the applied reverse bias according to temperature, feedback temperature control using a thermoelectric cooler (TEC) or other refrigerator, or both.
Upon request, Voxtel will gladly assist customers in imple-menting the proper controls to ensure safe and reliable operation of APDs in their system.
Submounted InGaAs APDs Deschutes™ Deschutes™ Submounted InGaAs APDsVFC-1000 Series
Voxtel Literature No. VFC-1000 Series, Version date: 07/2017 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
40
Applications
Features High-gain NIR InGaAs single-
carrier-multipl icati ion APD(SCM-APD)
950–1700nm response
High responsivity
Low excess noise and highgain combine for superiorsensitivity not achieved withconventional APDs
Provides high-gain with lownoise, leading the industry insolid-state NIR detection
Custom devices available uponrequest
Free-space opticalcommunications
Laser range finding
Optical t ime domainreflectometry
Optical coherence tomography
Fluorescence measurements,spectroscopy, chromatographyand electrophoresis
Back-illuminated, high-gain, ultra-low-excess-noise SCM-APDs combine the
industry’s highest gain and lowest excess noise, providing unsurpassed
sensitivity in the near infrared spectral range from 950 to 1700nm.
Voxtel’s single-carrier multiplication APDs (SCM-APDs) are photodetectors
that exceed the capabilities of conventional APDs in both gain and noise
performance. This allows for active optical systems with better sensitivity,
longer range, and lower laser power.
APDs achieve high responsivity through internal current gain, but the use-
fulness of this gain is undermined by the accompanying avalanche noise.
Voxtel’s SCM-APDs can be operated at high gain with low noise, providing
a significant advantage.
The Siletz series of SCM-APDs has a low effective ratio of ionization
coefficients (keff ~.02), and can be operated with low excess noise:
F(M)<2 up to M=10, and F(M)<3 up to M~40, with maximum usable linear-
mode gain of Siletz SCM-APDs at typically M=50. Standard telecom NIR
APDs are not useful above M=15, and carry a much greater noise penalty
(k=0.4; F(M)>7 at M=15).
With high gain, low noise and high quantum efficiency, Voxtel’s SCM-APDs
are ideal for low-light-level detection, or other applications that call for
industry-leading sensitivity in the 900–1700 nm spectral band. Coupling
the SCM-APD to a low-noise amplifier produces a receiver with high gain,
superior noise equivalent power, and better sensitivity.
SILETZ™ Submounted APD DieHigh-Gain, Low Excess-Noise NIR Single Carrier
Multiplication APDs (SCM-APDs)
VFP-1000 Series
Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 ©Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
Siletz™ Submounted APD DieVFP-1000 Series
VFP-1000 Series
41
S i l e t z™ S e r i e s A P D P h o t o r e c e i v e r s
Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
Submounted APD Die Siletz™VFP-1000 Series
Effec ts o f tempera ture on dark cur ren t and breakdown vo l tage o f a 200µm SCM-APD @ M=50 ± 2
Spectral responsivity curve and quantum efficiency
@ gain M=1, T=295K, 200µm SCM-APD
Temperature [K]
Dar
k Cu
rren
t [A
]
225 250 275 300 325 350
10-5
10-6
darkT
Temperature [K]Brea
kdow
n Vo
ltage
[V]
225 250 275 300 325 350
76
74
72
0.0
0.2
0.4
0.6
0.8
1.0
900 1100 1300 1500 1700Wavelength [nm]
Resp
onsi
vity
[A/W
]Voxtel SCM-APD Responsivity
Voxtel SCM-APD QE
0
20
40
60
80
100
42
Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
Siletz™ Submounted APD DieVFP-1000 Series
M o d e l V F P1- E B Z B
Specifications
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 30 μm
Bandwidth 4.0 GHz
APD Operating Gain, M 1 20 40
Responsivity at M=1 .66
.91
.73
1.01
.78
1.04
A/W
λ=1064nm
λ=1550nm
Excess Noise Factor, F(M,k)2.0
2.9
M=10
M=40
Noise Spectral Density @ M=10 .78 pA/Hz1/2
Dark Current @ M=1i 6.6 nA
Total Capacitanceii 35 pF
Breakdown Voltage, VBRiii 70 74 80 V
ΔVBR/ΔT 29 mV/K
Temperature Sensing Diode
Voltage and ∆V/Kiv0.48
0.50
-2.18 mV/K0.51 V
Maximum Instantaneous
Input PowerV125 µW
i U n i t y r e f e r e n c e d f r o m M= 1 0 , T = 2 9 8 Ki i M > 3i i i T= 2 9 8 K , I d a r k> 0 . 1 m Ai v S o u r c i n g 1 0 µ A , T = 2 9 8 Kv 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0
V F P -10 0 0 S e r i e s N e a r - I n f r a r e d S C M - A P D
3 0 µ m , 4 . 0 G H z
APDTEMP SENSE
E EB
C
1520 µm
ANODE
370 µm
CATHODECATHODE
43
Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
Submounted APD Die Siletz™VFP-1000 Series
M o d e l V F P1-J B Z B
Specifications
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 75 μm
Bandwidth 2.3 2.7 GHz
APD Operating Gain, M 1 20 40
Responsivity at M=1 .66
.91
.73
1.01
.78
1.04
A/W
λ=1064nm
λ=1550nm
Excess Noise Factor, F(M,k)2.0
2.9
M=10
M=40
Noise Spectral Density @ M=10 1.46 pA/Hz1/2
Dark Current @ M=1i 12 23 28 nA
Total Capacitanceii 0.23 pF
Breakdown Voltage, VBRiii 70 74 80 V
ΔVBR/ΔT 29 mV/K
Temperature Sensing Diode
Voltage and ∆V/Kiv0.48
0.50
-2.18 mV/K0.51 V
Maximum Instantaneous
Input PowerV1 µW
i U n i t y r e f e r e n c e d f r o m M= 1 0 , T = 2 9 8 Ki i M > 3i i i T= 2 9 8 K , I d a r k> 0 . 1 m Ai v S o u r c i n g 1 0 µ A , T = 2 9 8 Kv 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0
V F P -10 0 0 S e r i e s N e a r - I n f r a r e d S C M - A P D
75 µ m , 2 . 3 G H z
APDTEMP SENSE
E EB
C
1520 µm
ANODE
370 µm
CATHODECATHODE
44
Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
Siletz™ Submounted APD DieVFP-1000 Series
M o d e l V F P1- N B Z B
Specifications
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 200 μm
Bandwidth 300 350 400 MHz
APD Operating Gain, M 1 20 40
Responsivity at M=1 .66
.91
.73
1.01
.78
1.04
A/W
λ=1064nm
λ=1550nm
Excess Noise Factor, F(M,k)2.0
2.9
M=10
M=40
Noise Spectral Density @ M=10 3.92 pA/Hz1/2
Dark Current @ M=1i 90 165 200 nA
Total Capacitanceii 1.47 pF
Breakdown Voltage, VBRiii 70 74 80 V
ΔVBR/ΔT 29 mV/K
Temperature Sensing Diode
Voltage and ∆V/Kiv0.48
0.50
-2.18 mV/K0.51 V
Maximum Instantaneous
Input PowerV5 µW
i U n i t y r e f e r e n c e d f r o m M= 1 0 , T = 2 9 8 Ki i M > 3i i i T= 2 9 8 K , I d a r k> 0 . 1 m Ai v S o u r c i n g 1 0 µ A , T = 2 9 8 Kv 1 0 n s , 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0
V F P -10 0 0 S e r i e s N e a r - I n f r a r e d S C M - A P D
2 0 0 µ m , 3 5 0 M H z
APDTEMP SENSE
E EB
C
1520 µm
ANODE
370 µm
CATHODECATHODE
45
Ordering Information For VFP-1000 Series APD Products
Voxtel Literature No. VFP1-xBZB, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
Not all combinations of product features are available. Please contact
Voxtel for specific ordering information and parts availability.
C a u t i o n D u r i n g A P D O p e r a t i o n
If an APD is operated above its breakdown voltage without some form of current protection, it can draw enough current to destroy itself. To guard against this, the user can add either a protective resistor to the bias circuit or a current-limiting circuit in the supporting electronics.
The breakdown voltage of an APD is dependent upon its temperature: the breakdown voltage de-creases when the APD is cooled. Consequently, a re-verse bias operating point that is safe at room tem-perature may put the APD into breakdown at low temperature. The approximate temperature depen-dence of the breakdown voltage is published in the spec sheet for the part, but caution should be exer-cised when an APD is cooled.
Low-noise readout circuits usually have high im-pedance, and an unusually strong current pulse from the APD could generate a momentary excessive volt-
age that is higher than the readout’s supply voltage, possibly damaging the input to the amplifier. To pre-vent this, a protective circuit should be connected to divert excessive voltage at the inputs to a power supply voltage line.
As noted in the specification, another consider-ation is that the APD gain changes depending on temperature. When an APD is used over a wide tem-perature range, it is necessary to use some kind of temperature compensation to obtain operation at a stable gain. This can be implemented as either regulation of the applied reverse bias according to temperature, feedback temperature control using a thermoelectric cooler (TEC) or other refrigerator, or both.
Upon request, Voxtel will gladly assist customers in implementing the proper controls to ensure safe and reliable operation of APDs in their system.
Submounted APD Die Siletz™VFP-1000 Series
V F P 1 - B Z B
Device Device Type Detector Diameter Package Window Revision
V=APD F=Linear mode P=Siletz 1=Single SCM APD Element
E=30µmJ=75µm
N=200µm
B=Ceramic Submount
Z=None
46
Voxtel Catalog, rev. 07, 10/2016 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
Photoreceiver Support Module
47
Electronics Support ModuleWX Series
Electronics Support Module (ESM) for Avalanche Photodiode (APD) ReceiversEases APD receiver system integration without a big price tag or time draw.
Voxtel designed the Electronics Support Module (ESM) for flexibility: The ESM allows users to operate Voxtel’s APD technology without performing electronics customization.
Voxtel’s WX series ESM can house any of Voxtel’s TO-8 packaged APD receivers or APD laser rangefinding (LRF) receivers. A 5V system power supply provides power to the APD, transimpedance amplifier (TIA) and thermo-electrical cooler (TEC), where applicable.1
• Flexible: Use the ESM as an optical receiver module (ORM) forprototyping capability.
• Cool: Faceplate provides a heat sink designed to cool Voxtel’s line ofthermoelectrically cooled APDs.
• Solid: Dissipative linings suppress high-frequency osscillations,especially with large-active-area, wide-bandwidth receivers.
Voxtel also offers:
• APD receiver support electronics boards. • Custom electronics design. • APD object relation mapping (ORM) for original equipment
manufacturers (OEMs).
Features Easy accomodat ion for temperature
changes using bias adjustmentcontrol
Dif ferent ia l output s ignalmonitor ing
Inspect, test, and character izat ionof APD receivers
Prototypic capabi l i ty when used asan opt ical receiver module (ORM).
Cool ing
Suppression of h igh-frequencyossic i l lat ions
Fields & Applications Protyping
Laser range f inding
Free-space opt ica l communicat ions
Opt ical t ime domain ref lectometry
Opt ical coherence tomography
Fluorescence measurements,spectroscopy, chromatography andelectrophoresis
Telecommunicat ions
LADAR/LIDAR
1 Different ESM models are available for TO-8 and TEC TO-8 packaged APDs. When ordered with a receiver, support modules are set to the appropriate voltage supply level for the receiver. APD bias can be adjusted using a potentiometer and monitored through a BNC connection on the back plate.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006
www.voxtel-inc.com, T 971.223.5646, F 503.296.2862 48
Electronics Support ModuleWX Series
Specifications
General
APD Mounting TO-8 mounted with brackets to socket on faceplate
Power Source AC-DC converter: 5V, 3A in (from 110V AC)
Grounding via power source and/or grounding plug
Internal current limit ~20 µA (Users who wish to change the voltage or current limit of their module may contact Voxtel for more information.)
Operating Temperature 300 K
TEC Cooling Temperature 275 K
Cooling Power (TSENSE V) 0.540 V
Inputs
V+ APD ADJ. APD Bias Control Input: Input from external potentiometer (not provided)
+ V IN 3A Voltage Input and Ground: 5V, 3A in (from 110V AC)
Outputs
AMPLIFIER OUT1 AC-coupled LVDS signals through (2) parallel capacitors:1) 2.2 μF; and 2) 100 pF; SMA connection to coaxial cable (not provided)
GND Ground
V+ APD MONITOR APD Bias Monitor: Output to 10-MΩ probe (not provided)
1 An optional low-pass filter can also be included at the module’s output.
Circuitry, Inputs and Outputs
TEC –
TEC +
APD-TIA Receiver (TO-8)
APD Receiver Support Module
APD Bias
APD Bias Monitor
APD Bias Control
5V, 3A in; GND
Out 1
Ground
Out 2
TSense+
TSense–
VCC +3.3V
+APD
Gnd
Out+Out–
Gnd
Gnd
RTIA Bias
TEC Control
(from 110 V AC)
+
+ .
+ 3
Electronic Electronics Support Module Block Diagram with Circuitry, Inputs and Outputs (TEC TO-8 package shown):
The receiver sends differential outputs to the ESM. These outputs from the receiver are passed through the support module to SMA connectors on the back
plate.
Mechanical
5.0005.500
0
.474
1.522
2.147
2.772
3.4603.847
2x Ø .281 Thru All
0 .380
.468
3.45
0
4.22
2
3.847
4x Ø .089 Thru All4–40 UNC –2B Thru All
User-available holes
2.08
9
.750 0
.750
2.08
9
1.166
1.181
4x Rubber Feet
1.1051.041
0
1.105
Voxtel Literature No. ESM for APD Receivers, 13Apr2018 ©
Voxtel makes no warranty or representation regarding its products’ specific
application suitability and may make changes to the products described without notice.
49
©Voxtel, Inc. 2016
Voxtel, Inc.
15985 NW Schendel Ave., #200 Beaverton, OR 97006 www.voxtel-inc.com
T: (971) 223-5646 F: (503) 296-2862
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