[Type text] [Type text] Dr. D. V. Kamath
MOS Basics
Characteristics BJT MOS
Current conduction
Bipolar
Unipolar
Noise MOSFETs are less noisy than BJTs. Hence, MOSFETs are more
suitable for signal processing applications
Source Type
Current Controlled Current Source
(CCCS)
Voltage Controlled Current
Source (VCCS)
Input Impedance
Low
High
Characteristic
parameter
ฮฒ (โ๐น๐ธ)
๐๐
Current
๐ผ๐ = ๐ผ๐ ๐๐๐ต๐ธ ๐๐โ
๐ผ๐๐ =ยต๐๐ถ๐๐ฅ
2
๐
๐ฟ(๐๐๐ โ ๐๐กโ)
2
Transconductance
๐๐ = ๐ผ๐ ๐๐๐โ
๐๐ = โ2๐ฝ๐ผ๐๐
Current driving
capability
High Low
Package density Low High
Bandwidth
MOSFETS have higher bandwidth compared to BJTs. It is relatively easy to control device geometries and scaling in MOS
devices when compared with BJT circuits.
***
[Type text] [Type text] Dr. D. V. Kamath
NMOS Device
LD (lateral diffusion) - Level 2 SPICE model parameter
DL (delta length) - BSIM model parameter ***
MOS parameters
Parameter Description Equation Unit
ยต๐ Surface mobility of carrier - cm2 Vsecโ
๐ ๐ฟโ Channel aspect ratio - -
๐ถ๐ Gate-to-channel capacitance ๐ถ๐ =
ษ๐๐๐ ษ๐๐๐ฟ
๐ท
pF
๐ถ๐๐ฅ Gate capacitance per unit area ๐ถ๐๐ฅ =๐ถ๐
๐๐ฟ=
ษ๐๐๐ ษ๐
๐ท
๐๐น ยต๐2โ
๐พ๐ Process transconductance
parameter
๐พ๐ = ยต๐๐ถ๐๐ฅ
= ยต๐
ษ๐๐๐ ษ๐
๐ท
๐ด ๐2โ
ฮฒ Beta ๐ฝ๐ = ๐พ๐
๐
๐ฟ
๐ด ๐2โ
๐ฅ๐ Overdrive potential ๐ฅ๐ = ๐๐๐ โ ๐๐กh
V
[Type text] [Type text] Dr. D. V. Kamath
Enhancement-type nMOS transistor in non-conducting condition
***
Enhancement-type nMOS transistor with ๐ฝ๐ฎ๐บ > ๐ฝ๐ป๐ฏ and ๐ฝ๐ซ๐บ = 0
***
Enhancement-type nMOS transistor with ๐ฝ๐ฎ๐บ > ๐ฝ๐ป๐ฏ and a small ๐ฝ๐ซ๐บ
***
[Type text] [Type text] Dr. D. V. Kamath
Increasing VDS
causes the channel to acquire a tapered shape
***
MOS drain characteristics
Drain characteristics of depletion type NMOS
[Type text] [Type text] Dr. D. V. Kamath
Drain characteristics of enhancement type NMOS ***
Ids versus Vds relationship
Charge induced below the thinox layer between drain and source is dependent on Vgs
Drain current Ids is
thus
dependent on both Vds and Vgs
[Type text] [Type text] Dr. D. V. Kamath
Electron transit time computation
Ids versus Vds relationship for MOS in non-saturation region
Voltage along the channel varies linearly with distance X from the source due to the IR
drop in the channel, the average value is Vds/2
Effective gate voltage is Vgs -
Vth
[Type text] [Type text] Dr. D. V. Kamath
Alternate expressions of Ids for MOS in non-saturation region
[Type text] [Type text] Dr. D. V. Kamath
Ids expression for MOS in saturation region
Substituting limiting condition Vds = Vgs โVth
in (1), we get Ids expression for saturation region
Drain current equations for NMOS
Region of operation Equation Condition
Cut-off
๐ผ๐๐ ๐ = 0
๐๐๐ ๐ < ๐๐กโ๐
Ohmic
๐ผ๐๐ ๐ =๐ฝ๐
2๐๐๐ {2(๐๐๐ ๐ โ ๐๐กโ๐) โ ๐๐๐ ๐}
๐๐๐ ๐ > ๐๐กโ๐
๐๐๐ ๐ < ๐๐๐ ๐ โ ๐๐กโ๐
Saturation
๐ผ๐๐ ๐ =๐ฝ๐
2(๐๐๐ ๐ โ ๐๐กโ๐)
2
๐๐๐ ๐ > ๐๐กโ๐
๐๐๐ ๐ โฅ ๐๐๐ ๐ โ ๐๐กโ๐
Drain current equations for PMOS
Region of
operation
Equation Condition
Cut-off
๐ผ๐๐ ๐ = 0
๐๐ ๐๐ < |๐๐กโ๐| or
|๐๐๐ ๐| < |๐๐กโ๐|
Ohmic ๐ผ๐ ๐๐ =
๐ฝ๐
2๐๐ ๐{2(๐๐ ๐๐ โ |๐๐กโ๐|) โ ๐๐ ๐๐}
or
โ๐ผ๐๐ ๐ = ๐ผ๐ ๐๐ =๐ฝ๐
2๐๐๐ ๐{2(๐๐๐ ๐ โ ๐๐กโ๐)
โ ๐๐๐ ๐}
|๐๐๐ ๐| > |๐๐กโ๐|
|๐๐๐ ๐| < |๐๐๐ ๐| โ |๐๐กโ๐|
[Type text] [Type text] Dr. D. V. Kamath
Saturation ๐ผ๐ ๐๐ =
๐ฝ๐
2(๐๐ ๐๐ โ |๐๐กโ๐|)
2
or
โ๐ผ๐๐ ๐ = ๐ผ๐ ๐๐ =๐ฝ๐
2(๐๐๐ ๐ โ ๐๐กโ๐)
2
|๐๐๐ ๐| > |๐๐กโ๐|
|๐๐๐ ๐| > |๐๐๐ ๐| โ |๐๐กโ๐|
***
Deep Ohmic region
Region of
operation
Description Equation
Deep ohmic
๐ผ๐๐ = ๐ฝ(๐๐๐ โ ๐๐กโ)๐๐๐
๐ ๐๐ =1
๐ฝ(๐๐๐ โ๐๐กโ)
๐๐๐ > ๐๐กโ
๐๐ท๐ โช 2(๐๐บ๐ โ ๐๐๐ป)
***
MOS transconductance
๐๐ =๐๐ผ๐ท
๐๐๐บ๐|๐๐๐ ,๐๐๐๐ ๐ก
๐ผ๐๐ =๐ฝ
2(๐๐๐ โ ๐๐กโ)
2 ๐๐๐ ๐๐๐ ๐๐ ๐ ๐๐ก๐ข๐๐๐ก๐๐๐
๐๐ = ๐ฝ(๐๐๐ โ ๐๐กโ)
๐๐ = โ2๐ฝ๐ผ๐๐
***
[Type text] [Type text] Dr. D. V. Kamath
Basic MOS small-signal model (at low frequencies)
๐๐ = ๐๐๐ฃ๐๐
MOS device is basically characterized by transconductance ๐๐
MOS device is modeled by VCCS
MOS output conductance ๐๐ ๐
The output conductance ๐๐๐ is expressed as
gds =ฮดIds
ฮดVds= ฮป๐ผ๐๐
ฮป ฮฑ 1
L and Ids ฮฑ
1
L
gds ฮฑ 1
L2
The output conductance ๐๐๐ is strongly dependent on the channel length
MOS transistor figure of merit ๐๐ถ
The parameter ๐๐ is used as a measure of frequency response or switching speed ฯO = 1 ฯsdโ
ฯO =gm
Cg=
ยตnCoxWL
(Vgs โ Vth)
CoxWL=
ยตn(Vgs โ Vth)
L2=
1
ฯsd
A fast switching speed requires that ๐๐ be as high as possible
The switching speed depends on effective gate voltage and on carrier mobility and inversely as
the square of channel length
***
vm
v
G D
ids
v g
- -
gs
+
S
+
dsgs
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