7/27/2019 IKA10N60T Data Sheets
1/13
7/27/2019 IKA10N60T Data Sheets
2/13
IKA10N60T
TrenchStop Series
Power Semiconductors 2 Rev. 2 Oct-04
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction case
Rt h J C TO-220 FullPak 5
Diode thermal resistance,
junction case
Rt h J C D TO-220 FullPak 5.8
Thermal resistance,
junction ambient
Rt h J A TO-220 FullPak 80
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
ValueParameter Symbol Conditions
min. typ. max.Unit
Static CharacteristicCollector-emitter breakdown voltage V( B R ) C E S VG E=0V, IC=0.2mA 600 - -
Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC=10A
Tj=25C
Tj=175C
-
-
1.5
1.8
2.05
Diode forward voltage VF VG E=0V, IF=10A
Tj=25C
Tj=175C
-
-
1.6
1.6
2.05
-
Gate-emitter threshold voltage VG E ( t h ) IC=0.3mA,VCE=VG E 4.1 4.6 5.7
V
Zero gate voltage collector current IC E S VC E=600V ,VG E=0V
Tj=25C
Tj=175C
-
-
-
-
40
1000
A
Gate-emitter leakage current IG E S VC E=0V,VGE =20V - - 100 nA
Transconductance gf s VC E=20V, IC=15A - 6 - S
Integrated gate resistor RG i n t none
Dynamic Characteristic
Input capacitance Ci s s - 551 -
Output capacitance Co s s - 40 -
Reverse transfer capacitance Cr ss
VC E=25V,
VG E=0V,
f=1MHz - 17 -
pF
Gate charge QG ate VC C=480V, IC=10A
VG E=15V
- 62 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE TO-2 20-3 -31 - 7 - nH
Short circuit collector current1)
IC ( S C ) VG E=15V,tS C5sVC C = 400V,
Tj = 25C
- 100 - A
1)Allowed number of short circuits: 1s.
7/27/2019 IKA10N60T Data Sheets
3/13
IKA10N60T
TrenchStop Series
Power Semiconductors 3 Rev. 2 Oct-04
Switching Characteristic, Inductive Load, at Tj=25 C
ValueParameter Symbol Conditions
min. typ. max.Unit
IGBT CharacteristicTurn-on delay time td ( o n ) - 12 -
Rise time tr - 8 -
Turn-off delay time td ( o f f ) - 215 -
Fall time tf - 38 -
ns
Turn-on energy Eo n - 0.16 -
Turn-off energy Eo f f - 0.27 -
Total switching energy Et s
Tj=25C, VC C=400V, IC=10A,VG E=0/15V,
RG=23 ,
L2 )
=60nH,
C2 )
=40pFEnergy losses includetail and diodereverse recovery. - 0.43 -
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time tr r - 115 - ns
Diode reverse recovery charge Q r r - 0.38 - CDiode peak reverse recovery current Ir r m - 10 - A
Diode peak rate of fall of reverserecovery current during tb
dir r/dt
Tj=25C,
VR=400V, IF=10A,diF/dt=880A/ s
- 680 - A/s
Switching Characteristic, Inductive Load, at Tj=175 C
ValueParameter Symbol Conditions
min. typ. max.Unit
IGBT Characteristic
Turn-on delay time td ( o n ) - 10 -
Rise time tr - 11 -
Turn-off delay time td ( o f f ) - 233 -
Fall time tf - 63 -
ns
Turn-on energy Eo n - 0.26 -
Turn-off energy Eo f f - 0.35 -
Total switching energy Et s
Tj=175C, VC C=400V, IC=10A,
VG E=0/15V,RG= 23
L1 )
=60nH,
C1 )
=40pFEnergy losses includetail and diodereverse recovery. - 0.61 -
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time tr r - 200 - ns
Diode reverse recovery charge Q r r - 0.92 - C
Diode peak reverse recovery current Ir r m - 13 - A
Diode peak rate of fall of reverse
recovery current during tb
dir r/dt
Tj=175C
VR=400V, IF=10A,
diF/dt=880A/ s
- 390 - A/s
2)Leakage inductance Land Stray capacity C due to dynamic test circuit in Figure E.
1)Leakage inductance Land Stray capacity C due to dynamic test circuit in Figure E.
7/27/2019 IKA10N60T Data Sheets
4/13
IKA10N60T
TrenchStop Series
Power Semiconductors 4 Rev. 2 Oct-04
IC,COLLECTORCURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
5A
10 A
15 A
20 A
25 A
30 AT
C=110CTC=80C
IC,COLLECTORCURRENT
1V 10V 100V 1000V
0,1A
1A
10A
50s
500s
5ms
DC
tp=1s
20s
100ms
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function ofswitching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 23)
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj175C;VGE=15V)
Ptot,POWERDISSIPATION
25C 50C 75C 100C 125C 150C0W
5W
10 W
15 W
20 W
25 W
30 W
IC,COLLECTORCURRENT
25C 75C 125C0A
2A
4A
6A
8A
10A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function ofcase temperature
(Tj 175C)
Figure 4. Collector current as a function ofcase temperature
(VGE 15V, Tj 175C)
Ic
Ic
7/27/2019 IKA10N60T Data Sheets
5/13
IKA10N60T
TrenchStop Series
Power Semiconductors 5 Rev. 2 Oct-04
IC,COLLECTORCURRENT
0V 1V 2V 3V 4V
0A
5A
10 A
15 A
20 A
25 A
30 A
15 V
6V
8V
10 V
12 V
VGE=20V
IC,COLLECTORCURRENT
0V 1V 2V 3V 4V 5V
0A
5A
10 A
15 A
20 A
25 A
30 A
15 V
6V
8V
10 V
12 V
VGE=20V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic(Tj = 25C)
Figure 6. Typical output characteristic(Tj = 175C)
IC,COLLECTORCURRENT
0V 2V 4V 6V 8V 10V0A
5A
10A
15A
20A
25A
25C
TJ=175C
VCE(sat),
COLLECTOR-EMITTSATURATIONVOLTAGE
-50C 0C 50C 100C 150C0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
IC=10A
IC=20A
IC=5 A
VGE, GATE-EMITTERVOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic(VCE=20V)
Figure 8. Typical collector-emittersaturation voltage as a function ofjunction temperature(VGE = 15V)
7/27/2019 IKA10N60T Data Sheets
6/13
IKA10N60T
TrenchStop Series
Power Semiconductors 6 Rev. 2 Oct-04
t,SWITCHINGTIMES
0A 5A 10A 15A 20A
1n s
10ns
100ns
tr
td(on)
tf
td(off)
t,SWITCHINGTIMES
10 20 30 40 50
1n s
10ns
100ns
tr
td(on)
tf
td(off)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as afunction of collector current(inductive load, TJ=175C,VCE = 400V, VGE = 0/15V, RG = 23,Dynamic test circuit in Figure E)
Figure 10. Typical switching times as afunction of gate resistor(inductive load, TJ = 175C,VCE= 400V, VGE = 0/15V, IC = 10A,Dynamic test circuit in Figure E)
t,SWITCHINGTIMES
25C 50C 75C 100C 125C 150C
1n s
10ns
100ns
tr
td(on)
tf
td(off)
VGE(th),GATE-EMITTTRSHOLDVOLTAGE
-50C 0C 50C 100C 150C0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as afunction of junction temperature(inductive load, VCE = 400V,VGE = 0/15V, IC = 10A, RG=23,Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage asa function of junction temperature(IC = 0.3mA)
7/27/2019 IKA10N60T Data Sheets
7/13
IKA10N60T
TrenchStop Series
Power Semiconductors 7 Rev. 2 Oct-04
E,SWITCHINGENERGYLOSSES
0A 5A 10A 15A0,0mJ
0,2mJ
0,4mJ
0,6mJ
0,8mJ
1,0mJE
ts*
Eoff
*) Eon
an d Etsinclude losses
due to diode recovery
Eon
*
E,SWITCHINGENERGYLOSSES
10 20 30 40 500,0 mJ
0,2 mJ
0,4 mJ
0,6 mJ
0,8 mJ
Ets*
Eon
*
*) Eon
and Ets
include losses
due to diode recovery
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy lossesas a function of collector current(inductive load, TJ = 175C,VCE = 400V, VGE = 0/15V, RG = 23,Dynamic test circuit in Figure E)
Figure 14. Typical switching energy lossesas a function of gate resistor(inductive load, TJ = 175C,VCE = 400V, VGE = 0/15V, IC = 10A,Dynamic test circuit in Figure E)
E,SWITCHINGENERGYLOSSES
50C 100C 150C0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
0,5mJ
0,6mJ
Ets*
Eon
*
*) Eon
and Ets
include losses
due to diode recovery
Eoff
E,SWITCHINGENERGYLOSSES
300V 350V 400V 450V 500V 550V0,0mJ
0,2mJ
0,4mJ
0,6mJ
0,8mJ
Ets*
Eon
*
*) Eon
an d Ets
include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy lossesas a function of junctiontemperature(inductive load, VCE = 400V,VGE = 0/15V, IC = 10A, RG = 23,Dynamic test circuit in Figure E)
Figure 16. Typical switching energy lossesas a function of collector emittervoltage(inductive load, TJ = 175C,VGE = 0/15V, IC = 10A, RG = 23,Dynamic test circuit in Figure E)
7/27/2019 IKA10N60T Data Sheets
8/13
IKA10N60T
TrenchStop Series
Power Semiconductors 8 Rev. 2 Oct-04
VGE,GATE-EMITTERVOLTAGE
0nC 20nC 40nC 60nC0V
5V
10 V
15 V
480V120V
c,CAPACITANCE
0V 10V 20V
10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge(IC=10 A)
Figure 18. Typical capacitance as a functionof collector-emitter voltage(VGE=0V, f= 1 MHz)
IC(sc),shortcircuitCOLLECTORCURREN
T
12V 14V 16V 18V0A
25A
50A
75A
100A
125A
150A
tSC,SHORTCIRCUITWITHSTANDTIME
10V 11V 12V 13V 14V0 s
2 s
4 s
6 s
8 s
10s
12s
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collectorcurrent as a function of gate-emitter voltage
(VCE 400V, Tj 150C)
Figure 20. Short circuit withstand time as afunction of gate-emitter voltage(VCE=600V, start at TJ=25C,TJmax
7/27/2019 IKA10N60T Data Sheets
9/13
IKA10N60T
TrenchStop Series
Power Semiconductors 9 Rev. 2 Oct-04
ZthJC,TRANSIENTTHERMALRESISTANCE
10s 100s 1ms 10ms100ms 1s 10s
-2K/W
-1K/W
00K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
ZthJC,TRANSIENTTHERMALRESISTANCE
10s 100s 1ms 10ms100ms 1s 10s10 -2K/W
10-1
K/W
100K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance(D = tp/ T)
Figure 22. Diode transient thermalimpedance as a function of pulsewidth(D=tP/T)
trr,
REVERSERECOVERYTIME
200A/s 400A/s 600A/s 800A/s0ns
50ns
100ns
150ns
200ns
250ns
300ns
TJ=25C
TJ=175C
Qrr,REVERSERECOVERYCHARGE
200A/s 400A/s 600A/s 800A/s0,0C
0,1C
0,2C
0,3C
0,4C
0,5C
0,6C
0,7C
0,8C
TJ=25C
TJ=175C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time asa function of diode current slope(VR=400V, IF=10A,Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery chargeas a function of diode currentslope(VR = 400V, IF = 10A,Dynamic test circuit in Figure E)
R, ( K / W ) , ( s )
1.596 4.622 6
1.985 1.288
0.5623 5.066*10-2
0.3324 4.152*10-3
0.3531 6.059*10-4
0.1730 7.863*10-5
C1=1 /R1
R1 R2
C2=2 /R2
R, ( K / W ) , ( s )
1.418 5.068 6
2.125 1.416
0.5890 6.455*10-2
0.5424 5.732*10-3
0.6311 1.019*10-3
0.5061 1.499*10-4
C1=1 /R1
R1 R2
C2=2/R2
7/27/2019 IKA10N60T Data Sheets
10/13
IKA10N60T
TrenchStop Series
Power Semiconductors 10 Rev. 2 Oct-04
Irr,
REVERSERECOVERYCURRENT
200A/s 400A/s 600A/s 800A/s0A
2A
4A
6A
8A
10 A
12 A
14 A
TJ=25C
TJ=175C
dirr/
dt,DIODEPEAKRATEOFFALL
OFREVERSERECOVERYCURRENT
400A/s 600A/s 800A/s0A/s
-100A/s
-200A/s
-300A/s
-400A/s
-500A/s
-600A/s
-700A/s TJ=25C
TJ=175C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery currentas a function of diode currentslope(VR = 400V, IF = 10A,Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall ofreverse recovery current as afunction of diode current slope(VR=400V, IF=10A,Dynamic test circuit in Figure E)
IF,FORWARDCURRENT
0V 1V 2V0A
10 A
20 A
30 A
175C
TJ=25C
VF,FORWARDVOLTAGE
-50C 0C 50C 100C 150C0,0V
0,5V
1,0V
1,5V
2,0V
10 A
IF=20A
5A
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current asa function of forward voltage
Figure 28. Typical diode forward voltage as afunction of junction temperature
7/27/2019 IKA10N60T Data Sheets
11/13
IKA10N60T
TrenchStop Series
Power Semiconductors 11 Rev. 2 Oct-04
P-TO220-3-31
dimensions
symbol [mm] [inch]
min max min maxA 10.37 10.63 0.4084 0.4184
B 15.86 16.12 0.6245 0.6345
C 0.65 0.78 0.0256 0.0306
D 2.95 typ. 0.1160 typ.
E 3.15 3.25 0.124 0.128
F 6.05 6.56 0.2384 0.2584
G 13.47 13.73 0.5304 0.5404
H 3.18 3.43 0.125 0.135
K 0.45 0.63 0.0177 0.0247
L 1.23 1.36 0.0484 0.0534
M 2.54 typ. 0.100 typ.
N 4.57 4.83 0.1800 0.1900
P 2.57 2.83 0.1013 0.1113
T 2.51 2.62 0.0990 0.1030
Please refer to mounting instructions (application note AN-TO220-3-31-01)
7/27/2019 IKA10N60T Data Sheets
12/13
IKA10N60T
TrenchStop Series
Power Semiconductors 12 Rev. 2 Oct-04
Figure A. Definition of switching times
Figure B. Definition of switching losses
Ir r m
90% Ir r m
10% Ir r m
di /dt F
tr r
IF
i,v
tQS
QF
tS
tF
VR
di /dt r r
Q =Q Qr r S F
+
t =t t r r S F
+
Figure C. Definition of diodesswitching characteristics
p(t)1 2 n
T (t)j
1
1
2
2
n
n
TC
r r
r
r
rr
Figure D. Thermal equivalentcircuit
Figure E. Dynamic test circuit
Leakage inductance L =60nHand Stray capacity C =40pF.
7/27/2019 IKA10N60T Data Sheets
13/13
IKA10N60T
TrenchStop Series
Published byInfineon Technologies AG,Bereich Kommunikation
St.-Martin-Strasse 53,D-81541 Mnchen Infineon Technologies AG 2004All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest InfineonTechnologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in questionplease contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express writtenapproval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure ofthat life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices orsystems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protecthuman life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Top Related