External Use
TM
Efficient Thermal Management
for Motor Control
S E P T . 2 0 1 5
Pramit Nandy | MV Applications Engineer
Tom Zemites | Product Line Manager
AMF-ACC-T1703
TM
External Use 1
Agenda
• Introduction
• Factors of power dissipation in motor drivers
• Calculate an estimate of power dissipation
• Experimental determination of power dissipation
• Data sheet and thermal model tools
• Thermal management current limit methods
• Comparison of current verses new (MC33931 vs
MC33HB2001)
• Live demonstration of current limits (MC33931 vs
MC33HB2001)
• Product highlight of new motor drive products for
automotive applications
TM
External Use 2
We Are a Global Leader in Embedded Processing Solutions
Customer Teams
Microcontrollers
Digital
Networking
Automotive
Microcontrollers
RF
Analog &
Sensors
Manufacturing
Expertise
>50 Year Legacy
>6,000 Patent Families*Five Core Product Groups Four Primary Markets
Networking Consumer
IndustrialAutomotive
* a set of patents taken in various countries to protect a single invention
TM
External Use 3
Freescale Senior Leadership Team
James BatesAnalog/Sensors
Bob ConradAutomotive MCU
Tom DeitrichDigital Networking
Geoff LeesMicrocontrollers
Paul HartRF
David ReedManufacturing Operations
Dan DurnFinance and
Information Technology
Jennifer Wuamett Legal
Jeff ElsonHuman Resources
and Security
Brandon TolanyGlobal Sales & Marketing
Gregg LowePresident & CEO
Product Groups OperationsStaff
http://media.freescale.com/phoenix.zhtml?c=196520&p=irol-govBio&ID=225622http://media.freescale.com/phoenix.zhtml?c=196520&p=irol-govBio&ID=225622
TM
External Use 4
James BatesSenior Vice President &
General Manager
Analog & Sensors Leadership Team
Corporate Support
Group Support
Patrick Morgan
Safety Systems
Jaime Pla
Drivers and
Energy
Jorge Salhuana
Power
Management
Rick Beale
Marketing &
Strategy
Ronen Shtayer
Program Mgmt
John Hargedon
Engineering
Marc Paul Denamiel
HR
Lisa Bradley
Corporate
Marketing
Richard Wilson
Quality
Jill Partridge
Communications
Business Units
James Trimble
Legal
Rebecca Peterson
Finance
DoDie Hernandez
Executive Administrator
Dave Monk
Motion Sensors
Eric Toulouse
Pressure
Sensors
TM
External Use 5
SMARTMOSTechnology for Today and Tomorrow
Roadmap
TM
External Use 6
SMARTMOS™
MOS-Analog ICS
SMARTMOS™ Technology Integration
More than driving loads
• Cost effective high voltage (110 V) power analog embedded system process platform
• Low RDS(ON)*A (30 mΩ-mm2) for thermal efficiency in high current applications
• High Precision for sensor interface integrated with power applications
• Advanced Isolation capability (-40V) and robust system transient ESD/EMC immunity
• Low power devices to reduce overall system power consumption
• Extreme temperature operation for harsh application environments (-40 to +175ºC)
TM
External Use 7
2005 2010 2015 2020
Increasing Analog and Mixed-Signal Integration
SMOS 10HV0.13µ 5LM SOI 90VATMC Fab
SMOS 10W0.13µ 4LM, 28VATMC Fab
SMOS90UHV, TFS0.09µ 4LM 65VATMC Fab
HiP6MW SiGe0.18µ 5LMATMC Fab 39 ML
SMOS 8MV0.25µ 4LM 80VCHD/OHT Fab
UHV18, SGF0.18µ 5LM 45V ATMC Fab
BiCMOS90MWSiGe 0.09µ, 7LMATMC Fab
HiP6MW2 SiGeHi perf xHBT/TL 6LMATMC Fab 41 ML
SMOS90S, ULL0.09µ 6LM 25V, TFS,Sensor ASICATMC Fab
SMOS 10WS0.13µ 4LM 28VULL, MIM capATMC Fab.
SMOS90P0.09µ 4LM, 28VATMC Fab
HV
Analo
gLV
Ana
log
HV
CM
OS
MM
W
ave
MEMS ASIC
TM
External Use 8
2005 2010 2015 2020
Power MOSFET Solutions
Extr
em
e S
witch
Mild
Hybrid
LFET1T Trench FET0.25um, 45V OHT Fab
LFET1T Trench FET0.25um, 65V OHT Fab
LFET2T 80VTrench FET48V Mild HybridOHT Fab
LFET2T, 45VTrench FETSolid State RelaysOHT Fab
Integrated Power FETTrench FET + Control
0.25um, 80V
HD6 20VPlanar FETStop-StartOHT Fab
Proposal
TM
External Use 9
SMOS10HV Next Generation Technology
• SMOS10HV is Freescale next generation high voltage SmartMOS™ technology.
− Development initiated Jan 2012
• SMOS10HV features:
− 0.13um CMOS platform
− SOI for superior noise isolation/immunity
− High density logic (100k Gates/mm2)
− High voltage capability (90 V)
− Extensive suite of R’s and C’s for analog design
− 3 or 4 layer fine pitch Cu metal + 2um Al “Mcap” (5LM)
− “Anti-fuse” element for OTP
• SMOS10HV has a unique SOI process architecture which offers several advantages:
− Eliminates substrate injection/device cross-talk
− Increased die shrink due to merged trenches
− Reduced design CT- no parasitic bipolar “sneak paths”
− True high side operation for all devices
− Overall increased system level integration
• SMOS10HV is aimed at highly integrated Automotive/Industrialapplications and low noise, high voltage Power Management products.
TM
External Use 10
SMOS5HVP
2002SMOS8MV
2003
SMOS5AP
1996 (0.8µm)
SMOS10HV
2013 (0.13µm)
Logic
Density
Voltage
Capability
45V Power
Rdson*A
Isolation
Voltage
1.1K 2.0K 25.0K 90.0K
65V 105V 45V 105 V
40 mW·mm² 30 mW·mm²67 mW·mm²90 mW·mm²
80 V
(Trench)
105 V
(Trench + SOI)
SMOS5HVP
2002 (0.7µm)SMOS8MV
2006 (0.25µm)
105 V
(Junction)65 V
(Junction)
LVN NW LVNo HVNW
N+ N+LVN
P+N+LVN STI
P+P+N+P+N+STI N+ N+Dee
p
Tre
nch
T
r
e
n
c
h
STI
T
r
e
n
c
h
P+P+STIN+ N+P+STI STI
T
r
e
n
c
h
SMARTMOS Evolution
Back to TOP
TM
External Use 11
Power Steering
Electric Hydraulic
Power Steering
EHPS
Exhaust Gas
Recirculation (EGR)
Engine Cooling FanTurbo Charger
Electric Water
PumpElectronic
Throttle Control
Automotive Motor Applications:
http://www.bba-reman.com/peugeot_307_power_steering.htmhttp://www.bba-reman.com/peugeot_307_power_steering.htm
TM
External Use 12
Motor Basics – H-Bridge / Brushed DC
Basic Motor Operation
Main focus of our portfolio
• Brushed DC, Brushless DC, Stepper
Important considerations for motor
drivers
• Voltage & current operation range; will
vary depending on load (motor)
• Number of outputs
• Switching frequency; trade-off between
noise and efficiency
Freescale offers integrated solution
combining analog, digital and power
MOSFETs into a turnkey solutionAn H-bridge is an electronic circuit
that enables a voltage to be applied
across a load in either direction.
HS1 HS2
LS1 LS2
ON
ON
ON
ON
ForwardReverse
TM
External Use 13
H-Bridge DC Brushed and Stepper Motor Drivers
Basic Operation With Stepper Motor
HS1 HS2
LS1 LS2
ON
ON
ON
ON
HS1 HS2
LS1 LS2
ON
ON
ON
ON
• Dual H-Bridge required for stepper motor control
• Requires sequentially switched power
TM
External Use 14
Brushless DC Motors Basic Structure
Requires mechanism to sense
rotor position to commutate
field properly. This is usually a
hall effect sensor array or an
encoder i.e.. resolver.
Permanent magnet (usually ferrite,
samarium cobolt, or neodymium iron boron)
Benefits of BLDC over brushed DC
− Better performance
− More energy efficient
− Less noisy
TM
External Use 15
Permanent Magnet Synchronous Motor Commutation
• The stator of a Permanent Magnet
Synchronous Motor (PMSM) is
composed of two or more
permanent magnet pole pieces.
• The rotor is composed of windings
which are connected to a
mechanical commutator. In this case
the rotor has
three pole pairs.
TM
External Use 16
Trapezoidal BEMF Sinusoidal BEMF
Six-step Control Sinusoidal Control
+ Simple PWM generation - More complex PWM generation
(sine wave has to be generated)
- Ripple in the torque
(stator flux jumps by 60°)
+ Smooth torque
(stator flux rotates fluently)
- A little noise operation
(due to ripple of the torque)
+ Very quiet
+ Simple sensor (Hall sensor) - Requires sensor with high resolution
(encoder, resolver)
BLDC Motor PMSM
TM
External Use 17
Power Dissipation and Thermal
Analysis Tools for Brushed DC
Motors
Power dissipation and thermal estimation
Datasheet Review
Link to tools
TM
External Use 18
Factors Determining Power Dissipation
Two use cases: Steady state and dynamic when using a
brushed DC H-Bridge motor driver.
Steady State(without switching)
• Load increases
• Current increases
• RDS(ON) increases
Dynamic(with switching/PWM)
• Type of load and current
• Change in RDS(ON)
• Rise/fall time to the
system voltage
• Body diode forward
voltage drop
TM
External Use 19
RDS(ON) Vs Junction Temperature [°C]
0
20
40
60
80
100
120
140
160
180
200
-60 -40 -20 0 20 40 60 80 100 120 140
RD
S(O
N)[m
Ω]
Temperature [°C]
TM
External Use 20
Estimation of Power DissipationIload
PWM
Signal
Vout1
T1 T2 T3 T4
T
Switching Loss
PD_HS2 over T [W] = IOUT2*Rdson
PD_LS1 over T1 [W] = 0.5*(VPWR+VD- IOUT*Rdson)*IOUT*T1*FSW
PD_LS1 over T2 [W] = IOUT2*Rdson*T2*FSW
PD_LS1 over T3 [W] = 0.5*(VPWR+VD- IOUT*Rdson)*IOUT*T3*FSW
PD_HS1 over T4 [W] = IOUT2*Rdson*T4*FSW
Total Power Dissipation on the Die [W] = IOUT2*Rdson + 0.5*(VPWR+VD- IOUT*Rdson)*IOUT*T1*FSW+IOUT
2*Rdson*T2*FSW+0.5*(VPWR+VD- IOUT*Rdson)*IOUT*T3*FSW + IOUT
2*Rdson*T4*FSW
TM
External Use 21
Die Junction Temperature Estimation
Junction temperature (TJ) depends primarily on the following factors:
Mathematically : TJ = TA + PD x RθJA
− Ambient temperature (TA)
− Power dissipated on the die (PD)
− Thermal resistance from junction to ambient (RθJA) which depends on:
IC packaging
Interface material; solder or epoxy
Number of layers in PCB
Amount of copper used on each layer
Thermal via size and number of vias
Heat sink efficiency
TM
External Use 22
Thermal Simulations For Given Conditions (Continued)
TM
External Use 23
Total Power Dissipation on the Die PD [W] = IOUT*(VPWR – V1) +
IOUT*V2 + IS*VPWRIS is the
stand-by current.
V PWR
GND
HS
LS
I OUT
+ -V 1 V 2
Rdson(HS) = (VPWR – V1) /IOUT
Rdson(LS) = V2/IOUT
IOUT2*Rdson(HS) + IOUT
2*Rdson(LS) + IS*VPWR
Power Dissipation Estimation with Experimentation
TM
External Use 24
Pin
Gnd
IF
+
-VD
ESD Protection for the pin.
CS
640
660
680
700
720
740
760
0 50 100
Dio
de v
olt
ag
e (
VD)
Die temperature TD (°C)
Temperature [°C] VD[mV]25 75050 71275 67285 656
• Select IF small enough to
prevent self heating
• 1 to 1.5 mA is a good choice
Characterization of ESD
diode as temperature sensor
Die Temperature Estimation with Experimentation
TM
External Use 25
Transient Thermal Response (From Experimentation)
PD
[W]
Time [s] in log scale
Ju
nctio
n T
em
pe
ratu
re [°C
]
Steady state about 2400 s Steady state about 3600 s
4 [W]125 [°C]
Stand-by power
Increase in temperature
25 [°C]
Heating Curve Noise
TM
External Use 26
Transient Thermal Response (From Experimentation)
PD
[W]
Ju
nctio
n T
em
pe
ratu
re [°C
]
Steady state about 2400 s Steady state about 3600 s
4 [W] 125 [°C]
Stand-by power
Drop in temperature
25 [°C]
Noise free
Time [s] in log scale
Cooling Curve
TM
External Use 27
Transient Thermal Response (From Experimentation)
Th
erm
al Im
pe
da
nce
[°C
/W
]
Steady state about 3600 s
25 [[°C /W]
Cooling Curve
Time [s] in log scale
RθJA = (TJ – TA ) / PD
TM
External Use 28
Transient Thermal Response (From Experimentation)
Th
erm
al Im
pe
da
nce
[°C
/W
]
Steady state about 3600 s
25 [[°C /W]
Heating Curve
Time [s] in log scale
RθJA = (TJ – TA ) / PD
TM
External Use 29
Thermal Specifications for MC33931EK
TM
External Use 30
Transient Thermal Response (From Datasheet)
TM
External Use 31
Thermal Analysis Tools
• Tools to assist analyzing power dissipation
and thermal performance include:
• MC33887 Power Dissipation.xls
• MC33899 Power Dissipation.xls
• MC339xx H-Bridge Power Dissipation.xls
• MC339xx H-Bridge PWM Response.xls
• Available on the Freescale “Compass” sitehttp://compass.freescale.net/livelink/livelink?func=ll&objId=208509673&objAction=browse&viewType=1
http://compass.freescale.net/livelink/livelink/215757439/MC33887_Power_Dissipation.xls?func=doc.Fetch&nodeid=215757439http://compass.freescale.net/livelink/livelink/215767090/MC33899_Power_Dissipation.xls?func=doc.Fetch&nodeid=215767090http://compass.freescale.net/livelink/livelink/215759863/MC339xx_H-Bridge_Power_Dissipation.xls?func=doc.Fetch&nodeid=215759863http://compass.freescale.net/livelink/livelink/215761271/MC339xx_H-Bridge_PWM_Response.xls?func=doc.Fetch&nodeid=215761271http://compass.freescale.net/livelink/livelink?func=ll&objId=208509673&objAction=browse&viewType=1
TM
External Use 32
Thermal Efficiency during Current
Limit
Two methods
Introducing Active Current Limit
TM
External Use 33
Analog
Control &
Protection
Output
Drivers
Gate
Control
Logic EN/
• Package offers lowest
thermal resistance <
1◦C/W
• Current & temperature
of MOSFETs monitored
using real time current
mirror
• Closed-loop system
monitoring provides
real-time current
feedback allows the
software to make
changes on-the-go
Existing Solution for Current Limit (33931/34931)
• Protects against thermal damage when motor is binding or
under heavy loads
TM
External Use 34
Thermal Management for Motor and Device Protection)
• PWM switching
to 6.5 A at < 165°C• Below 165°C, the device PWMs the outputs,
averaging under 6.5 A to reduce thermals
while continuing operation
• Thermal fold back
to 4.2 A at > 165°C• Above 165°C, the device goes into thermal
fold back, averaging under 4.2 A to reduce
thermals while continuing operation
• Thermal shutdown
at 185°C• Above 185°C, the device shuts down
0
1
2
3
4
5
6
7
8
Am
ps
Time
Thermal Management
6.5 A
PWM Switching
4.2 A
Thermal Fold Back
TM
External Use 35
Next Generation Solution for Current Limit
(HB2000/HB2001)
• Current and
temperature of
MOSFETs
monitored
using real time
current mirror
Output
Drivers
Analog
Control &
Protection
MCU
Communication
Interface
Output
Control
Logic
TM
External Use 36
SPIDRIVE H-Bridge Motor Driver
• SPIDRIVE Active current limit -efficient thermal management scheme:
− Current exceeds the threshold
− Blanking time (tB, 32µs) is set
− H-Bridge switches to high-side recirculation mode for 2*tA.
− If the average output FET temperature exceeds the die temperature warning threshold (OTw), the blanking time (tB) increases by a factor of 8 (256µs)
Decreasing the current limit PWM frequency
Reducing the switching losses
Ensuring continuous operation
FSL – reduces switching losses
Recirculation mode for 2*tA
TM
External Use 37
Live Demo
New MC33HB2001
Current limit demonstration
Current MC33931
TM
External Use 38
New Product Roadmaps
H-Bridges
New Motor Drivers
Gate Drivers
TM
External Use 39
Base Part # Out
Op
Volt
(V)
RDS(ON)
MAX(mΩ)
Peak
Current
(A)
SPISleep
(µA)
Freq
(kHz)
Temp
Range °C
Package
(mm)
Samples/
Release
MC33926PNB 2 5-28 235 5 - 50 11/20 -40 to 125PQFN 32
(8x8)Now
MC33931EK 2 5-28 235 5 - 50 11 -40 to 125SOIC 32
(11x10.3)Now
MC33932EK 4 5-28 235 5 - 50 11 -40 to 125SOIC 54
(18x10.3)Now
MC34931SEK 2 5-36 235 5 - 18 20 -40 to 85SOIC 32
(11x10.3)Now
MC34932SEK 4 5-36 235 5 - 18 20 -40 to 85SOIC 54
(18x10.3)Now
MC33HB2000EK 2 5-28 235 5/7/9/11 Y 502-50
8 div-40 to 125
SOIC 32
(11x10.3)
Now /
Dec15
MC33HB2001EK 2 5-28 120 5/7/9/11 Y 502-50
8 div-40 to 125
SOIC 32
(11x10.3)
Now /
Dec15
MC33HB2000PN 2 5-28 235 5/7/9/11 Y 502-50
8 div-40 to 125
PQFN 32
(8x8)
Now /
Mar16
MC33HB2001PN 2 5-28 120 5/7/9/11 Y 502-50
8 div-40 to 125
PQFN 32
(8x8)
Now /
Mar16
Medium Voltage Motor Driver Feature Products
TM
External Use 40
MC33HB2000 & MC33HB2001 Motor Driver
Differentiating Points− First ISO26262 Qualified
− Most accurate real time current feed back (5%)
− Lowest RDS(ON)
− Lowest thermal resistance < 1ºC/W
− Smallest package
− Widest slew rate selection for continuous operation
− Patented thermal protected current limit
Product Features− 4.5 – 28V supply, 40V transient
− MB33HB2000: 120 mΩ typical
− MB33HB2001: 65 mΩ typical (best in industry)
− SPI selectable current limits: 5.1 / 6.7 / 8.4 / 10.3 A
− SPI selectable slew rates: 0.25, 0.5, 1 , 2, 4, 8, 16 V/µs & by-pass
− Two packages: 8 x8x1.2mm PQFN and 10x11x1.2mm SOIC-EP Package
Typical Applications
− Electronic Throttle Control
− Electronic Gas Recirculation
− Turbo Flap Control
− Body Electronics
The MC33HB2000/1 are advanced H-Bridge Motor Driver designed to provide
enhanced safety features for high safety integrity, SPI control for improved
flexibility, and thermal management for continuous operation
TM
External Use 41
MC33926
Monolithic Single H-Bridge Motor Driver
• Thermally efficient 28V/5A H-Bridge DC motor driver featuring real-time load current monitoring and automatic thermal back-off ensures high availability operation in demanding high current, harsh environment applications
• Differentiating Points
− Ultra-low theta JC < 1ºC/Watt for superior heat dissipation
− Current Mirror – 1/400 out from current flowing in MOSFET
− Over current limiting (regulation) via internal constant-off-time PWM
− Over temperature protection – current fold back at 165ºC
− Temperature dependent shut down at 185ºC
− Short to PWR, Short to GND, UVLO, Open Load Detect
− Selectable Slew Rate Control (11 or 20kHz)
− 235 mΩ maximum @ Tj=150°C , 120 mΩ typical RDS(ON) @ Tj=25°C (for each H-Bridge MOSFET)
− 3 and 5V TTL/CMOS logic compatible inputs
• Product Features
− H-Bridge configuration for bi-directional motors
− 5 to 28 Volt continuous; to 40 V transient operation
− 5 Amp peak output current
− Protected against common failure conditions
32-Pin, PQFN
8x8 mmAvailability
Samples: Now
Production: Now
TM
External Use 42
MC33931
Monolithic Single H-Bridge Motor Driver
• Thermally efficient 28V/5A H-Bridge DC motor driver featuring real-time load current monitoring and automatic thermal back-off ensures high availability operation in demanding high current, harsh environment applications
• Differentiating Points
− Ultra-low theta JC < 1ºC/Watt for superior heat dissipation
− Current Mirror – 1/400 out from current flowing in MOSFET
− Over current limiting (regulation) via internal constant-off-time PWM
− Over temperature protection – current fold back at 165ºC
− Temperature dependent shut down at 185ºC
− Short to PWR, Short to GND, UVLO, Open Load Detect
− Sleep mode current typical < 50 μA
− 235 mΩ maximum @ Tj=150°C , 120 mΩ typical RDS(ON) @ Tj=25°C (for each H-Bridge MOSFET)
− 3 and 5V TTL/CMOS logic compatible inputs
• Product Features
− H-Bridge configuration for bi-directional motors
− 5 to 28 Volt continuous; to 40 V transient operation
− 5 Amp peak output current
− Protected against common failure conditions 32-Pin, SOIC-EP10x11 mm
AvailabilitySamples: Now
Production: Now
TM
External Use 43
54-Pin, SOIC-EP
10x18 mm
AvailabilitySamples: Now
Production: Now
MC33932
Monolithic Dual H-Bridge Motor Driver
• Thermally efficient 28V/5A dual H-Bridge DC motor driver featuring real-time load current monitoring and automatic thermal back-off ensures high availability operation in demanding high current, harsh environment applications
• Differentiating Points
− Ultra-low theta JC < 1ºC/Watt for superior heat dissipation
− Current Mirror – 1/400 out from current flowing in MOSFET
− Over current limiting (regulation) via internal constant-off-time PWM
− Over temperature protection – current fold back at 165ºC
− Temperature dependent shut down at 185ºC
− Short to PWR, Short to GND, UVLO, Open Load Detect
− Output short circuit protection (short to VPWR or ground)
− Sleep mode current typical < 50 μA
− 235 mΩ maximum @ Tj=150°C , 120 mΩ typical RDS(ON) @ Tj=25°C (for each H-Bridge MOSFET)
− 3 and 5V TTL/CMOS logic compatible inputs
• Product Features
− H-Bridge configuration for bi-directional motors
− 5 to 28 Volt continuous; to 40 V transient operation
− 5 Amp peak output current
− Protected against common failure conditions
TM
External Use 44
Gate Pre-Driver & Configurable Switch Selector GuideTargeting: 5 V to 1700V Motor/Inverter Applications
Base Part
#Application Out
Op
Volts
(V)
Gate
Drive
Current
(A)
SPISleep
(µA)
Freq
(kHz)
Temp
Range
(°C)
Package
(LxW mm)
Footprint
Release
MC33GD3100IGBT GD /w HV
Isolation1 5.5-90 10 Yes 10 100 -40 to 125 SOICW28 Feb’17
MC33GD3200MOSFET GD /
48V Inverters2 5.5-90 5 Yes 10 100 -40 to 125 SOICW28 May’17
MC33883H-Bridge /
Inverters4 5.5-55 1 No 10 100 -40 to 125
SOIC20
(7.8x7.6)Now
MC33937 Brushless DC 6 5.5-55 1 Yes 30 20 -40 to 125SOIC54
(10X18)Now
MC33GD3000 Brushless DC 6 5.5-58 1 Yes 30 20 -40 to 125QFN56
(8X8)Sept’15
MC33GD3601 Brushless DC 6 5.5-58 1 Yes 30 20 -40 to 125QFN56
(7X7)Oct’17
MC33879C Config LS/HS 8 5.5-27 1.2 Yes 30 2 -40 to 125SOIC32
(10.3X11)Now
MC33880 Config LS/HS 85.5-
24.52 Yes 5 2 -40 to 125
SOIC32
(10.3X11)Now
MC33996EKConfig LS Dual-
Octal 16 5.0-27 2.5 Yes 10 2 -40 to 125
SOIC32
(10.3X11)Now
MC33999EKConfig LS Dual-
Octal 16 5.0-27 2.5 Yes 10 2 -40 to 125
SOIC54
(10X18)Now
TM
External Use 45
GD3000 Brushless DC Motor MOSFET Pre-driver
Features
• Small package: 8x8mm with 6.75x6.75mm exposed pad
• Up to 58V operating voltage range
• PWM > 50 kHz
• > 1.0 A peak gate drive current
• Wide SPI programmable dead time
• Protection against transient spikes and reverse charge injection
Typical Applications
• Electronic Power Steering
• Fan, Pumps & Solenoids
56-lead, QFN-EP
8x8mm
-40 to 125ºC MC33GD3000EP/R2
-20 to 105ºC MC34GD3000EP/R2
Product Options
AvailabilitySamples: Now
Production: Sept, 2015
GD3000
TM
External Use 46
GD3100 Architecture & Product FeaturesGate driver for high voltage N-channel power IGBTs with high voltage isolator designed for ASIL D
(ISO26262) functional safety systems
Differentiation:
• Fast short circuit protection via direct feedback through
sense IGBTs
• High speed over current protection with soft shutdown
• Integrated temperature sense for system warning and
ultimately soft shutdown for system protection
• Integrated galvanic signal isolation between the low-
voltage drive electronics and the high-voltage power
electronics in single package to reduce PCB area
Features:
• Compliant with ASIL D (ISO26262) functional safety
• Daisy chainable SPI interface for safety monitoring,
programmability and flexibility
• Isolated AMUX for monitoring key circuit voltages and
currents
• Active Miller Clamp eliminates the need for negative gate
supply voltage
• Integrated gate drive power stage capable of 10A source
and sink
• Compatible with 200V to 1700V IGBTs, >125kW
Applications:
• Hybrid Electric Vehicle Inverters
• HV UPS
• Alt Energy-40 to 125ºC MC33GD3100EK/R2
Product Options
AvailabilitySamples: Q4’15
Production: Q1’17
32-Pin, SOIC-EP
10x11 mm
TM
External Use 47
GD3200 MOSFET GDIC 48V – Product FeaturesHalf-Bridge MOSFET gate driver for very high current, 48V inverters. Compatible with FSL MILD90 MOSFETs.
Differentiation:
• Temperature and current sensing to safely extend
inverter’s operating range
• SPI interface for ASIL compliance, flexibility and tune-
ability
• Active Vds clamp protects MOSFET at high currents
• Manages failure points between 12V and 48V
Features:
• SPI for configurability and for providing detailed fault &
status data
• Balance trade-offs between speed/noise/protection during
switching
• Senses MOSFET current for rapid over current response
• Senses MOSFET temperature to maximize inverter power
• Active VDS clamp to protect MOSFET at each turn-off
• Segmented drive at turn on to reduce trr noise
• 5 Amp gate drive
• Package: 48 lead LQFP
Application:
• HEV 48V inverter systems
• 48V UPS systems
• Servers / Telecom inverters-40 to 85ºC MC33GD3200EP/R2
Product Options
AvailabilitySamples: Q2’16
Production: Q2’17
TM
External Use 48
GD3601 Brushless DC Motor MOSFET Pre-driver
Differentiation:• Programmable dead-time: 0 ns to 2 µs in 50ns
resolution
• BEMF Comparators
• 1A, 5V Buck Regulator for external use
• 150mA , Programmable 3.3V or 5V LDO for external
use
• Low-Power Stand-by
TM
External Use 49
EnablementsDC Brushed, Brushless and Stepper Motors
Support Team
GDIC and 3PP
LV and MV portfolio
TM
External Use 50
H-Bridge DC Motor Drivers
HB2000 & HB2001 Eco Systems
• FRDM kits include:
− Development board
− Users Guide
− Schematic and bill of material
− Software and ribbon cable
− USB cable
• Development tools:
SPIGEN Software available on
Freescale.com website for attach
to FRDM board
Attach to FRDM-KL25ZFSL Part # Kit Name Available
MC33HB2000EK FRDM-HB2000EK-EVB May
MC33HB2000FK FRDM-HB2000FK-EVB June
MC33HB2001EK FRDM-HB2001EK-EVB Now
MC33HB2001FK FRDM-HB2001FK-EVB June
Available Parts
FRDM-KL25Z
•SPIGEN see next page
http://www.freescale.com/webapp/sps/site/prod_summary.jsp?code=FRDM-KL25Z
TM
External Use 51
HB2000 & HB2001 SPIGEN Screen
TM
External Use 52
Development Kits with Evaluation Board
• Evaluation boards drive from PC using USB to SPI interface board
• Tower board for MC33/34926 & MC33/34931*
• Process Expert Software in development*
Complete Technical Documentation avalable
to ease Design
• Datasheets and Application notes
• Power Dissipation prediction tool
• Technical Training and hands on training on demand
Medium Voltage Motor Drivers EcoSystem
FSL part Kit nameAssociated
boards
MC33887EK KIT33887EKEVBE KITUSBSPIDGLEVE
MC33926PNB KIT33926PNBEVBE KITUSBSPIDGLEVE
MC34931EK* FRDM-34931S-EVB FRDM-KL25Z / etc.
MC33932EK KIT33932EKEVBE KITUSBSPIDGLEVE
MC33926PN TWR-MC-MVHB1EVB Tower
MC33932EK TWR-MC-MVHB1EVB Tower
Production: NOW
Evaluation Boards: NOW
*Q2 release
TM
External Use 53
PEx LV and MV Software Availability
Development Priority
Priority MCU Family
1 FRDM / TWR-KL25Z48M Kinetis L
1 TWR-KL43Z48M Kinetis L
1 FRDM-KL46 Kinetis L
1 FRDM-KL05 Kinetis L
1 TWR-KV31F120M Kinetis V
1 TWR-KV10Z32 Kinetis V
1 FRDM-KE06Z Kinetis E
1 TWR-K64F120M Kinetis K
1 TWR / FRDM-K20 Kinetis K
1 TWR-K22F120 Kinetis K
1 TWR-K70 Kinetis K
2 TWR-KM34Z50M Kinetis M
2 TWR-56F8257 DSC
2 TWR-S08PT60 S08
2 TWR-S12G240 S12
3 TWR-MCF51CN Coldfire
3 TWR-MCF51JF Coldfire
3 TWR-VF65GS10 Vybrid
3 TWR-P1025 QorIQ
3 TWR-LS1021A QorIQ
• Tower boards complete
• Five programmers hired in Brno
• Will roll out PEx through-out
2015
* PEx = Processor Expert
TM
External Use 54
MC34937 EcoSystem
MC34937 EVAL Board: KIT33937AEKEVBE
Tower LV Motor Control Board:TWR-MC-LV3PH
3-Phase LV Motor Control Kit: 3PHASELV
KIT33937AEKEVBE
TWR-MC-LV3PH
3PHASELV
http://www.freescale.com/webapp/sps/site/prod_summary.jsp?code=KIT33937AEKEVBE&fsrch=1&sr=13http://www.freescale.com/webapp/sps/site/prod_summary.jsp?code=TWR-MC-LV3PH&fsrch=1&sr=17http://www.freescale.com/webapp/sps/site/prod_summary.jsp?code=3PHASELV-KIT&fsrch=1&sr=1
TM
External Use 55
Summary
• Thermal management of motor drive applications is critical because
motors can bind, stick and stall
• The device and system design are important to optimize thermal
performance
• Critical information found in data sheet and thermal models
• Freescale’s innovative motor drivers monitor temperature, self-regulates
device thermals and provides safeguards against device and motor
damage
TM
© 2015 Freescale Semiconductor, Inc. | External Use
www.Freescale.com
http://www.freescale.com/http://www.freescale.com/https://twitter.com/Freescalehttps://twitter.com/Freescalehttps://twitter.com/Freescalehttps://twitter.com/Freescalehttps://www.facebook.com/freescalehttps://www.facebook.com/freescalehttps://www.facebook.com/freescalehttps://www.facebook.com/freescaleTop Related