12
3
TAB
TO-2201
3
TAB
D PAK2
Features• Maximum junction temperature: TJ = 175 °C• High speed switching series• Minimized tail current• Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A• Tight parameter distribution• Safe paralleling• Positive VCE(sat) temperature coefficient• Low thermal resistance• Very fast soft recovery antiparallel diode
Applications• Photovoltaic inverters• High frequency converters
DescriptionThese devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, whichrepresent an optimum compromise between conduction and switching loss tomaximize the efficiency of any frequency converter. Furthermore, the slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.
Product status link
STGB30H60DFB
STGP30H60DFB
Trench gate field-stop 600 V, 30 A high speed HB series IGBT
STGB30H60DFB, STGP30H60DFB
Datasheet
DS10468 - Rev 3 - May 2019For further information contact your local STMicroelectronics sales office.
www.st.com
https://www.st.com/en/product/STGB30H60DFBhttps://www.st.com/en/product/STGP30H60DFB
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0 V) 600 V
ICContinuous collector current at TC = 25 °C 60
AContinuous collector current at TC = 100 °C 30
ICP (1) Pulsed collector current 120
VGEGate-emitter voltage ±20
VTransient gate-emitter voltage ±30
IFContinuous forward current at TC = 25 °C 60
AContinuous forward current at TC = 100 °C 30
IFP (1) Pulsed forward current 120
PTOT Total power dissipation at TC = 25 °C 260 W
TSTG Storage temperature range - 55 to 150°C
TJ Operating junction temperature range - 55 to 175
1. Pulse width limited by maximum junction temperature.
Table 2. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case IGBT 0.58
°C/WRthJC Thermal resistance junction-case diode 2.08
RthJA Thermal resistance junction-ambient 62.5
STGB30H60DFB, STGP30H60DFBElectrical ratings
DS10468 - Rev 3 page 2/21
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 600 V
VCE(sat)Collector-emitter saturationvoltage
VGE = 15 V, IC = 30 A 1.55 2
VVGE = 15 V, IC = 30 A, TJ = 125 °C 1.65
VGE = 15 V, IC = 30 A, TJ = 175 °C 1.75
VF Forward on-voltage
IF = 30 A 2 2.6
VIF = 30 A, TJ = 125 °C 1.7
IF = 30 A, TJ = 175 °C 1.6
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 600 V 25 µA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA
Table 4. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitance
VCE= 25 V, f = 1 MHz, VGE = 0 V
- 3659 -
pFCoes Output capacitance - 101 -
Cres Reverse transfer capacitance - 76 -
Qg Total gate chargeVCC = 520 V, IC = 30 A, VGE = 0 to 15 V(see Figure 28. Gate charge test circuit)
- 149 -
nCQge Gate-emitter charge - 25 -
Qgc Gate-collector charge - 62 -
STGB30H60DFB, STGP30H60DFBElectrical characteristics
DS10468 - Rev 3 page 3/21
Table 5. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VCE = 400 V, IC = 30 A, VGE = 15 V,RG = 10 Ω (see Figure 27. Test circuitfor inductive load switching)
- 37 -ns
tr Current rise time - 14.6 -
(di/dt)on Turn-on current slope - 1643 - A/µs
td(off) Turn-off-delay time - 146 -ns
tf Current fall time - 23 -
Eon (1) Turn-on switching energy - 383 -
µJEoff (2) Turn-off switching energy - 293 -
Ets Total switching energy - 676 -
td(on) Turn-on delay time
VCE = 400 V, IC = 30 A, VGE = 15 V,RG = 10 Ω, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching)
- 35 -ns
tr Current rise time - 16.1 -
(di/dt)on Turn-on current slope - 1496 - A/µs
td(off) Turn-off-delay time - 158 -ns
tf Current fall time - 65 -
Eon (1) Turn-on switching energy - 794 -
µJEoff (2) Turn-off switching energy - 572 -
Ets Total switching energy - 1366 -
1. Including the reverse recovery of the diode.2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery time
IF = 30 A, VR = 400 V, VGE = 15 V,
di/dt = 1000 A/μs (see Figure 27. Testcircuit for inductive load switching)
- 53 - ns
Qrr Reverse recovery charge - 384 - nC
Irrm Reverse recovery current - 14.5 - A
dIrr/dtPeak rate of fall of reverserecovery current during tb
- 788 - A/µs
Err Reverse recovery energy - 104 - µJ
trr Reverse recovery time
IF = 30 A, VR = 400 V, VGE = 15 V,
di/dt = 1000 A/µs, TJ = 175 °C(see Figure 27. Test circuit for inductiveload switching)
- 104 - ns
Qrr Reverse recovery charge - 1352 - nC
Irrm Reverse recovery current - 26 - A
dIrr/dtPeak rate of fall of reverserecovery current during tb
- 310 - A/µs
Err Reverse recovery energy - 407 - µJ
STGB30H60DFB, STGP30H60DFBElectrical characteristics
DS10468 - Rev 3 page 4/21
2.1 Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
Ptot
150
100
00 50 TC (°C)75
(W)
25 100 125 150
50
200
175
250
VGE ≥ 15V, TJ ≤ 175 °C
GIPG280120141353FSR
Figure 2. Collector current vs case temperature
IC
60
40
20
00 50 TC (°C)75
(A)
25 100 125 150
VGE ≥ 15V, TJ ≤ 175 °C
GIPG280120141346FSR
Figure 3. Output characteristics (TJ = 25 °C)
GIPG280120141156FSR
100
80
60
40
20
00 1 2 3 4 5
IC (A)
VCE (V)VGE =7 V
VGE =9 V
VGE =13 VVGE =11 V
VGE =15 V
Figure 4. Output characteristics (TJ = 175 °C)
GIPG280120141206FSR
100
80
60
40
20
00 1 2 3 4 5
IC (A)
VCE (V)VGE =7 V
VGE =9 V
VGE =11 VVGE =13 VVGE =15 V
Figure 5. VCE(sat) vs junction temperature
VCE(sat)
1.8
1.6
1.4
1.2-50 0 TJ (°C)
(V)
50 100 150
2.2
2.0
VGE = 15 V
IC = 60 A
IC = 30 A
IC = 15 A
GIPG280120141440FSR
Figure 6. VCE(sat) vs collector current
VCE(sat)
1.6
1.4
1.215 30 IC (A)
(V)
45 60
2.2
2.0
1.8
VGE = 15 V
TJ = 175 °C
TJ = 25 °C
TJ = -40 °C
2.4
GIPG280120141446FSR
STGB30H60DFB, STGP30H60DFBElectrical characteristics (curves)
DS10468 - Rev 3 page 5/21
Figure 7. Collector current vs switching frequency
GIPG280120141713FSR
80
60
40
20
0100 101 102
IC (A)
f (kHz)
TC = 80 °C
TC = 100 °C
Rectangular current shape(duty cycle = 0.5, VCC = 400 V,RG = 10 Ω, VGE = 0/15 V , Tj = 175 °C
Figure 8. Forward bias safe operating area
IC
100
10
1
0.11 VCE(V)
(A)
10 100
10 µs
100 µs
1 ms
(single pulse TC = 25°C, TJ ≤ 175°C; VGE=15V)
Vce(sat) limit
GIPG090720141330FSR
Figure 9. Transfer characteristics
GIPG280120141330FSR
100
80
60
40
20
05 7 9 11
IC (A)
VGE (V)
Tj = 25 °C
Tj = 175 °C
VCE = 6 V
Figure 10. Diode VF vs forward current
VF
2.0
1.6
1.2
0.810 IF(A)
(V)
20
TJ= 175°C
30 40 50
TJ= 25°C
TJ= -40°C
60
2.8
2.4
GIPG090720141349FSR
Figure 11. Normalized VGE(th) vs junction temperature
VGE(th)(norm)
0.8
0.7
0.6-50 TJ(°C)0 50 100 150
0.9
1.0
VCE = VGE, IC = 1 mA
AM16060v1
Figure 12. Normalized V(BR)CES vs junction temperature
V(BR)CES(norm)
1.1
1.0
0.9-50 TJ(°C)0 50 100 150
IC= 2mA
AM16059v2
STGB30H60DFB, STGP30H60DFBElectrical characteristics (curves)
DS10468 - Rev 3 page 6/21
Figure 13. Capacitance variations
C
10VCE (V)
(pF)
0.1 1 10
Cies
100
1000
CoesCres
100
GIPG090720141358FSR
Figure 14. Gate charge vs. gate-emitter voltage
IG = 1mA
VGE (V)
4
2
00 Qg (nC)40 80 120 160
6
8
10
12
14
VCC = 520 V, IC = 30 A16
GIPG280120141455FSR
Figure 15. Switching energy vs collector current
E
0IC(A)
(µJ)
0 10 20
400
30 40
800
EON1200
VCC = 400V, VGE = 15V, RG = 10Ω, TJ = 175°C
50
EOFF
1600
60
GIPG090720141414FSR
Figure 16. Switching energy vs gate resistance
GIPG090720141421FSR
1400
1200
1000
800
600
4000 10 20 30 40
E(μJ)
RG (Ω)
VCC = 400 V, IC = 30 A, VGE = 15 V, TJ = 175 °C Eon
Eoff
Figure 17. Switching energy vs temperature
E
0TJ(°C)
(µJ)
20 60
200
400
600
100 140
EOFF
VCC= 400V, VGE= 15V, RG= 10Ω, IC= 30A
EON
800
GIPG090720141431FSR
Figure 18. Switching energy vs collector emitter voltage
GIPG090720141440FSR
1000
800
600
400
200
0100 200 300 400 500
E(μJ)
VCE (V)
Eon
Eoff
IC = 30 V, RG = 10 Ω, VGE = 15 V, TJ = 175 °C
STGB30H60DFB, STGP30H60DFBElectrical characteristics (curves)
DS10468 - Rev 3 page 7/21
Figure 19. Switching times vs collector current
t
IC(A)
(ns)
0 10 201
30
tf
TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V
tdoff
10
tr
tdon
40 50
100
GIPG100720141533FSR
Figure 20. Switching times vs gate resistance
t
10RG(Ω)
(ns)
0 10 20
100
30
tf
TJ= 175°C, VGE= 15V, IC= 30A, VCC= 400V
40
tdon
tdoff
tr
GIPG100720141549FSR
Figure 21. Reverse recovery current vs diode currentslope
Irm
0di/dt(A/µs)
(A)
0 500 1000
40
1500
IF = 30A, Vr = 400V
2000
60 =175°C
=25°C20
TJ
TJ
2500
GIPG100720141607FSR
Figure 22. Reverse recovery time vs diode current slope
trr
0di/dt(A/µs)
(µs)
0 500 1000
100
1500
IF = 30A, Vr = 400V
2000
150
=175°C
=25°C
200
50
TJ
TJ
GIPG110720140846FSR
Figure 23. Reverse recovery charge vs diode currentslope
Qrr
0di/dt(A/µs)
(nC)
0 500 1000
1500
1500
IF = 30A, Vr = 400V
2000
2000=175°C
=25°C1000
TJ
TJ
500
GIPG110720140854FSR
Figure 24. Reverse recovery energy vs diode currentslope
Err
0di/dt(A/µs)
(µJ)
0 500 1000
600
1500
IF = 30A, Vr = 400V
2000
1000
=175°C
=25°C200
TJ
TJ
400
800
GIPG110720140859FSR
STGB30H60DFB, STGP30H60DFBElectrical characteristics (curves)
DS10468 - Rev 3 page 8/21
Figure 25. Thermal impedance for IGBT
10 10 10 10 10 tp(s)-5 -4 -3-2 -1
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-cδ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
Figure 26. Thermal impedance for diode
STGB30H60DFB, STGP30H60DFBElectrical characteristics (curves)
DS10468 - Rev 3 page 9/21
3 Test circuits
Figure 27. Test circuit for inductive load switching
A AC
E
G
B
RG+
-
G
C 3.3µF1000
µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
Figure 28. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 29. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
IC td(on)ton
tr(Ion)
td(off)
toff
tf
tr(Voff)tcross
90%
10%
Figure 30. Diode reverse recovery waveform
t
GADG180720171418SA
10%
VRRM
dv/dt
di/dt
IRRM
IFtrr
ts tf
Qrr
IRRM
STGB30H60DFB, STGP30H60DFBTest circuits
DS10468 - Rev 3 page 10/21
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.
STGB30H60DFB, STGP30H60DFBPackage information
DS10468 - Rev 3 page 11/21
https://www.st.com/ecopackhttp://www.st.com
4.1 D²PAK (TO-263) type A2 package information
Figure 31. D²PAK (TO-263) type A2 package outline
0079457_A2_26
STGB30H60DFB, STGP30H60DFBD²PAK (TO-263) type A2 package information
DS10468 - Rev 3 page 12/21
Table 7. D²PAK (TO-263) type A2 package mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.70 8.90 9.10
E2 7.30 7.50 7.70
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.40
V2 0° 8°
Figure 32. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
STGB30H60DFB, STGP30H60DFBD²PAK (TO-263) type A2 package information
DS10468 - Rev 3 page 13/21
4.2 D²PAK packing information
Figure 33. D²PAK tape outline
STGB30H60DFB, STGP30H60DFBD²PAK packing information
DS10468 - Rev 3 page 14/21
Figure 34. D²PAK reel outline
A
D
B
Full radius
Tape slot in core for tape start
2.5mm min.width
G measured at hub
C
N
40mm min. access hole at slot location
T
AM06038v1
Table 8. D²PAK tape and reel mechanical data
Tape Reel
Dim.mm
Dim.mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3
STGB30H60DFB, STGP30H60DFBD²PAK packing information
DS10468 - Rev 3 page 15/21
4.3 TO-220 type A package information
Figure 35. TO-220 type A package outline
0015988_typeA_Rev_22
STGB30H60DFB, STGP30H60DFBTO-220 type A package information
DS10468 - Rev 3 page 16/21
Table 9. TO-220 type A package mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
STGB30H60DFB, STGP30H60DFBTO-220 type A package information
DS10468 - Rev 3 page 17/21
5 Ordering information
Table 10. Order codes
Order code Marking Package Packing
STGB30H60DFB GB30H60DFB D²PAK Tape and reel
STGP30H60DFB GP30H60DFB TO-220 Tube
STGB30H60DFB, STGP30H60DFBOrdering information
DS10468 - Rev 3 page 18/21
Revision history
Table 11. Document revision history
Date Revision Changes
07-Aug-2014 1 Initial release.
28-Oct-2015 2Updated Figure 23 and Section 5.
Minor text changes.
23-May-2019 3
Modified Figure 3. Output characteristics (TJ = 25 °C), Figure 4. Output characteristics(TJ = 175 °C), Figure 9. Transfer characteristics, Figure 7. Collector current vsswitching frequency, Figure 18. Switching energy vs collector emitter voltage.
Minor text changes.
STGB30H60DFB, STGP30H60DFB
DS10468 - Rev 3 page 19/21
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
STGB30H60DFB, STGP30H60DFBContents
DS10468 - Rev 3 page 20/21
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.
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Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
STGB30H60DFB, STGP30H60DFB
DS10468 - Rev 3 page 21/21
http://www.st.com/trademarks
1 Electrical ratings2 Electrical characteristics2.1 Electrical characteristics (curves)
3 Test circuits4 Package information4.1 D²PAK (TO-263) type A2 package information4.2 D²PAK packing information4.3 TO-220 type A package information
5 Ordering informationRevision history
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