AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5200-E Photoresist
Original i-line resists Various viscosity grades for a multitude of applications.
Sensitive in i-line and g-line
High thermal stability.
Can be developed in a variety of metal ion free and inorganic developers(with and without surfactants)
Can be used in a positive mode and with a special image reversal process.
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5200-E Photoresisti-line Resolution at Specific Film Thickness
0.5 0.6 0.7 0.8 0.9 1.0 ~ 1.5 ~ 2Resolution (µm)
Film
Thi
ckne
ss (µ
m)
7
6
5
4
3
2
1
AZ 5218-E
AZ 5209-E
AZ 5214-E
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5200-E PhotoresistSpin Speed Curves
0123456
0 1000 2000 3000 4000rpm
Film
Thi
ckne
ss, µ
m
AZ 5218-E
AZ 5209-E
AZ 5214-E
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5200-E Photoresist
DTC Swingcurve for AZ 5214-E ResistAZ 1:1 Developer
40
45
50
55
60
65
1.14 1.18 1.22 1.26 1.3 1.34 1.38 1.42 1.46 1.5Film Thickness [µm]
mJ/
cm²
max =1.194µm
min = 1.250µm
max = 1.326µm
min = 1.381µm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5200-E PhotoresistOptical Parameters
◊ Refractive Index
Bleached 365nm 405nm 435nmn 1.6904 1.6667 1.6534k 0.0012 0.0005 0.0004
Unbleachedn 1.6990 1.6888 1.6758k 0.0175 0.0179 0.0040
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5200-E Photoresist Optical Parameters
◊ Dill Parametersi-line: g-line:
A = 0.6181 (µm-1) A= NAB = 0.0314 (µm-1) B= NAC = 0.0284 (cm2/mJ) C= NA
◊ Cauchy CoefficientsA B C
Bleached 1.5908 0.011525µm² 6.70E-07µm4
Unbleached 1.6035 0.005574µm² 2.34E-03µm4
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5200-E Photoresist Optical Parameters - Absorptivity
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
300 350 400 450 500 550 600 650
wave length, nm
abs
322 nm 385 nm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5200-E PhotoresistImage Reversal Process
1. Prepare wafers (e.g. HMDS prime)
2. Spin coat 0.6-2.6µm
3. Soft bake 90-100°C/ 45-60sec hot plate
4. Expose (g-line, i-line, broad band)
5.PEB 110-120°C/ 45 sec or two step
6. Flood exposure (365-405nm/ 1-2J/cm²)
7. Develop (MIF or IN developers)
Improved Adhesion
Oven bake 90°C/ 30min
Inducing cross linking
Under-exposure gives lift off profile
Solubilization of previouslyunexposed resist
Optimum resolution andLine-width control withmore dilute developers
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5214E PhotoresistProcess Conditions
Dense LinesFT: 1.25µmSB: 100°C/ 42 sec NIKON 0.54 NA i-Line No PEBAZ 300 MIF Developer ,70 sec double puddle @ 20.0°C
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
D9813-S : Nominal 84 mJ/cm²Exp. latitude 81 %
D9721: Nominal 77 mJ/cm²Exp. latitude 87 %
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
40 50 60 70 80 90 100 110 120
Exposure Dose [mJ/cm²]
Mea
sure
d Li
newid
th [µ
m]
AZ 5214E Photoresist2.0 µm L/S Exposure Latitude on Si, FT = 1.25 µm
SB: 100°C, 42 sec; PEB: NoneNIKON 0.54 NA i-Line AZ 300 MIF Developer ,70 sec double puddle @ 20.0°C
E nominal = 84 mJ/cm², Exposure Latitude = 81%
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5214E Photoresist2.0 µm L/S Exposure Latitude on Si, FT = 1.25 µm
SB: 100°C, 42 sec; PEB: NoneNIKON 0.54 NA i-Line AZ 300 MIF Developer ,70sec double puddle @ 20.0°C
E nom = 84 mJ/cm²EXP.Lat. = 81%
45mJ/cm² 55mJ/cm² 65mJ/cm² 75mJ/cm²
80mJ/cm²
85mJ/cm²95mJ/cm²105mJ/cm²115mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2Nominal Linewidth [µm]
Mea
sure
d Li
new
idth
[µm
]
75 mJ/cm² 85 mJ/cm² 95 mJ/cm²
AZ 5214E PhotoresistLinearity on Si, FT = 1.25 µm Focus = 0.0 µm
SB: 100°C, 42 sec; PEB: NoneNIKON 0.54 NA i-Line AZ 300 MIF Developer ,70sec double puddle @ 20.0°C
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5214E PhotoresistLinearity on Si, FT = 1.25 µm
SB: 100°C, 42 sec; PEB: NoneNIKON 0.54 NA i-Line AZ 300 MIF Developer ,70sec double puddle @ 20.0°C
75 mJ/cm²
1.5µm 1.2µm 1.1µm 1.0µm
0.9µm
0.8µm0.7µm0.6µm0.5µm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5214E PhotoresistLinearity on Si, FT = 1.25 µm
SB: 100°C, 42 sec; PEB: NoneNIKON 0.54 NA i-Line AZ 300 MIF Developer ,70sec double puddle @ 20.0°C
85 mJ/cm²
1.5µm 1.1µm 0.8µm 0.7µm
0.6µm0.55µm0.5µm0.45µm
0.65µm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5214E PhotoresistLinearity on Si, FT = 1.25 µm
SB: 100°C, 42 sec; PEB: NoneNIKON 0.54 NA i-Line AZ 300 MIF Developer ,70sec double puddle @ 20.0°C
95 mJ/cm²
1.0µm
0.9µm
0.8µm0.75µm0.65µm
1.1µm1.2µm1.5µm
0.7µm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
1.4
1.6
1.8
2.0
2.2
2.4
-1.6 -1.2 -0.8 -0.4 0.0 0.4 0.8 1.2 1.6
Focus [µm]
Mea
sure
d Li
newid
th [µ
m]
75 mJ/cm² 85 mJ/cm² 95 mJ/cm²
AZ 5214E Photoresist2.0 µm L/S Focus Latitude on Si, FT = 1.25 µm
SB: 100°C, 42 sec; PEB: NoneNIKON 0.54 NA i-Line AZ 300 MIF Developer ,70sec double puddle @ 20.0°C
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5214E Photoresist2.0 µm L/S Focus Latitude on Si, FT = 1.25 µm
SB: 100°C, 42 sec; PEB: NoneNIKON 0.54 NA i-Line AZ 300 MIF Developer ,70sec double puddle @ 20.0°C
75 mJ/cm²
1.4µm 0.2µm0.6µm1.0µm
-0.2µm-0.6µm-1.4µm -1.0µm
0.0µm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5214E Photoresist2.0 µm L/S Focus Latitude on Si, FT = 1.25 µm
SB: 100°C, 42 sec; PEB: NoneNIKON 0.54 NA i-Line AZ 300 MIF Developer ,70sec double puddle @ 20.0°C
85 mJ/cm²
1.4µm 0.2µm0.6µm1.0µm
-0.2µm-0.6µm-1.4µm -1.0µm
0.0µm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5214E Photoresist2.0 µm L/S Focus Latitude on Si, FT = 1.25 µm
SB: 100°C, 42 sec; PEB: NoneNIKON 0.54 NA i-Line AZ 300 MIF Developer ,70sec double puddle @ 20.0°C
95 mJ/cm²
1.4µm 0.2µm0.6µm1.0µm
-0.2µm-0.6µm-1.4µm -1.0µm
0.0µm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
Process conditionsFT: 4µm, SB: 110°C/90 secExp. PE 400mJ/cm² with i-Line filter, PEB: 50°C/60sec then 110°C/90secDevelop: AZ 917 MIF developer, 90sec spray @ room temperature
AZ 5218-E Photoresist3µm L/S Image Reversal Process
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 5214-E PhotoresistThermal Stability of Large Pad
No Bake 110°C 115°C
120°C
125°CSB: 100°C, 42 sec; PEB: NoneNIKON 0.54 NA i-Line AZ 300 MIF Developer ,70sec double puddle @ 20.0°CHard Bake: 120 sec/ hot plate
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
Dense LinesFT: 1.25µmSB: 100°C/ 42 sec; NIKON 0.54 NA i-LineNo PEBAZ 1:1 Developer, 60 sec Immersion @ 24.5°C
AZ 5214-E PhotoresistProcess Conditions
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
SB: 100°C/ 42 sec; NIKON 0.54 NA i-LineAZ 1:1 Developer 60sec immersion @ 24.5°C
AZ 5214-E PhotoresistExposure Latitude 2.0 µm L/S on Si, FT = 1.25µm
55mJ/cm² 60mJ/cm² 65mJ/cm² 70mJ/cm²
75mJ/cm²
80mJ/cm²85mJ/cm²
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
D9822-S: Nominal 65 mJ/cm²Exp. latitude 74 %
D9811 : Nominal 68 mJ/cm²Exp. latitude 59 %
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
50 60 70 80 90
Exposure Dose [mJ/cm²]
Mea
sure
d Li
new
idth
[µm
]
SB: 100°C/ 42 sec; NIKON 0.54 NA i-LineAZ 1:1 Developer 60sec immersion @ 24.5°C
AZ 5214-E PhotoresistExposure Latitude 2.0 µm L/S on Si, FT = 1.25µm
E nominal = 68 mJ/cm², Exposure Latitude = 59%
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
SB: 100°C/ 42 sec; NIKON 0.54 NA i-LineAZ 1:1 Developer 60sec immersion @ 24.5°C
AZ 5214-E PhotoresistExposure Latitude 2.0 µm L/S on Si, FT = 1.25µm
55mJ/cm² 60mJ/cm² 65mJ/cm² 70mJ/cm²
75mJ/cm²
80mJ/cm²85mJ/cm²
E nom = 68 mJ/cm²Exp.Lat. = 59%
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2Nominal Linewidth [µm]
Mea
sure
d Li
new
idth
[µm
]
60 mJ/cm² 65 mJ/cm² 75 mJ/cm²
SB: 100°C/ 42 sec; NIKON 0.54 NA i-LineAZ 1:1 Developer 60sec immersion @ 24.5°C
AZ 5214-E PhotoresistLinearity on Si, FT = 1.25µm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
SB: 100°C/ 42 sec; NIKON 0.54 NA i-LineAZ 1:1 Developer 60sec immersion @ 24.5°C
AZ 5214-E PhotoresistLinearity on Si, FT = 1.25µm
60 mJ/cm²
1.2µm 1.0µm 0.90µm 0.80µm
0.60µm 0.65µm 0.70µm
0.75µm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
SB: 100°C/ 42 sec; NIKON 0.54 NA i-LineAZ 1:1 Developer 60sec immersion @ 24.5°C
AZ 5214-E PhotoresistLinearity on Si, FT = 1.25µm
65 mJ/cm²
1.2µm 1.0µm 0.90µm 0.80µm
0.60µm 0.65µm 0.70µm
0.75µm
0.55µm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
SB: 100°C/ 42 sec; NIKON 0.54 NA i-LineAZ 1:1 Developer 60sec immersion @ 24.5°C
AZ 5214-E PhotoresistLinearity on Si, FT = 1.25µm
75 mJ/cm²
1.2µm 1.0µm 0.90µm 0.80µm
0.60µm 0.65µm 0.70µm0.55µm
0.75µm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
1.4
1.6
1.8
2.0
2.2
2.4
-1.6 -1.2 -0.8 -0.4 0.0 0.4 0.8 1.2 1.6Focus [µm]
Mea
sure
d Li
new
idth
[µm
]
65 mJ/cm²
SB: 100°C/ 42 sec; NIKON 0.54 NA i-LineAZ 1:1 Developer 60sec immersion @ 24.5°C
AZ 5214-E PhotoresistFocus Latitude 2.0 µm L/S on Si, FT = 1.25µm
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.
SB: 100°C/ 42 sec; NIKON 0.54 NA i-LineAZ 1:1 Developer 60sec immersion @ 24.5°C
AZ 5214-E PhotoresistFocus Latitude 2.0 µm L/S on Si, FT = 1.25µm
65 mJ/cm²
1.4µm 1.0µm 0.60µm 0.20µm
-1.0µm -0.60µm -0.20µm-1.40µm
0.00µm
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