Aluminum Nitride Powder & GranuleAluminum Nitride Ceramics
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What's AlN?
Features
Applications
Differences among ceramic materials
1. High thermal conductivity (about 10 times that of alumina)2. Close thermal expansion coefficient to that of Silicon (Si)3. High insulation4. High mechanical strength (higher than alumina)5. High corrosion resistance (non-wetted by most molten
metals)
Feel free to ask us anything about AlN!
Comparison of thermal conductivity Comparison of thermal expansion coefficient
■ AlN has high thermal conductivity outstandingly among various substrate materials.
■ AIN has a thermal expansion coefficient close to that of various semiconductor substrate materials. Metals with large thermal expansion coefficients are not suitable for the mounting of large semiconductor devices. AIN has an advantage on thermal expansion coefficient.
SSilicon carbide
iC < SSilicon nitride
i₃N₄ < AAluminal₂O₃ < A
Aluminum nitridelN
Comparison of halogen-plasma resistance
Substrate materials Wiring materials
0
50
100
150
200
250
300
350
400
450
20
70
237
419
293
398
0.4 0.3
Device materials
41
Sapphire
Al203
Si3N4
PCB
Polyimide film Al
Ag
Au
Cu
Typical values
Thermal Conductivity [W/m • K]
230
140
Si
180
AIN(SH-30)
AIN(SS23)
54
GaAs
Semiconductor devicesubstrate materials
Metalsubstrates
AINsubstrates
Significant difference inexpansion and contraction
Large force is applied to the device⇨Device performance deteriorates
Turning on and off the devicechanges the temperature
Device and substrate expandand contract
Coefficient of Liner expansion(×10
-6/℃)
5.64.5
5.2
23.5
0
5
10
15
20
25
GaN InP
InAs
17
CuAl
7.5
Sapphire
Typical values
4.5
AIN
6.5
GaAs
4.1
Si
6. High purity (does not contaminate molten metal even at a high temperature)
7. Transparency (allows visible to infrared light to pass through easily)
8. High halogen-plasma resistance
Semiconductor manufacturing equipmentPlasma device parts(Electrostatic) wafer chuck partsStepper wafer holding jig, etc.
TransportationIGBT and GTO heat sink for Automotive power supply substrate (for hybrid cars, etc.) Electric train and locomotive power supply substrate
CommunicationLaser diode heat sink for Transmitters and amplifiers for optical fiber
communication
Lighting and displayLED heat sink
Information processingHeat dissipation sheetComputer heat sinkLaser diode heat sink for Optical disk pickup (CD-R, DVD, etc.)
Industrial machineryIGBT heat sink for Various types of inverter control power supply High-performance elevator High-performance mill
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Tokuyama's AlN line-upFrom "Powder" through "Ceramics"
▲
If you want to make AlN Ceramics, see...▲
1-1 Powder▲
1-2 Granule
▲
If you want to use AlN as filler, see...
▲
1-1 Powder
▲
1-3 Sintered Powder
▲
If you need AlN Ceramics, see...
▲
2-1
▲
2-2 Hi Msoft
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Powder & Granule
● High purity powder which is obtained by Carbo-thermal reduction process
● Many achievements and a wide variety of applications
● Quality product by feedback from our own ceramics production
1-2 High purity Aluminum Nitride Granule
SEM of AlN Granule H-T gradeProperties Units H-T gradeMean particle size µm 75Bulk density g/cm3 0.97Tap density g/cm3 1.09Relief angle ° 31
・Granuled with sintering additives and organic binder
・Ready for press as delivered ・Granule without sintering additives available
1-3 Sintered Aluminum Nitride Powder
Particle Size / µm101
0
5
10
15
100 1000
Freq
uenc
y / %
FAN-f80
FAN-f50
Spherical shape (e.g.: FAN-f80)Grade Units FAN-f50 FAN-f80Particle shape Spherical shape Spherical shapeMean particle size µm 35 〜 60 65 〜 90
・Sintered AlN Granule (H-T grade)
・For filler
1-1 High purity Aluminum Nitride Powder
・High purity
・Sharp distribution
・High sinterability
SEM of AlN Powder H grade
Item H grade E gradeSpecific surface area(m2/g) 2.50 〜 2.68 3.27 〜 3.47Mean particle size(μ m) 1.07 〜 1.17 0.96 〜 1.07
Impurity
O(wt%) 0.78 〜 0.86 0.79 〜 0.88C(ppm) 130 〜 270 220 〜 320Ca(ppm) 200 〜 240 10 〜 22Si(ppm) 39 〜 48 9 〜 13Fe(ppm) 10 〜 14 2 〜 9
Particle size distribution of AlN Powder
Particle Size / µm10.1
0
2
4
6
8
10
10 100
Freq
uenc
y / %
H grade
E grade
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Ceramics
2-2 Machinable ceramics Hi Msoft
2-1 Aluminum Nitride Ceramics
① SH-30・�High�mechanical�strength�AlN�ceramics�with�less�than�1mm�thickness
・�For�heat�sink�of�powder�devices,�LD�and�LED
② SH-15・�High�thermal�conductive�AlN�ceramics�with�more�than�2mm�thickness
・�For�parts�of�semiconductor�manufacturing�equipments
③ SH-50・�High�purity�(without�sintering�additives)�AlN�Ceramics�with�more�than�2mm�thickness
・�For�parts�of�semiconductor�manufacturing�equipments
・�Suitable�to�avoid�pollutions�of�heavy�metals�for�semiconductor�production�equipments
・�Composite�of�AlN�and�BN
・�Good�machinability
Properties Units SH-30 SH-15 SH-50
General properties Density g/cm3 3.34 3.33 3.24
Electrical properties
Volume resistivity Ω・cm 8.4 × 1013 1.1 × 1014 3.1 × 1013
Dielectric constant RT,1MHz − 9.1 9.1 8.9
Dielectric loss RT,1MHz − 2.5 × 10-4 3.0 × 10-4 2.6 × 10-4
Withstand Voltage kV/mm 36.7 31.3 18.7
Thermal properties Thermal conductivity 20℃ W/(m・K) 174 184 86
Mechanical properties Bending strength MPa 511 357 356
Properties Units Hi Msoft
Density g/cm3 2.88
Bending strength MPa 320
Thermal conductivity W/(m・K) 92
Volume resistivity Ω・cm 1.0 × 1014
Dielectric constant 25℃、1MHz − 6.8
Dielectric loss 25℃、1MHz − 1.0 × 10-5
Withstand Voltage kV/mm 56
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*The product specifications appearing in this catalog are subject to change without notice.*The values represented in this catalog are typical values and are not to be interpreted as specifications.
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2012. 03 WEB
TKYM#54_シェイ�ル_英文_カタロ� (210mm).indd 6 12.3.21 10:35:17 AM
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