Download - 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

Transcript
Page 1: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

September 2013 Rev 6 1/18

1

TDA7850

4 x 50 W MOSFET quad bridge power amplifier

Features■ High output power capability:

– 4 x 50 W/4 max.– 4 x 30 W/4 @ 14.4 V, 1 kHz, 10 %– 4 x 80 W/2 max.– 4 x 55 W/2 @ 14.4V, 1 kHz, 10 %

■ MOSFET output power stage

■ Excellent 2 driving capability

■ Hi-Fi class distortion

■ Low output noise

■ ST-BY function

■ Mute function

■ Automute at min. supply voltage detection

■ Low external component count:– Internally fixed gain (26 dB)– No external compensation– No bootstrap capacitors

■ On board 0.35 A high side driver

Protections:

■ Output short circuit to gnd, to Vs, across the load

■ Very inductive loads

■ Overrating chip temperature with soft thermal limiter

■ Output DC offset detection

■ Load dump voltage

■ Fortuitous open gnd

■ Reversed battery

■ ESD

DescriptionThe TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power car radio. The fully complementary P-Channel/N-Channel output structure allows a rail to rail output voltage swing which, combined with high output current and minimized saturation losses sets new power references in the car-radio field, with unparalleled distortion performances.

The TDA7850 integrates a DC offset detector.

Flexiwatt25(Vertical)

Flexiwatt25(Horizontal)

Table 1. Device summary

Order code Package Packing

TDA7850 Flexiwatt25 (Vertical) Tube

TDA7850H Flexiwatt25 (Horizontal Tube

www.st.com

Page 2: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

Contents TDA7850

2/18

Contents

1 Block diagram and application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

1.1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

1.2 Standard test and application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

3.4 Electrical characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4 Application hints . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

4.1 SVR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

4.2 Input stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

4.3 Standby and muting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

4.4 DC offset detector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

4.5 Heatsink definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

5 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Page 3: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

TDA7850 List of tables

3/18

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7Table 4. Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8Table 5. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Page 4: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

List of figures TDA7850

4/18

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5Figure 2. Standard test and application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5Figure 3. Pin connection (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Figure 4. Components and top copper layer of the Figure 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Figure 5. Bottom copper layer Figure 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Figure 6. Quiescent current vs. supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 7. Output power vs. supply voltage (RL = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 8. Output power vs. supply voltage (RL = 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 9. Distortion vs. output power (RL = 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 10. Distortion vs. output power (RL = 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 11. Distortion vs. frequency (RL = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 12. Distortion vs. frequency (RL = 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Figure 13. Crosstalk vs. frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Figure 14. Supply voltage rejection vs. frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Figure 15. Output attenuation vs. supply voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Figure 16. Power dissipation and efficiency vs. output power (RL = 4, SINE) . . . . . . . . . . . . . . . . . 12Figure 17. Power dissipation and efficiency vs. output power (RL = 2, SINE) . . . . . . . . . . . . . . . . . 12Figure 18. Power dissipation vs. output power (RL = 4, audio program simulation) . . . . . . . . . . . . . 13Figure 19. Power dissipation vs. output power (RL = 2, audio program simulation) . . . . . . . . . . . . . 13Figure 20. ITU R-ARM frequency response, weighting filter for transient pop. . . . . . . . . . . . . . . . . . . 13Figure 21. Flexiwatt25 (vertical) mechanical data and package dimensions. . . . . . . . . . . . . . . . . . . . 15Figure 22. Flexiwatt25 (horizontal) mechanical data and package dimensions. . . . . . . . . . . . . . . . . . 16

Page 5: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

TDA7850 Block diagram and application circuit

5/18

1 Block diagram and application circuit

1.1 Block diagram

Figure 1. Block diagram

1.2 Standard test and application circuit

Figure 2. Standard test and application circuit

IN1

0.1μF

MUTE

ST-BY

IN2

0.1μF

OUT1+

OUT1-

OUT2+

OUT2-

PW-GND

IN3

0.1μF

IN4

0.1μF

OUT3+

OUT3-

OUT4+

OUT4-

PW-GND

PW-GND

PW-GND

D94AU158D

AC-GND

0.47μF 47μF

SVR TAB S-GND

Vcc1 Vcc2100nF470μF

HSD/VOFF_DETHSD

IN1

0.1μF

C91μF

IN2

C2 0.1μF

OUT1

OUT2

IN3

C3 0.1μF

IN4

C4 0.1μF

OUT3

OUT4

D95AU335C

C50.47μF

C647μF

SVR TAB

Vcc1-2 Vcc3-4

C80.1μF

C72200μF

C101μF

ST-BYR1

10K

R3*)

R2

47KMUTE

C1

14

15

12

11

22

4

13S-GND

16 10 25 1

HSD/OD

6 20

9

8

7

5

2

3

17

18

19

21

24

23

*) R3 = 10kΩ to be placed when pin 25 is used as offset detector.

Page 6: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

Pin description TDA7850

6/18

2 Pin description

Figure 3. Pin connection (top view)

D94AU159A

TAB

P-GND2

OUT2-

ST-BY

OUT2+

VCC

OUT1-

P-GND1

OUT1+

SVR

IN1

IN2

S-GND

IN4

IN3

AC-GND

OUT3+

P-GND3

OUT3-

VCC

OUT4+

MUTE

OUT4-

P-GND4

HSD

1

25

D06AU1655

TAB

P-GND2

OUT2-

ST-BY

OUT2+

VCC

OUT1-

P-GND1

OUT1+

SVR

IN1

IN2

S-GND

IN4

IN3

AC-GND

OUT3+

P-GND3

OUT3-

VCC

OUT4+

MUTE

OUT4-

P-GND4

HSD

1

25

Vertical

Horizontal

Page 7: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

TDA7850 Electrical specifications

7/18

3 Electrical specifications

3.1 Absolute maximum ratings

3.2 Thermal data

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VS Operating supply voltage 18 V

VS (DC) DC supply voltage 28 V

VS (pk) Peak supply voltage (for t = 50 ms) 50 V

IO

Output peak currentrepetitive (duty cycle 10 % at f = 10 Hz)non repetitive (t = 100 s)

9

10

A

A

Ptot Power dissipation Tcase = 70 °C 80 W

Tj Junction temperature 150 °C

Tstg Storage temperature -55 to 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rth j-case Thermal resistance junction to case Max. 1 °C/W

Page 8: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

Electrical specifications TDA7850

8/18

3.3 Electrical characteristics

Table 4. Electrical characteristics (Refer to the test and application diagram, VS = 14.4 V; RL = 4 ; Rg = 600 ; f = 1 kHz;Tamb = 25 °C; unless otherwise specified).

Symbol Parameter Test condition Min. Typ. Max. Unit

Iq1 Quiescent current RL = 100 180 280 mA

VOS Output offset voltage Play mode / Mute mode ±50 mV

dVOS

During mute ON/OFF output offset voltage ITU R-ARM weighted

see Figure 20

-10 +10 mV

During Standby ON/OFF output offset voltage

-10 +10 mV

Gv Voltage gain 25 26 27 dB

dGv Channel gain unbalance ±1 dB

Po Output power

VS = 13.2 V; THD = 10 %

VS = 13.2 V; THD = 1 %

VS = 14.4 V; THD = 10 %VS = 14.4 V; THD = 1 %

23

16

2820

25

19

3023

W

VS = 14.4 V; THD = 10 %, 2 50 55 W

Po max. Max. output power(1) VS = 14.4 V; RL = 4 VS = 14.4 V; RL = 2

50

85W

THD DistortionPo = 4W

Po = 15W; RL = 20.006

0.015

0.02

0.03%

eNo Output noise"A" Weighted

Bw = 20 Hz to 20 kHz

35

50

50

70V

SVR Supply voltage rejection f = 100 Hz; Vr = 1Vrms 50 75 dB

fch High cut-off frequency PO = 0.5 W 100 300 KHz

Ri Input impedance 80 100 120 K

CT Cross talkf = 1 kHz PO = 4 W

f = 10 kHz PO = 4 W

60 70

60

-

-dB

ISB Standby current consumptionVST-BY = 1.5 V 20

AVST-BY = 0 V 10

Ipin5 ST-BY pin current VST-BY = 1.5 V to 3.5 V ±1 A

VSB out Standby out threshold voltage (Amp: ON) 2.75 V

VSB in Standby in threshold voltage (Amp: OFF) 1.5 V

AM Mute attenuation POref = 4 W 80 90 dB

VM out Mute out threshold voltage (Amp: Play) 3.5 V

VM in Mute in threshold voltage (Amp: Mute) 1.5 V

Page 9: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

TDA7850 Electrical specifications

9/18

VAM in VS automute threshold

(Amp: Mute)Att 80 dB; POref = 4 W

(Amp: Play)

Att < 0.1 dB; PO = 0. 5W

6.5 7

7.5 8

V

Ipin23 Muting pin current

VMUTE = 1.5 V

(Sourced Current)7 12 18 A

VMUTE = 3.5 V -5 18 A

HSD section

Vdropout Dropout voltage IO = 0.35 A; VS = 9 to 16 V 0.25 0.6 V

Iprot Current limits 400 800 mA

Offset detector (Pin 25)

VM_ON Mute voltage for DC offset detection enabled

VST-BY = 5 V8 V

VM_OFF 6 V

VOFF Detected differential output offset VST-BY = 5 V; Vmute = 8 V ±2 ±3 ±4 V

V25_TPin 25 voltage for detection = TRUE

VST-BY = 5 V; Vmute = 8 V

VOFF > ±4 V0 1.5 V

V25_FPin 25 Voltage for detection = FALSE

VST-BY = 5 V; Vmute = 8 V

VOFF > ±2 V12 V

1. Saturated square wave output.

Table 4. Electrical characteristics (continued)(Refer to the test and application diagram, VS = 14.4 V; RL = 4 ; Rg = 600 ; f = 1 kHz;Tamb = 25 °C; unless otherwise specified).

Symbol Parameter Test condition Min. Typ. Max. Unit

Page 10: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

Electrical specifications TDA7850

10/18

Figure 4. Components and top copper layer of the Figure 2.

Figure 5. Bottom copper layer Figure 2.

Page 11: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

TDA7850 Electrical specifications

11/18

3.4 Electrical characteristic curves

Figure 6. Quiescent current vs. supply voltage

Figure 7. Output power vs. supply voltage (RL = 4)

Figure 8. Output power vs. supply voltage (RL = 2)

Figure 9. Distortion vs. output power (RL = 4)

Figure 10. Distortion vs. output power(RL = 2)

Figure 11. Distortion vs. frequency(RL = 4)

AC00064Vs (V)

100

110

120

130

140

150

160

170

180

190

200

8 10 12 14 16 18

Vi = 0RL = ∞

Id (mA)

5

10

15

20

25

30

35

40

45

50

55

60

65

70

75

80

8 9 10 11 12 13 14 15 16 17 18

Po (W)

Vs (V)

RL= 4Ω f = 1 KHz

Po-max

THD= 10%

THD= 1%

AC00064

AC00066

0

10

20

30

40

50

60

70

80

90

100

110

120

130

8 9 10 11 12 13 14 15 16 17 18

Vs (V)

Po (W)

Po-max

THD=10%

THD=1%

RL= 2Ω f = 1 KHz

AC00067

0.001

0.01

0.1

1

10

0.1 1 10 100

Po (W)

THD (%)

VS = 14.4 VRL = 4Ω

f = 1 KHz

f = 10 KHz

AC00068

0.001

0.01

0.1

1

10

0.1 1 10 100

Po (W)

THD (%)

VS = 14.4 VRL = 2Ω

f = 10 KHz

f = 1 KHz

AC00069

0.001

0.01

0.1

1

10

10 100 1000 10000 100000

f (Hz)

THD (%)

VS = 14.4 VRL = 4Ω Po = 4 W

Page 12: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

Electrical specifications TDA7850

12/18

Figure 12. Distortion vs. frequency(RL = 2)

Figure 13. Crosstalk vs. frequency

Figure 14. Supply voltage rejection vs. frequency

Figure 15. Output attenuation vs. supply voltage

Figure 16. Power dissipation and efficiency vs. output power (RL = 4, SINE)

Figure 17. Power dissipation and efficiency vs. output power (RL = 2, SINE)

AC00070

0.001

0.01

0.1

1

10

10 100 1000 10000 100000

f (Hz)

THD (%)

VS = 14.4 VRL = 2Ω Po = 8 W

-100

-90

-80

-70

-60

-50

-40

-30

-20

10 100 1000 10000 100000

RL = 4Ω Po = 4 WRg = 600Ω

f (Hz)

CROSSTALK (dB)

AC00071

AC00072

-100

-90

-80

-70

-60

-50

-40

-30

-20

10 100 1000 10000 100000

f (Hz)

SVR (dB)

Rg = 600Ω Vripple = 1 Vrms

AC00073

-100

-80

-60

-40

-20

0

5 6 7 8 9 10

Vs (V)

OUTPUT ATTN (dB)

RL = 4Ω Po = 4 W ref

AC00074

0

10

20

30

40

50

60

70

80

90

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

Ptot (W) η (%)

Po (W)

0

10

20

30

40

50

60

70

80

90

Ptot

ηVS = 14.4 VRL = 4 x 4Ω f = 1 KHz SINE

AC00075

0

20

40

60

80

100

120

140

160

180

0 5 10 15 20 25 30 35 40 45 50 550

10

20

30

40

50

60

70

80

90Ptot (W) η (%)

Po (W)

Ptot

ηVS = 14.4 VRL = 4 x 2Ω f = 1 KHz SINE

Page 13: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

TDA7850 Electrical specifications

13/18

Figure 18. Power dissipation vs. output power (RL = 4, audio program simulation)

Figure 19. Power dissipation vs. output power (RL = 2, audio program simulation)

Figure 20. ITU R-ARM frequency response, weighting filter for transient pop

AC00076

5

10

15

20

25

30

0 1 2 3 4 5 6

VS = 13.2 VRL = 4 x 4Ω GAUSSIAN NOISE

CLIP START

Ptot (W)

Po (W) AC00077

5

10

15

20

25

30

35

40

45

50

55

60

0 2 4 6 8 10

VS = 13.2 VRL = 4 x 2Ω GAUSSIAN NOISE

CLIP START

Ptot (W)

Po (W)

Output attenuation (dB)

-50

-40

-30

-20

-10

0

10

10 100 1000 10000 100000

Hz AC00343

Page 14: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

Application hints TDA7850

14/18

4 Application hintsReferred to the circuit of Figure 2.

4.1 SVRBesides its contribution to the ripple rejection, the SVR capacitor governs the turn ON/OFF time sequence and, consequently, plays an essential role in the pop optimization during ON/OFF transients. To conveniently serve both needs, Its minimum recommended value is 10µF.

4.2 Input stageThe TDA7850's inputs are ground-compatible and can stand very high input signals (± 8Vpk) without any performance degradation. If the standard value for the input capacitors (0.1µF) is adopted, the low frequency cut-off will amount to 16 Hz.

4.3 Standby and mutingStandby and Muting facilities are both CMOS compatible. In absence of true CMOS ports or microprocessors, a direct connection to Vs of these two pins is admissible but a 470k equivalent resistance should be present between the power supply and the muting andST-BY pins. R-C cells have always to be used in order to smooth down the transitions for preventing any audible transient noises. About the standby, the time constant to be assigned in order to obtain a virtually pop-free transition has to be slower than 2.5 V/ms.

4.4 DC offset detectorThe TDA7850 integrates a DC offset detector to avoid that an anomalous DC offset on the inputs of the amplifier may be multiplied by the gain and result in a dangerous large offset on the outputs which may lead to speakers damage for overheating. The feature is enabled by the MUTE pin (according to table 3) and works with the amplifier unmuted and with no signal on the inputs. The DC offset detection is signaled out on the HSD pin. To ensure the correct functionality of the Offset Detector it is necessary to connect a pulldown 10 kW resistor between HSD and ground.

4.5 Heatsink definitionUnder normal usage (4 Ohm speakers) the heatsink's thermal requirements have to be deduced from Figure 18, which reports the simulated power dissipation when real music/speech programmes are played out. Noise with gaussian-distributed amplitude was employed for this simulation. Based on that, frequent clipping occurrence (worst-case) will cause Pdiss = 26 W. Assuming Tamb = 70 °C and TCHIP = 150 °C as boundary conditions, the heatsink's thermal resistance should be approximately 2°C/W. This would avoid any thermal shutdown occurrence even after long-term and full-volume operation.

Page 15: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

TDA7850 Package information

15/18

5 Package information

In order to meet environmental requirements, ST (also) offers these devices in ECOPACK® packages. ECOPACK® packages are lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label.

ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.

Figure 21. Flexiwatt25 (vertical) mechanical data and package dimensions

OUTLINE ANDMECHANICAL DATA

DIM. mm inchMIN. TYP. MAX. MIN. TYP. MAX.

A 4.45 4.50 4.65 0.175 0.177 0.183B 1.80 1.90 2.00 0.070 0.074 0.079C 1.40 0.055D 0.75 0.90 1.05 0.029 0.035 0.041E 0.37 0.39 0.42 0.014 0.015 0.016

F (1) 0.57 0.022G 0.80 1.00 1.20 0.031 0.040 0.047G1 23.75 24.00 24.25 0.935 0.945 0.955

H (2) 28.90 29.23 29.30 1.139 1.150 1.153H1 17.00 0.669H2 12.80 0.503H3 0.80 0.031

L (2) 22.07 22.47 22.87 0.869 0.884 0.904L1 18.57 18.97 19.37 0.731 0.747 0.762

L2 (2) 15.50 15.70 15.90 0.610 0.618 0.626L3 7.70 7.85 7.95 0.303 0.309 0.313L4 5 0.197L5 3.5 0.138M 3.70 4.00 4.30 0.145 0.157 0.169M1 3.60 4.00 4.40 0.142 0.157 0.173N 2.20 0.086O 2 0.079R 1.70 0.067R1 0.5 0.02R2 0.3 0.12R3 1.25 0.049R4 0.50 0.019

V1 3˚ (Typ.)V 5˚ (T p.)

V2 20˚ (Typ.)V3 45˚ (Typ.)

(2): molding protusion included(1): dam-bar protusion not included

Flexiwatt25 (vertical)

H3

R4

G

V

G1

L2

H1H

FM1

L

FLEX25ME

V3

OL3

L4

H2

R3

N

V2

R

R2

R2

C

B

L1

M

R1

L5 R1 R1

E

D

A

Pin 1

V

V1

V1

7034862

Page 16: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

Package information TDA7850

16/18

Figure 22. Flexiwatt25 (horizontal) mechanical data and package dimensions

OUTLINE ANDMECHANICAL DATA

DIM. mm inchMIN. TYP. MAX. MIN. TYP. MAX.

A 4.45 4.50 4.65 0.175 0.177 0.183B 1.80 1.90 2.00 0.070 0.074 0.079C 1.40 0.055D 2.00 0.079E 0.37 0.39 0.42 0.014 0.015 0.016

F (1) 0.57 0.022G 0.75 1.00 1.25 0.029 0.040 0.049G1 23.70 24.00 24.30 0.933 0.945 0.957

H (2) 28.90 29.23 29.30 1.139 1.150 1.153H1 17.00 0.669H2 12.80 0.503H3 0.80 0.031

L (2) 21.64 22.04 22.44 0.852 0.868 0.883L1 10.15 10.5 10.85 0.40 0.413 0.427

L2 (2) 15.50 15.70 15.90 0.610 0.618 0.626L3 7.70 7.85 7.95 0.303 0.309 0.313L4 5 0.197L5 5.15 5.45 5.85 0.203 0.214 0.23L6 1.80 1.95 2.10 0.070 0.077 0.083M 2.75 3.00 3.50 0.108 0.118 0.138M1 4.73 0.186M2 5.61 0.220N 2.20 0.086P 3.20 3.50 3.80 0.126 0.138 0.15R 1.70 0.067R1 0.50 0.02R2 0.30 0.12R3 1.25 0.049R4 0.50 0.02V 5� (Typ.)V1 3� (Typ.)V2 20� (Typ.)V3 45� (Typ.)

Flexiwatt25(Horizontal)

7399733 C

(1): dam-bar protusion not included; (2): molding protusion included

Page 17: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

TDA7850 Revision history

17/18

6 Revision history

Table 5. Document revision history

Date Revision Changes

22-Nov-2006 1 Initial release.

27-Feb-2007 2 Added Chapter 3.4: Electrical characteristic curves.

09-Oct-2007 3Updated the values for the dVOS and Iq1 parameters on the Table 4. Added Figure 20 on page 13.

12-Sep-2008 4

Updated Figure 2: Standard test and application circuit.Updated Section 4.4: DC offset detector and Section 4.3: Standby and muting.Updated the values of VOS and THD parameters on the Table 4.

07-Nov-2008 5Modified max. values of the THD distortion in Table 4: Electrical characteristics on page 8.

17-Sep-2013 6 Updated Disclaimer.

Page 18: 4 x 50 W MOSFET quad bridge power amplifier - st.com · The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt 25 package designed for high power

TDA7850

18/18

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve theright to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at anytime, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes noliability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of thisdocument refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party productsor services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of suchthird party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately voidany warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, anyliability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2013 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com