ZrB 2 表面上のシリセンの電子状態計算

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ZrB 2 表表表表表表表表表表表表表表表 Y. Yamada-Takamura et al., PRL 95, 266105 (2005). Y. Yamada-Takamura et al., APL 97, 073109 (2010). A. Fleurence et al., PRL 108, 245501 (2012). Contents 表表 表表 表表表表 表表表表 JAIST Chi-Cheng Lee Hiroyuki Kawai Taisuke Ozaki 表表 JAIST Antoine Fleurence Rainer Friedlein Yukiko Yamada-Takamura

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ZrB 2 表面上のシリセンの電子状態計算. Contents. 導入 実験 第一原理計算. 実験 JAIST Antoine Fleurence Rainer Friedlein Yukiko Yamada-Takamura. 第一原理計算 JAIST Chi-Cheng Lee Hiroyuki Kawai Taisuke Ozaki. Y. Yamada-Takamura et al., PRL 95, 266105 (2005). - PowerPoint PPT Presentation

Transcript of ZrB 2 表面上のシリセンの電子状態計算

  • ZrB2Y. Yamada-Takamura et al., PRL 95, 266105 (2005). Y. Yamada-Takamura et al., APL 97, 073109 (2010). A. Fleurence et al., PRL 108, 245501 (2012).Contents JAIST Chi-Cheng LeeHiroyuki Kawai Taisuke OzakiJAIST Antoine Fleurence Rainer Friedlein Yukiko Yamada-Takamura

  • C: GrapheneSi: SiliceneGe: GermaneneDirac cone

  • ~0.1 eV~0.5 eV

  • CSiDiamond Graphene Si

  • S. Cahangirov et al., Phys. Rev. Lett. 102, 236804 (2009). Si, Ge :Low buckled (LB), High buckled (HB) LBDirac coneSiGe

  • ZrB2SiliceneSiZrB2GaNGaN(0001): a= 3.189ZrB2(0001): a= 3.187200GaNZrB2 on Si(111) ()ZrB2SiSiSiZrB2 ()STM imageA. Fleurence et al., PRL 108, 245501 (2012).A. Fleurence et al., Physica Status Solidi (c) 8, 779-783 (2011).

  • SiSi 2p3/2Si 2p1/2BCARelative binding energy (eV) Intensity (a.u.) 325%135%555%ABCSi 2p Si

    A:B:C 2:3:1

  • ZrSiZrB2[1100]ZrB2[1120]--STMSTM(22)A:B:C = 2:3:1

  • SiA/BC/B[11-20]A/BSiASiB

  • ZrB2(0001)-(1x1)ZrB2(0001)-(2x2)silicene-(1x1)M(22)ZrB2Si-K(11)

  • OpenMXLCPAOGGA

    STM Tersoff-Hamman

    Si-2p Si-2p

    :: NEB(a=3.187)(Zr: 7, B: 6)

  • ZrB2BulkSlabBlack: TotalRed: Zr-d

  • ZrB2 (0001) Si2.57 (Si height) 1.97 (Si height) 2.68 2.61 2.07 (Si height) Ebinding= 5.05 eVEbinding= 6.08 eVEbinding= 5.79 eVSiOn-top Hollow Bridge

  • CBBABABCBB 1Ebind=1.14 eV/ Si atom 2 Ebind=1.42 eV/Si atomNEB

  • 12: Top view

  • Tersoff-HammanSTM1SiB(bridge) V=100mV2SiC(on-top) The calculations were performed by the Tersoff-Hamman approximation, and an isovalue of 8x10-7 e/bohr3 was used for generation of the height profile for both the cases.V=+300mVV=+300mV

  • Si-2p 1ABC 2ABC

  • Isovalue=0.01MKMThe wave functions just below Fermi level at ZrB2(2x2)--point(=Si(11)-K-point))are attributed to silicene.

  • PRL 108, 245501 (2012)Domain boundary might be the most important factorin revealing the realistic ground state by DFT calculation Domain boundary might be important?

  • Comparison between Expt. and TheoryModel 1 Model 2Relative energy(eV/(2x2) cell) 0 -1.589STM image Disagreement At least the position of the bright spot agreedChemical shift of Si-2pAgreement AgreementBand structure Large distortion of ZrB2 surface bandZrB2 surface band and X2 band reproducedRelative height of SiA and SiBAgreementSiA SiB