X Parameter Webcast 2011 Final

8/13/2019 X Parameter Webcast 2011 Final

1/47

1

Dr. Loren Betts

Research Scientist

Agilent Technologies


2/47

Page 2

July 2009

Agilent EEsof EDA Overview

*X-parameters is a trademark of Agilent Technologies, Inc.

Innovations in EDA Webcast Series

X-Parameter* Case Study:GaN High Power Amplif ier Design

Dr. Loren Betts

Research ScientistAgilent Technologies

Agilent Technologies, Inc. 2011


3/47

Capturing the Imagination of the Industry

Solves real-worldproblems now

Interoperable

characterization,

modeling, and design

solutions

Does for nonlinear

design what

S-parameters do for

linear design

Changing the waythe industry works

Continuous wave

of innovations and

award-winning

research

Page 3


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Presentation Outline

Amplifier Design Considerations using X-parameters Industry Challenges

Introduction to X-parameters

End-to-End Power Amplifier Design with X-parameters

Load-Dependent X-parameters

High Power X-parameter Measurement Configuration Final PA Results

Page 4


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Solutions: Next Generation Communication Systems

Power Amplifier Industry Challenges: Research & development of new semiconductor processes for

next generation components

Develop smaller, higher power, more efficient active devicedesigns

Reduce cost and the development time to bring product tomarket

Issues:

Components are exhibiting more & more nonlinear behavior

(often by design to increase efficiency) Models of newer technologies (such as GaN) may not exist or

may not provide an accurate description of all the componentbehavior.

Page 5
http://visuals.soco.agilent.com/scripts/CUWP_CGI.EXE/3-DHA0005-Cotati%20Tower.tif?directArg=ALN1606983150,3-DHA0005-Cotati%20Tower.tif


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VSWR=2.5

max

ACPR

(accuracy


7/47

Evolution of the Tools & Measurements

Page 7

TOOLS:

NA

SA/SS/NFAPower meter

Oscilloscope

DC Parametric Analyzer

MEASUREMENTS:

Gain compression, IP3, IMD

PAE, ACPR, AM-PM, BERConstellation Diagram, EVM

GD, NF, Spectral Re-growth

ACLR, Hot S22

Source and Load-Pull

S-Parameters

TOOLS:

Vector Network

Analyzer

MEASUREMENTS:

Gain

Input match

Output match

Isolation

TransconductanceInput capacitance

S-Parameters +

Figures of Merit

TOOLS:

SS & Oscilloscope

Grease pens andPolaroid cameras

Slotted line

Power meter

MEASUREMENTS:

Bode plots

GainSWR

Scalar network analyzers

Y & Z parameters

PatchworkNVNA

X-Parameters


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Nonlinear Component Behavior

Page 8

2A1A

1B 2B

and you want to build a system by

cascading components together.


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Incident TransmittedS 21

S 11

Reflected S 22

Reflected

Transmitted Incident

b 1

a 1b 2

a 2S 12

DUT

Port 1 Port 2

S-parameters

b1 = S11a1 + S12a2

b2 = S21a1 + S22a2

S-parameters:Linear Measurement, Modeling & Simulation

Page 9

Linear Simulation:

Matrix Multiplication

Measure with l inear VNA:

Small amplitude sinusoids

Model

Parameters:

Simple algebra

0k

i

ij

ajk j

bS

a =

=


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S-parameter measurements require that the S-parameters

of the device do not change during measurement

Page 10

1 11 12 1

2 21 22 2

b S S a

b S S a

=

1 11 1 12 2

2 21 1 22 2

b S a S a

b S a S a

= +

= +

S-Parameter Definition

To solve, VNAs traditionally use a forwardand reverse sweep (2 port error correction).

21S

12S

11S 22S

10

1e

01

1e

00

1e

11

1e

0

1a

0

1b

1

1a

1

1b

01

2e

10

2e

11

2e

00

2e

1

2b

1

2a

0

2b

0

2a

( )x t ( )y t

bi= S

ik a

k

k


11/47

S11

S12

S21

S22

=

b1

fwdb

1

rev

b2

fwdb

2

rev

a1

fwda

1

rev

a2

fwda

2

rev

1

If the S-parameters change .(when sweeping in the forward and reverse directions when performing 2 por t error correction)

then the resulting computation of the S-parameters are invalid

Page 11

b1

fwd b1

rev

b2

fwdb

2

rev

=

S11

S12

S21

S22

a1

fwd a1

rev

a2

fwda

2

rev

1 11 12 1

2 21 22 2

b S S ab S S a =

1 11 1 12 2

2 21 1 22 2

b S a S a

b S a S a

= +

= +Hot S22

This is often why customers areasking for Hot S22 because the matchis changing versus input drive powerand frequency (Nonlinearphenomena). Hot S22 traditionallymeasured at a frequency slightly offset

from the large input drive signal.This still does not provide thecomplete picture. X-parameters arethe solution.

( )x t ( )y t


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Measure X-parameters

-or-

Generate X-parameters from

circuit-level designs

X-parameter Component :

Simulate using X-

parameters

ADS, SystemVue & Genesys:

Design using X-parameters

X-parameters revolutionize the Characterization, Design,

and Modeling of nonlinear components and systems

X-parameters are the mathematically correct extension of S-parameters to large-signal conditions.

Measurement and simulation based, device independent, identifiable from a simple

set of automated NVNA measurements or directly from ADS circuit-level designs

Fully nonlinear (Magnitude and phase of distortion)

Cascadable (correct behavior in even highly mismatched environment)

Extremely accurate for high-frequency, distributed nonlinear devices

Page 12


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X-parameters

Page 13

1 1 11 12 21 22( , , ,..., , ,...)k kB F DC A A A A=

2 2 11 12 21 22( , , ,..., , ,...)

k kB F DC A A A A=

Port Index

Harmonic (or carrier) Index

The X-parameters provide a mathematically correct mapping of the A and B

waves at ports, input powers, harmonics, DC bias, etc, etc.

2A1A

1B 2B

Unifies

S-parameters

Load-Pull,

Time-domain

load-pull


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X-Parameters Linear and Nonlinear System Description

( )*

, (1,1)

( ) ( ) ( )

11 , 11 , 11( ) ( ) ( )

j j l j l

ij kl klk l

F S T

ij ij kl ij klb P P aA PA aAX X X

+

= + +

S-Parameters Linear System Description1 11 1 12 2

2 21 1 22 2

b S a S a

b S a S a

= +

= +bi= S

ika

kk

Scattering Parameters

Page 14

Definitions

i = output port index

j = output f requency index

k = input port index

l = input frequency index

(#1)frequencylfundamentaat the#1)(portportinputamplifierthetodrivesignalLarge11 =A

For example:

Means: output port = 2

output frequency = 1 (fundamental)

input port = 2

input frequency = 1 (fundamental)

X21,21T


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NVNA

Data File

ADS

Design and Simulation

X-parameter blocks

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-30

-20

-10

0

-40

10

.

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-60

-50

-40

-30

-20

-10

0

-70

10

.

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

5

10

15

20

0

25

.

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

70

71

72

73

74

75

69

76

.

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-135

-130

-125

-120

-140

-115

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

0

2

4

6

8

10

12

-2

14

.

.

- 2 8 - 2 6 - 2 4 - 2 2 - 2 0 - 1 8 - 1 6 - 1 4 - 1 2 - 1 0 - 8 - 6-30 -4

-80

-70

-60

-50

-40

-30

-90

-20

.

.

- 2 8 - 2 6 - 2 4 - 2 2 - 2 0 - 1 8 - 1 6 - 1 4 - 1 2 - 10 - 8 - 6-30 -4

-100

-80

-60

-40

-120

-20

.

.

- 2 8 - 2 6 - 24 - 2 2 - 2 0 - 1 8 - 16 - 1 4 - 1 2 - 10 - 8 - 6-30 -4

-40

-35

-30

-25

-20

-45

-15

.

.

- 2 8 - 2 6 - 2 4 - 2 2 - 2 0 - 1 8 - 1 6 - 1 4 - 1 2 - 1 0 - 8 - 6-30 -4

130

140

150

160

120

170

.

.

- 2 8 - 2 6 - 2 4 - 2 2 - 2 0 - 1 8 - 1 6 - 1 4 - 1 2 - 1 0 - 8 - 6-30 -4

130

135

140

145

125

150

.

.

- 2 8 - 2 6 - 2 4 - 2 2 - 2 0 - 1 8 - 16 - 1 4 - 1 2 - 10 - 8 - 6-30 -4

120

122

124

126

128

130

132

134

118

136

.

.

X-parameters enable accurate nonlinear

simulation under small to moderate

mismatch. (See later for large mismatch)

-10 - 5 0 5 10 1 5-15 20

-30

-20

-10

0

10

-40

20

.

.

allowing prediction of component behavior in

complicated nonlinear circuits.

IMD / ACPR exact in narrow-band limit

Nonlinear Measurements

X-parameters enable predictive nonlinear design from NL data

X-parameters: the same use model as S-parameters but much more powerful

Measurement-Based Modeling & Design Flow

Page 15


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Presentation Outline

Amplifier Design Considerations using X-parameters

Industry Challenges

Introduction to X-parameters

End-to-End Power Amplifier Design with X-parameters

Load-Dependent X-parameters

High Power X-parameter Measurement Configuration

Final PA Results

Page 16


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X-Parameters definition with port 2 gamma dependence

bij

=Xij

(F)(DC,A11,

2)Pj +

Xij,kl

(S) (DC,A11,

2)P

j l akl

+Xij,kl

(T) (DC,A11,

2)P

j+ l akl

*( )k,l(1,1)

Load-Dependent X-parametersSome components (un-matched transistors) may require input and output

tuners because their match is far from 50 ohm.

This requires an X-parameter model that also includes dependence on theload impedance supplied to the output of the component. This is

accomplished by adding an impedance tuner to the output of the component.

Depending on the component, and the class of operation, a multi-harmonic

tuner may not be required.

The source tuner can be fixed at a single impedance that is close to the

conjugate match point and a power sweep performed to vary the available

power to the component.

Page 17


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2

1,fixed

A

11

A11 is swept through

a power sweep

2 is swept through

a set of fundamental

frequency impedances

supplied by tuner. All otherharmonic impedances

are uncontrolled

Load-Dependent X-parameter Measurements

Page 18


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0.2 0.4 0.6 0.80.0 1.0

0

5

10

15

-5

20

0.10

0.15

0.20

0.25

0.05

0.30

time, nsec

MeasuredCurrentM

easuredVoltage

SimulatedVoltage

SimulatedCurrent

Measured and Simulated Voltage and Current Waveforms

0.2 0.4 0.6 0.80.0 1.0

4

68

10

12

14

2

16

0.1

0.2

0.3

0.4

0.0

0.5

time, nsec

Measured

CurrentM

easu

redVoltage

Simula

tedVoltage

Simulated

Current

Measured and Simulated Voltage and Current Waveforms

0 2 4 6 8 10 12 14 16-2 18

0.10

0.15

0.20

0.25

0.05

0.30

MeasuredVoltage

MeasuredCurrent

SimulatedVoltage

Simu

latedCurrent

Measured and Simulated Dynamic Load Line

Experimental Harmonic Balance X-parameters unify S-parameters and load-pull

Measurements X-par Simulation

Pout Contour(dBm)

G. Simpson et al IEEE ARFTG Conference, December, 2008

Load-Dependent X-Parameters of a FET

Page 19


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Fundamental Output Magnitude Second Harmonic Output Magnitude

X-Parameter Prediction: Blue

Measured with Harmonic Load Pull System: Red

J. Horn et al, IEEE Power Amplifier Symposium, September, 2009

Harmonic load-pull may be unnecessary! Simpler, cheaper, faster alternatives exist

Contours vs. 2nd

Harmonic Load

(Fixed input power

and fundamental load)

Cree CGH40010 10 WRF Power GaN HEMT

X-parameter Harmonic Load-Tuning Predictions

Page 20


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PNA-X

Maury

Software

DUTMaury

Tuner

USB

DC Supply

GPIB

Bias

Tees

NVNA

Firmware

Maury

Tuner

9 load states at f1

Cree

CGH40010GaN HEMT

10 W packaged

transistor

900 MHz Measure Load-dependent

X-parameters

vs power at 9 impedances

4 harmonics measured

probe tones at 2nd and 3rd

harmonics

harmonic impedances

uncontrolledX-parameter file taken into ADS

for independent validation

GaN HEMT Load-Dependent X-parameter Model

Page 21


22/47

PNA-X

Maury

Software

DUTMaury

Tuner Z1

USB

DC Supply

GPIB

Bias

Tees

NVNA

Firmware

Maury

Tuner

Maury

Tuner Z2

Maury

Tuner Z3

9 states 9 states 9 states

Waveforms measured

versus power at each setof 729 harmonic loads as

controlled independently

by the tuners.

Fundamental, second,

and third complex

impedances setindependently

J. Horn et al CSICS2010, Oct. 2010

Harmonic Load-pull Setup: For Validation Only

Page 22


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Harmonic load-pull

measurements

Load-dependent X-parameters

One output tuner to vary load at

fundamental frequency. At each load

inject small tones at 2nd and 3rd

harmonic frequencies

(9x(1+2x2) = 45 measurements,actually ~125 measurements)

Measured DC 4th harmonic

Take into ADS. Present 729

independent loads to model

Three output tuners to vary

loads at fundamental, second,

and third harmonics

independently

(9x9x9 = 729 measurements)

Measured DC - 4th harmonic

Compare waveforms, PAE, dynamic load-lines, etc.

Load-Dependent X-parameters Vs. Harmonic Load-pull

Page 23


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6 8 10 12 14 16 184 20

20

30

40

50

60

70

10

80

Z1Z2Z3 Cree

CGH40010

GaN HEMT

PAE

Pin (available)

10 20 30 40 50 600 70

0.0

0.5

1.0

1.5

-0.5

2.0

Id [A]

Vd [V]

Harmonic loads

X-parameter model

Harmonic time-domain load-pull measurements

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.0 2.4

10

20

30

40

50

60

0

70

0.0

0.5

1.0

1.5

-0.5

2.0

Time (nanoseconds)

VdId

VdId

Courtesy of J. Horn

Prediction of GaN HEMT Harmonic Load-dependence from

Fundamental-only Load-dependent X-parameters

Page 24


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6 8 10 12 14 16 184 20

20

30

40

50

60

10

70

Prediction of GaN HEMT Harmonic Load-dependence

from Fundamental-only Load-dependent X-parameters

Page 25

0 10 20 30 40 50 60-10 70

.0

.5

.0

.5

.5

.0

Z1Z2Z3

CreeCGH40010

GaN HEMT

PAE

Id [A]

Vd [V]

Pin (available)

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.0 2.4

0

10

20

30

40

50

60

-10

70

0.0

0.5

1.0

1.5

-0.5

2.0

VdId

VdId

Time (nanoseconds)

Harmonic loads

Vary second harmonic output impedance (keep others fixed)


26/47

6 8 10 12 14 16 184 20

20

30

40

50

60

10

70

.

10 20 30 40 50 600 70

-0.5

0.0

0.5

1.0

1.5

-1.0

2.0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.0 2.4

10

20

30

40

50

60

0

70

-0.5

0.0

0.5

1.0

1.5

-1.0

2.0

Z1Z2Z3



Page 26

Cree

CGH40010

GaN HEMT

PAE

Id [A]

Vd [V]

VdId

VdId

Pin (available)

Time (nanoseconds)

Harmonic loads


27/47

6 8 10 12 14 16 184 20

20

30

40

50

60

10

70

_

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.0 2.4

10

20

30

40

50

60

0

70

0.0

0.5

1.0

1.5

-0.5

2.0

10 20 30 40 50 600 70

0.0

0.5

1.0

1.5

0.5

2.0



Page 27

Z1Z2Z3

Cree

CGH40010

GaN HEMT

PAE

Id [A]

Vd [V]

VdId

VdId

Pin (available)

Time (nanoseconds)

Harmonic loads

Vary third harmonic output impedance (keep others fixed)


28/47

Implications of Arbitrary Load-dependent X-parameters

Input and output harmonic load tuning dependence predictable

Harmonic load-pull may be unnecessary for many apps.

Source pull may be unnecessary (apart from power transfer)

Complementary approach to compact nonlinear device models

Page 28


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Power Amplifier Design

Page 29

Goal: Design a power amplifier using X-parameter measurements of a

transistor.

X-parameter model measuredof a Cree CGH40045F GaN

transistor using NVNA.

Desired Design Goals:

Frequency = 1.2 GHz

Output power > 45 dBm

PAE > 60%

Class AB

Linearity and other performance parameters

were not part of this first phase design.

Note: Cree transistor is capable of higher

performance than Desired Design

Specifications. Refer to Cree datasheet

for more information.


30/47

Power Amplifier Design

Total PA design completed in ADS:

1. Simulated impedance contours of output power and PAE at

fundamental and harmonic frequencies at input (gate) and output

ports (drain)

2. Simulated impedance contours used to determine appropriate

termination impedances at fundamental and harmonic frequencies atinput (gate) and output ports (drain) to maximize PAE and output

power

3. PCB designed with appropriate matching from (2)

4. Final PA assembled and compared against simulation

Page 30


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CR3

AR1

NVNA

-18 dBm (ET)

Port 1

Port 2

Tuner

Tuner

DUTCree CGH40045F GaN HEMT

F = 1.2 GHzGain ~ 12-16 dB

Pout ~ 46 dBm

+10 dBm to +32 dBm

+46 dBm (max)

+26 dBm (ET)

10 dB

(< 1 W)

2x20 dB

(< 1 W)

40 dB(10 W)

2x20 dB

(< 1 W)

10 dB (100 Watt)

-20 dBm-20 dBm

+36 dBm

+36 dBm

AR 5S1G4G = 30 dB at lowest gain

Pmax = +37 dBm (5 Watts)

Frequency = .8 4.2 GHz

Couplers - minicircuitsZGDC10-362HP+

CF ~ -10 dB

Pmax >+ 53 dBm

+12 dBm (ET) at +32

dBm input

-20 dBm-20 dBm

Bias

-18 dBm to +2 dBm (DT)

1 dBm (ET) at G=35 dB

30 dB

Bias

20 dB

AR 60S1G4

G = max 38 dB min 33 dB at 0%Pmax = +48 dBm (60 Watts)

Frequency = .8 4.2 GHz

Couplers - minicircuits

ZGDC10-362HP+CF ~ -10 dB

Pmax >+ 53 dBm

NVNA X-parameter System Power Budget (120 W)

Page 31


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High Power X-parameter Measurement System

Page 32

M d l V ifi ti


33/47

Model Verification

Verification of the measured X-parameter model:

1. Make measurements of component (transistor). These are not X-

parameter measurements but instead measurements of other

parameters like A and B waves, output power, PAE or another

parameter of your choice.

2. Record the input power, impedances (input and output ports,

fundamental and harmonic) and bias used during the

measurements in (1).

3. Place these impedances in the simulator as terminations of the X-

parameter model and sweep power over that used in measurement

range.

Note: Extrapolation boundaries is a topic for

another day

Page 33


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X-parameter Model Verification - Circuit Template

Page 34


35/47

X-parameter Model Verification - Results

22 24 26 2820 30

40

42

44

38

46

0.7

2.0

Incident Power (dBm)

DeliveredP

ower(dBm) D

rainCur

rent(Amps)

Verification of X-parameter Model

Measured

Simulated

Page 35


36/47

PAE_

contours

E

Power_con

tours

P

Elevel=70.711610, number=65

Plevel=46.029871, number=52

46.05

Maximum Powerand contourlevels, dBm:

46.0045.5045.0044.5044.0043.50

43.0042.50

70.812

Maximum PAEand contourlevels, %:

68.00064.00060.00056.00052.00048.00044.00040.000

Simulated Fundamental Pout and PAE Contours

PAE > 70 %

Output Power > 45dBm

All other impedances in the

simulator set to 50 ohm

except fundamental input

impedance (~2 ohm).

Page 36


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21.0

22.0

23.0

24.0

25.0

26.0

27.0

28.0

29.0

20.0

30.0

RFpower[0,::]

m3

RF Power SelectorTransducerPower Gain

1.200 GHz

FundamentalFrequency

20.00021.00022.00023.000

24.00025.00026.00027.00028.00029.00030.000

38.91639.82640.71741.596

42.46043.31844.12244.77545.18045.47245.696

18.91618.82618.71718.596

18.46018.31818.12217.77517.18016.47215.696

37.95342.01946.46551.376

56.10861.76767.22671.32272.65973.30874.317

20.28122.58325.06927.747

30.98434.28337.87741.45344.57947.12448.783

0.7240.8070.8950.991

1.1071.2251.3531.4811.5921.6831.743

12.54713.04713.36113.415

13.50012.97712.24211.65311.86512.14211.988

FundamentalOutput Power dBm

AvailableSource Power dBm

39 40 41 42 43 44 4538 46

16

17

18

15

19

Fund. Output Power, dBm

m2

m1Transducer Power Gain, d B

20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0 28.5 29.0 29.520.0 30.0

15

20

25

30

35

40

45

10

50

RFpower

Spectrum[1]

Spectrum[3]

Spectrum[2]

Fundamental and Third Harm., dBm

3.220

45.70

Gain Compressionbetween markers, dB

Output Powerat Marker m2, dBm

Power- AddedEfficiency, %

39 40 41 42 43 44 4538 46

40

50

60

70

30

80


PAE, %

39 40 41 42 43 44 4538 46

0.8

1.01.2

1.4

1.6

0.6

1.8


High Suppl y Current

HighSupplyCurrent

ThermalDissipationWatts

DC PowerConsumpt.Watts

500.M

1.00G

1.50G

2.00G

2.50G

3.00G

3.50G

0.000

4.00G

-100

-50

0

-150

50

Output Spectrum, dBm

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.0 1.8

-30

-20

-10

0

10

20

30

-40

40

time, nsec

ts(Vinput

),V

ts(Vload),V

Input and Output Voltage Waveforms

Simulated ParametersADS Amplifier DesignGuide

Page 37


38/47

Final Power Amplifier

PAE could be improved based on a

better physical termination impedanceat the 2nd harmonic at the input in the

next design. However, there is a

tradeoff between the bandwidth of the

impedance and PAE (i.e. PAE could be

very peaky over a very narrow

frequency bandwidth)

Page 38

Courtesy of University of Waterloo


39/47

X-parameter Measurements Rules-of-Thumb

Leave enough pre-amplifier linear gain for extraction and drive tones

If the pre-amplifier is saturated with the drive signal then adding the extractionsignal will degrade X-parameters. Generally seen during a power sweep where

there is divergence between simulated and measured results at the higher end of

the power sweep (watch receiver compression though).

Simulation termination impedance

When comparing simulated as and bs from X-parameters against measured asand bs it is critical that the terminations in the simulation match that used during

measurement. Ensure proper calibration and de-embedding techniques where

applicable.

Calibration procedure using 8 term error model, tuners and pre-amplifiers

Often pre-amplifiers are removed behind the couplers during calibration and thenplaced back in-line after the calibration procedure is complete. This may effect the

tuner characterization and therefore the source and load impedances behind the

tuners should be determined from the NVNA and accounted for to ensure proper

applied impedance to the component by the tuners.

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N li V N k A l (NVNA)


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Nonlinear Vector Network Analyzer (NVNA)

Page 40

Vector (amplitude/phase) corrected nonlinear

measurements from 10 MHz to 13.5, 26.5 43.5 50 GHz

Calibrated absolute amplitude and relative phase (cross-

frequency relative phase) of measured spectra traceable tostandards lab

Up to 50 GHz of vector corrected bandwidth for time

domain waveforms of voltages and currents of DUT

Multi-Envelope domain measurements for measurement

and analysis of memory effects

X-parameters: Extension of Scattering parameters into the

nonlinear region providing unique insight into nonlinear DUT

behavior

X-parameter extraction into ADS nonlinear simulation and

design

NVNA can control external DC instruments (sweep and

sense) during RF measurements

Standard PNA-X with New Nonlinear features and

capabilityNew phase calibration standard

NVNA FW

X P t T h l


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X-Parameter Technology

in Agilent EEsof EDAs Platforms

Page 41

ADS X P t G t


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ADS X-Parameter Generator

Available in ADS 2009 Update 1

Generate nonlinear X-parameter

models in ADS

Augments Agilents measurement-based

X-parameter generation (PNA-X Series

Nonlinear Vector Network Analyzer)

Easy to setup and run

Multi-tone

Multi-port: No limits on the number of ports, frequency or power

Models amplifiers, mixers, and transceivers with frequency conversion

Page 42

X t t h l i di idl


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X-parameter technology is expanding rapidly

Agilent breakthroughs:

Load-dependent X-parameters 50 GHz Agilent NVNA

High-Power X-parameter measurements

X-parameter generator in ADS

Simulation of XnP component in ADS,Genesys & SystemVue

Two-tone measured X-parameters

Three-port measured X-parameters

Memory: Dynamic X-parameters

Education, training, app. Notes

Page 43

Q ti ?


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Questions?

Page 44

Design and simulate with

measured or generated X-parameters in ADS

Measure X-parameters withAgilents NVNA

Design with measured

X-parameters in ADS

F M I f ti


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For More Information

Page 45

X-parameters

www.agilent.com/find/x-parameters

Nonlinear Vector Network Analyzer

www.agilent.com/find/nvna

ADS MMIC design seminar (click on X-parameters link)

www.agilent.com/find/eesof-mmic-seminar

X-Parameters Aid MMIC Design

http://www.mwrf.com/Articles/Index.cfm?Ad=1&ArticleID

=22811

X-Parameter YouTube Videos

http://www.youtube.com/user/AgilentEEsof

Trademark Usage, Open Documentation & Partnerships

http://www.agilent.com/find/x-parameters-info

Selected References and Links
http://www.agilent.com/find/x-parametershttp://www.agilent.com/find/nvnahttp://www.agilent.com/find/eesof-mmic-seminarhttp://www.mwrf.com/Articles/Index.cfm?Ad=1&ArticleID=22811http://www.mwrf.com/Articles/Index.cfm?Ad=1&ArticleID=22811http://www.youtube.com/user/AgilentEEsofhttp://www.agilent.com/find/eesof-x-parameters-infohttp://www.agilent.com/find/eesof-x-parameters-infohttp://www.agilent.com/find/eesof-x-parameters-infohttp://www.youtube.com/user/AgilentEEsofhttp://www.mwrf.com/Articles/Index.cfm?Ad=1&ArticleID=22811http://www.mwrf.com/Articles/Index.cfm?Ad=1&ArticleID=22811http://www.agilent.com/find/eesof-mmic-seminarhttp://www.agilent.com/find/nvnahttp://www.agilent.com/find/x-parameters


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Selected References and Links1. D. E. Root, J. Horn, L. Betts, C. Gillease, J. Verspecht, X-parameters: The new paradigm for measurement, modeling, and design

of nonlinear RF and microwave components, Microwave Engineering Europe, December 2008 pp 16-21.

http://www.nxtbook.com/nxtbooks/cmp/mwee1208/#/16

2. D. E. Root, X-parameters: Commercial implementations of the latest technology enable mainstream applications Microwave

Journal, Sept. 2009, http://www.mwjournal.com/search/ExpertAdvice.asp?HH_ID=RES_200&SearchWord=root

3. J. Verspecht and D. E. Root, Poly-Harmonic Distortion Modeling, in IEEE Microwave Theory and Techniques Microwave

Magazine, June, 2006.4. D . E. Root, J. Verspecht, D. Sharrit, J. Wood, and A. Cognata, Broad-Band, Poly-Harmonic Distortion (PHD) Behavioral Models

from Fast Automated Simulations and Large-Signal Vectorial Network Measurements, IEEE Transactions on Microwave Theory

and Techniques Vol. 53. No. 11, November, 2005 pp. 3656-3664

5. J. Verspecht, J. Horn, L. Betts, D. Gunyan, R. Pollard, C. Gillease, D. E. Root, Extension of X-parameters to include long-term

dynamic memory effects, IEEE MTT-S International Microwave Symposium Digest, 2009. pp 741-744, June, 2009

6. J. Verspecht, J. Horn, D. E. Root A Simplified Extension of X-parameters to Describe Memory Effects for Wideband Modulated

Signals, Proceedings of the 75th IEEE MTT-S ARFTG Conference, May, 2010

7. J. Xu, J. Horn, M. Iwamoto, D. E. Root, Large-signal FET Model with Multiple Time Scale Dynamics from Nonlinear Vector

Network Analyzer Data, IEEE MTT-S International Microwave Symposium Digest, May, 2010.

8. J. Horn, S. Woodington, R. Saini, J. Benedikt, P. J. Tasker, and D. E. Root; Harmonic Load-Tuning Predictions from X-

parameters, IEEE PA Symposium, San Diego, Sept. 2009

9. D. Gunyan , J. Horn, J. Xu, and D. E. Root, Nonlinear Validation of Arbitrary Load X-parameter and Measurement-Based Device

Models, IEEE MTT-S ARFTG Conference, Boston, MA, June 200910. G. Simpson, J. Horn, D. Gunyan, and D. E. Root, Load-Pull + NVNA = Enhanced X-Parameters for PA Designs with High

Mismatch and Technology-Independent Large-Signal Device Models, IEEE ARFTG Conference, Portland, OR December 2008.

11. J. Horn, J. Verspecht, D. Gunyan, L. Betts, D. E. Root, and J. Eriksson, X-Parameter Measurement and Simulation of a GSM

Handset Amplifier, 2008 European Microwave Conference DigestAmsterdam, October, 2008

12. J. Verspecht, D. Gunyan, J. Horn, J. Xu, A. Cognata, and D.E. Root, Multi-tone, Multi-Port, and Dynamic Memory Enhancements

to PHD Nonlinear Behavioral Models from Large-Signal Measurements and Simulations, 2007 IEEE MTT-S Int. Microwave

Symposium Digest, Honolulu, HI, USA, June 2007.

13. D. E. Root, J. Xu, J. Horn, M. Iwamoto, and G. Simpson, Device Modeling with NVNAs and X-parameters, 2010 IEEE MTT-S

INMMiC Conference, Gtenborg, Sweden, April 26, 2010

14. J. Horn, G. Simpson, D. E. Root, GaN Device Modeling with X-parameters,Accepted for publication 2010IEEE CSICS, Oct. 2010

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Th k Y t S ti P t
http://www.nxtbook.com/nxtbooks/cmp/mwee1208/http://www.mwjournal.com/search/ExpertAdvice.asp?HH_ID=RES_200&SearchWord=roothttp://www.mwjournal.com/search/ExpertAdvice.asp?HH_ID=RES_200&SearchWord=roothttp://www.nxtbook.com/nxtbooks/cmp/mwee1208/


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Thank You to Supporting Partners

AR RF/Microwave Instrumentation

Cree

Focus Microwaves

Maury Microwave

Mini-Circuits

University of Waterloo

X Parameter Webcast 2011 Final

Documents

Transcript of X Parameter Webcast 2011 Final