WG3 – STRIP R&D ITS - COMSATS 02.5.2011 P. Riedler, G. Contin, A. Rivetti – WG3 conveners.

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WG3 – STRIP R&D ITS - COMSATS 02.5.2011 P. Riedler, G. Contin, A. Rivetti – WG3 conveners

description

Aims of the strip upgrade 3  Cover a large area on the outer (2-4) ITSupgrade layers B. 2 layers (present SDD)~ 1.3 m 2 C. 4 layers (present SDD &SSD) ~ ( ) m 2  Manage higher multiplicity w/ low occupancy even at small radius (15 cm) to replace SDD  Provide tracking information w/ good resolution Spatial resolution: at least 20  m (r  ), 800  m (z) as the present SSD Connect tracks to TPC  Provide dE/dx for an improved PID over a dynamic range 0-15 Mips (for light nuclei & low mom. part.) with 0.1 Mip resolution (to separate different particle types) Strip R&D

Transcript of WG3 – STRIP R&D ITS - COMSATS 02.5.2011 P. Riedler, G. Contin, A. Rivetti – WG3 conveners.

Page 1: WG3 – STRIP R&D ITS - COMSATS 02.5.2011 P. Riedler, G. Contin, A. Rivetti – WG3 conveners.

WG3 – STRIP R&D ITS - COMSATS 02.5.2011P. Riedler, G. Contin, A. Rivetti – WG3 conveners

Page 2: WG3 – STRIP R&D ITS - COMSATS 02.5.2011 P. Riedler, G. Contin, A. Rivetti – WG3 conveners.

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Outline Aims of the strip upgrade The present ALICE strip detector (SSD) Proposal for a new sensor design Ideas for the detector layout Micro-cables for interconnections ASIC specifications and development Plans for assembly tests

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Aims of the strip upgrade Cover a large area on the outer (2-4) ITSupgrade layers

B. 2 layers (present SDD) ~ 1.3 m2

C. 4 layers (present SDD &SSD) ~ (1.3 + 5) m2

Manage higher multiplicity w/ low occupancy even at small radius (15 cm) to replace SDD

Provide tracking information w/ good resolution Spatial resolution: at least 20 mm (r), 800 mm (z) as the present

SSD Connect tracks to TPC

Provide dE/dx for an improved PID over a dynamic range 0-15 Mips (for light nuclei & low mom.

part.) with 0.1 Mip resolution (to separate different particle types)

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The present ALICE strip detector: SSD

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R&D for the ALICE strip upgrade Start from the present strip technology which

is optimized for the present experimental conditions

Improve the strip system to meet the new ITS upgrade requirements (occupancy, data-format, acquisition rate, time resolution, extended PID, ...)

Benefit from the past experience to get better reliability and uniformity of components

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The new strip sensor layout is being designed (Trieste group) decrease the strip length from ~40mm to 20mm cell size ~ -50% Cstrip ~ -50% 2 x # of channels same cluster size

2 rows of strips per sensor side

Strip sensor layout

draft

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Strip mcables design proposals

Double no. of channels requires a new Al-polymide mcable design

draft

draft

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Interconnection layouts & options TAB bonding technique (allows chip tests, less

material, safe folding)

Wire bonding (easier alignment)

draft

draft

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Strip interconnections: m-cables Discussion about specs with the Kharkov Group

Present SSD min trace pitch: 80 mm Past experience with prototypes:

46 mm min. trace pitch 56 mm min. trace pitch

Possible development of mcables with pitch ~ 50 um bonding and alignment becomes challenging needs to develop:

new assembling technology sensor/ASIC/cables mock-ups for tests new hybrid (cable+chip) design

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Plans for assembly tests

Next steps: Design the mask for a dummy strip sensor Define the specifications for micro-cable

prototypes Evaluate different bonding techniques Plan the production of the first dummy

components by the summer of 2011

Organize an assembly and bonding test with dummy components

by the end of 2011

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ASIC development

ASIC specs HAL25 (Present SSD)

Upgrade target

CMOS technology 0.25 µm 0.13 µm (?)Input pitch 80 µm ~44 µm

On 2 staggered rows (?)ASIC size 3.65 x 11.90 mm2 5-6 x 6 mm2 (?)Dynamic range 1MeV

~290000 e-≿1.3MeV (15 Mip)~360000 e-

Charge resolution ~1 keV~290 e-

~1 keV (0.1 Mip)~290 e-

Noise (ENC for 5 pF load cap.)

< 300 e- < 300 e-

Investigating for available solutions for strip ASIC front-end chip: contacts with UK and CERN Groups

Specification definition in progress:

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ASIC specifications

ASIC specs HAL25 (Present SSD)

Upgrade target

Peaking time 1.4 – 2.2 µs ≤1 µsReadout & Format Serial, analogue Digital (?)ADC Off-detector On chip (?)Common Mode correction Off-detector On chip (?)Power dissipation[µW]

<1ms> : 265 - 360Readout: 680 - 759Acquisition: 290 – 355

Better than present

# channels per chip 128 128Total # of channels 2.6 M ~1 – 5 M (?)Expected Dose/Hadron Fluence (10 years)

// 30 kRad (TID)6*1011 cm -2 (hadron fluence in 1MeV n)

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Summary

The aims of the strip upgrade are well defined

Clear ideas for the detector layout Strip sensor design in progress Different proposals for interconnections Front-end ASIC:

specs definition ongoing looking for partners to develop the chip

Test w/ dummy components to evaluate the assembly feasibility is planned