Weekly Report
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Transcript of Weekly Report
Weekly Report
Renjie ChenSupervisor: Shadi A. Dayeh
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Summary
• In the past week, I was working on the project of high-density neural probes.
• There were some problems in the fabrication process, related to the nickel silicide bonding and Si RIE/ICP etching.
• My target was to: (1) modify the nickel silicide bonding conditions
(2) test new metal stacking layers
(3) push new samples ready for neural culture/measurement
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Processing Flow
* Process designed by Prof. Shadi and Dr. Yoontae, and figures adapted from Dr. Yoontae’s presentation
Problems to solve
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NiSix Bonding Modification
Possible Solutions
1st Problem:
Possible Reason
Ti/Ni/Ti/Ni = 30/350/30/50 nmStep height = 870 nm
Ti/Pd/Ti/Ni = 30/60/30/400 nmStep height = 640 nm
Ti/Ni/Ti/Ni = 30/50/30/350 Ti/Ni/Ti/Ni = 30/50/30/350 Step height = 570 nm
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Nickel silicide Ni tape
Possible Reason
Possible Solutions • Shorten the Bonding time or lower the bonding temperature to have
sufficient Ni remained.
• Try multiple Metal layer stacking.Previous metal stacking: Ti/Pd/Ti/Ni = 30nm/60nm/30nm/400nmNew metal stacking: Ti/Pd/Ti/Ni/Ti/Ni =
30nm/60nm/30nm/200nm/30nm/200nm
2nd Problem:
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Edge
Ti/Pd/Ti/Ni = 30nm/60nm/30nm/400nm
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Ti/Pd/Ti/Ni/Ti/Ni = 30nm/60nm/30nm/200nm/30nm/200nm
Edge
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Metal Stacking
Ti/Pd/Ti/Ni/Ti/Ni = 30nm/200nm/50nm/50nm
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Plan
1. Samples send back to UCSD for thinning/pillar etching7 Samples with old metal stacking (Ti/Pd/Ti/Ni) finished
-- 5 samples bonded with 90um Si, for Si thinning -> send back-- 2 samples bonded with 10um Si, for pillar etching -> directly use for
device9 Samples with new metal stacking (Ti/Pd/Ti/Ni/Ti/Ni) in preparation
-- 7 samples to be bonded with 90um Si, for Si thinning -> send back-- 2 samples to be bonded with 10um Si, for pillar etching -> directly use
for device
2. During waiting for samples coming back-- work on Ni-InGaAs project-- Cory’s EBL sample, may take some time to calibrate the off-set-- Farid’s Photomask has finished, will be mailed together with my samples