web.ece.ucsb.edu · Web view1. 1984 L.S. Smoot and M.J.W. Rodwell, "Optical Receivers at 12 and 45...

MARK RODWELL

# YEAR TITLE and AUTHORS PUBLISHER CATEGORY

Please scroll down to see current linked publications 1. 1984 L.S. Smoot and M.J.W. Rodwell, "Optical

Receivers at 12 and 45 Mbit/sec with Automatic Gain Control.”

Conference on Optical Fiber Communication, Technical Digest, p.32, New Orleans, LA, January.

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2. 1985 K.J. Weingarten, M.J.W. Rodwell, H.K. Heinrich, B.H. Kolner, and D.M. Bloom, "Direct Electro-Optic Sampling of GaAs Integrated Circuits.”

Elect. Lett., Vol. 21, No. 17, pp. 765-766, August 15.

Journal Paper

3. 1985 B.H. Kolner, K.J. Weingarten, M.J.W. Rodwell, and D.M. Bloom, "Electro-optic Sampling and Harmonic Mixing in GaAs."

Presented at the Topical Meeting on Picosecond Electronics and Optoelectronics, Incline Village, NV, March 13-15. Proceedings Published as Picosecond Electronics and Optoelectronics, G.A. Mourou, D.M. Bloom, and C.H. Lee, eds., Springer-Verlag, New York.

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4. 1985 J.L. Freeman, K.J. Weingarten, M.J.W. Rodwell, S.K. Diamond, H. Fong, and D.M. Bloom, "Direct Electro-optic Sampling of Analog and Digital GaAs Integrated Circuits.”

GaAs IC Symposium, Technical Digest, pp. 147-150, November.

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5. 1985 K.J. Weingarten, M.J.W. Rodwell, J.L. Freeman, S.K. Diamond, and D.M. Bloom, "Characterization of GaAs Integrated Circuits by Direct Electrooptic Sampling."

International Electron Devices Meeting, Technical Digest, pp. 479-482, Washington, DC, December 4.

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6. 1986 M.J.W. Rodwell, M. Riaziat, K.J. Weingarten, B.A. Auld, and D.M. Bloom, "Internal Microwave Propagation and Distortion Characteristics of Travelling-Wave Amplifiers Studied by Electro-Optic Sampling."

1986 IEEE Symposium on Microwave Theory & Techniques, Technical Digest, pp. 333-336.

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7. 1986 M.J.W. Rodwell, K.J. Weingarten, J.L. Freeman, and D.M. Bloom, "Gate Propagation Delay and Logic Timing of GaAs Integrated Circuits Measured by Electro-Optic Sampling.”

Electronic Letters, Vol. 22, No. 9, pp. 499-501, April 24.

Journal Paper

8. 1986 M.J.W. Rodwell, K.J. Weingarten, D.M. Bloom, T. Baer, and B.H. Kolner, "Reduction in the Timing Fluctuations in a Mode-Locked Nd:YAG Laser by Electronic Feedback.”

Opt. Lett., Vol. 11, pp. 638-640, October.

Journal Paper

9. 1986 M.J.W. Rodwell, M. Riaziat, K.J. Weingarten, B.A. Auld, and D.M. Bloom, "Internal Microwave Propagation and Distortion Characteristics of Travelling-

IEEE Trans. Microwave Theory & Tech., Vol. MTT-34, No. 12, pp. 1356-1361, December.

Journal Paper

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Wave Amplifiers Studied by Electro-Optic Sampling.”

10. 1986 K.J. Weingarten, M.J.W. Rodwell, J.L. Freeman, S.K. Diamond, and D.M. Bloom, "Electro-optic Sampling of GaAs Integrated Circuits.”

Presented at the Topical Meeting on Ultrafast Phenomena, Snowmass, CO, June 16-19. Proceedings Published in Ultrafast Phenomena V, G.R. Fleming and A.E. Siegman, eds., Springer-Verlag, New York.

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11. 1987 M.J.W. Rodwell, D.M. Bloom, and B.A. Auld, "Nonlinear Transmission-Line for Picosecond Pulse Compression and Broadband Phase Modulation.”

Elect. Lett., 23, p.109, January 29.

Journal Paper

12. 1987 K.J.Weingarten, M.J.W. Rodwell, and D.M. Bloom, "Picosecond Sampling of GaAs Integrated Circuits."

Invited Presentation to the Topical Meeting on Picosecond Electronics and Optoelectronics, Incline Village, NV, January 14-16. Proceedings Published as Picosecond Electronics and Optoelectronics II, F.J. Leonberger, C.H. Lee, F. Capasso, and H. Morkoc, eds., Springer-Verlag, New York.

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13. 1987 K.J. Weingarten, R. Majidi-Ahy, M.J.W. Rodwell, B.A. Auld, and D. M. Bloom, "Microwave Measurements of GaAs Integrated Circuits Using Electro-Optic Sampling.”

Invited paper to the 1987 IEEE Microwave Theory & Techniques Symposium, June.

Conference Paper

14. 1988 M.J.W. Rodwell, C.J. Madden, B.T. Khuri-Yakub, D.M. Bloom, Y.C. Pao, N.S. Gabriel, and S.P. Swierkowski, "Generation of 7.8 ps Electrical Transients on a Monolithic Nonlinear Transmission Line.”

Elect. Lett., Vol. 24, No. 2, p. 100, January 21.

Journal Paper

15. 1988 K.J. Weingarten, M.J.W. Rodwell, and D.M. Bloom, "Picosecond Sampling of GaAs Integrated Circuits.”

IEEE Journal of Quantum Electronics, Vol. 24, No. 2, pp. 198-220, February. (Invited Paper)

Journal Paper

16. 1988 M.J.W. Rodwell, K.J. Weingarten, and D.M. Bloom, "Subpicosecond Laser Timing Stabilization.”

Conference on Lasers and Electro-Optics, Anaheim, CA, April 25-29.

Conference Paper

17. 1988 M. J.W. Rodwell, C.J. Madden, B.T. Khuri-Yakub, D.M. Bloom, Y.C. Pao, N.S. Gabriel, and S.P. Swierkowsk, “Generation of 7.8 ps Electrical Transients on a Monolithic Nonlinear Transmission Line.”

Conference on Lasers and Electro-Optics, Anaheim, CA, April 25-29.

Conference Paper

18. 1988 C.J. Madden, M.J.W. Rodwell, R.A. Marsland, D.M. Bloom, and Y.C. Pao,

Device Research Conference, Boulder, CO, June 20-22.

Conference Paper

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"Picosecond Shock-Wave Generation on a Monolithic Nonlinear Transmission Line.”

19. 1988 C.J. Madden, M.J.W. Rodwell, R.A. Marsland, Y.C. Pao, and D.M. Bloom, "Generation of 3.5 ps Falltime Shock-waves on a Monolithic GaAs Nonlinear Transmission Line.”

IEEE Electron Device Letters, Vol. 9, No. 6, pp. 303-305, June.

Journal Paper

20. 1988 R.A. Marsland, V. Valdivia, C.J. Madden, M.J.W. Rodwell, and D.M. Bloom, "100 GHz GaAs MMIC Sampling Head.”

1988 International Electron Device Meeting, San Francisco, CA, Technical Digest, pp. 897-899, December 11-14.

Conference Paper

21. 1990 K.J. Weingarten, M.J.W. Rodwell, and D.M. Bloom, "Picosecond Optical Characterization of GaAs Integrated Circuits.”

Gallium Arsenide Technology, Volume II, David K. Ferry, ed., Howard Sams & Co.

Book Chapter

22. 1989 S.K. Diamond, E. Özbay, M.J.W. Rodwell, D.M. Bloom, Y.C. Pao, and J.S. Harris, "Resonant Tunneling Diodes for Switching Applications.”

Applied Physics Letters, 54 (2), pp. 153-155, January 9.

Journal Paper

23. 1989 R.A. Marsland, C.J. Madden, V. Valdivia, M.J.W. Rodwell, and D.M. Bloom, "Picosecond Pulse Generation and Sampling with GaAs Monolithic Integrated Circuits.”

Presentation to the Picosecond Electronics and Optoelectronics Conference, Salt Lake City, UT, March 8-10. (Invited Paper)

Conference Paper

24. 1989 S.K. Diamond, E. Özbay, M.J.W. Rodwell, D.M. Bloom, Y.C. Pao, E. Wolak, and J.S. Harris, "Fabrication of Resonant Tunneling Diodes for Switching Applications."

Picosecond Electronics and Optoelectronics Conference, Salt Lake City, UT, March 8-10.

Conference Paper

25. 1989 C.J. Madden, R.A. Marsland, M.J.W. Rodwell, D.M. Bloom, and Y.C. Pao, "Hyperabrupt-doped GaAs Nonlinear Transmission Line for Picosecond Shock-wave Generation."

Applied Physics Letters, 54 (11), pp. 1019-1021, March 13.

Journal Paper

26. 1989 S.K. Diamond, E. Özbay, M.J.W. Rodwell, D.M. Bloom, Y.C. Pao, E. Wolak, and J.S. Harris, "Fabrication of 200 GHz Fmax Resonant Tunneling Diodes for Integrated Circuit and Microwave Applications."

IEEE Electron Device Letters, Vol. 10, No. 3, pp. 104-106, March.

Journal Paper

27. 1989 U. Keller, K.D. Li, M.J.W. Rodwell, and D.M. Bloom, "Noise Characterization of Femtosecond Fiber Raman Soliton Lasers."

IEEE Journal of Quantum Electronics, Vol. 25, No. 3, pp. 280-288, March.

Journal Paper

28. 1989 M.J.W. Rodwell, D.M. Bloom, and K.J. Weingarten, "Subpicosecond Laser Timing Stabilization." Publication

IEEE Journal of Quantum Electronics, Vol. 25, No. 4, pp. 817-827, April.

Journal Paper

29. 1989 J.E. Bowers, D.J. Derickson, A. Mar, P.A. Seventh International Conference Paper10

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Morton, and M.J.W. Rodwell, "Phase Noise in Actively Mode Locked Semiconductor Lasers."

Conference on Integrated Optics and Optical Fiber Communication, Kobe, Japan, July 18-21.

30. 1989 R.A. Marsland, V. Valdivia, C.J. Madden, M.J.W. Rodwell, and D.M. Bloom, "130 GHz GaAs Monolithic Integrated Circuit Sampling Head."

Applied Physics Letters, 55(6), August 7.

Journal Paper

31. 1990 C.J. Madden, R.A. Marsland, D.M. Bloom, and M.J.W. Rodwell, "Picosecond Pulse Generation Circuits using a GaAs Nonlinear Transmission Line."

Presented at the Topical Meeting on Ultrafast Phenomena, Monterey, CA, May 14-17.

Conference Paper

32. 1990 M. Case, R.Y. Yu, M. Kamegawa, M. Sundaram, M.J.W. Rodwell, and A.C. Gosssard, "Accurate 225 GHz Sampling Circuit Implemented in a 3-Mask Process."

Device Research Conference, Santa Barbara, CA, June 25-27.

Conference Paper

33. 1990 M. Case, M. Kamegawa, R.Y. Yu, K. Giboney, M.J.W. Rodwell, J. Bowers and J. Franklin, "62.5 ps to 5.5 ps Soliton Compression on a Monolithic Nonlinear Transmission Line."

1990 Device Research Conference, Santa Barbara, CA, June 25-27.

Conference Paper

34. 1990 M.J.W. Rodwell, J.F. Jensen, W.E. Stanchina, R.A Metzger, D.B. Rensch, M.W. Pierce, T.V. Kargodorian, and Y.K. Allen, "33 GHz Monolithic Cascode InGaAs/InAlAs Heterojunction Bipolar Transistor Feedback Amplifier."

Presented at the 1990 IEEE Bipolar Circuits and Technology Meeting, Minneapolis, MN, Sept. 17-18.

Conference Paper

35. 1990 R.Y. Yu, M. Case, M. Kamegawa, M. Sundaram, M.J.W. Rodwell, and A. Gossard, "275 GHz 3-Mask Integrated GaAs Sampling Circuit."

Electronics Letters, Vol. 26, No. 13, pp. 949-951, June 21.

Journal Paper

36. 1991 M. Case, M. Kamegawa, R.Y. Yu, M.J.W. Rodwell, and J. Franklin, "Impulse Compression Using Soliton Effects in a Monolithic GaAs Circuit."

Applied Physics Letters, Vol. 58, No. 2, pp. 173-175, January 14.

Journal Paper

37. 1991 E. Carman, K. Giboney, M. Case, M. Kamegawa, R. Yu, K. Abe, M.J.W. Rodwell, and J. Franklin, "28-39 GHz Distributed Harmonic Generation on a Soliton Nonlinear Transmission Line."

IEEE Microwave and Guided-Wave Letters, Vol. 1, No. 2, pp. 28-31, February.

Journal Paper

38. 1991 M. Case, E. Carman, M. Kamegawa, K. Giboney, R. Yu, K. Abe, M.J.W. Rodwell, and J. Franklin, "Impulse Generation and Frequency Multiplication Using Soliton Effects in Monolithic GaAs Circuits."

Presented at the OSA Topical Meeting on Picosecond Electronics and Optoelectronics, March 13-15, Salt Lake City, UT.

Conference Paper

39. 1991 M. Rodwell, M. Kamegawa, R. Yu, M. Case, E. Carman, and K. Giboney, "GaAs Nonlinear Transmission Lines for Picosecond Pulse Generation and Millimeter-

IEEE Transactions on Microwave Theory and Techniques, Vol. 39, No. 7, pp. 1194-1204, July.

Journal Paper

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Wave Sampling." Publication

40. 1991 Y.G. Wey, K. Giboney, D.L. Crawford, J.E. Bowers, M.J.W. Rodwell, P. Silvestre, M.J. Hafich, and G.Y. Robinson, "Ultrafast Graded Double Heterostructure p-i-n Photodiode."

OSA Topical Meeting on Picosecond Electronics and Optoelectronics, Salt Lake City, UT, March 13-15.

Conference Paper

41. 1991 Y.G. Wey, M. Kamegawa, A. Mar, K.J. Williams, K. Giboney, D.L. Crawford, J.E. Bowers, and M.J.W. Rodwell, "Hybrid Integration of an InGaAs/InP Photodiode with an Ultrafast Sampling Circuit."

Postdeadline paper at the 1991 IEEE/OSA conference on Optical Fiber Communication, San Diego, CA, Feb. 19-22.

Conference Paper

42. 1991 Y.G. Wey, D.L. Crawford, K. Giboney, J.E. Bowers, M.J.W. Rodwell, P. Silvestre, M.J. Hafich, and G.Y. Robinson, "Ultrafast Graded Double Heterostructure GaInAs/InP Photodiode."

Applied Physics Letters, Vol. 58, No. 19, pp. 2156-2158, May 13.

Journal Paper

43. 1991 M. Kamegawa, K. Giboney, J. Karin, M.Case, R. Yu, M.J.W. Rodwell, and J.E. Bowers, "Picosecond GaAs Monolithic Optoelectronic Sampling Circuit."

IEEE Photonics Technology Letters, Vol. 3, No. 6, pp. 567-569, June.

Journal Paper

44. 1991 M. Kamegawa, K. Giboney, J. Karin, M.Case, R. Yu, M.J.W. Rodwell, and J.E. Bowers, "Picosecond GaAs Photodetector Monolithically Integrated with a High Speed Sampling Circuit."

1991 IEEE/OSA Topical Meeting on Picosecond Electronics and Optoelectronics, Salt Lake City, UT, March 13-15.

Conference Paper

45. 1991 M. Rodwell, M. Kamegawa, M. Case, R. Yu, K. Giboney, E. Carman, J. Karin, S. Allen, and J. Franklin, "Nonlinear Transmission Lines and their Applications in Picosecond Optoelectronic and Electronic Measurements."

1991 Engineering Foundation Conference on High Frequency/ High Speed Optoelectronics, Palm Beach, FL, March 18-22.

Conference Paper

46. 1991 M. Kamegawa, Y. Konishi, M. Case, R. Yu, and M. Rodwell, "Coherent Broadband Millimeter-Wave Spectroscopy Using Monolithic GaAs Circuits."

Presented at the 1991 LEOS Summer Topical Meeting on Optical Millimeter-Wave Interactions, Newport Beach, CA, July 24-26.

Conference Paper

47. 1991 R. Yu, M. Kamegawa, M. Case, M.J.W. Rodwell, and J. Franklin, "A <2.5 ps Time-Domain Reflectometer for MM-Wave Network Analysis."

Presented at the 1991 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Cornell, NY, August.

Conference Paper

48. 1991 R. Yu, M. Kamegawa, M. Case, M. Rodwell, and J. Franklin, "A 2.3 ps Time-Domain Reflectometer for Millimeter-Wave Network Analysis."

IEEE Microwave and Guided-Wave Letters, Vol. 1, No. 11, pp. 334-336, November.

Journal Paper

49. 1991 M.J.W. Rodwell, J. F. Jensen, W.E. IEEE Journal of Solid-State Journal Paper12

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Stanchina, R.A Metzger, D.B. Rensch, M.W. Pierce, T.V. Kargodorian, and Y.K. Allen, "33 GHz Monolithic Cascode AlInAs/GaInAs Heterojunction Bipolar Transistor Feedback Amplifier."

Circuits, Vol. 26, No. 10, pp. 1378-1382, October.

50. 1992 M. Case, E. Carman, R. Yu, and M.J.W. Rodwell, "Picosecond Duration, Large-Amplitude Impulse Generation Using Electrical Soliton Effects."

Applied Physics Letters, Vol. 60, no. 24, pp. 3019-3021, June 15.

Journal Paper

51. 1992 E. Carman, M. Case, M. Kamegawa, R. Yu, and M.J.W. Rodwell, "V-Band and W-Band Broadband, Monolithic Distributed Frequency Multipliers."

1992 IEEE/MTT International Microwave Symposium, Albuquerque, NM, June 1-5.

Conference Paper

52. 1992 M.J.W. Rodwell, S. Allen, M. Kamegawa, K. Giboney, J. Karin, M. Case, R. Yu, and J.E. Bowers, "Picosecond Photodectectors Monolithically Integrated with High-Speed Sampling Circuits."

Presented at the AFCEA DoD Fiber Optics Conference, March 24-27.

Conference Paper

53. 1992 Y. Konishi, M. Kamegawa, M. Case, R. Yu, M.J.W. Rodwell, and D.B. Rutledge, "Broadband Millimeter-Wave GaAs Transmitters and Receivers Using Planar Bow-Tie Antennas."

Presented at the 1992 NASA Symposium on Space TeraHertz Technology, Ann Arbor, MI, March 24-26.

Conference Paper

54. 1992 E. Carman, M. Case, M. Kamegawa, R. Yu, K. Giboney, and M.J.W. Rodwell, "V-Band and W-Band Broadband, Monolithic Distributed Frequency Multipliers."

IEEE Microwave and Guided-Wave Letters, Vol. 2, No. 6, pp. 253-254, June.

Journal Paper

55. 1992 M. Case, E. Carman, R. Yu, and M.J.W. Rodwell, "Picosecond Duration, Large Amplitude Impulse Generation Using Electrical Soliton Effects on Monolithic GaAs Devices."

1992 IEEE Device Research Conference, Boston, MA, June 22-24.

Conference Paper

56. 1992 Y. Konishi, M. Kamegawa, M. Case, R. Yu, M.J.W. Rodwell, and D.B. Rutledge, "Picosecond Spectroscopy Using Monolithic GaAs Circuits."

Applied Physics Letters, Vol. 61, No 23, December 7.

Journal Paper

57. 1992 E. Carman, M. Case, M. Kamegawa, R. Yu, K. Giboney, and M.J.W. Rodwell, "Electrical Soliton Devices as >100 GHz Signal Sources"

1992 Ultrafast Phenomena VIII Conference, Antibes, France, June 8-12.

Conference Paper

58. 1992 R.Y. Yu, J. Pusl, Y. Konishi, M. Case, M. Kamegawa, and M. Rodwell, "A Time-Domain Millimeter-Wave Vector Network Analyzer."

IEEE Microwave and Guided Wave Letters, Vol. 2, No. 8, pp. 319-321, August.

Journal Paper

59. 1992 M.J.W. Rodwell, "GaAs Nonlinear Transmission Lines for Picosecond and mm-Wave Applications."

Presented at the IEEE Second International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits,

Conference Paper

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Duisburg, Germany, October 7-9. (Invited Paper)

60. 1992 R.Y. Yu, J. Pusl, Y. Konishi, M. Case, M. Kamegawa, and M.J.W. Rodwell, "8-96 GHz On-Wafer Network Analysis."

Presented at 1992 IEEE GaAs IC symposium, Miami, FL, October 5-7.

Conference Paper

61. 1992 K.S. Giboney, M.J.W. Rodwell, and J.E. Bowers, "Travelling-Wave Photodetectors."

Photonics Technology Letters, Vol. 4, No. 12, pp. 1363-1365, December.

Journal Paper

62. 1992 Y. Konishi, M. Kamegawa, M. Case, R. Yu, and M.J.W. Rodwell, "An Accurate, High Resolution 30-250 GHz Free-Space Vector Transmission Measurement System Using Monolithic GaAs Ics."

Presented at the 17th International Conference on Infrared and Millimeter Waves, Pasadena, CA, December 14-18.

Conference Paper

63. 1993 Y. Konishi, M. Kamegawa, M. Case, R. Yu, and M.J.W. Rodwell, "An NLTL-Based System for mm-Wave and Sub-mm-Wave Electromagnetic Measurements."

1993 IEEE/OSA Conference on Ultrafast Electronics and Optoelectronics, San Francisco, CA, January 25-27. Proceedings published by the OSA.

Conference Paper

64. 1992 Y. Konishi, S.T. Allen, M. Reddy, M.J.W. Rodwell, R.P. Smith and J. Liu, "AlAs/GaAs Schottky-Collector Resonant-Tunnel-Diodes."

1992 Engineering Foundation Workshop on Advanced Heterostructure Transistors, Kona, HI, November.

Conference Paper

65. 1993 R. Yu, M. Reddy, J. Pusl, S. Allen, M. Case, and M.J.W. Rodwell, "Full Two-Port On-Wafer Vector Network Analysis to 120 GHz Using Active Probes."

1993 IEEE Conference on Microwave Theory and Techniques, Atlanta, GA, June.

Conference Paper

66. 1993 Y. Konishi, S.T. Allen, M. Reddy, R. Yu, M.J.W. Rodwell, R.P. Smith, and J. Liu, "AlAs/GaAs Schottky-Collector Resonant-Tunnel-Diodes and Travelling-Wave Pulse Generators."

Postdeadline paper presented at the 1993 IEEE/OSA Conference on Ultrafast Electronics and Optoelectronics, San Francisco, CA, January 25-27. Proceedings to be published by the OSA.

Conference Paper

67. 1993 Y.-G. Wey, K.S. Giboney, J.E. Bowers, and M.J.W. Rodwell, "110 GHz Double Heterostructure GaInAs/InP p-i-n Photodiode."

Postdeadline paper presented at the 1993 IEEE/OSA conference on Ultrafast Electronics and Optoelectronics, San Francisco, CA, January 25-27. Proceedings to be published by the OSA.

Conference Paper

68. 1993 K.S. Giboney, Y.-G. Wey, J.E. Bowers, and M.J.W. Rodwell, "High-Speed GaInAs/InP p-i-n Photodetectors with Integrated Bias Tees."

Postdeadline paper presented at the 1993 International Conference on InP and Related Materials, Paris, France, April 18-22.

Conference Paper

69. 1993 M.J.W. Rodwell, M. Case, R. Yu, S. Allen, Invited presentation during the Conference Paper14

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M. Reddy, U. Bhattacharya, and K. Giboney, "Ultrashort Pulse Generation Using Nonlinear Microwave Transmission Lines."

1993 IEEE International Microwave Symposium, Workshop on Picosecond and Femtosecond Electromagnetic Pulses: Analysis and Applications, Atlanta, GA, June.

70. 1993 M.J.W. Rodwell, R. Yu, M. Reddy, S. Allen, M. Case, and U. Bhattacharya,"mm-Wave Network Analysis Using Nonlinear Transmission Lines."

Invited Presentation at the 14th Biennial IEEE/Cornell University Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Cornell, August 2-4.

Conference Paper, Plenary Session

71. 1993 Y. Konishi , S.T. Allen, M. Reddy, M.J.W. Rodwell, R.P. Smith and J. Liu, "AlAs/GaAs Schottky-Collector Resonant-Tunnel-Diodes."

Solid-State Electronics, Vol. 36, No. 12, pp. 1673-1676.

Journal Paper

72. 1993 M.J.W. Rodwell, S. Allen, M. Case, R. Yu, M. Reddy, U. Bhattacharya, and K. Giboney, "GaAs Nonlinear Transmission Lines for Picosecond and Millimeter-Wave Applications."

Proc. of 1993 European Microwave Convention, Madrid, Spain, September 8-10, pp. ??-??. (Invited Paper)

Conference Paper

73. 1993 Y. Konishi, M. Kamegawa , M. Case, R. Yu, S.T. Allen, and M.J.W. Rodwell, "A Broadband Free-Space Millimeter-Wave Vector Transmission Measurement System."

IEEE Trans. MTT, Vol. 42, No. 7, pp. 1131-1139, July.

Journal Paper

74. 1993 S.T. Allen, U. Bhattacharya, and M.J.W. Rodwell, "4 THz Sidewall-Etched Varactors for Sub-mm-Wave Sampling Circuits."

Proc. of 1993 IEEE GaAs IC Symposium, San Jose, CA, October, pp. ??-??.

Conference Paper

75. 1993 S.T. Allen, M. Reddy, M.J.W. Rodwell, R.P. Smith, J. Liu, S.C. Martin, R.E. Muller, "Submicron Schottky-Collector AlAs/GaAs Resonant Tunnel Diodes."

Proc. of 1993 International Electron Device Meeting, Washington DC, December.

Conference Paper

76. 1993 Y.G. Wey, K.S. Giboney, J.E. Bowers, M.J.W. Rodwell, P. Silvestre, P. Thiagarajan, and G.Y. Robinson, "110 GHz GaInAs/InP p-i-n Photodiodes with Integrated Bias Tees and Matched Resistors."

Photonics Technology Letters, Vol. 5, No. 11, November.

Journal Paper

77. 1993 S.T. Allen, U. Bhattacharya, and M.J.W. Rodwell, "4 THz Sidewall-Etched Varactors and Their Application in Sub-mm-Wave Sampling Circuits."

Electronics Letters, Vol. 29, No. 25, December 9.

Journal Paper

78. 1994 R.Y. Yu, Y. Konishi, S.T. Allen, M. Reddy, and M.J.W. Rodwell, "A Travelling-Wave Resonant Tunnel Diode Pulse Generator."

IEEE Microwave and Guided Wave Letters, Vol. 4, No. 7, July.

Journal Paper

79. 1994 K.S. Giboney, S.T. Allen, M.J.W. Rodwell, and J.E. Bowers, "1.5 ps Fall-Time Measurements By Free-Running Electro-

Proc. of 1994 IEEE/OSA Conference on Lasers and Electro-Optics (CLEO).

Conference Paper

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Optic Sampling."

80. 1994 R.Y. Yu, M. Reddy, J. Pusl, S.T. Allen, M.G. Case, and M.J.W. Rodwell, "Millimeter-Wave On-Wafer Waveform and Network Measurements Using Active Probes."

IEEE Trans. MTT, Vol. 43, No. 4, April 1994.

Journal Paper

81. 1994 M.J.W. Rodwell, R. Yu, S. Allen, U. Bhattacharya, and M. Reddy, "Nonlinear Wave Propagation Devices for Ultrafast Electronics."

Proc. of Conference on Ultra-Wideband Short-Pulse Electromagnetics, Weber Research Institute, Polytechnic University, Brooklyn, NY. (Invited Paper)

Conference Paper

82. 1994 M.J.W. Rodwell, S.T. Allen, R.Y. Yu, M.G. Case, M. Reddy, E. Carman, J. Pusl, M. Kamegawa, Y. Konishi, and R. Pullela, "Active and Nonlinear Wave Propagation Devices in Ultrafast Electronics and Optoelectronics." Publication

IEEE Proceedings, Vol. 82, No. 7, pp. 1037-1058, July. (Invited Paper)

Journal Paper

83. 1994 R.P. Smith, S.T. Allen, M. Reddy, S.C. Martin, J. Liu, R.E. Muller, and M.J.W. Rodwell, "0.1 µm Schottky-Collector AlAs/GaAs Resonant Tunneling Diodes."

IEEE Electron Device Letters, Vol. 15, No. 8, August.

Journal Paper

84. 1994 R.Y. Yu, M. Reddy, J. Pusl, S.T. Allen, M.G. Case, and M.J.W. Rodwell, "Millimeter-Wave On-Wafer Waveform and Network Measurements Using Active Probes."

Proc. of NASA/IEEE 5th International Symposium on Space Terahertz Technology, Ann Arbor, MI, May.

Conference Paper

85. 1994 M. Schlectweg, W. Reinhert, A. Bangert, J. Braunstein, P.J. Tasker, R. Bosch, W.H. Haydl, W. Bronner, A. Hulsmann, K. Kohler, J. Seibel, R. Yu, and M.J.W. Rodwell, "High Performance MMICs in Coplanar-Waveguide Technology for Commercial V-Band and W-Band Applications."

Proc. of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, San Diego, CA, May 22-25.

Conference Paper

86. 1994 M.J.W. Rodwell, R. Yu, M. Reddy, S. Allen, and U. Bhattacharya, "Active Probes For On-Wafer Millimeter-Wave Network Analysis."

Proc. of IEEE Conference on Precision Electromagnetic Measurements, Boulder, CO, June. (Invited Paper)

Conference Paper

87. 1993 R.H. Walden, W.E. Stanchina, R.A. Metzger, R.Y. Loo, J. Schaffner, M.W. Pierce, Y.K. Brown, F. Williams, V. Jones, J. Pikulski, M.J.W. Rodwell, K. Giboney, R.A. Muller, and J.F. Jensen, "Broadband Optoelectronic Integrated Receiver Front-Ends Comprising InP-Based Heterojunction Bipolar Transistors and Base-Collector Photodiodes."

Proc. of 1994 IEEE/OSA Conference on Lasers and Electro-Optics (CLEO), Anaheim, CA, February 22.

Conference Paper

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88. 1994 R.E. Muller, S.C. Martin, R.P. Smith, S.T.

Allen, M. Reddy, and M.J.W. Rodwell, "Electron Beam Lithography for the Fabrication of Air-Bridged, Submicron Schottky Collectors."

Proc. of 38th International Symposium on Electron, Ion, and Photon Beams.

Conference Paper

89. 1994 R.E. Muller, S.C. Martin, R.P. Smith, S.T. Allen, M. Reddy, U. Bhattacharya, and M.J.W. Rodwell, "Electron-Beam Lithography for the Fabrication of Air-Bridged, Submicron Schottky Collectors."

Journal of Vacuum Science and Technology, Nov./Dec.

Journal Paper

90. 1994 K. Giboney, R. Nagarajan, T. Reynolds, S. Allen, R. Mirin, M.J.W. Rodwell and J. Bowers, "172 GHz, 42% Quantum Efficiency p-i-n Travelling-Wave Photodetector."

Proc. of 52nd annual IEEE Device Research Conference, Boulder, CO, June.Proc. of Engineering Foundation Conference on High Speed Optoelectronic Devices for Communications and Interconnects, San Luis Obispo, CA, Aug. 14-18.

Postdeadline Conference Paper

91. 1994 S.T. Allen, U. Bhattacharya, and M.J.W. Rodwell, "725 GHz Sampling Circuits Integrated with Nonlinear Transmission Lines." Publication

Proc. of 52nd Annual IEEE Device Research Conference, Boulder, CO, June.

Conference Paper

92. 1994 K.S. Giboney, S.T. Allen, M.J.W. Rodwell, and J.E. Bowers, "Picosecond Measurements by Free-Running Electro-Optic Sampling."

IEEE Photonics Technology Letters, Vol. 6, No. 11, pp. 1353-1355, November.

Journal Paper

93. 1994 R.H. Walden, W.E. Stanchina, R.A. Metzger, R.Y. Loo, J. Schaffner, M.W. Pierce, Y.K. Brown, F. Williams, V. Jones, J. Pikulski, M.J.W. Rodwell, K. Giboney, R.A. Muller, and J.F. Jensen, "Broadband Optoelectronic Integrated Receiver Front-Ends Comprising InP-Based Heterojunction Bipolar Transistors and Base-Collector Photodiodes."

Proc. of Engineering Foundation Conference on High Speed Optoelectronic Devices for Communications and Interconnects, San Luis Obispo, CA, Aug. 14-18.

Conference Paper

94. 1994 S.J. Allen, B.J. Keay, J.P. Kaminski, K.L. Campman, A.C. Gossard, U. Bhattacharya, M.J.W. Rodwell, and J. Galan, "Transport in Semiconductor Nanostructures in the Presence of Intense Terahertz Electric Fields."

Proc. of 19th International Conference on Infrared and Millimeter-waves, October 17-21. (Invited Plenary Talk)

Conference Paper

95. 1994 U. Bhattacharya, S.T. Allen, and M.J.W. Rodwell, "DC-725 GHz Sampling Circuits and Subpicosecond Nonlinear Transmission Lines Using Elevated Coplanar Waveguide." Publication

IEEE Microwave and Guided Wave Letters, Vol. 5, No. 2, pp. 50-52, February,.

Journal Paper

96. 1994 K.S. Giboney, R. Nagarajan, T.E. Reynolds, IEEE Photonics Technology Journal Paper17

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S.T. Allen, R.P. Mirin, M.J.W. Rodwell, and J.E. Bowers, "Travelling-Wave Photodetectors with 172-GHz Bandwidth and 76-GHz Bandwidth-Efficiency Product."

Letters, Vol. 7, No. 4, pp. 412-414.

97. 1994 M. Reddy, M.J. Mondry, M.J.W. Rodwell, S.C. Martin, R.E. Muller, R.P. Smith, D.H. Chow, and J.N. Schulman, "Fabrication and DC, Microwave Characteristics of Submicron Schottky-Collector AlAs/In0.53Ga0.47As/InP Resonant Tunneling Diodes."

Journal of Applied Physics, Vol 77, No. 9, pp. 4819-4821, May 1.

Journal Paper

98. 1994 B.J. Keay, S.J. Allen, Jr., J.P. Kaminski, K.L. Campman, A.C. Gossard, U. Bhattacharya, M.J.W. Rodwell, and J. Galan, "Sequential Resonant Tunneling via Photon Virtual States in Semiconductor Superlattices."

Proc. of ICPS-22. Conference Paper

99. 1995 J. Pusl, B. Agarwal, R. Pullela, L.D. Nguyen, M.V. Lee, M.J.W. Rodwell, L. Larson, J.F. Jensen, R.Y. Yu, and M.G. Case, "Capacitive Division Travelling-Wave Amplifier with 340 GHz Gain-Bandwidth Product." Viewgraphs

Proc. of 1995 IEEE MTT-S International Microwave Symposium, Orlando, FL, May 15-19.

Conference Paper

100. 1995 M. Reddy, M.J. Mondry, S.C. Martin, R.E. Muller, R.P. Smith, M.J.W. Rodwell, D.H. Chow, and J.N. Schulman, "Submicron Schottky-Collector AlAs/InGaAs/InP Resonant Tunnel Diodes."

Proc. of 1995 OSA Conference on Ultrafast Electronics and Optoelectronics, Dana Pt., CA, March.

Conference Paper

101. 1995 R. Pullela, U. Bhattacharya, S.T. Allen , and M.J.W. Rodwell, "Diode Multiplexer/ Demultiplexer IC's for 100 GB/s Fiber-Optic Transmission."

Proc. of 1995 OSA Conference on Ultrafast Electronics and Optoelectronics, Dana Pt., CA, March. (Invited Paper)

Conference Paper

102. 1995 U. Bhattacharya, M.J. Mondry, G. Hurtz, I. Tan, R. Pullela, M. Reddy, J. Guthrie, M.J.W. Rodwell, J.E. Bowers, "Schottky-Collector Heterojunction Bipolar Transistors: Device Scaling Laws for fmax beyond 500 GHz." Digest

Proc. of 1995 OSA Conference on Ultrafast Electronics and Optoelectronics, Dana Pt., CA, March.

Conference Paper

103. 1995 K.S. Giboney, M.J.W. Rodwell, and J.E. Bowers, "Field-Screening Effects in Travelling-Wave and Vertically Illuminated p-i-n Photodetectors."

Proc. of 1995 IEEE/OSA Conference on Lasers and Electro-Optics.

Conference Paper

104. 1995 M.J.W. Rodwell, J.E. Bowers, R. Pullela, K. Giboney, J. Pusl, B. Agarwal, and L.D. Nguyen, "Electronic & Optoelectronic Components for Fiber Transmission at Bandwidths Approaching 100 GHz."

Proc. of 1995 LEOS Summer Topical Meeting on RF Optoelectronics, Keystone, Bolder, CO, August. (Invited Paper)

Conference Paper

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105. 1995 M. Reddy, R.Y. Yu, H. Kroemer, M.J.W. Rodwell, S.C. Martin, R.E. Muller, and R.P. Smith, "Bias Stabilization for Resonant Tunnel Diode Oscillators."

IEEE Microwave and Guided Wave Letters, Vol. 5, No. 7, pp. 219-221, July.

Journal Paper

106. 1995 J. Bowers, K. Giboney, and M.J.W. Rodwell, "Travelling-Wave Photodetectors."

Proc. of 1995 IEEE MTT-S International Microwave Symposium, Orlando, FL, May 15-19. (Invited Paper)

Conference Paper

107. 1995 U. Bhattacharya, M.J. Mondry, G. Hurtz, I. Tan, R. Pullela, M. Reddy, J. Guthrie, M..J.W. Rodwell, and J.E. Bowers, "Transferred-Substrate Schottky-Collector Heterojunction Bipolar Transistors: First Results and Scaling Laws for High fmax."

IEEE Electron Device Letters, Vol 16, No. 8, pp. 357-359, August.

Journal Paper

108. 1995 A.K. Peterson, T. Reynolds, R. Nagarajan, Y.-G. Wey, J.E. Bowers and M.J.W. Rodwell, "3-MHz-30-GHz Travelling-Wave Optical Front-End Receiver."

Proc. of 1995 Conference on Optical Fiber Communications.

Conference Paper

109. 1995 R. Pullela, U. Bhattachraya, S.T. Allen, and M.J.W. Rodwell, "Multiplexer/ Demultiplexer IC for 100 Gb/s Fiber-Optic Transmission."

IEEE Journal of Solid-State Circuit, March.

Journal Paper

110. 1995 J.J. Brown, W.E. Stanchina, M. Hafizi, R.H. Walden, H.C. Sun, and M. Rodwell, "InP Based Mixed Signal / Mixed Device Technology."

Proc. of GaAs Mantech Conference, April 28-May 2, 1996, San Diego, pp. 160-163.

Conference Paper

111. 1995 J. Bowers, A.K. Petersen, M. Rodwell, N. Dagli, M. Melliar-Smith, A. Shakouri, K. Runge, S. Beccue, and K.C. Wang, "High Speed TDM Systems."

Proc. of Topical Meeting on Photonics in Switching, Sendia, Japan, April 21-25.

Conference Paper

112. 1996 U. Bhattachraya, L. Samoska, R. Pullela, J. Guthrie, Q. Lee, B. Agarwal, D. Mensa, and M.J.W. Rodwell, "170 GHz Transferred-Substrate Heterojunction Bipolar Transistor."

Electronics Letters, Vol. 32, No. 15, pp. 1405-1406, 18th July, 1996.

Journal Paper

113. 1996 U. Bhattacharya, L. Samoska, R. Pullela, J. Guthrie, Q. Lee, B. Agarwal, D. Mensa, M.J. Mondry, G. Hurtz, and M.J.W. Rodwell "100 GHz Transferred-Substrate Schottky-Collector Heterojunction Bipolar Transistor."

Proc. of 1996 IEEE Conference on InP and Related Materials, Schwabisch Gmund, Germany, May, pp. 145-148.

Conference Paper

114. 1996 M. Reddy, M.J. Mondry, A.C. Molnar, U. Bhattacharya, M.J.W. Rodwell, S.C. Martin, R.E. Muller, and R.P. Smith, "Monolithic RTD Array Oscillators at 100 and 200 GHz with On-Wafer Bias Stabilization.” Digest

Proc. of 1996 IEEE Device Research Conference, Santa Barbara, CA, June.


115. 1996 S. Zeuner, B.J. Keay, S.J. Allen, K.D. Maranowski, A.C. Gossard, U. Bhattacharya, and M.J.W. Rodwell, “Transition from

Proc. of Int’l Conference on Quantum Devices and Circuits, Alexandria, Egypt, June, pp.

Conference Paper

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Classical to Quantum Dynamics in Superlattices in Intense THZ Electrical Fields.”

124-129.

116. 1996

M.J.W. Rodwell, "Electronic Components for High Speed Fiber Transmission." Digest

Proc. of Engineering Foundation Conference on High Speed Optoelectronics for Communications, Snowbird, Utah, Aug. 11-15.

Conference Paper

117. 1996 K.S. Giboney, M.J.W. Rodwell, J.E. Bowers, "Traveling-Wave Photodetector Design and Measurements."

IEEE Journal of Selected Topics in Quantum Electronics, Vol. 2 , No. 3, September, pp. 622-629.

Journal Paper

118. 1996 A.C. Molnar, M. Reddy, M.J. Mondry, M.J.W. Rodwell, and S. J. Allen, Jr., "Submm-wave Monolithic RTD Oscillator Arrays to 650 GHz."

Proc. of 1996 IEEE Electron Device Meeting, San Francisco, December.


119. 1997 M. Reddy, S.C. Martin, A.C. Molnar, R.E. Muller, R.P. Smith, P.H. Siegel, M.J. Mondry, M.J.W. Rodwell, and S.J. Allen, Jr., "Monolithic Schottky-Collector Resonant Tunnel Diode Oscillator Arrays to 650GHz." Digest

IEEE Electron Device Letters, Volume 18, No. 5, May 1997, pp. 218-221.

Journal Paper

120. 1997 B. Agarwal, D. Mensa, R. Pullela, Q. Lee, U. Bhattacharya, L. Samoska, J. Guthrie, and

M. J. W. Rodwell, "A 277 GHz fmax Transferred-Substrate Heterojunction Bipolar Transistor." Digest

IEEE Electron Device Letters, Volume 18, No. 5, May 1997, pp. 228-231. Proc. of 1997 IEEE Conference on InP and Related Materials, May, Hyannis, MA, pp. 633-636.

Journal Paper Conference Paper best student paper award

121. 1997 M. Rodwell, et al, "Submicron Lateral Scaling of Vertical-Transport Devices: Transferred-Substrate Bipolar Transistors and Schottky Collector Tunnel Diodes." Digest

Proc. of OSA Topical Meeting on Ultrafast Electronics and Optoelectronics, March, Incline Village, NV, pp. 192-193.

Invited Conference Paper

122. 1997 R. Pullela, Q. Lee, B. Agarwal, D. Mensa, J. Guthrie, L. Samoska, M. Rodwell, " A > 400 GHz fmax Transferred Substrate Heterojunction Bipolar Transister IC Technology.” Digest Publication

Proc. of 1997 IEEE Device Research Conference, June, Fort Collins, CO. IEEE Electron Device Letters, March 1998, Vol. 19, Number 3, p.77

Conference Paper

123. 1997 M. Reddy, S.C. Martin, A.C. Molnar, R.E. Muller, R.P. Smith, P.H. Siegel, M.J.

Proc. of 8th international Symposium on Space Terahertz

Conference Paper

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Mondry, M.J.W. Rodwell, and S.J. Allen, Jr., "Monolthic Schottky-Collector Resonant Tunnel Diode Oscillator Arrays to 650 GHz."

Technology.

124. 1997 K.S. Giboney, M.J.W. Rodwell, J.E. Bowers, "Traveling-Wave Photodetector Theory."

IEEE Transactions on Microwave Theory and Techniques, Vol. 45, No. 8, August 1997, pp. 1310-1319.

Journal Paper

125. 1997 M.J.W. Rodwell, "500 GHz Ultra High Speed Devices."

Proc. of IEEE Cornell Conference on Advanced Concepts in High Speed Semicondcutor Devices and Circuits.

Conference Paper(Invited)

126. 1997 Q. Lee, B. Agarwal, R. Pullela, D. Mensa, J. Guthrie, L. Samoska, and M.J.W. Rodwell, "A > 400 GHz fmax Transferred-Substrate Heterojunction Bipolar Transistor IC Technology.”

IEEE Electron Device Letters, Vol 19, No. 3, pp. 77-79, March.

Journal Paper

127. 1997 B. Agarwal, D. Mensa, Q. Lee, R. Pullela, J. Guthrie, L. Samoska and M. J. W. Rodwell, "A 50 GHz Feedback Amplifier with AlInAs/GaInAs Transferred-substrate HBT." Digest

Proc. of 1997 IEEE International Electron Device Meeting, pp. 743-746.

Conference Paper

128. 1998 M. Yung, J. Jensen, G. Raghavan, M.J.W. Rodwell, M. Hafizi, R. Walden, K. Elliott, M. Kardos, Y. Brown, M. Montes, H. Sun, and W. Stanchina, "An InP Low Power Receiver IC Integrating AGC Amplifier, Clock Recovery Circuit and Demultiplexer." Digest

Proc. of 1998 GaAs IC Symposium, Anaheim, CA, October 12-15.

Conference Paper

129 1998 M.J.W. Rodwell, B. Agarwal, R. Pullela, D. Mensa, Q. Lee, J. Guthrie, and L. Samoska, "Ultrafast Transferred-Substrate Heterojunction Bipolar Transistor ICs forHigh Speed Fiber-Optic Transmission." Digest

Proc. of 1998 IEEE/OSA Conference on Optical Fiber Communication, OFC Technical Digest.


130 1998 B. Agarwal, R. Pullela, U. Bhattacharya, D. Mensa, Q. Lee, L. Samoska, J. Guthrie, and M. J.W. Rodwell, "Ultrahigh Fmax AlInAs/GaInAs Transferred-Substrate Heterojunction Bipolar Transistors for Integrated Circuits Applications." Publication

International Journal of High Speed Electronics and Systems, Vol. 9, No. 2, pp. 643-670. "High-speed Circuits for Lightwave Communications" edited by K C Wang, in Selected Topics in Electronics and Systems, Vol. 13, edited by P. K.Tien, World Scientific Publishing, Singapore, pp. 331-358.

Journal Paper(Invited) Book chapter

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131. 1998 B. Agarwal, A.E. Schmitz, J.J. Brown,

M. Matloubian, M. Case, M. Le, M. Liu, and M.J.W. Rodwell, "112-GHz, 157- GHz and 180-GHz InP HEMT Traveling-Wave Amplifiers." Publication

IEEE Transactions on Microwave Theory and Techniques, Vol. 46, No. 12, pp. 2553-2559, December.

Journal Paper

132. 1998 K. Kiziloglu, M. Yung, H. Sun, S. Thomas, M. Kardos, R. Walden, J. Brown, W. Stanchina, V. Kaman, M.J.W. Rodwell, "InP-Based High Sensitivity pin/HEMT/HBT Monolithic Integrated Optoelectronic Receiver." Digest

1998 Conference on InP and Related Materials, Tsukuba, Japan, May, pp. 443-446.

Conference Paper

133. 1998 R. Pullela, D. Mensa, B. Agarwal, Q. Lee, J. Guthrie, and M.J.W. Rodwell, "48 GHz Static Frequency Divider in Ultrafast Transferred-Substrate Heterojunction Bipolar Transistor Technology." Digest

Conference on InP and Related Materials, Tsukuba, Japan, May, pp. 68-71.

Conference Paper

134. 1998 B. Agarwal, R. Pullela, Q. Lee, D. Mensa,J. Guthrie, and M.J.W. Rodwell, "80 GHz Distributed Amplifiers with Transferred-Substrate Heterojunction Bipolar Transistors."

1998 IEEE MTT-S Microwave Symposium, Baltimore, MD, pp. 1843-1846, June.

Conference Paper

135. 1998 J. Guthrie, D. Mensa, B. Agarwal, Q.Lee, R. Pullela, and M.J.W. Rodwell, "HBT IC Process with a Copper Substrate."

IEE Electronics Letters, Vol. 34, No. 5, pp. 467-468, March 5.

Journal Paper

136. 1998 L. Samoska, R. Pullela, B. Agarwal, D. Mensa, Q. Lee, V. Kaman, J. Guthrie, and M. J. W. Rodwell, "InP Heterojunction Bipolar Transistor Decision Circuits." Digest

1998 IEEE MTT-S Microwave Symposium, Baltimore, MD, pp. 1843-1846, June.

Conference Paper

137. 1998 B. Agarwal, Q. Lee, R. Pullela, D. Mensa,J. Guthrie, and M. J. W. Rodwell, "A 50 GHz Broadband Differential Amplifier with Transferred-Substrate HBTs.” Digest

Tenth International Conference on Indium Phosphide and Related Materials (IPRM’98), University of Tsukuba, University Hall, Tsukuba, Ibaraki, Japan, pp. 3-4, May 11-15.

Conference Paper(Post Deadline)

138. 1998 Q. Lee, S.C. Martin, D. Mensa, R. Pullela, R.P.Smith, B. Agarwal, J. Guthrie, and M.J.W. Rodwell, "Deep Submicron Transferred-Substrate Heterojunction Bipolar Transistors." Digest

1998 Device Research Conference, Charlottesville, VA, pp. 26-27, June 22-24.

Conference Paper

139. 1998 B. Agarwal, Q. Lee, R. Pullela, D. Mensa, J. Guthrie, and M. J.W. Rodwell, "A Transferred-Substrate HBT Wide-Band Differential Amplifier

IEEE Microwave and Guided Wave Letters, Vol. 8, No. 7, pp. 263-265,

Journal Paper

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to 50 GHz.” Publication

July.

140. 1998 B. Agarwal, Q. Lee, R. Pullela, D. Mensa, J. Guthrie, and M. J.W. Rodwell, "Broadband Feedback Amplifiers with AlInAs/GaInAs Transferred-Substrate HBT.” Publication

IEE Electronics Letters, Vol. 34, No. 13, pp. 1357-1358, June 25.

Journal Paper

141. 1998 M.J.W. Rodwell, Q. Lee, D. Mensa, J. Guthrie, S.C. Martin, R.P. Smith, R. Pullela, B. Agarwal, S. Jaganathan, T. Mathew, and S. Long, "Transferred-Substrate HBT Integrated Circuits.” Digest

Topical Workshop on Heterostructure Microelectronics for Information Systems Applications, Shonan Village Center, Japan, August 30, pp. 1-5.


142. 1998 Q. Lee, D. Mensa, R. Pullela, J. Guthrie, S.C. Martin, R.P. Smith, S. Jaganathan, T. Mathew, B. Agarwal, S. Long, and M.J.W. Rodwell, "48 GHz Digital ICs Using Transferred-Substrate HBTs." Digest

GaAs IC Symposium, Atlanta, GA, November 1-4, pp. 113-116.


143. 1998 D. Mensa, Q. Lee, J. Guthrie, S. Jaganathan, and M.J.W. Rodwell, "Baseband Amplifiers in Transferred-Substrate HBT Technology." Digest

IEEE; GaAs IC Symposium, Atlanta, GA, pp. 33-36, November 1-4.

Conference Paper

144. 1998 O. Wohlgemuth, B. Agarwal, R. Pullela, D. Mensa, Q. Lee, J. Guthrie, M. J. W. Rodwell, R. Reuter, J. Braunstein, M. Schlechtweg and K. Köhler "An NLTL-Based Integrated Circuit for a 70-200 GHz VNA System." Digest Viewgraphs

European Microwave Convention.

Conference Paper ConferenceBest Paper Award (not student-only)

145. 1998 Wohlgemuth, B. Agarwal, R. Pullela, D. Mensa, Q. Lee, J. Guthrie, T. Krems, M. J. W. Rodwell, R. Reuter, J. Braunstein, M. Schlechtweg, and K. Köhler, "An Integrated Circuit for Network Analysis Within 50-200 GHz." Digest

The Sixth IEEE International Conference on Terahertz Electronics,Weetwood Hall, The University of Leeds, United Kingdom, pp. 113-116, September 3-4.

Conference Paper

146. 1998 R. Pullela, D. Mensa, Q. Lee, B. Agarwal, J. Guthrie, S. Jaganathan, and M.J.W. Rodwell, "48 GHz Static Frequency Dividers in the Transferred-Substrate HBT Technology."

IEE Electronics Letters, Vol 34, No. 16, pp. 1580-81, August 6.

Journal paper

147. 1998 B. Agarwal, A.E. Schmitz, J.J. Brown, M. Le, M. 1998 IEEE Radio Frequency Conference Paper23

MARK RODWELL


Liu, and M.J.W. Rodwell, "A 1-157 GHz InP HEMT Traveling-Wave Amplifier." Digest

Integrated Circuits (RFIC) Symposium, Baltimore, MD, pp. 21-23, June 7-9.

Student Best Paper AwardSecond Prize (tie)

148. 1998 B. Agarwal, R. Pullela, Q. Lee, D. Mensa, J. Guthrie, and M. J.W. Rodwell, "80-GHz Distributed Amplifiers with Transferred-Substrate Heterojunction Bipolar Transistors." Publication

IEEE Transactions on Microwave Theory and Techniques, Vol. 46, No. 12, pp. 2302-2307, December.

Journal Paper

149. 1998 B. Agarwal, Q. Lee, D. Mensa, R. Pullela,J. Guthrie and M.J.W. Rodwell, “Broadband Feedback Amplifiers with AllnAs/GainAs Transferred-Substrate HBT.”

IEE Electronic Letters, Vol. 34, No. 13, pp. 1357-1358, June 25.

Journal Paper

150. 1998 D. Mensa, Q. Lee, J. Guthrie, S. Jaganathan, and M.J.W. Rodwell, “Transferred-Substrate HBTs with 250 GHz Current-Gain Cutoff Frequency.” Digest

International Electron Devices Meeting IEDM Digest, San Francisco, CA pp. 657-660, December.

Conference Paper

151. 1999 Q. Lee, D. Mensa, J. Guthrie, M. J. W. Rodwell, S. Long, S. C. Martin, R. P. Smith. Y. Betser, S. Jaganathan, T. Mathew, P. Krishnan, and C. Serhan “Ultra High Frequency HBT Integrated Circuits.” Support:N00014-98-1-0068, N00014-99-10041 Digest

Conference on Ultrafast Electronics and Optoelectronics, Aspen, CO, pp. 1-4, April. also: Topics in “Ultrafast Electronics and Optoelectronics,” TOPS Vol. 28.

ConferencePaper(Invited) Book Chapter

152. 1999 M. J. W. Rodwell, U. Mishra, L. McCarthy, and P. Kozodoy, “Prospects for Wide Bandwidth Transferred Substrate Power HBTs.” Digest

ONR Workshop on Wide Bandgap Bipolar Devices, Meeting Program & Abstract Book, Panama City Beach, FL, January 25-28.

Conference Paper

153. 1999 M.J.W. Rodwell, Q. Lee, D. Mensa, J. Guthrie, Y. Betser, S.C. Martin, R.P. Smith, S. Jaganathan, T. Mathew, P. Krinshan, C. Serhan, and S. Long, “Ultra High Frequency Integrated Circuits Using Transferred- Substrate Heterojunction Bipolar Transistors.” Support:N00014-98-1-0068, N00014-99-10041F4962096-1-0019 Digest

IEEE International Symposium on Circuits and Systems, Orlando, FL, pp. 1-4, June.

ConferencePaper(Invited)

154. 1999 O. Wohlgemuth, M.J.W. Rodwell, R. Reuter, J. Braunstein, and M. Schlechtweg, “Active Probes for 2-port Network Analysis Within 70-

IEEE MTT-S International Microwave Symposium Digest, Vol. 4 of 4,

Conference Paper

24

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230 GHZ.” Digest

Anaheim, CA, pp. 1635-1638, June 13-19.

155. 1999 M. Yung, J. Jensen, R. Walden, M.J.W. Rodwell, G. Raghavan, K. Elliott and W. Stanchina, “Highly Integrated InP HBT Optical Receivers.” Publication

IEEE Journal of Solid-State Circuits, Vol. 34, No. 2, pp. 219-227, February.

Journal Paper

156. 1999 K. Krishnamurthy, S.I. Long, and M.J.W. Rodwell, “Cascode-Delay-Matched Distributed Amplifiers for Efficient Broadband Microwave Power Amplification.” Digest

IEEE MTT-S International Microwave Symposium Digest, Vol. 2 of 4, Anaheim, CA, pp. 819-822, June 13-19.

Conference Paper 2nd Prize in Student Paper Award

157. 1999 Q. Lee, D. Mensa, J. Guthrie, S. Jaganathan,T. Mathew, Y. Betser, S. Krishnan, S. Ceran, and M.J.W. Rodwell, “66 GHz Static Frequency Divider in Transferred-Substrate HBT Technology.” Support:N00014-98-1-0068, N00014-99-1-0041 Digest

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Anaheim, CA, pp. 87-90, June 13-15.

Conference Paper3rd Prize in Student Paper Award

158. 1999 C.-H. Chen, K. Krishnamurthy, S. Keller, G. Parish, M.J.W. Rodwell, U.K, Mishra, and Y.-F. Wu, “AlGaN/GaN Dual-gate Modulation-doped Field-Effect Transistors.” Support:N0014-98-1-0750 Publication

IEE Electronics Letter, Vol. 35, No. 11, pp. 933-934, May 27.

Journal Paper

159. 1999 J.R. Guthrie, D. Mensa, T. Mathew, Q. Lee, S. Krishnan, S. Jaganathan, S. Ceran, Y. Betser, and M.J.W. Rodwell, “A 50mm Copper/Polymer Substrate HBT IC Technology for >100GHz MMICs.” Support:DAAH04-98-1-0001, F49620-96-1-0019 Digest Viewgraphs

Eleventh International Conference on Indium Phosphide and Related Materials, Davos, Switzerland, May 16-20.

Conference Paper

160. 1999 Q.Lee, S.C. Martin, D. Mensa, R.P. Smith, J. Guthrie, S. Jaganathan, T. Mathew, S. Krishnan, S. Ceran, and M.J.W. Rodwell, “Submicron Transferred-Substrate Heterojunction Bipolar Transistors with Greater than 800 GHz fmax.”

Proc. Eleventh International Conference on Indium Phosphide and Related Materials, Davos, Switzerland, pp. 175-178, May 16-20.

Conference Paper Best Student Paper Award

25

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Support:N00014-99-23063, N00014-98-0068 Digest

161. 1999 M.J.W. Rodwell, Q. Lee, D. Mensa, J. Guthrie, Y. Betser, S.C. Martin, R.P. Smith, S. Jaganathan, T. Mathew, P. Krishnan, C. Serhan, and S. Long, “Transferred-Substrate Heterojunction Bipolar Transistor Integrated Circuit Technology.” Support:N00014-98-1-0068, N00014-99-10041N00014-98-1-0830, F4962096-1-0019 Digest Viewgraphs

Eleventh International Conference on Indium Phosphide and Related Materials, Davos, Switzerland, pp. 1-6,May 16-20.


162. 1999 Q. Lee, S.C. Martin, D. Mensa, R.P. Smith, J. Guthrie, S. Jaganathan, Y. Betser,T. Mathew, S. Krishnan, L. Samoska, and M.J.W. Rodwell, “Submicron-Transferred-Substrate Heterojunction Bipolar Transistors with Greater than 1 THz fmax.” Support:N00014-99-23063, N00014-98-0068 Digest

57th Device Research Conference, University of California, Santa Barbara, CA, June 28-30.

Conference Paper(Post Deadline)

163. 1999 M.J.W. Rodwell, “Bipolar Technologies & Optoelectronics.” Digest

IEEE MTT-S Symposium. Workshop on Analog-Digital Conversion, Workshop Technologies for the Next Millenium, Anaheim, CA, June 18-23..

WorkshopPaper(Invited)

164. 1999 M.J.W. Rodwell, “Analog-Digital Conversion Overview: Architectures & Metrics.” Digest

IEEE MTT-S Symposium. Workshop on Analog-Digital Conversion, Workshop Technologies for the Next Millenium, Anaheim, CA, June 18-23.

Workshop Paper(Invited)

165. 1999 Q.Lee, D. Mensa, J. Guthrie, M.J.W. Rodwell, S. Long, S.C. Martin, R.P. Smith, Y. Betser, S. Jaganathan, T. Mathew, P. Krishnan, and C. Serhan, “Ultra High Frequency HBT Integrated Circuits.” Support:N00014-98-1-0068, N00014-99-10041F4962096-1-0019 Digest

1999 Ultrafast Electronics and Optoelectronics Technical Digest, Snowmass Conference Center, Snowmass Village at Aspen, CO, Conference Edition, pp. 93-96, April 14-16.


166. 1999 D. Mensa, R. Pullela, Q. Lee, J. Guthrie, IEEE Journal of Solid-State Journal Paper26

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S.C. Martin, R.P. Smith, S. Jaganathan, T. Mathew, B. Agarwal, S. Long, and M.J.W. Rodwell, “48 GHz Digital ICs and 85 GHz Baseband Amplifiers Using Transferred-Substrate HBTs.” Support:N00014-95-1-0688, N00014-98-1-0068F4962096-1-0019, 8 960808 Publication

Circuits, Vol. 34, No. 9, pp. 1196-1203, September.

167. 1999 K.Krishnamurthy, R. Vetury, S. Keller, M.J.W. Rodwell, S.I. Long, and U. Mishra, “Broad-band Microwave Power Amplifiers in GaN Technology.” Digest

IEEE Topical Workshop on Power Amplifiers for Wireless Communications, San Diego, CA, September 13-14.


168. 1999 Q. Lee, S. C. Martin, D. Mensa, R. P. Smith,J. Guthrie, and M.J.W. Rodwell, “Submicron Transferred-Substrate Heterojunction Bipolar Transistors.” Publication

IEEE Electron Device Letters, Vol. 20, No. 8. pp. 396-398, August.

Journal Paper

169. 1999 M.J.W. Rodwell, “Device and Interconnect Technologies for 100 GHz Mixed-Signal ICs.” Digest

IEEE Workshop on Interconnections within High-Speed Digital Systems, Santa Fe, NM, April.


170. 1999 L.S. McCarthy, P. Kozodoy, M.J.W. Rodwell, S.P. Denbaars, and U.K. Misrha, “A1GaN/GaN Heterojunction Bipolar Transistor.” Publication

IEEE Electron Device Letters, Vol. 20, No. 6, pp. 277-279, June.

Journal Paper

171. 1999 K. Krishnamurthy, M.J.W. Rodwell, and S.I. Long, “A > 25% PAE 0.2-6 GHz Lumped Power Amplifier in a 18 GHz MESFET Technology.” Digest

IEEE GAAS IC Symposium, Monterey, CA,October 17-20, pp. 1-4.

Conference Paper

172. 1999 D. Mensa, Q. Lee, J. Guthrie, S. Jaganathan, and M.J.W. Rodwell, “Transferred-Substrate HBTs with 254 GHz f.” Support:N00014-98-1-0068 Publication

IEE Electronics Letters, Vol. 35, No. 7, pp. 605-607, April 1.

Journal Paper

173.

1999

O. Wohlgemuth, T. Krems, R. Reuter, M.J.W. Rodwell, W. Haydl and M. Schlechtweg, “Integrated Directional Coupler for 90 and 180 GHz.” Publication

IEEE Microwave and Guided Wave Letters,Vol. 9, No. 8, pp. 308-310,August.

Journal Paper

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174. 1999 O. Wohlgemuth, M.J.W. Rodwell, R. Reuter,

J. Braunstein, and M. Schlechtweg, “Active Probes for Network Analysis within 70-230 GHz.” Publication

IEEE Transactions on Microwave Theory and Techniques, Vol. 47, No. 12, December.

Journal Paper

175. 1999 Peter D. Capofreddi, Cynthia D. Baringer, Joseph F. Jensen, Mark J. W. Rodwell*, William P. Posey**, Michael W. Yung and Yi-Ming Xie, “A Clock and Data Recovery IC for Communications and Radar Applications.” Digest

Proc. of the Third International Workshop on Design of Mixed-Mode Integrated Circuits and Application, Puerto Vallarta, Mexico, July, pp. 88-90.

Conference Paper

176. 2000 S. Krishnan, D. Mensa, J. Guthrie, S. Jaganathan, T. Mathew, R. Girish, Y. Wei and M.J.W. Rodwell, “Broadband lumped HBT amplifiers.” Support:N00014-98-1-0068 Publication

IEE Electronics Letters, pp.466-7, Vol. 36, No. 5.

Journal Paper

177. 1998 L. McCarthy, P. Kozodoy, M.J.W. Rodwell,S. DenBaars and U.K. Mishra, “First Demonstration of an A1GaN/GaN Heterojunction Bipolar Transistor.” Support:N00014-98-1-0061, 98-0563-01 Digest

Proceedings of the 25th International Symposium on Compound Semiconductors, Inst. Phys Conference Ser. No. 162, Chapter 6, Nara, Japan, October 12-16, pp. 279-284

Conference Paper

178. 1998 L. McCarthy, P. Kozodoy, M.J.W. Rodwell,S. DenBaars and U.K. Mishra, “A First Look at A1GaN/GaN HBTs.” Publication

Compound Semiconductor Fall II, Vol. 4, No. 8, November 16-18.

Journal Paper

179. 2001 L. McCarthy, I. Smorchkova, H. Xing,P. Kozodoy, P. Fini, J. Limb, D. Pulfrey, J. Speck M.J.W. Rodwell, S.P. Denbaars, U.K. Mishra, “GaN HBT: Towards an RF device.” Publication

IEEE Transactions on Electron Devices, Vol.48, (no.3), IEEE, pp. 543-51, March.

Journal Paper

180. 2000 S. Jaganathan, D. Mensa, T. Mathew, Y. Betser, S. Krishnan. Y. Wei. D. Scott, M. Urteaga, M. Rodwell, “A 18 GHz Continuous Time å - D Modulator Implemented in InP Transferred Substrate HBT Technology.” Support:N00014-98-1-0830 Digest

22nd Annual IEEE GaAS IC Symposium 2000, Seattle, WA, November 5-8.

Conference Paper

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181.

2000 J.R. Guthrie, M. Urteaga, D. Scott, D. Mensa, T. Mathew, Q. Lee, S. Krishnan, S. Jaganathan, Y. Betser and M.J.W. Rodwell, “HBT MMIC 75GHz Power Amplifiers.” Support:DAAH04-98-1-0001, F49620-96-1-0019 Digest

2000 International Conference on Indium Phosphide and Related Materials, Williamsburg, VA, 14-18 May.

Conference Paper

182. 1999 L. McCarthy, P. Kozodoy, M.J.W. Rodwell,S. DenBaars and U.K. Mishra, “A1GaN/GaN Heterojunction Bipolar Transistor.” Publication

IEEE Electron Device Letters, Vol. 20, No.6, pp. 277-279, June.

Journal Paper

183.

2001 T. Mathew, S. Jaganathan, D. Scott, S. Krishnan, Y. Wei, M. Urteaga, M.J.W. Rodwell, and S. Long, “2 Bit Adder: Carry and Sum Logic Circuits at 19 Ghz Clock Frequency in InA1As/InGaAs HBT Technology.” Support:N00014-98-1-0068 Publication

IEE Electronics Letters, Vol. 37, No. 19, pp. 1156-1157, September 13.

Journal Paper

184. 2000 Karthikeyan Krishnamurthy, Ramakrishna Vetury, Stacia Keller, Umesh Mishra, Mark J. W. Rodwell and Stephen I. Long, “ Broadband GaAs MESFET and GaN HEMT Resistive Feedback Power Amplifiers.” Support:N00014-96-1-1215 Publication

IEEE Journal of Solid State Circuits, Vol. 35, No. 9, pp. 1285-1292, September.

Journal Paper

185. 2000 K. Krishnamurthy, Stacia Keller, Ching-Hui Chen, Robert Coffie, Mark Rodwell, Umesh K. Mishra, “Dual-gate A1GaN/GaN Modulation-doped Field-effect Transistors with Cut-Off Frequencies ƒT>60 GHz” Support:N0014-98-1-0750 Publication

IEEE Electron Device Letters, Vol. 21, No. 12, December.

Journal Paper

186 2000 S. Krishnan, D. Mensa. S. Jaganathan, T. Mathew, Y. Wei and M.J.W. Rodwell, “Broadband HBT Amplifiers.” Support:N00014-99-23063, N00014-98-0068 Digest

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Cornell, NY, August

Conference Paper

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187. 1999 Y. Betser, Q. Lee, S.C. Martin, D. Mensa, R.P. Smith, J. Guthrie, and M.J.W. Rodwell, “Submicron Transferred-Substrate Heterojunction Bipolar Transistors.” Support:N00014-98-1-0068, N00014-99-10041F4962096-1-0019 Digest Viewgraphs

International Conference on Infrared and Millimeter Waves, Monterey, CA, September 5-10.


188. 1999 Y. Betser, S. Jaganathan, T. Mathew, Q. Lee, J. Guthrie, D. Mensa, and M.J.W. Rodwell, “Low Voltage-Swing Techniques for 100 GHz Logic.” Digest

International Conference on Infrared and Millimeter Waves, Monterey, CA, September 5-10.

Conference Paper

189. 1999 M.J.W. Rodwell, Q. Lee, D. Mensa, S.C. Martin, R.P. Smith, P. Krishnan, C. Serhan, J. Guthrie, Y. Betser, S. Jaganathan, T. Mathew, and S. Long, “Heterojunction Bipolar Transistors with Greater than 1 THz Extrapolated Power-gain Cutoff Frequencies.” Support:DAAL01-96-K-3619 Digest

7th IEEE THz Conference, Nara, Japan, November 25-26.


190. 1999 C. Christoffersen, M. Ozkar, M. Steer, M. Case, M.J.W. Rodwell., “State Variable-based Transient Analysis Using Convolution.” Support:N00014-98-1-0068, N00014-99-10041N00014-98-1-0830 Publication

IEEE Transactions on Microwave Theory and Techniques, Vol. 47, No. 6, June.

Journal Paper

191. 2000 Mark Rodwell, Y. Betser, S. Jaganathan,T. Mathew, PK Sundararajan, S.C. Martin, R.P. Smith, Y. Wei, M. Urteaga, D. Scott,S. Long, “Submicron lateral scaling of HBTs and other vertical-transport devices: towards THz bandwidths.” Support:N00014-98-1-0068, N00014-99-10041 Digest

European GaAs Conference, Paris, France, October 2-6.

Conference Paper (Plenary)

192. 2001 Y. Betser, D. Scott, D. Mensa, S. Jaganathan. T. Mathew and Mark Rodwell, “InAIAs/InGaAs HBTs with Simultaneously High values of F and F max for mixed analog/digital applications.”

IEEE Electron Device Letters, Vol. 22, No. 2, pp. 56-58, February.

Journal Paper

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Support:N000-14-96-1-1215 Publication

193. 2000 K. Krishnamurthy, S.Keller, U.K. Mishra, M.J.W. Rodwell, S.I.Long, “Broad-band Microwave Power Amplifiers in GaN Technology.” Support:N00014-01-1-0066 Digest

22nd Annual IEEE GaAS IC Symposium 2000, Seattle, WA, November 5-8, pp. 33-36.

Conference Paper

194. 2000 Mark Rodwell, Y. Betser, S. Jaganathan,S. Krishnan, T. Mathew, Y. Wei, M. Urteaga, D. Scott, S. Long, R. Smith and S. Martin, “Bipolar Transistor ICs: 50GHz and Beyond.” Digest Viewgraphs

Keynote Speech for Advanced Program 2000 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, September 25-26.

Conference Paper(Plenary)

195. 2000 Y. Betser, D. Mensa, M.J.Rodwell, “High Ft and F max InAIAs/InGaAs Transferred-Substrate HBTs.” Digest

58th Device Research Conference, University of Denver, Denver, CO, June 19-21.

Conference Paper

196. 2001 S. Krishnan. M. Dahlström, T. Mathew, Y. Wei, D. Scott, M. Urteaga andM.J.W. Rodwell, “InP/InGaAs/InP Double Heterojunction Bipolar Transistors with 300 GHz fmax.” Support:N00014-01-1-0066 Digest

13th International Conference on InP and Related Materials, Nara, Japan, May 14-18.

Conference Paper

197. 2001 T. Mathew, S. Jaganathan, D. Scott,S. Krishnan, Y. Wei, M. Urteaga,M.J.W. Rodwell and S. Long, “2 Bit Adder Carry and Sum Logic Circuits Clocking at 19 GHz Clock Frequency in Transferred Substrate HBT Technology.” Support:ONR-97: N0014-98-1-0068 Digest


Conference Paper

198. 2001 D. Lubyshev, Y. Wu, X.-M. Fang, T. Yurasits, W.K. Liu and A.B. Cornfeld, D. Mensa,S. Jaganathan, R. Pullela, M. Dahlström,P.K. Sundararajan. T. Mathew andM.J.W. Rodwell, “MBE Growth of Large


Conference Paper

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Diameter InP-based Lattice-matched and Metamorphic HBTs.” Digest

199. 2001 M. Urteaga, D. Scott, T. Mathew, S. Krishnan, Y. Wei and M.J.W. Rodwell, “185 GHz Monolithic Amplifier in InGaAs/InA1As Transferred-Substrate HBT Technology.” Support:F49620-99-1-0079, N0014-99-1-0041 Digest Viewgraphs

IEEE MTT-S 2001 International Microwave Symposium Digest, Vol. 3 pp. 1713-1716, Phoenix Civic Center, Phoenix, AZ

Conference Paper

200. 2001 M. Urteaga, D. Scott, M. Dahlström, Y. Betser, S. Lee, S. Krishnan, T. Mathew. S. Jaganathan. Y. Wei, M.J.W. Rodwell, “Ultra High Speed Heterojunction Bipolar Transistor Technology.” Support:N0014-99-1-0041, N00014-01-1-0065N00014-01-1-0066, N00014-01-1-0024N00014-98-1-0750, N00014-98-1-0830F4962096-1-0019, PC249806 Digest Viewgraphs

2001 GOMAC Conference, San Antonio, Texas, March 5-8.

Conference Paper (Invited)

201. 2001 S. Lee, H. J. Kim, M. Urteaga, S. Krishnan, Y. Wei, M. Dahlström and M. Rodwell, “Transferred-Substrate InP/InGaAs/InP Double Heterojunction Bipolar Transistors with fmax=425 GHz.” Support:N00014-01-1-0066 Digest

GaAs IC symposium, Baltimore, Maryland, October 21-24.

Conference Paper

202. 2001 M.J.W. Rodwell, M. Urteaga, Y. Betser, D. Scott, M. Dahlström, S. Lee, S. Krishnan, T. Mathew. S. Jaganathan. Y. Wei, D. Mensa, J. Guthrie, R. Pullela, Q. Lee, B. Agarwal, U. Bhattacharya, S. Long “Scaling of InGaAs/InAIAs HBTs for High Speed Mixed-Signal and mm-Wave ICs” Support:N0014-99-1-0041, N00014-01-1-0065N00014-01-1-0066, N00014-01-1-0024N00014-98-1-0750, N00014-98-1-0830F4962096-1-0019, PC249806 Publication

International Journal of High Speed Electronics and Systems, Vol. 11, No. 1, pp. 159-215.

Journal Paper

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203. 2001 M. Urteaga, D. Scott, T. Mathew, S. Krishnan,

Y. Wei, M. Rodwell “Single-stage G-band HBT Amplifier with 6.3 dB Gain at 175 GHz” Support:N0014-99-1-004, F49620-99-1-0079 Digest Viewgraphs

GaAs IC Symposium, Baltimore, Maryland, October 21-24.

Conference Paper

204. 2001 M. Urteaga, D. Scott, T. Mathew, S. Krishnan, Y. Wei, M. Dahlström, M. Rodwell, “Characteristics of Submicron HBTs in the 140-220 GHz Band” Support:N0014-99-1-0041

Digest Viewgraphs

2001 Device Research Conference, University of Notre Dame, Notre Dame, IN, June 25-27.

Conference Paper

205. 2001 T. Mathew, H.J. Kim, D. Scott, S. Jaganathan, S. Krishnan, Y. Wei, M. Urteaga, S. Long, M. J. W. Rodwell. “75 GHz ECL Static Frequency Divider in InAlAs/InGaAs Transferred Substrate HBT Technology.” Support:N00014-01-1-0024 Digest

IEEE Indium Phosphide and Related Materials (IPRM) conference, Nara, Japan, May.

Conference Paper

206. 2001 S. Jaganathan, S. Krishnan, D. Mensa, T. Mathew, Y.Betser, Y. Wei, D. Scott, M. Urteaga, M. Rodwell. “An 18 GHz continuous time sigma-delta analog-digital converter implemented in InP transferred substrate HBT technology” Support:N00014-98-1-0830 Publication

IEEE Journal of Solid State Circuits, Vol. 36, No. 9, pp. 1343-1350, September.

Journal Paper

207. 2001 S. Lee, H. J. Kim, M. Urteaga, S. Krishnan, Y. Wei, M. Dahlström and M. Rodwell, “Transferred-Substrate InP/InGaAs/InP Double Heterojunction Bipolar Transistors with fmax=425 GHz” Support:N00014-01-1-0066 Publication

IEE Electronics Letters, Vol. 37, No. 17, pp. 1096-1098, August 16.

Journal Paper

208. 2001 M. Rodwell, S. Long, M. Urteaga, T. Mathew, 28th International Symposium Conference Paper33

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D. Scott, S. Lee, Y. M. Kim, Y. Wei, N. Parthasarathy, M. Dahlström, H.J. Kim, Z. Griffith, “High Speed InP-Based Heterojunction Bipolar Transistors.” Support:N0014-99-1-0041, N00014-01-1-0065N00014-01-1-0066, N00014-01-1-0024N00014-98-1-0750, N00014-98-1-0830F4962096-1-0019, PC249806 Digest Viewgraphs

on Compound Semiconductors 2001 (ISCS2001), Komaba Campus, University of Tokyo, October 1-4.

(Invited)

209. 2001 T. Mathew, H.J. Kim, S. Jaganathan, D. Scott, S. Krishnan, Y. Wei, M. Urteaga, M.J.W. Rodwell and S. Long, “75 GHz ECL Static Frequency Divider Using InAIAs/InGaAs HBTs.” Support:N00014-01-1-0024 Publication

IEE Electronic Letters, Vol. 37, No. 11, pg. 667-8, 24 May.

Journal Paper

210. 2001 McCarthy, L.; Smorchkova, I.; Xing, H.; Fini, P.; Keller, S.; Speck, J.; DenBaars, S.P.; Rodwell, M.J.W.; Mishra, U.K. “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors.” Publication

Applied Physics Letters, Vol. 78, No.15, AIP, p.2235-7, 9 April.

Journal Paper

211. 2001 McCarthy, L.S.; Smorchkova, I.P.; Huili Xing; Kozodoy, P.; Fini, P.; Limb, J.; Pulfrey, D.L.; Speck, J.S.; Rodwell, M.J.W.; DenBaars, S.P.; Mishra, U.K. “GaN HBT: toward an RF device.” Publication

IEEE Transactions on Electron Devices, Vol. 48, No. 3, p.543-51, March.

Journal Paper

212. 2000 McCarthy, L., Smorchkova, Y., Fini, P., Xing, H., Rodwell, M., Speck, J., DenBaars, S., Mishra, U. “ HBT on LEO GaN.” Digest

58th Device Research Conference, Denver, CO, 19-21 June.

Conference Paper

213. 2001 Mark J.W. Rodwell, Miguel Urteaga, Thomas Mathew, Dennis Scott, Dino Mensa, Q. Lee, James Guthrie, Y. Betser, Suzanne C. Martin, R.P. Smith, S. Jaganathan, Sundararajan Krishnan, Stephen I. Long, R. Pullela, B. Agarwal, Uddalak Bhattacharya, Lorene Samoska, and Mattias Dahlström. “Submicron Scaling of HBTs.” Support:N0014-99-1-0041, N00014-01-1-0065

IEEE Transactions on Electron Devices, Special Issue on the History of the Bipolar Junction Transistor, Vol. 48, No. 11, p. 2606-2624, November.

Journal Paper(Invited)

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N00014-01-1-0066, N00014-01-1-0024N00014-98-1-0750, N00014-98-1-0830F4962096-1-0019, PC249806 Publication

214. 2001 Y.M. Kim, M. Dahlström, S. Lee, M.J.W. Rodwell, A.C. Gossard. “InP/In0.53Ga0.47As/InP Double Heterojunction Bipolar Transistors on GaAs Substrate Using InP Metamorphic Buffer Layer.” Support:N00014-01-1-0065 Digest Publication Kim_ISDRS_2003_slides.ppt

2001 International Semiconductor Device Research Symposium, Washington, D.C., December 5-7.Also published in:Solid-State Electronics, Vol. 46, pp. 1541-1544, January 17.

Conference Paper

Journal Paper

215. 2001 Y.M. Kim, M. J. W. Rodwell, A. C. Gossard, “Thermal characteristics of InP, InAlAs, and AlGaAsSb metamorphic buffer layers used in In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates” Support:N00014-01-1-0065 Publication

Journal of Electronic Materials, Vol. 31, No. 3, p. 196-199, March.

Journal Paper

216. 2002 Y.M. Kim, M. Dahlström, S. Lee, M.J.W. Rodwell, A.C. Gossard,“High-Performance InP/In0.53Ga0.47As/InP Double Heterojunction BipolarTransistors on GaAs Substrates.” Publication

IEEE Electron Device Letters, Vol.23, No.6, pp.297-299, June.

Journal Paper

217. 2002 Y.M. Kim, M. Dahlström, S. Lee, Y. Wei, M.J.W. Rodwell, A.C. Gossard, “High Speed (207 GHz fτ), Low Thermal Resistance, High Current Density Metamorphic InP/InGaAs/InP DHBTs grown on a GaAs Substrate.” Digest

KimIPRM_2002_presentation.ppt

Indium Phosphide and Related Materials Conference, Stockholm, Sweden, May 12-16.

ConferencePaper

218. 2002 Y.M. Kim, M. Dahlström, M.J.W. Rodwell, A.C. Gossard, “Thermal Performance of Metamorphic Double Heterojunction Bipolar Transistors with InP and InAlP Buffer Layers.” Digest

IEEE Device Research Conference, Santa Barbara, CA, June 24-26.

ConferencePaper

219. 2002 M. Dahlström, M. Urteaga, S. Krishnan, N. Indium Phosphide and Related Conference35

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Parthasarathy, M.J.W. Rodwell, X. M. Fang, D. Lubyshev, Y. Wu, J. M. Fastenau, W.K. Liu, “Ultra-Wideband DHBTs using a Graded Carbon-Doped InGaAs Base” Digest Viewgraphs

Materials Conference, Stockholm, Sweden, May 12-16.

Paper

220. 2002 S. Krishnan, Z. Griffith, M. Urteaga, Y. Wei, D. Scott, M. Dahlström, N. Parthasarathy, M. J. W. Rodwell, “87 GHz Static Frequency Dividers in an InP-based Mesa DHBT Technology.” Support:N00014-01-1-0024 Digest Viewgraphs

GaAs IC Symposium, Monterey, CA, October 21-23.

ConferencePaper

221. 2002 M. Urteaga, D. Scott, S. Krishnan, Y. Wei, M. Dahlström, Z. Griffith, N. Parthasarathy, M.J.W. Rodwell, “Multi-stage G-band (140-220 GHz) InP HBT Amplifiers.” Support:N0014-99-1-004F49620-99-1-0079 Digest Viewgraphs

GaAs IC Symposium, Monterey, CA, October 21-23.

ConferencePaper

222. 2002 B. Brar, G. Nagy, J. Bergman, G. Sullivan, R. Rodwell, H.K. Lin, M. Dahlström, C. Kadow, M. Rodwell, “RF and DC characteristics of low-leakage InAs/AlSb HFETs.” Digest

Lester Eastman Conference, University of Delaware, August 6-8.

Conference Paper

223. 2001 Mark Rodwell, “Transistors for Fast Logic Circuits: What We Have Learned from InP-Based HBT’s.” Viewgraphs

Third Workshop on the Fabrication, Characterization, and Applications of 6.1Å III-V Semiconductors, Snowbird, Utah, July 31-August 2.

ConferencePaper

224. 2002 S. Lee, M. Urteaga, Y. Wei, Y. Kim, M. Dahlström, S. Krishnan, and M. Rodwell, “Ultra High fmax InP/InGaAs/InP Transferred Substrate DHBTs.” Support:N00014-01-1-0066 Digest

IEEE Device Research Conference, Santa Barbara, CA, June 24-26.

Conference Paper

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225. 2002 Vamsi Paidi, Shouxuan Xie, Robert Coffie, Umesh Mishra, Stephen Long, and M.J.W. Rodwell, “Simulations of High linearity and high efficiency of Class B Power Amplifiers in GaN HEMT Technology.” Support:N00014-00-1-0653 Digest

Lester Eastman Conference, University of Delaware, Newark, Delaware, August 6-8.

Conference Paper

226. 2002 D. Scott, M. Urteaga, N. Parthasarathy, J.H. English, and M. Rodwell, “Molecular Beam Deposition of Low-Resistance Polycrystalline InAs.” Support:N0014-99-1-0041 Digest

Lester Eastman Conference, University of Delaware, Newark, Delaware, August 6-8.

Conference Paper

227. 2002 D. Scott, H. Xing, S. Krishnan, M. Urteaga, N. Parthasarathy and M. Rodwell, “InAlAs/InGaAs/InP DHBTs with Polycrystalline InAs Extrinsic Emitter Regrowth.” Digest Viewgraphs

2002 IEEE Device Research Conference, Santa Barbara, CA, June 24-26.

Conference Paper

228. 2002 Mark Rodwell, "InP-based HBTs: Devices and GHz mixed-signal ICs." Viewgraphs

2002 IEEE/OSA Conference on Indium Phosphide and Related Materials, Stockholm, Sweden, May 12-16.

ConferenceShort Course

229. 2002 Mark Rodwell, “Beyond 40 GHz:Chips to be tested, Instruments to measure them,” “Presentation within the workshop Ultrahigh Speed Microwave and Photonic Devices and Systems: How Will They Be Tested?” Viewgraphs

2002 IEEE MTT-S International Microwave Symposium, Seattle, WA, June 2-7.

Conference WorkshopPresentation

230. 2002 M. J. W. Rodwell, S. Krishnan, M. Urteaga, Z. Griffith, M. Dahlström, Y. Wei, D. Scott, N. Parthasarathy, Y-M Kim, S. Lee, “Interconnects in 50-100 ghz integrated circuits.” Support:N00014-01-1-0066, N00014-01-1-0024, N00014-01-1-0065, N0014-99-1-0041, N00014-98-1-0830, F49620-99-1-0079, PC249806, SB010053, 00-10076 Digest

International Union of Radio Sciences, General Assembly, Maastricht, August 18-24.


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MARK RODWELL


Viewgraphs

231. 2002 M. J. W. Rodwell, M. Urteaga, M. Dahlström, S. Krishnan, Z. Griffith, Y. Wei, D. Scott, N. Parthasarathy, Y-M Kim, S. Lee “50-200 GHz InP HBT Integrated Circuits for Optical Fiber and mm-Wave Communications.” Digest Viewgraphs

2002 European Conference on Optical Communication, Copenhagen, September 9-12.


232. 2002 M.J.W. Rodwell, D. Scott, M. Urteaga, M. Dahlström, S. Krishnan, Z. Griffith, Y. Wei, N. Parthasarathy, Y.M. Kim, "Sibmicron InP Bipolar Transistors: Scaling Laws, Technology Roadmaps, Advanced Fabrication Processes." Digest Viewgraphs

2002 International Conference on Solid State Devices and Materials, Nagoya, Japan, September 17-20.


233. 2002 X. -M. Fang, *, Y. Wu, C. Doss, D. Lubyshev, J.M. Fastenau, and W.K. Liu, Y.M. Kim and M.J.W. Rodwell, “Metamorphic Buffer Comparisons for M-HBT Grown by MBE.” Digest

CS-MAX, San Jose, CA, November 11-13.

Conference Paper

234. 2002 Yun Wei, Sangmin Lee, Krishnan Sundararajan, Mattias Dahlström, Miguel Urteaga, Mark Rodwell, “W-band InP/InGaAs/InP DHBT MMIC Power Amplifiers.” Support:PC249806 Digest Viewgraphs

IEEE MTT-S International Microwave Symposium, Seattle, WA, June 2-7.

ConferencePaper

235. 2002 Yun Wei, Sangmin Lee, P.K. Sundararajan, Mattias Dahlström, Miguel Urteaga, Mark Rodwell, “High current (100mA) InP/InGaAs/InP DHBTs with 330 GHz fmax.” Support:PC249806 Digest Viewgraphs

Indium Phosphide and Related Materials Conference, Stockholm, Sweden, May 12-16.

ConferencePaper

236. 2002 Yun Wei, Krishnan Sundararajan, Miguel Urteaga, Zach Griffith, Dennis Scott, Vamsi Paidi, Navin Parthasarathy, Mark Rodwell, “40 GHz MMIC Power Amplifier in InP DHBT Technology.”

IEEE Lester Eastman Conference on High Performance Devices, Newark, Delaware, August 6-8.

ConferencePaper

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Support:PC249806 Digest Viewgraphs

237. 2002 Y.M. Kim, M. Urteaga, M.J.W. Rodwell, A.C. Gossard, “High Speed, Low Leakage Current InP/In0.53Ga0.47As/InP Metamorphic Double Heterojunction Bipolar Transistors.” Support:NOO14-01-1-0065 Publication

Electronics Letters, Vol. 38, No. 21, pp. 1288-1289, October 10.

Journal Paper

238. 2002 C. Kadow, H.-K. Lin, M. Dahlström, M. Rodwell, A.C. Gossard, B. Brar, G. Sullivan, “Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wells.” Support:N66001-01-C-8032 Digest Publication kadown_MBE_sept2002_slides.ppt

MBE XII Conference, San Francisco, CA, September 15-20. Also published in:Journal of Crystal Growth,Vol. 251, pp. 534-546.

Conference Paper

Journal Paper

239. 2003 Vamsi Paidi, Shouxuan Xie, Robert Coffie, Brendan Moran, Sten Heikman, Stacia Keller, Alessandro Chini, Steven P. DenBaars, Umesh K. Mishra, Stephen Long and Mark J.W. Rodwell, “High Linearity and High Efficiency of Class B Power Amplifiers in GaN HEMT Technology.” Publication

IEEE Transactions on Microwave Theory and Techniques, Vol. 51, No. 2, pp. 643-652, February.

Journal Paper

240. 2003 K. Krishnamurthy, R. Pullela, J. Chow, J. Xu, S. Jaganathan, D. Mensa, Mark Rodwell, “High Gain 40 Gb/s InP HBT Drivers for EO/ EA Modulators.” Digest

Optical Fiber Conference, Atlanta, GA, March 23-28.

Conference Paper

241. 2003 R. Vetury, I. Gontijo, Yet-zen Liu, K. Krishnamurthy, R. Pullela and M. J. Rodwell, “High sensitivity and wide-dynamic-range optical receiver for 40Gbits/s optical communication networks.” Publication

Electronics Letters, Vol. 39, No. 1, pp. 91-92, January 9.

Journal Paper

242. 2003 Mark Rodwell, “Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond.”

IEEE International Solid-State Circuits Conference, San

Conference Paper

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MARK RODWELL


Digest Viewgraphs

Francisco, CA, February 9-13.

243. 2003 Yingda Dong, Dennis Scott, Yun Wei, Arthur Gossard, Mark Rodwell, “Molecular Beam Epitaxy of Low-Resistance Polycrystalline P-type GaSb.” Digest Viewgraphs

Indium Phosphide and Related Materials, Santa Barbara, CA, May 12-16.

Conference Paper

244. 2003 Yun Wei, Miguel Urteaga, Zach Griffith, Dennis Scott, Shouxuan Xie, Vamsi Paidi, Navin Parthasarathy, Mark Rodwell, “75 GHz, 80 mW InP DHBT Power Amplifier.” Support:PC249806 Digest Viewgraphs

IEEE Radio Frequency Integrated Circuits Symposium, Technical Digest, pp. 919-921. Philadelphia, PA, June 8-13.

Conference Paper

245. 2003 Y.M.Kim, M.Urteaga, M. Dahlström, M.J.W.Rodwell, A.C.Gossard, "200 GHz fmax, ft InP/In0.53Ga0.47As/InP Metamorphic Double Heterojunction Bipolar Transistors on GaAs Substrates." Digest Viewgraphs

Indium Phosphide and Related Materials, Santa Barbara, CA, May 12-16.

Conference Paper

246. 2003

S. Krishnan, D. Scott, M. Urteaga, Z. Griffith, Y. Wei, M. Dahlström, N. Parthasarathy, M. Rodwell, “An 8-GHz Continuous-Time Sigma-Delta Analog-Digital Converter in an InP-based DHBT Technology.” Digest Viewgraphs

International Microwave Symposium, Technical Digest, pp. 1063-1065, Philadelphia, June 8-10.

Conference Paper

247. 2003 K. Krishnamurthy, R. Vetury, J. Xu, A. Shou, S. Jaganathan, K. Cheng, J. Chow, D. Mensa, L. Zhang, I. Gontijo, S. Vu, C. Winczewski, Y-Z. Liu, R. Pullela, M. Rodwell, “40 Gb/s TDM System Using InP HBT IC Technology.” Digest

IEEE International Microwave Symposium, Technical Digest, pp. 1189-1192, Philadelphia, PA, June 8-13.

Conference Paper

248. 2003 Yingda Dong, Dennis W. Scott, Arthur C. Gossard, and Mark J.W. Rodwell, “Characterization of Contact Resistivity on InAs/GaSb Interface.”

Electronic Materials Conference, Salt Lake City, Utah, June 25-27.

Conference Paper

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Digest Viewgraphs

249. 2003 J. Bergman, G. Nagy, G. Sullivan, and B. Brar, C. Kadow, H.-K. Lin, A. Gossard, and M. Rodwell, “RF Noise Performance of Low Power InAs/AlSb HFETs.” Digest

IEEE Device Research Conference, Salt Lake City, UT, June 23-25.

Conference Paper

250. 2003 B. Brar, J. Bergman, R. Pierson, P. Rowell, G. Nagy, and G. Sullivan, C. Kadow, H. K. Lin, A. Gossard, and M. Rodwell, “Low-Voltage AlGaSb/InAs/AlGaSb PnP HBTs.” Digest


Conference Paper

251. 2003 H.-K. Lin*, C. Kadow, M. Dahlström, J.-U. Bae, M. Rodwell, A.C. Gossard, B. Brar, G. Sullivan, G. Nagy, J. Bergman, “AlSb/InAs/InAsP/AlSb Composite-Channel HFETs.” Digest Viewgraphs


Conference Paper

252. 2003 J. Bergman, G. Nagy, G. Sullivan, and B. Brar, C. Kadow, H.-K. Lin, A. Gossard, and M. Rodwell, “InAs/AlSb HFETs with fτ and fmax Above 150 GHz for LowpowerMMICs.” Digest

Indium Phosphide and Related Materials, Technical Digest, pp. 219-222, Santa Barbara, CA, May 12-16.

Conference Paper

253. 2003 M. Dahlström, Z. Griffith, M. Urteaga, M.J.W. Rodwell, X-M. Feng, D. Lubyshev, Y. Wu, J.M. Fastenau, W.K. Liu, “InGaAs/InP DHBT’s with > 370 GHz ft and fmax using a Graded Carbon-Doped Base.” Digest Viewgraphs


Conference Paper

254. 2002 I.Harrison, M. Dahlström, S. Krishnan, Z. Griffith, Y.M Kim, M.J.W. Rodwell,“Thermal limitations of InP HBTs in 80 and 160Gbit integrated circuits.” Support:SB010053, 00-10076 Digest Viewgraphs

Indium Phosphide and Related Materials, Technical Digest, pp. 160-163, Santa Barbara, CA, May 12-16.

Conference Paper

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255. 2002 M. Urteaga, D. Scott, S. Krishnan, Y. Wei, M.

Dahlström, Z. Griffith, N. Parthasarathy and M.J.W. Rodwell, “G-band (140-220 GHz) InP-based HBT amplifiers.”

urteaga_JSSC_sep_2003_journal.pdf

IEEE Journal of Solid State Circuit, Volume: 38 , Issue: 9 , Sept. 2003, Pages:1451 - 1456.

Journal Paper

256. 2002 Y.M.Kim, M. Dahlström, M.J.W. Rodwell, A.C.Gossard, “Thermal Properties of Metamorphic Buffer Materials for Growth of InP Double Heterojunction Bipolar Transistors on GaAs Substrates”

Kim_TED_May2003_journal.pdf

IEEE Transactions on Electron Devices Volume: 50 , Issue: 5 , May 2003Pages:1411 - 1413

Journal Paper

257. 2003 M.Urteaga, S.Krishnan, D.Scott, Y.Wei, M.Dahlström, S.Lee, M.J.W.Rodwell, “Submicron InP -based HBTs for Ultra-high Frequency Amplifiers.”urteaga_IJHSES_2003_journal.pdf

International Journal of High Speed Electronics and Systems, Vol. 13, No. 2 (June 2003)

Special issue on terahertz sensing technologyVol 1: Electronic devices & advanced systems technologyEdited by D. L. Woolard, W. R. Loerop and M. S. Shur

Journal Paper (invited)

258. 2002 S. Xie, V. Paidi, R. Coffie, S. Keller, S. Heikman, B. Moran, A. Chini, S. DenBaars, U. Mishra, S. Long, M.J.W. Rodwell, “High linearity Class B Power Amplifiers in GaN HEMT Technology.”Xie_MWGWL_July2003_journal.pdf

IEEE Microwave and Wireless Components LettersVolume: 13 , Issue: 7 , July 2003Pages:284 - 286

Journal Paper

259. 2003 M. Urteaga, M.J.W. Rodwell, “Power gain singularities in transferred-substrate InA1As/InGaAs HBT’s.”urteaga_TEDJuly2003.pdf

IEEE Transactions on Electronic DevicesVolume: 50 , Issue: 7 , July 2003, Pages:1589 - 1598

Journal Paper

260. 2003 Y. Dong, D.W. Scott, Y. Wei, A.C. Gossard, and M.J.W. Rodwell, "Low-Resistance P-type Polycrystalline GaSb grown by Molecular Beam Epitaxy."dong_JCG_sept2004.pdf

Journal of Crystal GrowthVolume 256, Issues 3-4, Pages 223-229 (September 2003)

Journal Paper

261. 2003 Y.M.Kim, K. Lai, M.J.W.Rodwell, A.C.Gossard, “Low Turn-On Voltage InP/In0.7Ga0.3As/InP Double Heterojunction Bipolar Transistors.”Kim_ISCS_2003_digest.pdf

International Symposium on Compound Semiconductors, San Diego, CA, August 25-27.Pages:203 - 204

Conference Paper

262. 2003 M. Dahlström, X.-M. Fang, D. Lubyshev, M. Urteaga, S. Krishnan, N. Parthasarathy, Y.M. Kim Y. Wu, J.M. Fastenau, W.K. Liu, and M.J.W. Rodwell, “Wideband DHBTs using a Graded Carbon-Doped InGaAs Base.” dahlstrom_EDL_2003_journal.pdf

Electron Device Letters, IEEE , Volume: 24 , Issue: 7 , July 2003 Pages:433 - 435

Journal Paper

263. 2003 S. Krishnan, D. Scott, Z. Griffith, M. Urteaga, IEEE Transactions on Journal Paper

42

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Y. Wei, N. Parthasarathy, M. Rodwell, “An 8 GHz continuous time ∑-∆ analog-digital Converter in an InP-based HBT Technology.”krishnan_TMTT_dec2003_journal.pdf

Microwave Theory and Techniques, Volume: 51 , Issue: 12 , Dec. 2003Pages:2555 - 2561

264. 2003 M. Rodwell, D. Scott, M. Urteaga, M. Dahlström, Z. Griffith, Y. Wei, N. Parthasarathy, YM Kim, R. Pierson, P. Rowell, B. Brar, “InP Bipolar Transistors: High Speed Circuits and Manufacturable Submicron Fabrication Processes.”rodwell_eugaasic_nov_2003_digest.pdfrodwell_EuGaAsIC_nov_2003slides.ppt

European Gallium Arsenide and Other Compound Semiconductors ApplicationSymposium, 6 - 7 October, Munich

Conference Paper (Invited)

______ _____ ______________________________ __________________ _________________

265. 2002 Liyang Zhang, R. Pullela, C. Winczewski, J. Chow, D. Mensa, S. Jaganathan, Ruai Yu, "A 37~50 GHz InP HBT VCO IC for OC-768 fiber optic communication applications"Zhang_RFIC_2002journal.pdf

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2-4 June Pages:85 - 88

Conference Paper

266. 2002 Shouxuan Xie, Vamsi Paidi, Robert Coffie, Stacia Keller, Sten Heikman, Alessandro Chini, Umesh Mishra, Stephen Long and Mark J. W. Rodwell. "High linearity Class B Power Amplifiers in GaN HEMT Technology"Xie_san_diego_workshop_2002.pdf

IEEE Topical Workshop onPower Amplifiers for Wireless Communications, September 2002, San Diego, CA

Workshop Paper

267. 2003 K. Krishnamurthy, J. Chow, M.J.W. Rodwell, R. Pullela, "0.1-42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output"Krishnamuthy_Elett_Oct2003paper.pdf

Electronics Letters , Volume: 39 , Issue: 22 , 30 Oct. 2003Pages:1594 - 1595

Journal Paper

268. 2003 K. Krishnamurthy, R. Vetury, Yet-zen Liu; M.J.W. Rodwell, R. Pullela, "40 Gbit/s optical receiver module with high conversion gain and sensitivity"Krishnamuthy_Elett_Nov2003paper.pdf

Electronics Letters , Volume: 39 , Issue: 24 , 27 Nov. 2003Pages:1738 - 1739

Journal Paper

269. 2003 Yingda Dong; Yun Wei; Z. Griffith, M. Urteaga, M. Dahlstrom, M. J.W. Rodwell, "InP heterojunction bipolar transistor with a selectively implanted collector pedestal"

dong_ISDRS_dec_2003digest.pdf

International Semiconductor Device Research Symposium, 2003 10-12 Dec. 2003Pages:348 - 349

Conference Paper

270. 2004 H.-K. Lin, C. Kadow, M. Dahlström, J.-U. Bae, M. J. W. Rodwell, A. C. Gossard, B. Brar, G. Sullivan, G. Nagy, and J. Bergman, "InAs/InAsP composite channels for antimonide-based field-effect transistors "Lin_Apl_jan2004_journal.pdf ***

Applied Physics Letters Vol 84(3) pp. 437-439. January 19, 2004

Journal Paper

271. 2004 H. Shigematsu, M. Sato, I. Hirose, F. Brewer, M. Rodwell, M.;"40Gb/s CMOS distributed amplifier for fiber-optic communication systems"shigematsu_ISSCC_feb2004digest.pdf

2004 IEEE International Solid-State Circuits Conference, Digest of Technical Papers. ISSCC. , 15-19 Feb.Pages:476 - 540 Vol.1

Conference Paper

272. 2004 J.B. Hacker, J. Bergman, G. Nagy, G. Microwave and Wireless Journal Paper

43

MARK RODWELL


Sullivan,. C. Kadow, Heng-Kuang Lin. A.C. Gossard, M. Rodwell, B. Brar, "An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier"hacker_MWCL_april2004.pdf

Components Letters, IEEE , Volume: 14 , Issue: 4 , April 2004 Pages:156 - 158

273. 2004 I Harrison, M. Dahlstrom, M. Krishnan, Z Griffith, Y.M. Kim, M.J.W. Rodwell, "Thermal limitations of InP HBTs in 80- and 160-gb ICs"

harrison_TED_April2004_journal.pdf

IEEE Transactions on Electron Devices, Volume: 51 , Issue: 4 , April 2004 Pages:529 - 534

Journal Paper

274. 2004 Y.M. Kim, Z. Griffith, M.J.W. Rodwell, A.C. Gossard, "High bandwidth and low-leakage current InP-In0.53Ga0.47As-InP DBHTs on GaAs substrates"kim_EDL_april2004journal.pdf

IEEE Electron Device Letters, Volume: 25 , Issue: 4 , April 2004Pages:170 - 172

Journal Paper

275. 2004 Dennis W. Scott, Christoph Kadow, Yingda Dong, Yun Wei, Arthur C. Gossard and M.J.W.Mark J. W. Rodwell "Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy" scott_JCG_june2004.pdf ***

Journal of Crystal GrowthVolume 267, Issues 1-2 , 15 June 2004, Pages 35-41

Journal Paper

276. 2004 Mattias Dahlström and Mark J.W. Rodwell, "Current Density Limits in InP DHBTs: Collector Current Spreading and Effective Electron Velocity"

Dahlstrom_IPRM2004_slides.pptDahlstrom_IPRM2004_Kirkeffect_digest.pdf

2004 IEEE International Conference on Indium Phosphide and Related Materials, May 31-June 4, Kagoshima, Japan.

Conference Paper

277. 2004 Mattias Dahlström, Zach Griffith,Young-Min Kim, Mark J.W. Rodwell, "High Current Density and High Power Density Operation of Ultra High Speed InP DHBTs "Dahlstrom_IPRM2004_thermal_digest.pdfDahlstrom_IPRM2004_other_slides.ppt


Conference Paper

278. 2004 Z. Griffith, M. Dahlström, M. Seo, and M.J.W. Rodwell, "Ultra high frequency static dividers in a narrow mesa InGaAs/InP DHBT technology"

griffith_IPRM2004_slides_divider.ppt

Griffith_IPRM2004_digest.pdf


Conference Paper

279. 2004 Z. Griffith, Y.M. Kim, M. Dahlström, A.C. Gossard and M.J.W. Rodwell, "Low leakage current metamorphic InGaAs/InP DHBTs with

and > 268 GHz grown on a GaAs substrate"griffith_IPRM2004_slides_mhbt.pptgriffith_IPRM2004_mhbt_digest.pdf


Conference Paper

280. 2004 M. Urteaga, R. Pierson, P. Rowell, B. Brar, Z. 2004 IEEE International Conference Paper

44

MARK RODWELL


Griffith, M. Dahlström, M.J.W. Rodwell, S. Lee, N. Nguyen, C. Nguyen "Wide Bandwidth InP DHBT Technology Utilizing Dielectric Sidewall Spacers" urteaga_IPRM_2004_digest.pdf

Conference on Indium Phosphide and Related Materials, May 31-June 4, Kagoshima, Japan.

281. 2004 Dennis Scott, Yun Wei, Miguel Urteaga, and Mark J.W. Rodwell, "RF performance and process development of InPDHBTs using non-selective emitter regrowth"

scott_IPRM2004_regrowth_digest.pdf


Conference Paper

282. 2004 J. Fastenau, D. Lubyshev, X. Fang, C. Doss, Y. Wu, A. Liu, S. Bals, Z. Griffith, M. Rodwell"Strain Relaxation and Dislocation Filtering in Metamorphic HBT and HEMT Structures Grown on GaAs Substrates"

fastenau_IPRM_2004_digest.pdf


Conference Paper

283. 2004 Z. Griffith, M. Dahlström, M. Urteaga, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, W.K. Liu, "InGaAs/InP mesa DHBTs with simultaneously high ft and fmax, and low Ccb/Ic ratio"griffith_EDL_may_2004.pdf

IEEE Electron Device Letters, Volume: 25 , Issue: 5 , May 2004 Pages:250 - 252

Journal Paper

284. 2004 Yun Wei, D.W. Scott, Yingda Dong; A.C. Gossard, M. J. Rodwell, "A 160-GHz and 140-GHz submicrometer InP DHBT in MBE regrown-emitter technology" Wei_EDL_may2004journal.pdf

IEEE Electron Device Letters , Volume: 25 , Issue: 5 , May 2004 Pages:232 - 234

Journal Paper

285. 2004 V. Paidi, Z. Griffith, Y. Wei, M. Dahlstrom, N. Parthasarathy, M. Seo, M. Urteaga, M. J. W. Rodwell, L. Samoska, A. Fung, "Common Base Amplifier with 7- dB gain at 176 GHz in InP mesa DHBT Technology"paidi_RFIC_june_2004.pdfpaidi_RFIC_2004slides.ppt


Conference Paper

286. 2004 H. Shigematsu, T. Hirose, F. Brewer, M. Rodwell, M.;"CMOS circuit design for millimeter-wave applications"shigematsu_MTT_june2004digest.pdf


Conference Paper

287. 2004 Yun Wei, Dennis W. Scott, Yingda Dong, Arthur C. Gossard, Mark Rodwell "280 GHz

InP DHBT with 1.2 um2 base-emitter junction area in MBE Regrown-Emitter Technology"wei_DRC_2004_digest.pdfwei_DRC_2004slides.ppt

2004 IEEE Device Research Conference , June 21-23, Notre Dame, Illinois

Conference Paper

288. 2004 Yingda Dong, Zach Griffith, Mattias Dahlström, and Mark J.W. Rodwell, "Cbc Reduction in InP Heterojunction Bipolar Transistor with Selectively Implanted Collector


Conference Paper

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MARK RODWELL


Pedestal"dong_DRC2004_digest.pdf

289. 2004 M. Urteaga, P. Rowell, R. Pierson B. Brar, M. Dahlström, Z. Griffith and M.J.W. Rodwell, S. Lee, N. Nguyen and C. Nguyen, "Deep Submicron InP DHBT Technology with Electroplated Emitter and Base Contacts"Urteaga_DRC_2004_digest.pdf


Conference Paper

290. 2004 N. Parthasarathy, Y. Dong, D. Scott, M. Urteaga and M.J.W. Rodwell "Planar Device Isolation For InP Based DHBTs" Parthasarathy_DRC_2004_digest.pdf


Conference Paper

291. 2004 Joshua Bergman, Gabor Nagy, Gerard Sullivan, Amal Ikhlassi, Berinder Brar, Christoph Kadow, Heng-Kuang Lin, Art Gossard, and Mark Rodwell, "Low-voltage, high-performance InAs/AlSb HEMTs with power gain above 100 GHz at 100 mV drain bias"Bergman_DRC_2004_digest.pdf


Conference Paper

292. 2004 D. W. Scott, Yun Wei, Yingda Dong; A.C. Gossard, M. J. Rodwell, "A 183 GHz and 165 GHz regrown-emitter DHBT with abrupt InP emitter"scott_EDL_june2004journal.pdf

IEEE Electron Device Letters, Volume: 25 , Issue: 6 , June 2004 Pages:360 - 362

Journal Paper

293. 2004 Shouxuan Xie, Vamsi Paidi, Sten Heikman, Alessandro Chini, Umesh Mishra, Stephen Long and Mark J. W. Rodwell. "High linearity GaN HEMT power amplifier with pre-linearization gate diode"xie_LEC2004_digest.pdf

IEEE Lester Eastman Conference on High Performance Devices, August 4-6, 2004, Troy, NY

Conference Paper

294. 2004 Zach Griffith, Mattias Dahlström, Mark J.W. Rodwell, Miguel Urteaga, Richard Pierson, Petra Rowell, Sangmin Lee, Nguyen Nguyen, and Chanh Nguyen, "Ultra High Frequency Static Dividers > 150 GHz in a Narrow Mesa InGaAs/InP DHBT Technology"griffithBCTM2004_slides.pptGriffith_BCTM_2004digest.pdf

IEEE Bipolar / BiCMOS Circuits and Technology MeetingMonday-Tuesday September 13th-14th, 2004

Conference Paper

295. 2004 S. L. Morton, K. Elliott, M. Rodwell, "High resolution 20 GHz wideband delay generator"morton_elett_sept2004.pdf

Electronics Letters , Volume: 40 , Issue: 20 , 30 Sept. 2004Pages:1248 - 1249

Journal Paper

296. 2004 C. Kadow, A.C. Gossard, and M.J.W. Rodwell, "Regrown-Emitter InP HBTs"kadowNAMBE2004_pre.pdf

Late News Paper, 2nd North American Conference on Molecular Beam EpitaxyOctober 10th-14th, 2004Banff, Alberta, Canada

Proceedings to be published in

Conference Paper&Journal Paper (?)

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MARK RODWELL


Journal Vacuum Science and Technology, B

297. 2004 Z. Griffith, Y. Kim, M. Dahlstrom, A.C. Gossard, M.J.W. Rodwell, "InGaAs–InP Metamorphic DHBTs Grown on GaAs With Lattice-Matched Device Performance and ,

> 268 GHz"griffith_EDL_Oct_2004journal.pdf

IEEE Electron Device Letters, Volume: 25 , Issue: 10 , Oct. 2004Pages:675 - 677

Journal Paper

298. 2004 M. Rodwell, V. Paidi, Z. Griffith, D. Scott, Y. Dong, M. Dahlström, Y. Wei, N. Parthasarathy, Lorene Samoska, Andy Fung , M. Urteaga, R. Pierson , P. Rowell, B. Brar, "Transistor and Circuit Design for 100-200 GHz ICs"rodwell_CSIC_2004_digest.pptrodwell_CSIC_2004_slides.ppt

2004 IEEE Compound Semiconductor IC Symposium, October, Monterey

Invited Journal Paper

Work Accepted for Publication299. 2005 Z. Griffith, M. Dahlström, M. J.W. Rodwell,

X.-M. Fang, D. Lubyshev, Y. Wu, J. M. Fastenau, and W.K. Liu, "InGaAs/InP DHBTs for Increased Digital IC Bandwidth having a 391 GHz ft and 505 GHz fmax"griffith_EDL_jan_2004_pre.pdf

To be publishedIEEE Electron Device LettersJanuary 2005

Journal Paper

300. 2005 H-K. Lin, C. Kadow, A.C. Gossard, M. Rodwell, "InAs/InAlAscomposite-channel HFETs"

To be published, Applied Physics Letters, Jan. 15, 2005

Journal Paper

301. 2005 Vamsi K. Paidi, Zach Griffith, Yun Wei, Mattias Dahlstrom, Miguel Urteaga, Navin Parthasarathy, Munkyo Seo, Lorene Samoska, Andy Fung, Mark J. W. Rodwell,, "G-band (140-220-GHz) and W-band (75-110-GHz) InP DHBT Power Amplifiers"paidi_MTT2005_pre.pdf

To be published, IEEE Trans. Microwave Theory and Techniques

Journal Paper

Work Submitted for ReviewC. Kadow, M. Dahlström, J.-U. Bae, H.-K. Lin, A.C. Gossard and M.J.W. Rodwell, " n+-InAs/InAlAs recess gate technology for InAs-channel millimeter-wave HFETs"

Submitted to IEEE Transactions on Electron Devices.

Journal Paper

Munkyo Seo, Mark J. W. Rodwell, Upamanyu Madhow,"Comprehensive Digital Correction of Mismatch Errors for a 400-Msamples/s, 14-effective-bit Time-Interleaved Analog-to-Digital Converter"

Submitted to IEEE Transactions on Microwave Theory and Techniques

Journal Paper

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