We have a very complimentary set of Growth and Characterization Tools and Techniques. As well as a diverse set of laboratories that explore different aspects of materials behavior.

Facilities Overview and Lab Tour

• Outline of what you would see on a Facilities tour at OU• OU TEM Facility• E-Beam Facility• MBE Facility• Clean Room

• Tour of UA’s Facilites

9:40 – 9:45 Laser-Ablation MBE Facility Jak Chakhalian9:45 – 9:50 Quantum/Nonlinear Optics Lab Min Xiao9:50 – 9:55 Pump-Probe Optics Lab Dorel Guzun9:55 – 10:00 TEM Facility Mourad Benamara

10:00 – 10:05 MBE Growth and STM Imaging Facility Greg Salamo10:05 – 10:10 Fabrication Lab Greg Salamo

OU UA

Growth

MBE: III-Vs, InSb related IV-Vs and Ba/CaF2As and Sb valved crackerse-beam/gas handlingAES XPSAFM/STM

MBE: III-Vs; AlGaIn AsP; nitride; AlGaIn As; Ferroelectrics Atomic H and AsB3 sources e-beam -magnetic-films, Ion etcher AFM/STM: E-Field HeadLT STM/NSOMSTM / SEM / AES

Character-ization

SEM, UHV-XSTM, in-air AFM/STM, RT STM

Dual beam SEM-FIB, SQUID Magnetometer, NMRE-SEM, Confocal Microscope, RamanUV-Vis-IR Spectrophotometer

Common to both institutions

X-RAY: HRXD low-angle, Optical Microscopy, Hall Effect System, FTIR, PL, HR-TEM

Enabling

Transport: Dil./ 3He fridges, Spectroscopy: Cyclotron ResonancePL (0.2 - 5 m)UV-Vis Spectrophotometer

Transport: Dewars, probe stations,Spectrum AnalyzerSpectroscopy: CW/Pulse Lasers 0.4 to 16 m, time-resolved spectroscopy; Systems to enhance polarization, photon counting and UV capabilities

SPiFF: Fabrication for III-Vs Reactive ion etcher Mask AlignerBall, Wedge BonderNabity EBL

HiDEC:5"-Multichip Module Facility: wide range of fabrication/characterization techniquesMask AlignerBall BonderNabity EBL

Device/Fab. Specialist Optics Specialist

Facilities

Narrow Band-Gap MBE Facility

Gen II/ VeecoIII-V MBE

Group III: In, Al, and GaGroup V: Sb cracker, As crackerDopants: Si, Be

AFM/STM Chamber

Omicron UHV AFM/STM Mini E-Beam Deposition System

Analysis Chamber

Auger Electron SpectroscopyX-ray Photoelectron SpectroscopyAr Ion Sputtering

Gen II/ VeecoIV-VI MBE

CaF2 and BaF2

Group IV: PbTe, PbSe, SnSeGroup VI: Se crackerDopants: Ag, BiSe

Installed Field-Emission TEM: JEOL 2010F

Recently Recently installed installed JEOL JEOL 2010F TEM2010F TEM

This instrument greatly expands OU’s TEM capabilities

Si(110) Dumb Bells: Left, STEM image; Right, Filtered image of the red square area.

Resolution: 0.14 nm

COMPARISON 2000FXOld

2010FNew

HR-TEM resolutionTime consuming

>0.3 nm1.5 -3 hr

>0.2 nm10 -30min

STEM probe sizeEDS probe sizeEELS probe size

>2.0nm20 nm2 nm

>0.2 nm2.5nm0.5nm

EELS energy resolution

>1.5eV >0.7eV

Next week Next week we are we are having a state-of-having a state-of-the-art Oxford EDS the-art Oxford EDS Detector installed.Detector installed.

Electron Beam Lithography at OU

• Current System: Zeiss 960A– 25 kV operating voltage (30 kV max)– 8 pA current (W source)– Line widths of 100 nm

• 300 nm PMMA• 70 nm Cr liftoff

– NPGS (Nabity) pattern generation

Higher operating voltages, increased beam current and smaller spot size will improve our ultimate resolution.

• Installing: JEOL 840A– 40 kV max operating

voltage– 80 pA current (LaB6 source)– Line widths below 30 nm– High speed beam blanking– Complete by end of April.

Mask Aligner: Karl Suss MJB3• Line width down to 0.7 m• Soft samples, ideal for III-V materials• Photoresists: +ve S1818, AZ5214E with reversal;

-ve SU-8

Reactive Ion Etching: TRION-Minilock-II ICP-RIE • Gases Installed: SF6, CF4, CHF3, Ar, CH4, H2, O2,

and BCl3

• Heated sample holder• For general Silicon and III-V use, high-aspect ratio,

good selectivity

Deposition: (in nearby labs)• Multi-Hearth Edwards Thermal evaporator• 5-Hearth e-beam Evaporator• AJN and Two RF and DC Sputtering systems

Characterization• AMBIOS XP-2 profilometer (in clean room)• Gaertner Ellipsometer• Topometrics Explorer AFM

Photolithography Clean Room at OU

Clean Room: Fabrication and Characterization Projects

• Physics and Astronomy: - NanoArrays: Johnson- Flat Gold NanoParticles (FGNPs): Bumm- InSb Quantum-Well Structures: Santos and Murphy

• Electrical and Computer Engineering (ECE) - IV-VI Nanostructures and Devices: Shi and McCann- III-V Inter-band Cascade lasers: Yang- Nitride Devices: Kane

• Chemistry and Biochemistry- Nanomaterials, Biomaterials, Biomimetics and Biointerfaces: : Mao (OU,

Chemistry)- Polymer Deposition in Ordered Arrays of Nano-Pores: Glatzhofer, Frech (OU,

Chemistry)

• Chemical, Materials and Biological Engineering (CMBE)- Cell Adhesion & Rolling in the Cardiovascular System: Schmidtke- Growth of arrays of Single-Walled Carbon Nanotubes on Quartz: Resasco

• Aero-mechanical Engineering (AME)- Flame synthesized Nanoparticles: Merchan-Merchan- Nanocomposites and Composite Materials: Nano-clays: Saha