Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay...

57
Dr. Ahmed H. Madian-VLSI 1 Very Large Scale Integration (VLSI) Dr. Ahmed H. Madian [email protected] Lecture 4

Transcript of Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay...

Page 1: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Dr. Ahmed H. Madian-VLSI 1

Very Large Scale Integration (VLSI)

Dr. Ahmed H. Madian [email protected]

Lecture 4

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Dr. Ahmed H. Madian-VLSI 2

Contents

Delay estimation Simple RC model Penfield-Rubenstein Model Logical effort

Delay minimization techniques Transistor sizing Wiring sizing Distributed drivers Large driver

Wiring techniques

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Dr. Ahmed H. Madian-VLSI 3

Circuit characterization & performance

Resistance estimation

Capacitance estimation

Inductance estimation

Delay estimation Simple RC model

Penfield-Rubenstein Model

Delay minimization techniques Transistor sizing

Distributed drivers

Driving large loads

Wiring techniques

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Delay Estimation

How to estimate the delay for your layout?

1- use a simulator

2- Solve the differential equation to get the exact delay

3- model your circuit using one of the defined delay models like RC

Dr. Ahmed H. Madian-VLSI 4

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Dr. Ahmed H. Madian-VLSI 5

Signal Delay Time

Signal delay time is composed as follows Gate delay time

Interconnection delay time

due to minimization the delay times decreases

the output impedance of buffers increases, thus the importance of interconnection delays increases

So, signal delay time becomes less dependent on gate delay but more dependent on interconnection delay time

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4: DC and Transient Response 6

Elmore Delay

ON transistors look like resistors

Pull-up or pull-down network modeled as RC ladder

Elmore delay of RC ladder

R1

R2

R3

RN

C1

C2

C3

CN

nodes

1 1 1 2 2 1 2... ...

pd i to source i

i

N N

t R C

R C R R C R R R C

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Dr. Ahmed H. Madian-VLSI 7

Routing Delay estimation (cont.)

W

W

Ru

Cu Cu Cu CuCu Cu Cu

Ru Ru Ru Ru Ru Ru

Elmore Delay:

Rtotal = n RU

Ctotal = n CU

total = n2RU CU

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Dr. Ahmed H. Madian-VLSI 8

Delay Estimation

For MOSFET transistor,

N+ N+

G

D S

L

velocity

Ltransit

Velocity = µ.

Where µ = mobility and = electric filed = VDS/L

DDDStransit

V

L

L

V

L

2

For lower delay,

• VDD may be increased but we have limit of break down

• L may be decreased but there’s a problem with technology and

Resistance

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Dr. Ahmed H. Madian-VLSI 9

Delay estimation (cont.)

Equivalent circuit used for MOSFET

Ideal Switch + Capacitance and ON Resistance

Unit NMOS has resistance R, Capacitance C

Unit PMOS has resistance 2R, Capacitance C

Capacitance proportional to width

Resistance is inversely proportional to width

Define a model for delay based on the unit delay

Treat every MOSFET as resistance.

Lump intermediate node capacitance with load capacitance.

u = RS * CGate of min size transistor

G

R

Vin

Cg

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Dr. Ahmed H. Madian-VLSI 10

Simple RC model

VDD

Vin

VDD

2Cg2Cg

Vin

RP

Rn

RP

Rn

•Assume all pull –up /pull-down resistors are

summed as Rpu/Rpd and all capacitance are

summed in the output capacitance

RP = 2.5Rn

u = Rn Cg

inv1 = 2 RP Cg

inv1 = 5 Rn Cg

inv2 = 2 Rn Cg

Inverter pair delay = inv1+ inv2 = 7 Rn Cg

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Dr. Ahmed H. Madian-VLSI 11

Elmore Delay Model

Calculate the delays in generalized RC trees.

For a group of transistors in series (as in

NAND gate),

Where Ri is the summed resistance from

point i to power or ground and Ci is the

capacitance at point i.

Ex.: for 4 input NAND gate the fall time

will be,

a b c d

VDD

a

b

c

d

out

Cout

Cab

Cbc

Ccd

ii

id CRt

outNNNNabNNNbcNNcdNdf xCRRRRxCRRRxCRRxCRt 4321321211 )(

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Delay Components

Delay has two parts

Parasitic delay 6 or 7 RC

Independent of load

Effort delay 4h RC

Proportional to load capacitance

Dr. Ahmed H. Madian-VLSI 12

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Logical Effort

Chip designers face a bewildering array of choices

What is the best circuit topology for a function?

How many stages of logic give least delay?

How wide should the transistors be?

Logical effort is a method to make these decisions

Uses a simple model of delay

Allows back-of-the-envelope calculations

Helps make rapid comparisons between alternatives

Emphasizes remarkable symmetries

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Delay Plots

d = f + p

= gh + p

Electrical Effort:h = C

out / C

in

Norm

aliz

ed D

ela

y: d

Inverter

2-input

NAND

g = 1

p = 1

d = h + 1

g = 4/3

p = 2d = (4/3)h + 2

Effort Delay: f

Parasitic Delay: p

0 1 2 3 4 5

0

1

2

3

4

5

6

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Computing Logical Effort

DEF: Logical effort is the ratio of the input capacitance of a gate to the input capacitance of an inverter delivering the same output current.

Measure from delay vs. fanout plots

Or estimate by counting transistor widths

A YA

B

YA

BY

1

2

1 1

2 2

2

2

4

4

Cin = 3

g = 3/3

Cin = 4

g = 4/3

Cin = 5

g = 5/3

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Example: Ring Oscillator

Estimate the frequency of an N-stage ring oscillator

Logical Effort: g =

Electrical Effort: h =

Parasitic Delay: p =

Stage Delay: d =

Frequency: fosc =

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Example: Ring Oscillator Estimate the frequency of an N-stage ring oscillator

Logical Effort: g = 1

Electrical Effort: h = 1

Parasitic Delay: p = 1

Stage Delay: d = 2

Frequency: fosc = 1/(2*N*d) = 1/4N

31 stage ring oscillator in

0.6 m process has

frequency of ~ 200 MHz

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Example: FO4 Inverter

Estimate the delay of a fanout-of-4 (FO4) inverter

Logical Effort: g =

Electrical Effort: h =

Parasitic Delay: p =

Stage Delay: d =

d

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Example: FO4 Inverter

Estimate the delay of a fanout-of-4 (FO4) inverter

Logical Effort: g = 1

Electrical Effort: h = 4

Parasitic Delay: p = 1

Stage Delay: d = 5

d

The FO4 delay is about

200 ps in 0.6 m process

60 ps in a 180 nm process

f/3 ns in an f m process

Dr. Ahmed H. Madian-VLSI 19

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Multistage Logic Networks

Logical effort generalizes to multistage networks

Path Logical Effort

Path Electrical Effort

Path Effort

iG gout-path

in-path

CH

C

i i iF f g h

10x

y z20

g1 = 1h

1 = x/10

g2 = 5/3h

2 = y/x

g3 = 4/3h

3 = z/y

g4 = 1h

4 = 20/z

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Multistage Logic Networks

Logical effort generalizes to multistage networks

Path Logical Effort

Path Electrical Effort

Path Effort

Can we write F = GH?

iG g

out path

in path

CH

C

i i iF f g h

Dr. Ahmed H. Madian-VLSI 21

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Paths that Branch

No! Consider paths that branch:

G =

H =

GH =

h1 =

h2 =

F = GH?

5

15

1590

90

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Paths that Branch

No! Consider paths that branch:

G = 1

H = 90 / 5 = 18

GH = 18

h1 = (15 +15) / 5 = 6

h2 = 90 / 15 = 6

F = g1g2h1h2 = 36 = 2GH

5

15

1590

90

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Page 24: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Designing Fast Circuits

Delay is smallest when each stage bears same effort

Thus minimum delay of N stage path is

This is a key result of logical effort

Find fastest possible delay

Doesn’t require calculating gate sizes

i FD d D P

1ˆ N

i if g h F

1ND NF P

Dr. Ahmed H. Madian-VLSI 24

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Gate Sizes

How wide should the gates be for least delay?

Working backward, apply capacitance transformation to find input capacitance of each gate given load it drives.

Check work by verifying input cap spec is met.

ˆ

ˆ

out

in

i

i

C

C

i out

in

f gh g

g CC

f

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Page 26: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Example: 3-stage path

Select gate sizes x and y for least delay from A to B

8x

x

x

y

y

45

45

A

B

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Example: 3-stage path

Logical Effort G =

Electrical Effort H =

Branching Effort B =

Path Effort F =

Best Stage Effort

Parasitic Delay P =

Delay D =

8x

x

x

y

y

45

45

A

B

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Example: 3-stage path

Logical Effort G = (4/3)*(5/3)*(5/3) = 100/27

Electrical Effort H = 45/8

Branching Effort B = 3 * 2 = 6

Path Effort F = GBH = 125

Best Stage Effort

Parasitic Delay P = 2 + 3 + 2 = 7

Delay D = 3*5 + 7 = 22 = 4.4 FO4

8x

x

x

y

y

45

45

A

B

3ˆ 5f F

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Page 29: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Example: 3-stage path

Work backward for sizes

y =

x =

8x

x

x

y

y

45

45

A

B

Dr. Ahmed H. Madian-VLSI 29

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Example: 3-stage path

Work backward for sizes

y = 45 * (5/3) / 5 = 15

x = (15*2) * (5/3) / 5 = 10

P: 4

N: 4

45

45

A

BP: 4

N: 6P: 12

N: 3

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Best Number of Stages

How many stages should a path use?

Minimizing number of stages is not always fastest

Example: drive 64-bit datapath with unit inverter

D =

1 1 1 1

64 64 64 64

Initial Driver

Datapath Load

N:

f:

D:

1 2 3 4

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Best Number of Stages

How many stages should a path use?

Minimizing number of stages is not always fastest

Example: drive 64-bit datapath with unit inverter

D = NF1/N + P

= N(64)1/N + N

1 1 1 1

8 4

16 8

2.8

23

64 64 64 64

Initial Driver

Datapath Load

N:

f:

D:

1

64

65

2

8

18

3

4

15

4

2.8

15.3

Fastest

Dr. Ahmed H. Madian-VLSI 32

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Example: 2-input NAND

Estimate worst-case rising and falling delay of 2-input NAND driving h identical gates.

h copies

2

2

22

B

A

x

Y

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Example: 2-input NAND

Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

h copies

6C

2C2

2

22

4hC

B

A

x

Y

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Page 35: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Example: 2-input NAND

Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

h copies

6C

2C2

2

22

4hC

B

A

x

Y

R

(6+4h)CY

pdrt

Dr. Ahmed H. Madian-VLSI 35

Page 36: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Example: 2-input NAND

Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

h copies

6C

2C2

2

22

4hC

B

A

x

Y

R

(6+4h)CY 6 4pdrt h RC

Dr. Ahmed H. Madian-VLSI 36

Page 37: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Example: 2-input NAND

Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

h copies6C

2C2

2

22

4hC

B

A

x

Y

Dr. Ahmed H. Madian-VLSI 37

Page 38: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Example: 2-input NAND

Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

h copies6C

2C2

2

22

4hC

B

A

x

Y

pdft (6+4h)C2CR/2

R/2x Y

Dr. Ahmed H. Madian-VLSI 38

Page 39: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Example: 2-input NAND

Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

h copies6C

2C2

2

22

4hC

B

A

x

Y

2 2 22 6 4

7 4

R R Rpdft C h C

h RC

(6+4h)C2CR/2

R/2x Y

Dr. Ahmed H. Madian-VLSI 39

Page 40: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Delay Estimation (cont.)

Dr. Ahmed H. Madian-VLSI 40

3 input NAND gate with it’s gate and diffusion capacitances (assuming all nodes are contacted). Estimation at schematic levels will be different if you look at the layouts.

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Layout models

Dr. Ahmed H. Madian-VLSI 41

Good layout minimizes the diffusion area. 3 input NAND shown here, shares one diffusion contact, thus lowering the output capacitance by 2C. Contact diffusions are assumed.

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Dr. Ahmed H. Madian-VLSI 42

Body effect & delay

• If A goes from 0 to 1 while B, C and D are 1, then all the intermediate nodes in the pulldown chain have already been discharged and the top MOSFET sees only a small body effect.

• If D goes from 0 to 1 while A, B and C are 1,

then the intermediate nodes are all one Vt below Vdd and the upper MOSFETs see a larger body effect.

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Dr. Ahmed H. Madian-VLSI 43

Circuit characterization & performance

Delay estimation Simple RC model

Penfield-Rubenstein Model

Delay minimization techniques Transistor sizing

Wiring sizing

Distributed drivers

Driving large loads

Wiring techniques

Page 44: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Dr. Ahmed H. Madian-VLSI 44

Delay minimization techniques

a b c d

VDD

a

b

c

d

out

Cout

Cab

Cbc

Ccd

VDD

Vin Vout

2/1

1/1 Transistor sizing for minimum delay

Each Series transistors has

(W/L) = 3(W/L)basic inverter.

each parallel transistors has (W/L) = (W/L)basic inverter

Transistor sizing

Basic inverter

Page 45: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Wire sizing

Wire length is determined by layout architecture, but we can choose wire width to minimize delay.

width can vary with distance from driver to adjust the resistance which drives downstream capacitance.

Dr. Ahmed H. Madian-VLSI 45

Page 46: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Optimal wire sizing

Widening the wire reduces the resistance, but increases its capacitance.

Wire with minimum delay has an exponential taper.

Optimal tapering improves delay by about 8%.

Can approximate optimal tapering with a few rectangular segments.

Dr. Ahmed H. Madian-VLSI 46

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Tapering of wiring trees

Different branches of tree can be set to different lengths to optimize delay.

Dr. Ahmed H. Madian-VLSI 47

Page 48: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Spanning tree

A spanning tree has segments that go directly between sources and sinks.

Dr. Ahmed H. Madian-VLSI 48

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Dr. Ahmed H. Madian-VLSI 49

Distributed driver

Decrease output load capacitance

Undistributed : Cload = 8Cg Distributed: Cload = 6Cg

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Dr. Ahmed H. Madian-VLSI 50

Driving large loads

If large loads have to be driven, the delay may increase drastically. Large loads are output capacitances, clock trees, etc.

CLoad

td = tinv (CL/CG) Where tinv=is the average delay of a minimum-sized inverter driving another minimum sized inverter, CL = load capacitance& CG = gate capacitance

CL= 1000CG, then td = 1000.tinv

A possibility to reduce the delay, is to use a sequence of n scaled inverters, but not the optimum delay:

td = tinv (40/1)+ tinv (200/40) + tinv (1000/200)= 50tinv

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Dr. Ahmed H. Madian-VLSI 51

Driving large loads (cont.)

We may decrease the delay by using larger transistors to decrease the resistance. Scaling transistors by factor S results in:

S

RR

L

WS

L

W

scaledscaled

normalscaled

tr = 2.2Rscaled (Cin+ Cload)

But scaling the transistor also affects the input capacitance of the transistor:

Cin,scaled = S . Cin

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Dr. Ahmed H. Madian-VLSI 52

Driving large loads (cont.)

The problem is if input signal is placed at inverter 1 what’s the number of stages N and

the scaling factor S that will minimize the time needed for the signal to reach Cload

CLoad

...Cin 1 2 3 N-1 N

(W/L) S(W/L) S2(W/L) S

N-2(W/L) S

N-1(W/L)

reference

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Dr. Ahmed H. Madian-VLSI 53

Driving large loads (cont.)

td = t1+t2+t3+…+tN

CLoad

...Cin 1 2 3 N-1 N

(W/L) S(W/L) S2(W/L) S

N-2(W/L) S

N-1(W/L)

reference

C2= SC1C3=S

2C1C1

C4=S3C1

CN=sN-1

C1

R1 R2=R1/S R3=R1/S2 RN-1=R1/S

N-2 RN=R1/SN-1

)(

...

11

11

11

1

2

11

4

3

11

3

2

11

2111

CSRNt

CSS

RCS

S

RCS

S

RCS

S

RCS

S

RSCRt

d

N

N

N

Nd

td = R1C2+ R2C3 + R3C4 +…+RN-1CN+RNCload

Cload = SN C1

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Dr. Ahmed H. Madian-VLSI 54

Driving large loads (cont.)

CLoad

...Cin 1 2 3 N-1 N

(W/L) S(W/L) S2(W/L) S

N-2(W/L) S

N-1(W/L)

reference

C2= SC1C3=S

2C1C1

C4=S3C1

CN=sN-1

C1

R1 R2=R1/S R3=R1/S2 RN-1=R1/S

N-2 RN=R1/SN-1

)(

ln

ln

ln

ln

)(

111

1

1

11

CSRS

C

C

t

S

C

C

N

CSC

CSRNt

Load

d

Load

NLoad

d

For minimum delay, dtd/dS = 0; this yields, S = e =2.71

Page 55: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Dr. Ahmed H. Madian-VLSI 55

Example

we want to drive a load capacitor of value CL = 10pF. The input stage is defined as C1=20fF and has k1=200µA/V2. calculate the number of stages N to minimize the delay.

21.6)500ln()ln(

)1020

1010ln(

)ln(

ln15

12

1

e

x

x

S

C

C

N

Load

We will select N = 6 to obtain non-inverting chain

solution

Page 56: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Dr. Ahmed H. Madian-VLSI 56

Check the web site for Assignment 3.

Due date next Saturday.

2nd assignment

Page 57: Very Large Scale Integration (VLSI) Very Large Scal… · Dr. Ahmed H. Madian-VLSI 9 Delay estimation (cont.) Equivalent circuit used for MOSFET Ideal Switch + Capacitance and ON

Refs.

David Harris, Logical effort lecture notes, Hurvey mid college, 2004.

CMOS VLSI Design, 4th edition

Introduction to VLSI, 2nd edition

Dr. Ahmed H. Madian-VLSI 57