V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine
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Transcript of V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine
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V. Lashkaryov V. Lashkaryov Institute of Institute of
Semiconductor Semiconductor Physics Physics
NationalNational Academy of Academy of Sciences of UkraineSciences of Ukraine
Athens, 11 April 2008Athens, 11 April 2008
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ISP was established in 1960
The staff of our Institute includes now
785 employees:
▪ 2 2 AcademicianAcademicians
▪ 99 Corresponding Members of NASU Corresponding Members of NASU
▪ 8888 Doctors of Doctors of SciencesSciences (Habilitated)
▪ 204204 Candidates of Candidates of Sciences (Ph.D.)Sciences (Ph.D.)
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The areas ofThe areas of fundamental fundamental investigations and scientific-technical investigations and scientific-technical
worksworks▪ physics of semiconductors and semiconductor physics of semiconductors and semiconductor devices; devices;
▪ ▪ semiconductor materials science;semiconductor materials science;
▪ ▪ optics and spectroscopy;optics and spectroscopy;
▪ ▪ optoelectronics;optoelectronics;
▪ ▪ sensorics; sensorics;
▪ ▪ diagnostics and certification of semiconductor diagnostics and certification of semiconductor materials;materials;
▪ ▪ infrared photoelectronics;infrared photoelectronics;
▪ ▪ liquid-crystal and electroluminescence facilities for liquid-crystal and electroluminescence facilities for displaydisplayss; ;
▪ ▪ high-temperature electronics;high-temperature electronics;
▪ ▪ semiconductor solar power engineering semiconductor solar power engineering
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Multichannel Optical RotaMultichannel Optical Rotatingting ConnectorConnector
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Designed for the non-contacting transferring of broadband digital signals to and from a rotating body
Applications:▪ in optical communication systems with rotating components
▪ radar antenna equipment
▪ wide angle azimuth field of view scanning systems in visible and IR
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Solar cells for ground-based portable Solar cells for ground-based portable electronic facilities and mobile electronic facilities and mobile
communicationscommunications
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Technological system for helio-welding
Parameters of solar batteryParameters of solar batteryOpen-circuit voltage, V 40,0Short-circuit current, A 5,5Operating voltage, V 36,0Operating current, A 5,0Peak power, W 180Weight (together with orientation system), kg 20Number of solar battery modules
10Coefficient of module efficiency, %
12-14
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GERMANIUM RESISTANCE THERMOMETERS FOR CRYOGENIC TEMPERATURES
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Diode Temperature Sensors DTS-1
Diode Temperature Sensors DTS-100
Minimized influence of self-heating and noise, enhanced sensitivity in low temperature range, accuracy and reproducibility.
The sensors have provide most reliable and accurate measurements for the objects, which are operating under extreme conditions
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Powder electroluminescent Powder electroluminescent indicatorsindicators
• Average brightness is 50-60 Candle/mAverage brightness is 50-60 Candle/m22 at 150V at 150V and 400 Hzand 400 Hz
• Based on screen printing and roll technologyBased on screen printing and roll technology
• Price ~ 50-80$/mPrice ~ 50-80$/m22
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Semiconductor silicon carbide technology
This technology provides amorphous and polycrystalline silicon carbide with grain sizes from 0.02 up to 5 mm. The main impurity is nitrogen with the concentration <1017 cm-3. The basic application is a source of materials for growing single crystals
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SiC
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INFRARED IMAGERINFRARED IMAGER
The portable infrared imager is designed for detection of thermal (infrared) radiation, subsequent processing of the signal and its real-time visualization on the built-in LCD display or external monitor.
InflammationBlood circulation
Contactless and intrusionless detection of inflammations, blood circulation anomalies and other pathologies, particularly in oncology (breast cancer, thyroid gland cancer), traumatology, gynaecology, post-operation complications control.
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Ecological monitoring and nondestructive control:
Detection of thermal losses of buildings, pipelines, monitoring of moving engine parts, control of fire-risk areas, etc.
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Qadrexed Dimension 3000 NanoScope IIIa Scanning Qadrexed Dimension 3000 NanoScope IIIa Scanning probe microscopeprobe microscope
SCM
STM
AFM
Force modulation
NanoIndentor
Fluid cell
Nanosensors for various methods of tip spectroscopy:C-AFM –conducting AFM; SCM – scanning capacitance m; Fluid c.- for study of fluids, STM – scanning tunelling m.; Force modulation – for the mapping of surface elastic properties
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Examples of nanoindentor functioning
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Thank you for your Thank you for your attentionattention