Utmost TFT Training Part1
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Transcript of Utmost TFT Training Part1
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What is UTMOST?
UTMOST III SPICE Modeling Software generates the most
accurate, high quality SPICE models for analog, digital,
mixed-signal, and RF applications
Leading IDMs, foundries, and fabless companies use
UTMOST III to perform data acquisition, devicecharacterization, parameter extraction, and model
verification
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Agenda
Why need modeling
Utmost installation
Utmost simple Tutorial
Utmost menu and option detail introduction
TFT model introduction
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Why need modeling
Model card is the bridge between foundry and fabless
Circuit accuracy depends on accuracy model
Wrong/inaccuracy model leads to low yield or zero yield
Model card can monitor the process variation.
Use model card can speed up the time to market or profit
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UTMOST Inputs and Outputs
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Utmost Installation
Install the Utmost package
Download the binary packaging
Mkdir ../target path/Silvaco
Cd ../target path/Silvaco
Gunzip < /cdrom/utmost.tar.gz.|tar xf -
Install the SFLM
Download the binary sflm.tar.gz
Mkdir /opt/simucad
Cd /opt/simucad
Gunzip < /cdrom/sflm.tar.gz.|tar xf –
/<install dir>/bin/sflm –install
Bring up web browser http://losthost :3162
Register by online or offline to get the ossid
Apply the license by the ossid and install it
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Simple Tutorial :Utmost main screen& select model
Click utmost button and select interactive item
Select TFT model
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Simple Tutorial: open the file manager
Click the File button in the Utmost main screen
Click the File Manager
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Get the file screen
Drag the setup file to the setup mailbox, the box will show
message loaded
Quit the page
Simple Tutorial: load the setup file
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Simple Tutorial :Open the System main screen
Click the system button on the utmost main screen
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Simple Tutorial: Setup the system options
Click the button on the system screen to setup the options
Set the get RAW data option to simulation or measurement.
Set the graphics control to manual Set the spice model to internal model or smartlib
Set temperature modeling to Disabled
Set the probe control to manual
Set continuity test to Disabled. Keep others option or parameters as usual
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Simple Tutorial: Open spice model screen
Click the Utmost main screen->File->spice model button
Select the spice simulator
Select the model name Click the load model button
Quit the screen
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Simple Tutorial: Open the output log file screen
Click the File->output log files in the utmost main screen
Enter log file name
Enter the header info
Click the Open new
All the data will be in log file
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Simple Tutorial: Open the setup and result screen
Click the Setup button in the utmost main screen
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Simple Tutorial: Open the setup and result screen
Change the Analysis Filter to DC
Select IDS/VDS button
Click the routine control in the utmost main screen
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Simple Tutorial: Open the setup and result screen
Set the Meas. Sections field to 5.
This value controls the number of sweeps performed in thesimulation.
Close the Routine Control Screen by clicking on the Quit
button.
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Simple Tutorial: open model Strategy in utmost screen
Click Strategy button to open the Model Strategy screen
Ensure the device is actived
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Simple Tutorial: Open the extraction screen
click the Extraction button to Open the extraction screen
on the main UTMOST screen.
Select the ID/VD-VG routine
Click on the Measure button.
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Simple Tutorial: Open the graphic screen
Click on the Measure button.
UTMOST will simulate the ID/VD-VG curves according to
the measurement setup and display the results in a
graphics screen.
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Simple Tutorial : Fit and Simulation
There are many options available within the graphics screen.
Under the Options button, select Fit. This invokes the
UTMOST fit algorithm for the ID/VD-VG routine.
Option-> simulation, simulate the curves by model parameters
To quit the graphics screen, click on the Return button.
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Simple Tutorial: open DC measurement screen
To re-simulate the same data using a modified
measurement setup,
locate the Setup and Results screen
click on the Set Measurement button.
opens the DC Measurement Screen.
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Simple Tutorial : Change measurement condition
To alter the voltage sweeping parameters simply edit the
fields adjacent to the corresponding parameter names.
ID/VDS@VGS point 51
Fill in the vds_start_vd
vds_stop_vd
vgs_start_vd
vgs_step_vd
ID/VGS@VDS point 51
Fill in the vgs_start_vg
vgs_stop_vg
vds_start_vg vds_step_vg
Leave the DC Measurement Screen open
Press Measure on the Extraction screen.
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Simple Tutorial: close and save
To close the log file, open the Output Log File screen and
click on Close File.
To save the UTMOST setup, open the File Manager screenand click on the Setup & Log checkbox .
Enter a new name in the Setup File Name field and click on
the Store button.
The File Manager should also show the log file just created.
If no icon for this log file appears in the files area, place the
pointer in the Directory text field and press Return. This will
update the files area.
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Detail introduction: File manager
Filtering
Editing
doulbe click file
Don’t edit binary
Naming
.s for SPICE files
.l for SPICElibrary files
.c for SPICE files
used in circuits
Printing file
Deleting file
Save file
Click Setup&log
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Detail introduction: Primary files
The File Manager is used to initialize UTMOST.
Setup files store system and program operation
information, including ex, meas, opti etc….
Log files are used to store measurement data and
measurement biasing information in ASCII format.
List files contain the results of UTMOST parameter
extractions, including some primitive statistical
analysis results, such as the maximum, minimum,and average values of the model parameters
extracted during the measurement session.
SPICE models are stored in SPICE library files.
SPAYN is a statistical analysis program designed toidentify and help resolve production deficiencies
and to increase yield
Spice model select the model level type
Reedholm file and Keithley file allows utmost to
read or convert Reedholm/Keithley datarespectively
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Detail introduction: List file
Fill the file name in the field
Click open new to create file
Click overwrite to replace file
Click copy to save selected parameters to listfile
Click store to save current entered parametersto list file
Click CLOSE FILE to close file
Parameters can be added by Utmost->Parameters->attributes
List has four typeS
List1: Max, Min, Mean, StandardDeviation of selected parameters, and asummary of die names used andassociated parameter values.
List2: Max, Min, Mean, StandardDeviation of selected parameters, and a
summary of all parameter values.
List3: A simple summary of selectedparameters.
List4: A summary of results, tagged with
wafer and die identifiers.
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Detail introduction: Hardware setup (IV/AC/CV/Noise)
Utmost->Hardware->Configuration Select instrument type Click CPU side
GPIB serial port
Port setup Baud rate Port name (default by computer) Check communication by
POLLING button
Set SMU and GPIB port No.
Set Continuity test( check theconnection quality)
Set Calibration Device connect to GND Test the cable and wire R
Instr Setup to set external
power supplier to IV meter Stimulate mode
Pulse1/Pulse2 options enable1/2 sources to be used.
User option selects useroperation mode.
System option selects normaloperation mode.
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Detail introduction: Hardware setup
Utmost->Hardware->Probing•Select prober type
•Select interface type
•Fill in prober address•Set the prober delay (100+sec)
•#Wafers defined the wafer
number in the cassette
•Select units by English or metric
•Stop option valid in some station.To load new wafer after stop
•Skip unused wafer: skip wafer in
wafer cassette
•Polling to check the prober
connection with computer
•Load/unload/move/set home/go
home/contact/no contact controls
the probe card automatically.
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Detail introduction: Hardware Setup
Utmost->Hardware->instrument
•usually high accuracy or high
power instruments must be
manually controlled.
•Select the
instrument
function
I/V meter, I/V source•Select the instrument type
•Check the connection by Polling
•Quit
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Detail introduction: System screen configuration
Utmost->system
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Detail introduction: System option
Edit names and Values
If Disabled, then parameter and routine names are read-only
If Enabled, then parameter and routine names may be edited.
Get Raw Data From
To define the data source to be used by Measurement, Simulation, Log
File, Reedholm, Keithley and Drawing.
Measurement, data is taken from instruments connected to UTMOST.
Simulation, uses the currently defined model to simulate a device.
This option can be used to compare a developed model with a real device.
Selecting Log File makes it possible to read data from a log file created in
UTMOST.
Selecting Reedholm allows UTMOST to read data from a Reedholmformatted file.
Keithley, UTMOST can be used to read data from a Keithley formatted
file.
The Drawing option will be available in future versions of UTMOST.
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Detail introduction: System option
Prober Control :Three options: Manual, SemiAuto and Auto.
System Messages:
Enable :need operator intervention when individual measurement Disabled :all under computer controll when measurement
Spice Models: determines how UTMOST performs a simulation.
set to External SPICE, UTMOST use an external SPICE program for
simulations. set to Internal Models, UTMOST uses its own internal simulator
set to interpreter, model implemented by smartspice interpreter, to
use external spice to simulate result
Set to Smartlib, would use a separate internal rubberband simulatoronly for DC characterics.
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Detail introduction: system screen configuration
Group Extraction disabled, selected model parameters are logged to SPAYN or list files for
each device chosen.
enabled, the model parameters are logged only once, after all chosen
devices have been tested and analyzed. Technology:
to set according to the UTMOST technology currently in use, such TFT orMOSFET
Graphics Control Set to Manual, UTMOST displays a plot and wait for the Return button to
be pressed before continuing.
Set to No Graph, UTMOST does not display graphs.
Set to Pause, UTMOST will wait a time before display the nextmeasurement.
The waiting time can be set by entering a value in the Pause Wait Timetext field.
MACRO Modeling Set to Enabled, UTMOST uses the netlist and models provided in the
VYPER control file. Set to Disabled, UTMOST uses its internal netlist to simulate.
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Detail introduction: system option
Continuity Test set to Enabled, a continuity test as defined in an SMU Continuity Test screen is performed on each test site.
Set to Disabled, will not do the continuity test on each test site
Repeated Measurement Enabled to ensure all the device can be correctly measured
Disabled will skip the device which has the temporary files (stored data) existed. Temperature Modeling
Enabled, UTMOST to drive connected computer-controlled temperature ovens
Disabled, UTMOST assumes that all measurements are performed at room (nominal)
gds/gm Model It controls how the gds/gm data is produced.
If set to Computed, UTMOST calculates the gds/gm data from the Ids data measured.
There are four different methods:Lagrange 5-point and 3-point methods, and the Linear 5-point and 3-point
methods # of Terminals: describe the device terminal
.Opt Method : Users can switch between the Levenberg-Marquart and the Downhill Simplex method
Nominal Temperature: Nominal Temperature default is room temperature.
File Autoclose Time: This feature avoid measurement data lost by failure to close the files manually.
Usually used in multiple device or several wafer in probe mode measurement
DC Long Delay: defines a delay between measurements if the device needs time to cool etc.
AC Read Delay: defines a delay between the reading the measured AC points from the output buffer of the network analyzer.
AC Sweep Delay: Defines the delay necessary to measure all AC points for each s-parameter family
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Detail introduction: system option
System Init: initialize the setup enviroment.
Print Results: stores the extracted parameters to an ASCII file.
The file is stored in the current directory and has a name in the formatPRINTxx, where xx is a sequential number starting at 00.
The file can be print in file manager
Title Block (die information) displays the Title Block screen,
This screen allows process attributes to be set. These attributes arestored in log files and act as labels in plots
The Title Block screen will also open automatically when List Files orSPAYN Interface are selected from the Files menu.
dcgmin, reltol, vnto, abstol, numdgt, and dnumdgt
above options are SPICE parameters, used for external SPICE and SmartLib simulation.
Replot displays the Replot screen. This screen allows previously simulated or
measured plots to be displayed. To view a plot, select the relevant line of
the plot list and click on the Apply button.
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Detail introduction: system option
Raw data
Display the Raw data set screen
Data manually modified and click the apply to the graphics
In Graphics, use control->show XY option, data can be viewed byreopen the raw data.
Run time debug
Check and debug the interaction of utmost with instrument
Check and debug the interaction of utmost with external spice
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Detail introduction: Local Optimization
Utmost->Local Opti.
•Used to construct the required local optimization strategies
•Yellow diamond indicates that the corresponding step has not been acti
•Red diamond indicates that the corresponding step is in progress.
•Green diamond indicates that the corresponding step has been success
•Blue parameters can not be recognized in current model•Red Parameters indicates values reached their upper or lower boundar
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Detail introduction: Local optimization
Click the Define strategy
•can use current/current derivative/ current+derivative as local optimization target
•Enter correct routine number in the routine field
•A red flag indicate the parameters actived
•Target selection: select the curves range for optimization
•Select strategy by click select strategy in local optimization screen.
•Define the print information by click the Define printout in local optimization screen
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Detail introduction: Parameters screen
Utmost->Parameters
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Detail introduction: parameters screen
To specify the parameter name, value of optimized, fit
initial ,user initial, minimum, maximum
Three mode: edit, insert, delete
Click attribute button to mark the parameters in spice file,list file and spayn file
Copy parameters among opti, fit, user, min, max
Select routine by enter the routine number field, routinename will be changed corresponding with the name
Select strategy number by selecting the parameters
After selection the total opt. button will show the parameters
number
Click the Total opt. button , it will clear the selection
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Detail introduction: Setups option
Utmost->setups
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Details introduction: setups option
Display a table of routine names for current
technology
Analysis filter can display particular analysis
type by input the analysis type or click theright arrow
Click on the Clear Last Data button to delete
any data that is related to the current routine,
including temporary files and results files.
To delete data from all routines, click on the
System Init button on the Common Control
screen.
The Create Routine and Modify Routine
buttons provide functions that are to be usedby routine developers only.
Click on the Attributes button to open the
Routine Attributes screen .This screen
provides information about the capabilities of
the selected routine.
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Detail introduction: DC measurement screen
Utmost-> setup->set measurement
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Detail introduction: DC measurement screen
# Of Setups field can be used to create multiple
measurement setups for a given routine.
To change the number of setups, enter the required
number in the text field and press the Return key.
UTMOST automatically copies the current setup toany new setup.
To select an individual setup, use the pop-up menu
next to the Setup label.
Clicking on the Fit Vars button opens the Fitting
Variables screen. This screen is used to set variablesthat control the UTMOST fitting algorithms and
parameter extraction.
Sweep mode can be linear, log10, log 25, log50
To model can choose ID/VG, Gm, ID/VD etc..
Can select GDS or RDS
Can setup the SMU range
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Detail introduction: Extraction screen
The Extraction screen is used to initiate all principal UTMOST operations,
such as measurement, parameter extraction, simulation, and optimization.
Utmost->extraction
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Detail introduction: Extraction screen
Optimization and Fitting Options UTMOST can perform fitting (parameter extraction) and optimization
automatically after measurement data is obtained.
The Fitting and Optimizer buttons on the Routine Control screen can be set
individually for every routine in the test sequence.
If the Fitting and Optimizer buttons are Disabled, fitting and optimization can
be performed from the Graphics screen
Repeated Measurement
Control
options
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Detail introduction: Configuring Routines
Utmost->Routine control
Click utmost->setup->create routine or select a routineOpen the routine control screen
Fitting, Simulation and Optimization are Enabled, three tasks are performed
in the following order: Fitting, Optimization, and Simulation.
two or more of these buttons are enabled while UTMOST is in manual mode,
the user must press the Return key to move from one process to the next
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Detail introduction: Configuring Routines
Fitting If the Fitting button is Enabled, UTMOST automatically attempts to extract fitting
parameters from the measured data when a measurement is completed.
If a local optimization sequence is enabled for the routine in use, the regular fittingoperation is followed by the local optimization sequence.
The fitting operation is equivalent to selecting Fit from the Options menu of the Graphicsscreen. If the Fitting button is Disabled, then no automatic fitting or local optimizationtakes place.
Fit Sections The number in the Fit Sections button shows the number of subsets of measurement
data that will be fitted for the current routine.
Simulation If the Simulation button is Enabled for a routine, simulation is performed automatically
after the measurement and after fitting and local optimization,
the Simulation button is equivalent to selecting Simulation from the Options menu of theGraphics screen
Global Optimization If the Global Optim. button is Enabled for a routine, the optimizer is invoked
automatically when a measurement is completed.
Enabling the Global Optim. button is equivalent to selecting Global Optim. from theOptions menu of the Graphics screen.
If the Global Optim. button is Disabled, optimization must be done manually from theGraphics screen. The UTMOST optimizer is not available for all routines. The Routine
Attributes screen, defined as part of the Setup and Results screen, can be used to checkif optimization is allowed for a given routine.
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Detail introduction: Configuring Routines
Local Optimization If the Local Optim. button is Enabled for a routine, then the optimizer is invoked
automatically when a measurement is completed.
Enabling the Local Optim. button is equivalent to selecting Local Optim. from theOptions menu of the Graphics screen.
If the Local Optim. button is Disabled, optimization must be done manually from theGraphics screen. The UTMOST optimizer is not available for all routines. The Routine
Attributes screen, defined as part of the Setup and Results screen, can be used to checkif optimization is allowed for a given routine.
Plotter If the Plotter button is Enabled, and PostScript is selected in the hardware configuration
screen, when a measurement is completed UTMOST automatically generates aPostScript file.
To create a PostScript file with a different name, enter the new filename in thePostScript/HPGL text field in the Routine Control screen.
Enabling the Plotter button is equivalent to clicking on the Plot button on the Graphicsscreen.
Measurement Sections The Measurement Sections text field defines the number of curves that will be measured
for the current routine. For example, when measuring IDS for different values of VDS, it iscommon to produce a family of curves by varying VGS for each set of VDS values. TheMeasurement Sections field gives the number of VGS increments.
Optimizer Setup
The Optimizer Setup button opens the Optimizer Setup/Status screen. This screen isused to assign values to variables required by the optimizer.
D il i d i C fi i R i
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Detail introduction: Configuring Routines
Data Setup The Data Setup button opens the Data Setup screen. This screen displays each
measured data point and the value of the measured and simulated data at that point.
An error value is given to show the percentage error between simulated and measured
data.
If several devices are measured, it is possible to display the information for an individual
device by selecting the device name in the Structure Name section.
To print the information, click on the Print button. This sends the data displayed on the
screen directly to the connected printer.
To save the information to a file, enter a name in the File Name text field and click on theStore File button.
D t il i t d ti C fi i R ti
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Detail introduction: Configuring Routines
Temperature The Temperature button opens the Temperature Setup screen.
The number of temperature points and the temperature at each point are constant for all
routines.
To mark a routine for a particular temperature, click on the button to the left of thetemperature value and a flag appears.
The temperature flags can be set and cleared by the SET ALL and CLEAR buttons.
The selected temperature points can be stored in a text file, which can be loaded to
UTMOST later.
D t il i t d ti C fi i R ti
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Detail introduction: Configuring Routines
Multiple Select The Multiple Select button opens the Multiple Routine screen.
If a routine has several distinct stages (routine number >0), this screen allows the user to
control the stages performed by UTMOST.
Result The Result button opens the Result screen.
This screen displays which parameters are extracted by the current routine using regular
fitting techniques.
enter a number in the appropriate Extracted text field.
enter the desired values in the Minimum and Maximum text fields.
save a parameter value in a SPAYN or List file, click on the SPAYN or List button.
If a parameter is marked for saving, a flag is displayed next to the parameter name. To
unmark a parameter, click on the button again.
Detail introduction: Configuring Routines
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Detail introduction: Configuring Routines
Preset opens a parameter Preset screen for the current routine.
can be used to preset selected parameter values and/or limits that take effect whenever
the routine is activated or routine finished
this screen also can be used to reset selected parameter values and/or limits after the
routine is finished.
The Routine field displays the currently selected routine.
The “# of parameters” field displays the number of parameters to be set (default is zero).
The parameter names in the Names column can be edited only when the Edit button in
the System window is set to Enabled. pre-set will be transferred to the UTMOST Parameters screen when the routine is
executed.
Detail introduction: Configuring Routines
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Detail introduction: Configuring Routines
Local Optimization Sequence
Local optimization is possible using many UTMOST routines.
This screen defines a sequence of local optimization strategies.
These strategies are set up in the Local Optimization screen of
the main UTMOST window.
user enters the strategies into the local optimization sequence
using their numbers, as defined in the Local Optimization
environment.
Detail instruction: Modeling Strategies
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Detail instruction: Modeling Strategies
The Model Strategy screen is used to set and to display a
summary of measurement and optimization strategies for
each routine, device, group and temperature.
The following information is defined in other screens:
Routine name - Setup and Results screen.
Temperature - Temperature Setup screen (from Routine Control).
Group - Group List screen (Hardware Probing). Device Name, Polarity and Geometry - Device Pad Definition
Screen (Hardware Probing; any changes made in this screen
also changes the Device Pad Definition screen, as the two
screens work interactively).
Setup Number – Measurement Setup under Setup and Results
screen.
Optimization Set – Parameters screen
Detail instruction: Modeling Strategies
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Detail instruction: Modeling Strategies
Utmost->Strategy
Detail instruction: Modeling Strategies
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Detail instruction: Modeling Strategies
The Model Strategy screen is routine dependent.
This screen can be used to mark or activate any available device formeasurement by the routine
If temperature modeling is enabled, devices can be measured at different
temperatures If multiple groups have been defined the group number canbe changed by clicking on the Group button.
Click on the Clear Sequence button to restart selections for the currentroutine.
the Set All Grps (set this group, set all temp.) button will highlight(select) all devices in all groups.
There are six possible optimization strategies.
The Setup Number refers to a measurement setup defined in theMeasurement screen of the Setup and Result screen. Severalmeasurement setups can be defined in the Measurement screen. TheSetup # button on the Model Strategy screen can be used to set the
measurement conditions for the particular device and routine. The polarity of a device can be changed to . available polarities (for
MOSFETs the options are NMOS, PMOS, and Dummy)
The Model button is used to select which set of parameters is used toperform simulation and optimization.
Geometry (Width and Length )
Detail introduction: Displaying Results Graphically
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Detail introduction: Displaying Results Graphically
Utmost->extraction->measurement
A Graphics screen can display single and multiple plots.
the number of plots depends on the number and type of routines
in the measurement sequence, Up to 18 plots .
Detail introduction: Displaying Results Graphically
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Detail introduction: Displaying Results Graphically
The Attributes button on the Graphics screen opens the
Graphics Attributes screen.
•Maximum and Minimum values for the
X and Y axes
• Scale of X and Y axes, X and Y axis
labels, X and Y axis units
• Plot title
• Frame color• Line color, line style and marker type
• Continuity • Optimization (viewport)
box color and line style
• Scaling
Detail introduction: Displaying Results Graphically
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Detail introduction: Displaying Results Graphically
Options Raw Data
The Raw Data option refreshes all the plots in the graphics screen with original
measured data. All simulation, optimization, and fitting results are removed from the
Graphics screen, but remain in the Parameters screen and the Results screen. Fit
Selecting Fit invokes the UTMOST fitting algorithm for parameter extraction for the
given routine.
Simulate
The Simulate option causes UTMOST to simulate data for the current routine.
Global Optimize
The Global Optimization is invoked by selecting the Global Optim. option.
Local Optimize
The Local Optimization is invoked by selecting the Local Optim. option.
Exchange The Exchange option allows the user to swap measured and simulated data.
Detail introduction: Displaying Results Graphically
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Detail introduction: Displaying Results Graphically
Option Modeling
The feature allows the user to perform multiple simulations for the routine selected.
Spice Model Development screen allows the user to sweep model parameters and
temperature, and to perform a simulation at each step. To select a model parameter to sweep, click on the numbered button next to the
parameter name. The start, stop, and step values for the sweep should be entered
in the fields provided.
The sweep types available are Linear, Log3, Log5, Log10, Log15 and Log20.
To perform the simulations, click on the Execute button. The simulation results can
be displayed in two or three dimensions. This feature is controlled by the 2D/3DGraphic button.
For 3D display, the colors can be adjusted from the Shadowing screen. The
Shadowing screen is opened by clicking on the Shadowing button on the Spice
Model Development screen.
Detail introduction: Displaying Results Graphically
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p y g p y
Rubberband
With rubberbanding, individual model parameters can be
adjusted, and the results are displayed immediately.
The Save Results button writes the modified parameter values tothe optimized column of the Parameters screen.
There are five simulation speeds available.
Detail introduction: Displaying Results Graphically
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p y g p y
option
Calculator
The Calculator is available for performing simple calculations. In
some routines it can be programmed to modify measured data.
Emulator
The Emulator option opens the Emulator 4145 screen. This screen
emulates the function of the HP4145 instrument in its interactive
measurement mode.
Agenda for TFT modeling training
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g g g
Model selection
Model layout design and manufacturing
Model IV/CV/Timing curves measurement
Model parameters extraction
Model parameters QA
SILVACO TFT Models Selection
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Currently supports 4 TFT device models
Level=15 ( Leroux Amorphous Model ) Level=16 ( Berkeley Polysilicon Model)+Leakage current Model
Level=35 ( RPI Amorphous Model ) ( Version=1 & Version=2)
Level=36 ( RPI PolySilicon Model ) ( Version=1 & Version=2)
RPISCALE=1 SMART=0,1,2,3 Model
TFT Models
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Provides 4 models :
Leroux model (Amorphous Si, level 15)
RPI model (Amorphous Si, level 35)
Berkeley TFT model (Polysilicon, level 16)
RPI model (Polysilicon, level 36)
Source Drain
Glass substrate
Gate
Gate insulator
Passivation Intrinsic a-Si
Conducting channel
N+ a-Si N+ a-Si
GateDrain
Sourcegate oxyde
quartz or glass substrate
poly-Sin+ n+
SiO2 coating
SVA: 4PR TFT
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DRAIN
PA-SiNx
n+ a-SiSOURCE
GATE
a-Si
GLASS
ITO
G-SiNx
TFT Equivalent Circuit
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Agenda for TFT modeling training
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Model selection
Model layout design and manufacturing
Model IV/CV/Timing curves measurement
Model parameters extraction
Model parameters QA
TFT model layout design for DC/AC measurement
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Agenda for TFT modeling training
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Model selection
Model layout design and manufacturing
Model IV/CV/Timing curves measurement
Model parameters extraction
Model parameters QA
IV curve measurement
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IDS/VGS( Drain current)
VGS sweep over a defined range@ a set of VDS
IDS/VDS
VDS sweep over a defined range @ a set of VGS
CV Measurement
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CGDO( Gate to Drain Overlap Capacitance)
Gate to Drain Voltage sweep from big negative to big positive value. The
overlap typical value is 1200microns, capacitance typical value is 25 to
70 pf.
CGSO( Gate to Source Overlap Capacitance)
INTCAP
CGS ( Source: LCR H,DC ,Gate :LCR L, Drain/B DC)
CGD (Drain: LCR H, DC, Gate: LCR L, Source/B DC)
CGC (Drain/Source short, LCR L, Gate LCR H,B DC)
CGB (Drain/Source short DC, Gate LCR H, B: LCR L)
CGG (Drain/Source/B short, LCR L, Gate: LCR H)
Timing Domain measurement
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Drain connect to VDD
Source connect to GND of Oscilloscope
Ultmost read the period of each VDD
Display the Tpd VS VDD
Agenda for TFT modeling training
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Model selection
Model layout design and manufacturing
Model IV/CV/Timing curves measurement Model parameters extraction
Model parameters QA
Device Characterization
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Saturation Region
Linear Region
-14
-12
-10
-8
-6
-4
L o g
[ D r a i n C u r r e n t ( A m p s ) ]
-30 -20 -10 0 10 20 30
Gate Voltage [Volts]
Vds = 10V
Leakage Above-Threshold
Sub-ThresholdTopmost curve: Vgs = 20 V; Step: -2.5 V
0 10 20 30
Drain-source voltage [V]
0u
2u
4u
6u
8u
10u
D r a i n c u r r e n t [ A ]
Different Regimes of Operation
Model parameter extraction
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Select model type
Loading curves Global extraction (auto)
Fine tune and optimization
Simulation
Check Error criteria
Iteration
Generate the model card
TFT model Routine
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A typical parameter extraction sequence would proceed as follows:
Use the IDS/VGS routine to measure IDS vs. VGS curves measured at various
drain-source biases.
Local or Global Optimization strategies could be implemented in order to extractthreshold voltage, mobility, drain-induced barrier lowering, subthreshold, and gate-
induced drain leakage parameters.
Use the IDS/VDS routine to measure IDS vs. VDS curves measured at various
gate-source biases.
Local or Global Optimization strategies could be implemented in order to extractvelocity saturation, channel length modulation and hot carrier parameters.
Use the CGDO and CGSO routines to extract gate-drain and gate-source overlap
capacitances and associated parameters.
Extract temperature parameters using Local or Global Optimization techniques
with IDS/VGS and IDS/BDS data measured at temperatures other than roomtemperature.
Use the ton/toff or timering routines to extract TFT time domain parameters.
TFT DC modeling routine1: IDS/VDS
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IDS/VDS (Drain Current Modeling Routine) The IDS/VDS routine is used to verify TFT functionality and to measure TFT
drain current.
This measured data can be used to simulate and optimize TFT model
parameters related to velocity saturation and channel length modulation.
Data Acquisition IDS vs. VDS@VGS (constant)
The number of VGS voltage steps is defined in the Routine Control screen
using the Measurement Sections field.
A TFT device is connected according to the SMU definitions, and the VDS
and VGS voltages defined.
Typically, TFT devices are used in the forward bias mode. When this is the
case, the VDS drain voltage is swept from 0V to the VDSmax. If the TFT
device is used in forward and reverse bias mode, then the VDS drain voltagecan be swept from -VDSmax to +VDSmax.
TFT DC modeling routine2: IDS/VGS
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IDS/VGS
The IDS/VGS routine is used to verify TFT functionality and to
measure TFT drain current.
measured data can be used to simulate and optimize TFT modelparameters related to threshold voltage, mobility, subthreshold,
drain-induced barrier lowering and gate-induced drain leakage.
Data Acquisition
IDS vs VGS @ VDS (constant)
The number of VDS voltage steps is defined in the Routine
Control screen using the Measurement Sections text field.
The TFT is connected according to SMU definitions, and the VDS
and VGS voltages are defined.
Typically the TFT will be measured from weak-inversion to
strong-inversion with the gate bias being swept from a negative
to a positive voltage in the case of an n-type TFT device.
TFT DC modeling routine3: VTO
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VTO (Threshold Voltage Extractions)
The threshold voltage extraction routine VTO measures a single
IDS/VGS curve and extracts model parameter VTO from the
largest slope of the curve.
This routine can be used for extracting temperature model
parameters if measurements are performed at a number of
different temperatures.
Data Acquisition
A data set is obtained as the drain current values for one gate
voltage sweep.
A TFT device is connected according to the SMU definitions, and
the gate voltage VGS is swept over a specified voltage range
while the drain voltage VDS is kept constant.
Threshold voltage measurement and extraction is typically
performed on a large TFT device (typically 25/25).
The model parameter VTO represents the threshold voltage
value at 0V of substrate bias and low value of drain voltage VDS.
TFT DC modeling routine4: LAMBDA
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LAMBDA (Channel Length Modulation)
The channel length modulation routine LAMBDA measures a
single IDS/VDS curve for a constant gate voltage VGS.
From this single data set, model parameter LAMBDA is extracted.
Data Acquisition
A data set is obtained as the drain IDS current values for one
drain voltage VDS sweep, while the gate voltage VGS is kept
constant.
The VGS voltage value is typically way between VTO and 0V.
The model parameter LAMBDA models the channel length
modulation effects in a TFT device. Due to this effect, a TFT
device has a finite output conductance in the saturation region.
TFT DC modeling routine5: BVDO
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BVDO (Drain to Source Breakdown Voltage Extraction) The BVDO drain to source breakdown voltage routine measures the
voltage across the drain to source terminals, while the gate terminals isshorted to ground and current is forced into the drain terminal.
The drain to source breakdown voltage occurs at the point where thevoltage across the terminals starts to increase rapidly. The breakdownvoltage parameter BVDO is extracted at a specified current I_to_fit.
Data Acquisition The forcing drain current should always be swept logarithmically across a
specified current range while the drain to source voltage is measured. The SHORT integration time option and the LOG10 logarithmic sweep
option are recommended in order to ensure minimum heat generationinside the device during the measurements.
The breakdown voltage measurements are destructive if not handled
properly. Set the current compliance properly and carefully to avoid device
destruction.
The value of BVDO is extracted at a given drain current I_to_fit. BVDOcan be extracted over temperature for process control purposes. NoSPICE parameter is extracted.
TFT DC modeling routine6: ALL_DC
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ALL_DC (Multitarget TFT DC Modeling) The ALL_DC routine is used to measure a set of IDS versus VGS and IDS
versus VDS curves for a number of TFT geometries.
These data sets can be used to extract the entire scalable set of modelparameters for any TFT model.
All of the measurement data is collected in one measurement sequence.
Current, conductance, or resistance can be selected for a measurement setas an optimization target for up to 40 different TFT geometries.
ALL_DC measurement data is a suitable target for regular or localoptimization strategies.
If ALL_DC data is stored in a data log file, it can be used as a source of datafor the IDS/VDS and ID/VGS routines.
Data Acquisition IDS vs VDS data set to be used for drain current IDS, output conductance gds,
or output resistance rds modeling is measured while VDS is swept over adefined voltage range for a set of VGS values.
IDS vs VGS data set to be used for drain current IDS and transconductancegm modeling is measured while VGS is swept over a wide voltage range (to
ensure that the device operates in the linear region) for a set of VDS values. The output resistance rds, output conductance gds, and transconductance
gm are internally computed from the measured drain current IDS.
After this computation, the data for all four potential optimization targets (draincurrent IDS, output resistance rds, output conductance gds, andtransconductance gm) becomes available for all measured geometries..)
TFT Capacitance Routines
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CGDO Gate To Drain Overlap Capacitance
extracts the CGDO model parameter.
Data Acquisition
The gate to drain voltage is swept from a large negative value
(typically -5V) to a large positive value (typically +5V).
The overlap structure is rather long, typically 1200 microns. This
produces an accurate measured capacitance with a typical value of
25pF to 70 pF.
CGD=W*CGDO
Others is same as CGDO
TFT Time Domain Routines
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ring_osc
The ring_osc routine reads oscillator period vs (tpd) data from an
oscilloscope, and displays the measured Tpd vs VDD data.
Data Acquisition
The user enters the VDD_start, VDD_step and #_of_steps for the
data collection.
Drain terminal should be connected to VDD, and Source terminal
should be connected to GND of the ring oscillator circuit.
The Output signal will be measured by the oscilloscope, and
UTMOST will read the "period" for each VDD step from the scope.
After the completion of all VDD steps, the Tpd vs VDD data will
be displayed.
Model Generation
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Supports widest selection of commercially available device models
Generates models for SmartSpice, HSPICE, Spectre and ELDO
Offers fast buit-in SPICE simulation library (SmartLib)
External SPICE mode allows you to connect to any SPICE simulator
Supports the conversion of model parameter sets from one model to
another Macro modeling and parameter extraction is available for devices
which cannot be adequately modeled by any existing device models
User-defined models linked dynamically
Support for SmartSpice interpreter models Fast simulation using SmartLib Model and Fast internal solver
Agenda for TFT modeling training
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Model selection
Model layout design and manufacturing
Model IV/CV/Timing curves measurement Model parameters extraction
Model parameters QA
Model QA
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Check model curve RMS and Max Error
Check model parameters boundary, if any violation Physics Check the model continuity and quadratic differential
Check Convergence
Check Spice compatibility
Check Temperature Stability
Check voltage stability
Check geometry stability
SILVACO TFT Models
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SmartSpice currently supports 4 TFT device models
Level=15 ( Leroux Amorphous Model )
Level=16 ( Berkeley Polysilicon Model)+Leakage current Model
Level=35 ( RPI Amorphous Model ) ( Version=1 & Version=2)
Level=36 ( RPI PolySilicon Model ) ( Version=1 & Version=2)
RPISCALE=1 SMART=0,1,2,3 Model
SILVACO TFT Models
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MOS Geometry Model parameters
Parameter Description Units Default
ACM Area Calculation Method 0
DEL Channel length reduction (Level 1, 2, 3, and 6 only ) m 0
XJ Metallurgical junction depth m 0.15e-6
LD(DLAT,LATD) Lateral diffusion into channel from source and drain m 0.75*XJ
WD Lateral diffusion into channel from bulk m 0
LDIF Lateral diffusion beyond the gate m 0
HDIF Heavily doped diffusion length. m 0
XL(LDEL) Masking and etching effects on L m 0
XW(WDEL) Masking and etching effects on W m 0
DL(DL0) Channel length reduction ( Level 4, 5, and BSIM3 module only) um 0
DW(DW0) Channel width reduction ( Level 4, 5, and BSIM3 module only) um 0
GEO Source/drain geometry selector 0
Common Geometry and Bulk diode Model Parameters (ACM)
ACM=0 : Berkeley SPICE models ( pn bulk junctions and source (drain) resistors.
ACM=1 : ASPEC Model, Improved pn junction models ( high and low doping regions )
ACM=2 : Physical model, ( high and low doping regions device and is suitable for LDD
devices )
ACM=3 : ACM=2 extension ( shared source and drain MOSFET geometry )
SILVACO TFT Models
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Capacitance model pa rame ters
Parame ter Descr iption Units Default
CGDO Drain Overlap Capac itance factor F/m 0
CGSO Drain Overlap Capac itance factor F/m 0
Drain/Source resistance model parameters
Parameter Description Units Default
RD Drain ohmic resistance
Ohm(ACM=0)
Ohm/sq (ACM =1,2,3) 0
RS Source ohmic resistanceOhm(ACM=0)
Ohm/sq (ACM =1,2,3)0
RDC Drain contact resistance Ohm 0
RSC Source contact resistance Ohm 0
RSH Drain, source diffusion sheet resistance Ohm/sq 0
SILVACO TFT Models
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Self Heating Thermal Model Parame ters
Parameter Description Units Default
SHMOD(SELFT)
Self-Heating Selector 0
RTH0 Thermal Resistance C/W 0
CTH0 Thermal Capacitance W.s/C 0
Drain/Source resistance model parameters
Parameter Description Units DefaultRD Drain ohmic resistance
Ohm(ACM=0)Ohm/sq (ACM =1,2,3)
0
RS Source ohmic resistanceOhm(ACM=0)
Ohm/sq (ACM =1,2,3)0
RDC Drain contact resistance Ohm 0
RSC Source contact resistance Ohm 0
RSH Drain, source diffusion sheet resistance Ohm/sq 0
SILVACO TFT Models
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MOSFET models levels 1, 2, 3, 6, and 9Leff=L*SCALE*LMLT+XL*SCALM
-2(LD+DEL)*SCALEWeff=W*SCALE*WMLT*XW*SCALM
-2*WD*SCALMWeff*=W*SCALE*WMLT+XW*SCALM( for overlap cap calculation )
MOSFET models levels 1, 2, 3, 6, and 9Leff=L*SCALE*LMLT+XL*SCALM
-2(LD+DEL)*SCALEWeff=W*SCALE*WMLT*XW*SCALM
-2*WD*SCALMWeff*=W*SCALE*WMLT+XW*SCALM( for overlap cap calculation )
MOSFET models levels 4, 5, 7, 10, and 69Leff=L*SCALE*LMLT-2LD ( if DL is not define)
if DL is not specified,Leff=L*SCALE*LMLT+Xl*SCALM -2LD*SCALEif DW is define,
Weff=W*SCALE*WMLT-WD, Weff*=Weff.If DW is not specified,Weff=W*SCALE*WMLT+XW*SCALM-2WD*SCALWeff*=W*SCALE*WMLT+XW*SCALE
MOSFET models levels 4, 5, 7, 10, and 69Leff=L*SCALE*LMLT-2LD ( if DL is not define)
if DL is not specified,Leff=L*SCALE*LMLT+Xl*SCALM -2LD*SCALEif DW is define,
Weff=W*SCALE*WMLT-WD, Weff*=Weff.If DW is not specified,Weff=W*SCALE*WMLT+XW*SCALM-2WD*SCALWeff*=W*SCALE*WMLT+XW*SCALE
SILVACO TFT Models
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ACM=3
GEO = 0 : No sharing
GEO = 1 : Drain is shared with other devices
GEO = 2 : Source is shared with other devices
GEO = 3 : Both drain and source are shared
with other devices
default is GEO = 0
ACM=3
GEO = 0 : No sharing
GEO = 1 : Drain is shared with other devices
GEO = 2 : Source is shared with other devices
GEO = 3 : Both drain and source are shared
with other devices
default is GEO = 0
If AD is unspecified (ACM=2, ACM=3(GEO=0,2))ADeff=(2*HDIF*SCALE*WMLT*(Weff*))*M
If ACM=2 or ACM =3 and GEO=1, 3
ADeff=(HDIF*SCALM*WMLT*(Weff*))*M
else
ADeff=(AD*SCALE^2*WMLT^2)*M
If AS is unspecified ( ACM=2, or ACM=3 (GEO=0,1))ASeff=(2*HDIF*SCALM*WMLT*(Weff*))*M
if ACM=3, and GEO=2,3
ASeff=(HDIF*SCALM*WMLT*(Weff*))*M
else
ASeff=(AS*SCALM^2*WMLT^2)*M
If AD is unspecified (ACM=2, ACM=3(GEO=0,2))ADeff=(2*HDIF*SCALE*WMLT*(Weff*))*M
If ACM=2 or ACM =3 and GEO=1, 3
ADeff=(HDIF*SCALM*WMLT*(Weff*))*M
else
ADeff=(AD*SCALE^2*WMLT^2)*M
If AS is unspecified ( ACM=2, or ACM=3 (GEO=0,1))ASeff=(2*HDIF*SCALM*WMLT*(Weff*))*M
if ACM=3, and GEO=2,3
ASeff=(HDIF*SCALM*WMLT*(Weff*))*M
else
ASeff=(AS*SCALM^2*WMLT^2)*M
If PD is unspecified (ACM=2, ACM=3(GEO=0,2))PDeff=(4*HDIF*SCALE*WMLT*2(Weff*))*M
PDeff=2*HDIF*SCLM*WMLT*(Weff*)*M
If ACM =3 and GEO=1, 3
PDeff=(2HDIF*WMLT+(Weff*))*M
else PDeff=(PD*SCALE*WMLT)*M
If PS is unspecified ( ACM=2, or ACM=3 (GEO=0,1))
PSeff=(4*HDIF*SCALM*WMLT+2(Weff*))*M
if ACM=3, and GEO=2,3
PSeff=(2HDIF*SCALM*WMLT+(Weff*))*M
else PSeff=(PS*SCALM*WMLT)*M
If PD is unspecified (ACM=2, ACM=3(GEO=0,2))PDeff=(4*HDIF*SCALE*WMLT*2(Weff*))*M
PDeff=2*HDIF*SCLM*WMLT*(Weff*)*M
If ACM =3 and GEO=1, 3
PDeff=(2HDIF*WMLT+(Weff*))*M
else PDeff=(PD*SCALE*WMLT)*M
If PS is unspecified ( ACM=2, or ACM=3 (GEO=0,1))
PSeff=(4*HDIF*SCALM*WMLT+2(Weff*))*M
if ACM=3, and GEO=2,3
PSeff=(2HDIF*SCALM*WMLT+(Weff*))*M
else PSeff=(PS*SCALM*WMLT)*M
MOS diode Model for ACM=2 and ACM=3
SILVACO TFT Models
7/25/2019 Utmost TFT Training Part1
http://slidepdf.com/reader/full/utmost-tft-training-part1 96/96
- 9 7 -UTMOST
If NRS is specified,
else,
If NRS is specified,
else,
If NRD is specified,
else,
If NRD is specified,
else,
M
RSC RSH NRS RS Weff
SCALM LDIF LD
RSeff )***
)(
M
Weff
RS SCALM LDIF LD RSH SCALM HDIF
RSC RSeff *
**)(**(
M
RDC RSH NRD RS Weff
SCALM LDIF LD
RDeff
)***
)(
M
Weff
RDSCALM LDIF LD RSH SCALM HDIF
RDC RDeff *
**)(**(