Using Advanced Manufacturing Techniques for …...Using Advanced Manufacturing Techniques for...
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Using Advanced Manufacturing Techniques for Thermal Management of High-Reliability Power Components
Jens EltzeApex Microtechnology
IMPORTANT DISCLAIMER
• The numbers in the presentation are not fully accurate due to confidentiality agreements, but represent the results of studies done for designs of high reliability modules
• The presentation is intended as a showcase how to achieve high reliability. As each module is unique, each design requires its own technical approaches
• Special thank you to Dr. Fang Luo, Riya Paul, Hongwu Peng and Amol Deshpande from University of Arkansas for providing a technical portion of the subsequent presentation
• Thank you to Heraeus for approving the use of proprietary graphs and information in this presentation
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Why is Thermal Management Important?
• SiC devices can withstand temperatures beyond 200°C. Why do I need to worry about thermal management then?
• High reliability = operation with very low failure rate
• Most failures are not due to the temperature itself, but due to thermal stress caused by cyclical change in temperature
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Typical Failure Mechanisms for Temperature Changes
• Typical lifetime graph (Al Wire Bond) • Most common failures mode: interconnect failures
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Heel crackBond crack
Die detach
Case Study: Robotic Manufacturing
• Robotic precision positioning system– 24/7 operation
– 20 ms positioning pulse @ 100 Hz
• 300 V DC, 40 APEAK
– 8 Hz operation
– 4 year expected life
→ 1 billion power cycles over lifetime
• Junction temperature rise per power cycle must be less than 20 K when using Al wire bond
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Power Loss Contributors (PWM Control)
• Conduction Loss: P = ∫ I2 (t) ·RDS(on) dt
• Switching losses (unless zero current switching is suitable)
– Switching losses also depend on gate drive resistance
• Case study example
– PLOSS = 34.6 W
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Thermal Impact of Power Loss – Simulation Model
• DBC stack-up
– Heat dissipation angle assumed to be 45°
• Resulting thermal model
– Cauer R-C Thermal Network (w/o cold plate attach)
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SiCDie
DieAttach
TopCopper
AlN/Ceramic
BottomCopper
Heat Sp. Attach
ColdPlate
TJ
PLOSS(t)
TA
HeatSpreader
SiC Die
DBC Material
Heat Spreader
Cold Plate
Simulation of the Thermal Impact due to Power Loss
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• Simulation with industry standard DBC stack-up:– 0.3mm (Cu) + 0.5mm (AlN) + 0.3mm (Cu)
RG=0 : ΔTJ=31 K RG=2 : ΔTJ=45 K
756045301530
50
70
90
TJ-PEAK = 82°C
Time (ms)7560453015
30
50
70
90
TJ-PEAK = 68°C
Time (ms)
Tem
per
atu
re (
°C)
Tem
per
atu
re (
°C)
Reliability Challenge
• The system generates 34.6 W pulses of power loss in the Silicon Carbide MOSFET
• To achieve 1 billion power cycles, we need to keep the temperature rise of the MOSFETs below 20 K if we use common mounting techniques
• Thermal simulations show that the conditions are not met, resulting in lower reliability of the module
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RG=0: 80M
RG=2: 10M
Ways to Improve the Reliability
• Option 1: Increase the thermal capacitance close to the die attach to reduce the temperature rise– Example: add graphite layer
• Option 2: reduce temperature increase by adding more output MOSFETs in parallel– Impact on cost of module
• Option 3: Relax temperature rise requirements by selecting alternative mounting techniques– Replace the traditional aluminum wire bonding
with alternative connectivity methods
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Tweakable thermal capacitances
Heel crackBond crack
Die detach
Considering Package Material and Technology
• The graph provided by Heraeus shows the relative improvement from traditional solder and Al wire bond technology to advanced interconnect options
• Moving from Al wire/solder to AlCuribbon/silver improves reliability by a factor of 12
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0
100000
200000
300000
400000
500000
600000
700000
SolderSAC/300µm Al
Wire
SolderPbSn5/300µm
Al Wire
Ag/300µm AlWire
Ag/300µm AlRibbon
Ag/300µm AlCuRibbon
Ag/300µm CuWire
Ag/300µm CuRibbon
Thermal Cycles for ΔT=150K (TM=105°C)
Failure: Die attach solder material
Failure: Top connect (wire/ribbon)
Failure: Top metallization
Source: Heraeus
x1.5
x5
x2x2x3x2
Reliability Prediction for Interconnect Options
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x12
Traditional solder/Al
Al Ribbon
AlCu Ribbon
DTS
Outlook: Further Reliability Improvements
• DTS (Die-Top System)– Heraeus indicates an increased power cycling
capability by a factor of 50 compared to soldered die with Al wire interconnection
• Comparison done on substrate level, i.e. DBC with attached die
• Wire-less interconnections– Adds new path for power dissipation
– Shorter connections
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Cu foilNiPdAu platingSinter PasteDie
Cu interconnectInsulation filmDieDBC
Source: Heraeus
Summary
• Long-term reliability of power modules depend strongly on the temperature rises when operating the module. Thermal management is critical for designing modules that meet defined reliability requirements
• Thermal management is not only about removing the heat from the module, but also providing thermal capacitances within the module design to smoothen out short-term spikes
• Modern mounting techniques reduce the burden on thermal management, but they don’t eliminate the need for thorough analysis
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