'US-Japan Seminar on Dielectric and Piezoelectric Ceramics ... · DCBiasandTemperatureEffects, A....

$: 'US-Japan Seminar on Dielectric and Piezoelectric Ceramics ... · DCBiasandTemperatureEffects, A. Amin.L. C. Lim\andT. S.Ramotowski,Naval UnderseaWarfareCenter,USA,AOfficeofNavalResearch,USA,and'NationalUniversity$
The l(fh US-Japan Seminar on

Dielectric and Piezoelectric Ceramics

PROGRAM SUMMARY

and

EXTENDED ABSTRACTS

General Chairs: Shoko Yoshikawa, Active Control eXperts, Inc./Div. of Cymer, USA

Yukio Sakabe, Murata Manufacturing Co., Ltd., Japan

Program Chairs: Susan Trolier-McKinstry, Perm State University, USA

Masatoshi Adachi, Toyama Prefectural University, Japan

Sponsored by:

Office ofNaval Research

Shoei Chemical Co.

Additional Supportfrom:

Asian Office ofAerospace Research and Development(US Air Force Office ofScientific Research)

Ferro Corporation

September 26-29, 2001

The Providence Biltmore Hotel

Providence, Rhode Island, USA

10th US-Japan Seminar on Dielectric and Piezoelectric Ceramics

September 26-29, 2001

Providence, Rhode Island, USA

PROGRAM

Wednesday, September 26

5:00 - 7:30 p.m. Registration7:30 - 9:00 p.m. Welcome Reception

Thursday, September 27

7:00-8:00 am. Registration

8:00 - 8:15 a.m. Introduction and Welcome: Shoko Yoshikawa, US General Chair, and Yukio

Sakabe, Japan General Chair

SESSION I. DIELECTRICS

Session Chair: Noboru Ichinose, Waseda UniversityClive Randall, Penn State University

8:15 - 9:15 am. Plenary Lectures - Dielectricsfor RFApplications

PI. 1 8:15- 8:45 a.m. Multilayer Ceramic Integrated Materials Systems for Wireless, Energy 1

and Life Science Micro-System Applications, David L. Wilcox. Sr. and

S. Dai, Motorola Laboratories, USA.

PI.2 8:45 -9:15 a.m. Progress of Dielectric Resonator Materials for Microwave and Millimeter- 9

Wave Applications, Hiroshi Tamura. Murata Manufacturing Company,Ltd., Japan

9:15 - 9:30 am. Break

9:30 a.m.-Noon Poster Summaries and Poster Viewing

Multilayer Capacitors

1.1 Ultra-thin Ni-compatible X7R Dielectric Based on Alkoxide Derived Barium Titanate, 15

P. Pinceloup, I. Burn. K. Albertsen, T. Ohba, and J. Roelofsma, DMC2, USA.

1.2 Hydrothermal BaTi03 Based High K, Low Loss Dielectrics for Thin Active Layer BME 19

MLCC Applications, S. Venigalla. D. L. Schultz, and J. A. Kerchner, Cabot Corporation,USA.

1.3 BME X7R and Y5V Dielectrics for Thin Layer MLC Applications, H. Park. D. McCauley, 23

M. Megherhi, M. Chu, and E. Davis, Ferro Electronic Materials, USA.

i


Multilayer Capacitors, continued

1.4 Physical and Electrical Properties of Low Fired K-3800 X8R Dielectric, G. H. Maher and 27

S. C. Maher, MRA Laboratories, USA.

1.7 Development of 100% Silver Compatible Dielectric Compositions for High Performance 31

Discrete and Integrated Passive Component Applications, B. Foster. W. Symes, E. Davis,M. Creedon, J. Bonistall, P. Pruna, J. Burton, and S. Witter, Ferro Electronic Materials,USA.

Capacitors: Reliability andDiffusion

1.8 Effect of Milling Process on Core-shell Microstructure and Electrical Properties for BaTi03- 35

based Ni-MLCC, Y. Mizuno, T. Hagiwara, H. Chazono, and H. Kishi, Taiyo Yuden

Company, Ltd., Japan.

1.9 Reliability of Base Metal Electrode Multilayer Ceramic Capacitors, L. A. Mann. J. J. Beeson, 39

M. S. Randall, J. L. Paulsen, and E. K. Reed, KEMET Electronics Corporation, USA.

1.10 Effect of Occupational Sites of Rare-earth Elements on Dielectric Properties ofBaTi03, 43

H. Kishi. N. Kohzu, H. Chazono, J. Sugino*, H. Ohsato*, and T. Okuda*, Taiyo Yuden

Company, Ltd., *Nagoya Institute ofTechnology, Japan.

1.11 Cation Diffusion in Barium Titanate, J. Itoh. I. Yashima, N. OhashiA, I. SakaguchiA, 47

H. HanedaA, and J. TanakaA, Mitsui Mining & Smelting Company, Ltd., Japan, ANational

Institute for Materials Science, Japan.

1.12 Oxygen in Diffusion and Defect Structure in Perovskite Oxides, I. Sakaguchi. H. Haneda, 51

S. Hishita, N. Ohashi, and M. Sekita, National Institute for Materials Science, Japan.

10-minute Break

Materials Development

1.13 Transmission Electron Microscopy Investigation ofBi203-ZnO-Nb20s Pyrochlore and 55

Related Phases, J. C. Nino. I. M, Reaney*, M. T. Lanagan, and C. A. Randall, Center for

Dielectric Studies, Perm State University, USA, *Dept. ofEngineering Materials, Universityof Sheffield, U.K.

1.14 Bi-pyrochlore Materials for Microwave Applications, C. A. Randall. M. T. Lanagan, 59

H-J. Youn, I. Reaney, H. Sogabe, J. Nino, A. Baker, and T. Shrout, Penn State University,USA.

1.15 Dielectric and Ferroelectric Properties of (Ag,Li)(Nb,Ta) Ceramics, Y. Sakabe. T. Takeda, 63

Y. Ogiso, and N. Wada, Murata Manufacturing Company, Ltd, Japan.

ii


Film Capacitors

1.16 Ba(TixZri.x)03 Film as Dielectric for Capacitor Applications, B-H.Tsao. S. Heidger*, and 67

J. A. Weimer*, University of Dayton Research Institute, *Air Force Research Laboratory,Wright-Patterson Air Force Base, USA.

1.17 Dielectric Properties of Perovskite Superlattices Measured Using Fine Planar Electrodes, 71

T. Tsurumi. T. Ichikawa, T. Harigai, and S. Wada, Tokyo Institute ofTechnology, Japan.

1.18 Initial Results for MOCVD (Ba,Sr)Ti03 Thin Film Capacitors on Metal Foils, 75

D. Y. Kaufman*, S. K. StreifferA. J. ImAt, S. SahaA, O. AucielloA, and R. Erck*,

Argonne National Laboratory; *Energy Techology Division, AMaterials Science Division

,fnow of Agere Systems, USA.

High Frequency and Tunable Dielectrics

1.19 Measurement of Dielectric Properties of BaTi03-Based Materials in the 10 MHz to 1GHz 79

Frequency Range, C. Nies. E. Deyneka, and M. T. Lanagan*, AVX Corporation, USA,Perm State University, USA.

1.20 Microwave Properties ofDielectric Oxide and High Tc Superconductor System, S. Sugihara. 83

T. Kawashima, C. Ishizuka, andN. Kimura, Shonan Institute ofTechnology, Japan.

1.21 Double-Layer Type Microwave Absorber Made ofMagnetic-Dielectric Composite Material, 87

M. Saitoh, T. Yamamoto. H. (Okino) Niori, M. Chino, and M. Kobayashi*, National Defense

Academy, *Tayca Company, Japan.

1.22 Progress in BaTi03 Thin Films: High Frequency Applications and Property Investigations, 91

J-P. Maria. C. B. Parker, F. Ayguavives, A. Tombak, G. Stauf, A. Mortazawi, and

A. I. Kingon, North Carolina State University, USA, *ATMI Corporation, USA.

1.23 Application of Ferroelectrics in Microwave Phased-Array Antennas, J. B. L. Rao, 95

P. P. Patel. P. K. Park*, T. K. Dougherty*, J. A. Zelik*, A. MoffatA, and L. C. Research

Sengupta+, Naval Laboratory, *Raytheon Systems Company, ASFA, Inc., and +Paratek

Microwave, Inc., USA.

1.24 Field Dependence of Dielectric Properties of(Pb,Sr)Ti03 Thin Films, M. Adachi. K. Tsu, 99

and T. Karaki, Toyama Prefectural University, Japan.

Noon to 1:00 p.m. Lunch

m

SESSION H. MEMORY

Session Chair: Takaaki Tsurumi, Tokyo Institute ofTechnologyAngus Kingon, North Carolina State University

1:00- 2:00p.m. Plenary Lectures -Memory ApplicationsPage

PII.l 1:00 - 1:30 p.m. Material Processing Requirements for Ferroelectric Non-Volatile Memory 103

(FRAM) Technology, Glen R. Fox. R. Bailey, B. Kraus, F. Chu, S. Sun,

and T. Davenport, Ramtron International Corporation, USA.


PII.2 1:30 - 2:00 p.m. Recent Study on Ferroelectric Thin Films and Their Applications, 109

Tadashi Shiosaki and S. Okamura, Nara Institute of Science and

Technology (NAIST), Japan.

2:00-2:15p.m. Break

2:15 - 5:00 p.m. Poster Summaries and Poster Viewing

Memory

11.25 A Novel Fabrication Process of Ferroelectric Capacitors with the Self-align Patterning of 115

Top Electrodes, S. Okamura. T. Kobayashi, K. Suzuki, and T. Shiosaki, Nara Institute of

Science and Technology, Japan.

11.26 Preparation and Properties of SrBi2Ta209 Ferroelectric Thin Films Using Excimer UV 119

Irradiation, T. Havashi. and D. Togawa, Shonan Institute of Technology, Japan.

11.27 Chemical Processing and Ferroelectric Properties of MBi4Ti40i5 (M:Alkaline Earth Metals) 123

Thin Films, K. Kato**. K. Suzuki*, K. Nishizawa*, and T. Miki*, *National Institute of

Advanced Industrial Science and Technology, Japan, "''Frontier Collaborative Research

Center, Tokyo Institute of Technology.

11.28 Integration and Characterization of Sub-micron MFIS FETs Transistor with Pt/Pb5Ge3Oi (/ 127

High-k/Si Structure, F. Zhang and S. T. Hsu, Sharp Laboratories, USA.

11.29 Low Temperature Deposition of Epitaxial-Grade PZT Films by MOCVD, H. Funakubo. 131

M. Aratani, T. Oikawa, and K. Saito*, Tokyo Institute of Technology, Japan, *Philips JapanLtd., Japan.

11.30 Retention Properties in Single-crystalline PLZT Thin Film Capacitors, N. Kamehara. 135

M. Kurasawa, and K. Kurihara, Fujitsu Laboratories, Ltd., Japan.

IV


Film Deposition

II.31 Synthesis and Properties of Tungsten Bronze (Sr,Ba)(Nb,Ta)206 Thin Films by the 139

Chemical Solution Deposition, W. Sakamoto. Y. Horie, T. Yogo, and S. Hirano, Nagoya

University, Japan.

MEMS

11.33 Electrical Properties ofPbZr03Thin Films Prepared by Chemical Solution Deposition, 143

H. Maiwa and N. Ichinose*, Shonan Institute of Technology, Japan, *Waseda University,

Japan.

11.34 Microelectrornechanical Systems (MEMS) Accelerometers Using Lead Zirconate Titanate 147

Thick Films, L. P. Wang*, R. Wolf*, K. DengA, L. ZouA, Y. Wang*, P. WlodkowskiA,R. J. Davis*, and S. Trolier-McKinstrv*. *Penn State University, USA,A Wilcoxon

Research, USA.

11.35 Piezoelectric Properties of Pb(Ybi/2Nbi/2)03-PbTi03 Epitaxial Films with (100) and (111) 151

Orientation, T. Yoshimura and S. Trolier-McKinstry, Penn State University, USA.

11.36 Preparation ofTexture Controlled Lead Zirconate Titanate Diaphragm Type Film Actuator, 155

T. Iiiima. B. P. Zhang, and K. Kunii*, Tohoku National Industrial Research Institute, Japan,*NIDEC COPAL Corporation, Japan.

10-minute Break

Fundamentals

11.37 Why the Atomic Structure Matters to Dielectric and Piezoelectric Performance, 159

T. Eeami. University of Pennsylvania, USA.

11.38 Polarization Relaxation in Piezoelectric OJPtyMgiaNbMPr-O.SPbTiO:,, P. Viehland. 161

Naval Seasystems Command, USA.

11.39 Statistical Model for Poling Hard PZT, W. A. Schulze and M. K. Jha, Alfred University, 165

USA.

11.40 Electric Field Effects on Dielectric Properties of MPB PZT Ceramics via Monoclinic 169

Distortion at Low Temperatures, R. Guo. E. Alberta, A. Thomas, B. A. Jones, and

L. E. Cross, Perm State University, USA.

11.41 Harmonic Analysis of the Electro-Mechanical Response ofElectroactive Materials, 173

C. B. DiAntonio, F.A. Williams, Jr., and S. M. Pilgrim. Alfred University, USA.

II.42 Calculation of Electrostrictive Coefficients and Their Complex Nature Through Fourier 177

Analysis, C. B. DiAntonio, F. A. Williams, Jr., S. M. Pilgrim. Alfred University, USA.

v


Fundamentals, continued

11.44 Visualization of the Domain Orientation in PbTi03 Single Crystals by Vertical and 181

Lateral Piezoresponse Microscopy, H. COkino") Niori. T. Ida, H. Ebihara, and

T. Yamamoto, National Defense Academy, Japan.

11.45 Domains and Piezo Images of PZT Family Thin Films Observed by AFM and KFM, 185

Y. Masuda. K. Kakimoto^ S. Fujita, and K. Watanabe*, Hachinohe Institute of

Technology, Japan, ^agoya Institute of Technology, * Seiko Instrument Company,

Japan.

11.46 Progress in Flexoelectric Measurements, L. E. Cross and W. Ma, Perm State University, 189

USA.

7:00 p.m.- 9:00p.m. Dinner Banquet

Friday, September 28

SESSION m. PIEZOELECTRICS

Session Chair: Tadashi Shiosaki, Nara Institute ofScience and Technology

Yet-Ming Chiang, Massachusetts Institute ofTechnology

8:30 - 9:30 a.m. Plenary Lectures - Piezoelectrics

PHI. 1 8:30 - 9:00 a.m Domain Contribution to the Piezoelectric Properties of PZT Ceramics, 193

Takaaki Tsurumi and S. Wada, Tokyo Institute of Technology, Japan.

PIII.2 9:00 - 9:30 am New High Temperature Morphotropic Phase Boundary Piezoelectrics 201

Based on Bi(Me)03-PbTi03 Ceramics, R. Eitel", C. A. Randall', T. R.

Shrouf, P. W. RehrigA, Wesley HackenbergerAt and S. Park*, "Perm State

University, ATRS Ceramics, Inc., and *Fraunhofer Technology Center,USA.

9:30 - 9:45 cm Break

9:45 a.m-Noon Poster Summaries and Poster Viewing

Sinsle Crystal Piezoelectrics

111.47 Growth and Properties of 3" Single Crystal of Piezoelectric Pb[(ZnI/3Nb2/3)o 9iTi0,o9]03, 209

M. Matsushita. Y. Tachi, S. Nagata, and K. Echizenya*, Kawatetsu Mining Company, Ltd.,

Japan, *Kawasaki Steel Company, Ltd., Japan.

111.48 Electromechanical Response of [001] Oriented Single Crystal Lead Zinc Niobate Titanate: 213

DC Bias and Temperature Effects, A. Amin. L. C. Lim\ and T. S. Ramotowski, Naval

Undersea Warfare Center, USA, AOffice ofNaval Research, USA, and 'National Universityof Singapore, Singapore.

VI


Sinsle Crystal Piezoelectrics. continued

111.49 Crystal Growth and Electrical Properties of High Tc Relaxor-based Single Crystals, 217

N. Ichinose, Y. Saigo, Y. Hosono*, and Y. Yamashita*, Waseda University, Japan,Toshiba Company, Japan.

111.51 Recent Progress of Growth of Ferroelectric Relaxor PMN-PT Single Crystals at SICCAS, 221

W.A. Schulze. C. Feng*, and Z. Yin*, C. B. DiAntonio, F. A. Williams, Jr., and S. M. Pilgrim,Chinese Academy of Sciences, China, Alfred University, USA.

111.52 Compressive Properties ofPiezoelectric Single Crystals, L. Ewart and E. A. McLaughlin. 225

Naval Undersea Warfare Center, USA.

111.53 Effects of Surface Condition on the Electrical and Chipping Properties of PZNT Single 229

Crystal Vibrators for Medical Array Transducers, T. Kobavashi. Y. Hosono, M. Izumi,K. Itsumi, K. Harada, and Y. Yamashita, Toshiba Company, Japan.

111.54 New Orientation Cuts for Enhanced Electromechanical Properties ofPMN-PT and 233

PZN-PT Single Crystals, J. Chen. R. Panda, H. Beck, and R. Gururaja, ImagingSystems, Agilent Technologies, Inc., USA.

111.55 Domain Configuration and Polarization Switching in PZN-5%PT Crystals, S. E Parkf. 237

J. K. Lee*, and K. S. Hong*, *Seoul National University, Korea, ^raunhofer-IBMT

Technology Center, USA.

111.56 Domain Dynamics and Microstructure ofPbtZniaNbagJOrPbTiOs Single Crystals, 241

E. Furman. H. Yu, and C. A Randall, Penn State University, USA.

111.57 Poling Field Dependence ofFerroelectric Properties in Pb (Zni/3Nb2/3)o,9iTi0.o903 Single 245

Crystal, T. Ogawa. M. Matsushita', Y. Tachi", and K. Echizenya*, Shizuoka Institute of

Science and Technology, Japan, "Kawatetsu Mining Company, Ltd., Japan, *Kawasaki Steel

Company, Ltd., Japan.

10-minute Break

111.58 Piezoelectric Properties ofKNb03 Single Crystals with Various Crystallographic 249

Orientations, S, Wada. A. Seike, H. Kakemoto, and T. Tsurumi, Tokyo Institute of

Technology, Japan.

111.59 The Study ofFatigue Anisotropy in Pb(Zni/3Nb/2a)03-PbTi03 Ferroelectric Single 253

Crystals, M. Ozeul*. K. Takemuraf, S. Trolier-McKinstry*, and C. A Randall*,

fNEC Corporation, Japan, *Penn State University, USA.

111.60 Phase Transitional Behavior of the Morphotropic Phases in PZN-PT and PMN-PT 257

Single Crystals, Y. Lu, D.-Y. Jeong, Z.-Y. Cheng, and P.M. Zhang. Penn State University,USA.

VH


Non-Pb Based Actuator Materials

111.61 Electrical Properties of Morphotropic Phase Boundary in (Bii/2Nai/2)Ti03-KNb03 Solid 261

Solution System, T. Takenaka. H. Nagata, and H. Ishii, Science University of Tokyo,Japan.

111.62 Shaped Growth of Oriented Single Crystal Rods and Fibers in the (Bii/2Nai/2)i.xBaxZryTi|.y03 265

(BNBZT) System, B.P. Nunes, J. Shen, A. N. Soukhojak, Y-M. Chiang. Massachusetts

Institute of Technology, USA.

111.63 High Electrostrictive Strain Relaxors Based on Sodium Bismuth Titanate, S. A. Sheets, 269

A. N. Soukhoiak. N. Ohashi, and Y-M. Chiang, Massachusetts Institute of Technology,USA.

111.65 Weak Field Permittivity and High-Field Electromechanical Characterization ofFerroelectric 273

Ceramics at Cryogenic Temperatures, C. J. Pagoda, M. L. Mulvihill*, and S. M. Pilgrim,Alfred University, USA, *Xinetics, USA.

Lead-Containing Actuator Materials

111.66 Cryogenic Characterization of Perovskite Pb(Mg0.BNio.2)i/3Ta2/303 and Tetragonal 277

Tungsten Bronze Ba6FeNb903o and Ba6CoNb903o Relaxor Ferroelectrics, C. J. Pagoda.

and S. M. Pilgrim, Alfred University, USA.

111.67 Piezoelectric Properties of Transparent Pb(Nii/3Nb2/3)i-x.yZrxTiy03 Ceramics, E. F. Alberta 281

and A.S. Bhalla. Penn State University, USA.

111.68 Low-temperature Sintering of PZT with LiBi02 as a Sintering Aid, T. Hayashi and 285

J. Tomizawa, Shonan Institute of Technology, Japan.

111.69 Fracture Behavior of Ferroelectric Ceramics, C. S. Lynch. Georgia Institute of Technology, 289

USA.

Noon to 1:00p.m. Lunch

SESSION IV. PROCESSING

Session Chair: Tadashi Takenaka, Science University ofTokyoShoko Yoshikawa, Active Control eXperts, Inc./Div. ofCymer

1:00 - 2:00p.m. Plenary Lectures - Novel Processing

PIV.l 1:00 - 1:30 p.m. Texture Engineering and Enhanced Properties of Piezoelectric and 293

Dielectric Bulk Ceramics, Toshihiko Tani. Toyota Central R&D

Laboratories, Inc., Japan.

viii


PIV.2 1:30-2:00 p.m Micropen Direct Write Fabrication of Integrated Electroceramic Devices, 301

Duane Dimos. P. G. Clem, N. S. Bell, K. VanHeusden', R. Parkhill*, and

K. Church*, Sandia National Laboratories, USA, 'Superior Micropowders,

USA, *Sciperio, Inc., USA.

2:00-2:15P.m Break

2:15 - 5:00p.m Poster Summaries andPoster Viewing

Piezoelectric Devices

IV.71 Cymbal and BB Underwater Transducers and Arrays, R. E. Newnham. J. Zhang, S. Alkoy, 305

R. Meyer, W. J. Hughes, A. C. Hladky-Herrion, J. Cochran, and D. Markey, Penn State

University, USA.

IV.72 Design and Modeling ofPorous FGM Piezoelectric Actuators, A. Almajid, M. Tava. K. 309

Takagi*, J.-F. Li*, R. Watanabe*, *Tohoku University, Japan, University of Washington,USA.

IV.73 Piezoelectric Ceramic Transducers for Miniaturized Applications, A. I. Kingon. A. 313

Gruverman, J. F. Mulling, D. J. Kim, J. P. Maria, J. A. Palmer, E. Grant, and P. Franzon,

North Carolina State University, USA.

IV.74 Advanced Sonar Technologies for 21st Century Torpedoes, J. G. Kelly, G. T. Stevens, 317

and F. Nussbaum*. Naval Undersea Warfare Center, USA, *ANTEON, USA.

IV.75 Active and Passive Structural Vibration Control using Piezoelectric Ceramics, S. Yoshikawa. 319

and M. Giovanardi, Active Control eXperts, Inc., A Division ofCymer, USA.

IV.76 Large Displacement Piezoelectric Actuators Using Shear, M. T. Strauss. HME, USA. 323

Textured Piezoelectrics

IV.77 Templated Grain Growth of Textured Piezoelectric Ceramics, S. T. Kwon, E. M Sabolsky, 327

G. L. Messing, and S. Trolier-McKinstry, Penn State University, USA.

IV.78 Single Crystal Ferroelectrics from Polycrystalline Precursors, A. M. Scotch, E. P. 331

Gorzkowski, P. T. King, and D. J. Rockosi, S. Wu, M. P. Harmer. and H. M. Chan,

Lehigh University, USA.

IV.79 Grain Orientation in BNKT-PZT Solid Solutions Made by RTGG Method, T. Kimura. 335

and Y. Abe, Keio University, Japan.

IV.80 Processing and Application of Solid State Converted High Strain Undersea Transmitting 339

Materials, K. McNeal. R. Gentilman, K. Ostreicher, and D. Fiore, Materials Systems, Inc.,

USA.

IX


IV.81 Templated Grain Growth of Textured PMN-PT Utilizing Phase Compatible Seed Materials, 343

P. W. Rehrig'. W. S. Hackenberger", J. H. Adair, and T. R Shrout, Penn State University,

USA, TRS Ceramics, Inc., USA.

IV.82 Extruded Electroactive "Single Crystal" Fibers, M. R. Pascucci. H. B. Strock, and P. 347

Bystricky CeraNova Corporation, USA.

IV.83 Textured Piezoelectric Materials Fabricated by Templated Grain Growth, M. M. Seabaugh. 351

G. L. Cheney, K. Hasinska, A. M. Azad, S. L. Swartz, and W. J. Dawson, NexTech Materials,

Ltd., USA.

10-minute Break

Powders and Consolidation

IV.84 Preparation of run-sized BaTi03 Fine Particles Using a New 2-step Thermal Decomposition 355

of Barium Titanyl Oxalates, S. Wada. M. Narahara, and H. Kakemoto, and T. Tsurumi,

Tokyo Institute ofTechnology, Japan.

IV.85 A Highly Distorted Perovskite Phase in a PMN-PT Powder Synthesized via the Modified 359

Columbite Method, H. Yamada. Cerone. Inc., USA.

IV.86 The Formation of PLZT from Oxides During Calcination, J. P. Dougherty. E. Breval, 363

M. Klimkiewicz, and J. D. Weigner', Penn State University, USA, 'Lockheed Martin,USA.

IV.87 Synthesis ofNanosized Pb(Zr0.7,Tio.3)03 Particles via Mechanical Activation, X. Liu and 367

R. E. Riman, Rutgers University, USA.

Net Shape Forming

IV.88 Layered Manufacturing for Prototyping of Net Shape Grain Oriented Piezoelectric Materials, 371

M. Allahverdi, K. Nonaka, and A. Safari. Rutgers University, USA.

IV.89 Robocast 3-3 PZT-5H - Polymer Composites, B. ATuttle. J. E. Smay, J. Cesarano, III, 375

M.F. Bourbina, E. L. Venturini, D. H. Zeuch, W. R. Olson, J. S. Wheeler, and J. A. Voigt,Sandia National Laboratories, USA.

Conductors

IV.91 Microstructure and Grain Boundary Effects on the High-field Electrical Properties ofPTCR 379

Barium Titanate, P. Cann. C. T. Chao, and R. B. Gall, Iowa State University, USA.

X

Saturday, September 29

SESSION V

Session Chair: Yukio Sakabe, Murata Manufacturing Company, Ltd.

Susan Trolier-McKinstry, Penn State University

9:00 -11:00 am. Plenary Lectures

PV. 1 9:00 - 9:30 a.m. Integrated Passive Device Thin Film, Thick Film and Disruptive 383

Technology for Wireless and High Speed Signal Processing

Applications, Robert H. Heistand. II. J. L. Galvagni, A. P. Ritter,

R. M. Kennedy III, and G. Korony, AVX Corporation, USA.

PV.2 9:30 - 10:00 am. Micromachined Capacitor Ultrasonic Transducers, B. T. Khuri-Yakub. 391

M. Karaman, C.-H. Cheng, S. Ergun, G. Yaralioglu, B. Bayram, U.

Demerci, S. Hansen, M. Badi, and O. Oralkan, Stanford University, USA.

PV.3 10:00 - 10:30 tm Recent Developments in Dielectrics and Piezoelectrics in Europe, 401

Andrew J. Bell. Leeds University, UK.

PV.4 10:30- 11:00 a.m. Three-Dimensional Analysis of Inverted Domain Structures in LiNb03 409

by SHG Interference Microscope, Y. Uesu. H. Shibata, and Y. Shindoh,Waseda University, Japan.

11:00-11:30 cm. Break

11:30 cum. - 1:00p.m. Farewell Lunch

XI

SESSION I. DIELECTRICS

Plenary Lectures- Dielectricsfor RFApplications

PI. 1 Multilayer Ceramic Integrated Materials Systems for Wireless, Energy, and Life 1

Science Micro-System Applications, David L. Wilcox. Sr. and S. Dai, Motorola

Laboratories, USA.

PI.2 Progress ofDielectric Resonator Materials for Microwave and Millimeter-Wave 9

Applications, Hiroshi Tamura. Murata Manufacturing Company, Ltd., Japan

Multilayer Capacitors

1.1 Ultta-thin Ni-compatible X7R Dielectric Based on Alkoxide Derived Barium 15

Titanate, P. Pinceloup, I. Burn. K. Albertsen, T. Ohba, and J. Roelofsma, DMC2,

USA.

1.2 Hydrothermal BaTiQj Based High K, LowLoss Dielectrics for Thin Active Layer 19

BME MLCC Applications, S. Venigalla. D. L. Schultz, and J. A. Kerchner, Cabot

Corporation, USA.

1.3 BME X7Rand Y5V Dielectrics for Thin Layer MLC Applications, H. Park. D. 23

McCauley, M. Megherhi, M. Chu, and E. Davis, Ferro Electronic Materials, USA.

1.4 Physical and Electrical Properties ofLow Fired K-3 800 X8R Dielectric, G.H. 27

Maher and S. C. Maher, MRA Laboratories, USA.

1.7 Development of 100% Silver Compatible Dielectric Compositions for High 31

Performance Discrete and Integrated Passive Component Applications, B. Foster.

W. Symes, E. Davis, M. Creedon, J. Bonistall, P. Pruna, J. Burton, and S. Witter,

Ferro Electronic Materials, USA.

Capacitors: Reliability and Diffusion

1.8 Effect ofMilling Process on Core-shell Microstructure and Electrical Properties for 35

BaTiCVbased Ni-MLCC, Y. Mizuno. T. Hagiwara, H. Chazono, and H. Kishi,

Taiyo Yuden Company, Ltd., Japan.

1.9 Reliability of Base Metal Electrode Multilayer Ceramic Capacitors, L. A. Mann, 39

J. J. Beeson, M. S. Randall, J. L. Paulsen, and E. K. Reed, KEMET Electronics

Corporation, USA.

1.10 Effect of Occupational Sites ofRare-earth Elements on Dielectric Properties of 43

BaTi03, H. Kishi. N. Kohzu, H. Chazono, J. Sugino*, H. Ohsato*, and T. Okuda*,

Taiyo Yuden Company, Ltd., *Nagoya Institute of Technology, Japan.

1.11 Cation Diffusion in Barium Titanate, J. Itoh. I. Yashima, N. OhashiA, I. SakaguchiA, 47

H. HanedaA, and J. TanakaA, Mitsui Mining & Smelting Company, Ltd., Japan,

ANational Institute for Materials Science, Japan.

1.12 Oxygen in Diffusion and Defect Structure in Perovskite Oxides, I. Sakaguchi. 51

H. Haneda, S. Hishita, N. Ohashi, and M. Sekita, National Institute for Materials

Science, Japan.

Materials Development

1.13 Transmission Electron Microscopy Investigation of Bi203-ZnO-Nb205 Pyrochlore 55

and Related Phases, J. C. Nino. I. M. Reaney*, M. T. Lanagan, and C. A. Randall,

Center for Dielectric Studies, Penn State University, USA, *Dept. of Engineering

Materials, University of Sheffield, U.K.

1.14 Bi-pyrochlore Materials for Microwave Applications, C. A. Randall. M. T. Lanagan, 59

H. J. Youn, I. Reaney, H. Sogabe, J. Nino, A. Baker, and T. Shrout, Penn State

University, USA.

1.15 Dielectric and Ferroelectric Properties of (Ag,Li)(Nb,Ta) Ceramics, Y. Sakabe. 63

T. Takeda, Y. Ogiso, and N. Wada, Murata Manufacturing Company, Ltd,

Japan.

Film Capacitors

1.16 Ba(TixZri.x)03 Film as Dielectric for Capacitor Applications, B-H.Tsao. S. Heidger*, 67

and J. A. Weimer*, University of Dayton Research Institute, *Air Force Research

Laboratory, Wright-Patterson Air Force Base, USA.

1.17 Dielectric Properties of Perovskite Superlattices Measured Using Fine Planar 71

Electrodes, T. Tsurumi. T. Ichikawa, T. Harigai, and S. Wada, Tokyo Institute

of Technology, Japan.

1.18 Initial Results for MOCVD (Ba,Sr)Ti03 Thin Film Capacitors on Metal Foils, D. Y, 75

Kaufman*, S. K. StreiffeiA J. ImAt, S. SahaA, O. AucielloA, and R. Erck*, Argonne

National Laboratory; *Energy Techology Division, AMaterials Science Division,

*now of Agere Systems, USA.

High Frequency and Tunable Dielectrics

1.19 Measurement of Dielectric Properties of BaTi03-Based Materials in the 10 MHz to 79

1GHz Frequency Range, C. Nies. E. Deyneka, and M. T. Lanagan*, AVX

Corporation, USA, *Penn State University, USA.

1.20 Microwave Properties ofDielectric Oxide and High Tc Superconductor System, 83

S. Sugihara. T. Kawashima, C. Ishizuka, and N. Kimura, Shonan Institute of

Technology, Japan.

1.21 Double-Layer Type Microwave Absorber Made of Magnetic-Dielectric Composite 87

Material, M. Saitoh, T. Yamamoto. H. (Okino) Niori, M. Chino, and M. Kobayashi*,

National Defense Academy, *Tayca Company, Japan.

1.22 Progress in BaTi03 Thin Films: High Frequency Applications and Property 91

Investigations, J-P. Maria. C. B. Parker, F. Ayguavives, A. Tombak, G. Stauf*,

A. Mortazawi, and A. I. Kingon, North Carolina State University, USA,

*ATMI Corporation, USA.

1.23 Application of Ferroelectrics in Microwave Phased-Array Antennas, J. B. L. Rao, 95

P. P. Patel. P. K. Park*, T. K. Dougherty*, J. A. Zelik*, A. MoffatA, and L. C.

Sengupta+, Naval Research Laboratory, *Raytheon Systems Company, ASFA, Inc.,

and "^Paratek Microwave, Inc., USA.

1.24 Field Dependence ofDielectric Properties of (Pb,Sr)Ti03 Thin Films, M. Adachi. 99

K. Tsu, and T. Karaki, Toyama Prefectural University, Japan.

'US-Japan Seminar on Dielectric and Piezoelectric Ceramics ... · DCBiasandTemperatureEffects, A....

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