University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics...
-
date post
21-Dec-2015 -
Category
Documents
-
view
214 -
download
0
Transcript of University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics...
![Page 1: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/1.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
VLSI electronics for the read-out of radiation sensors
Angelo Rivetti – INFN - Torino
![Page 2: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/2.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Topics
Introduction
Architectures for read-out ASICs
Why deep submicron CMOS?
A detailed example: the ALICE SDD front-end
![Page 3: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/3.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Why integrated ?
Historically, dedicated integrated circuits came into play in nuclear electronics with the advent of silicon detectors. Nowadays they are used to read-out most radiation detectors, including gas detectorsThe possible use of APDs as an alternative to PMTs further increase the range of application of custom integrated I.Cs. The use of I.Cs is motivated by the need of reading many channels minizing material and power consumption
![Page 4: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/4.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
The LHC scaleThe LHC detectors need an unprecedented number of electronicschannels…
![Page 5: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/5.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
ALICE
Silicon pixels: 0.2 m2, 9.3MchSilicon drift: 1.3m2, 133kchSilicon strip: 4.9m2, 2.6MchTPC: Volume 88m3, 1Mch … and many others…
![Page 6: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/6.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
ATLAS & CMSIn term of number of channels, ALICE is dwarfed by ATLAS & CMS
CMS210m2 silicon microstrip sensors9.6 Mch
ATLAS61m2 silicon microstrip sensors6.3 Mch
![Page 7: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/7.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
A detector example
You have to read-out something like this….(SDD of ALICE)
Many independent channelshave to be read
![Page 8: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/8.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Basic design choices
From system specs to
Selection of the architecture
System partitioning
Technology choice
![Page 9: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/9.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Architecture selection (1)
Analog read-out
+ No info loss Amplitude preserved Easier to debug
S&H
- Big amount of data Analog data handling
Very common for the read-out of silicon microstrip
![Page 10: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/10.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Analog read-out example
The APV chip for the CMS tracker128 analog channelsPreamp & analog pipelineAnalog deconvolution processorCMOS 0.25m technology46.8 mm2
2mW/channel
Reference:L.L Jones et al.The APV25 Deep Submicron ReadOut Chiphttp://lebwshop.home.cern.ch/lebwshop/LEB99_Book/Tracker/Jones.pdf
![Page 11: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/11.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Architecture selection (2)
Binary read-out
+ Simple Fast Minimum amount of data
- No information on
amplitude More difficult to debug
VTH
Standard for the read-out of pixel detectors Common also for strip detectors
![Page 12: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/12.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Binary read-out example
The ABCD chip for the ATLAS microstrip128 channelsPreamp & discriminatorDigital pipeline46.8 mm2
2mW/ch
BiCMOS 0.8m rad-hard Reference:W. Dabrowski et al.Design an performance of the ABCD chip for the binary readout of silicon strip detectors in the ATLAS semiconductor trackerIEEE TNS, vol. 47, no. 6, Dec. 2000
![Page 13: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/13.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Architecture selection (3)
Mixed-mode readout
+ No information loss Robust
- Large data volume Mixed-mode IC more
difficult to design
We will see more on this later…
ADC
![Page 14: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/14.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Mixed-mode readout example
The ALTRO chip for the ALICE TPC16 ADCEmbedded digital processingDigital tail cancellationCMOS 0.25m technology64 mm2
16mW/ch @ 10 MSPSPreamp on a separate IC
Reference:R. Esteve Bosch, L. Musa, et. alThe ALTRO chip: A 16 Channel A-D converter and digital processor for Gas DetectorsIEEE NSS – MIC, Norfolk, Nov. 2002.
![Page 15: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/15.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Why deep-submicron CMOS ?
CMOS already popular in the design of front-end
vnoise2Ct
2K2(n)ENC2 = inoise
2K1(n)s + s
Bipolar traditionally better at short shaping time,due to the base current shot noise
![Page 16: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/16.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Process trends in CMOS technologies
Year 1992 1995 1999 2001 2003
Minimum size(m)
0.5 0.35 0.25 0.18 0.13
Tox (nm) 9-12 7-10 5-7 3-4 2-3
Metal levels 4 5 6 7 8
Supply (V) 3.3-5 2.5-3.3 2.5-3.3 1.8-2.5 1.2-1.8
Waferdiameter (mm)
200 200 200 300 300
![Page 17: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/17.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Interconnection example
![Page 18: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/18.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Digital vs analog
The scaling of CMOS technologies is driven by the need of improving the perfomance of digital ICs The need of analog design not taken too much into account Analog features come usually later Digital circuits improve with scaling, but what about analog ones?
![Page 19: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/19.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Analog properties and process scaling: (1)
tOX scales, k=Cox =OX/tOX scales => for the same W /L andthe same current gm improves
Lmin (m) tox (nm) k (A/V2)
1.2 24 68
0.8 14 90
0.5 10 134
0.25 5 280
k for different technologies (NMOS devices)
gm = 2 n COXWL
IDS
This is for strong inversion…
![Page 20: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/20.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Analog properties and process scaling: (2)
k=Cox scales => for the same W and L:
W.I.-S.I. boundary moves towards higher currents:
Ilim=2nk(W/L)UT2
0
5
10
15
20
25
30
1.E-10 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01
ID [A]
gm/IDS max in W.I.
![Page 21: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/21.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Analog properties and process scaling (3)
tox scales => Cox and k=Cox increase. For the same W and L:
matching improves:
flicker noise is reduced:
transconductance increases:
WLtoxB
VTH
S V
K a
C WLfox2
![Page 22: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/22.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
0 VddVTp Vdd-VTn
gds
Vdd=5V
0 VddVdd-VTn VTp
gds
Vdd=1.6Vck
ck_b
Vin
Problem: SC circuits operation (1)
![Page 23: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/23.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
W/L=200/0.36
CL=20pF
fin=2.5MHz
ck
ck_b
VinCL
Problem: SC circuits operation (2)
![Page 24: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/24.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Problem: substrate noise
P+
P-digitalanalog
![Page 25: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/25.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Analog properties and process scaling: (3)
tox scales => Vdd must be scaled as well
Minimum power consumption for class A analog circuits:
VVdd
VddfSNRkT8P sig
V is the fraction of the power supply not used for signal swing
![Page 26: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/26.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Analog properties : summary
Transistor properties improve, but signal swing is reduced
=> is there an optimum?
Optimal power/performance trade-off may occur with 0.35 - 0.25 m!
(A. J. Annema, IEEE Trans. On Cicuits and Systems, II vol 46, No. 6, June 1999).
In 0.25 m CMOS (2.5V) conventional architectures still work!
![Page 27: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/27.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Effect of radiation on MOS (1)
The sensitive part is the oxide A ionizing particle creates electron- hole pairs In the oxide, the mobility of holes is much smaller than the one of electrons (7-12 orders of magnitude) Three main effects arise: => threshold shift of the main device => threshold shift of parasitic devices => interface state generation
SiO2
n+
gate
P-
n+
![Page 28: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/28.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Effect of radiation on MOS (2)
![Page 29: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/29.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Effect of radiation on MOS (3)
polisilicon
nwell
n+
Vdd Vss
source++++++++++
Inter-device leakage via thick oxide
![Page 30: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/30.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Rad-tol design approach
SDG
D
S
G
• Thin oxide + enclosed layout & guardring (ELT) = radiation tolerance• Deep submicron CMOS is a good choice for rad-tol IC for HEP• Single Event Effect may worsen, but... • Extesively studied by the CERN RD49 collaboration
![Page 31: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/31.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Silicon Drift Detector (SDD)
• Drift of charged particles
in silicon• 2-dimension
measurement• 20m resolution• dE/dx measurement with
analog read-out• “few” read-out channel• drift speed 5m/ns• but…v=E, T-2.4!
![Page 32: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/32.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
.....
![Page 33: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/33.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Total number of channels: 130000 Input charge 500e- to 250000e- Input signal: Gaussian (amplitude 10nA - 1.6A; 10ns – 30ns) Shaping time: 40ns Sampling frequency: 40 MS/s Bits/sample: 10 Noise < 500 e- rms (250e- rms) Power/channel < 5mW Front-end board: 8 x 2 cm2
System dead time: < 1ms Reduce material as much as possible
SDD system specifications
![Page 34: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/34.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
On the front-end board space for 8 VLSI chips Optimize the system for minimum output connections Preamplifier Sampling: 1 FADC/channel: impractical for power and space First level analog buffer (SCA) + slower ADC Commercial slower ADC: impractical for space Commercial slower ADC: analog data handling No analog processing, ADC on the front-end chip Front-end integration: 64 channel/chip as a compromise
between space and yield (8 FE chips per detector)
System partitioning (1)
![Page 35: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/35.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Output lines @ 40MHz clock: two 10bit busses/chip
16 busses per detector: 160 lines ( too many!)
Solution: local digital buffering (2nd chip)
10bit to 8 bit reduction on the digital buffer
Two 8 bit busses per detector (=less material)
Only one 8 bit bus per front-end with acceptable dead time
8 chips on the FE board, 16 chips per detector
System partitioning (2)
![Page 36: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/36.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
A look at the system...
![Page 37: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/37.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
... and at the chip
Preamp Analog memorySAR ADC
![Page 38: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/38.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Preamplifier specs
• Input capacitance capacitance: 1 - 3 pF• Input signal 1 to 8 mips• Peaking time < 50 ns (separation of close tracks)• Noise < 500 e- r.m.s• Power consumption < 2mW/ch
![Page 39: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/39.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Preamplifier block diagram (1)
PA SH
BH
In Out
Vref
![Page 40: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/40.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Preamplifier block diagram (2)
PA SH
BH
In Out
Vref
Vfeed
Cf Cz
If
Rf Rz
![Page 41: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/41.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Core amplifier schematic
In
Vcas
VB VB
VBC VBC
![Page 42: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/42.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Baseline holder schematic
VB
VB VB
VB
VB VBVref Out
In_sh
![Page 43: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/43.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Buffer schematic
VB
VinVout
Cload
![Page 44: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/44.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Shaper time constant tuning
OutSH
![Page 45: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/45.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Response to 1 mip
Response for 1 mip
1.72
1.74
1.76
1.78
1.8
1.821.84
1.86
1.88
1.9
1.92
0.0E+00 6.0E-08 1.2E-07 1.8E-07 2.4E-07 3.0E-07
time
volta
ge
V = 164 mV
Tp = 32 ns
(s)
![Page 46: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/46.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Layout example
PAIn
Vfeed
Cf Cz
If
Rf Rz
![Page 47: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/47.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Memory Channel Schematic
Vref_w
IN
+
Vref_r
OUT
Digital Control Logic
SW_W SW_R SW_F
G. Anelli et al.IEEE TNS, vol48 (3), pp. 435 – 439)June 2001
![Page 48: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/48.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Which Capacitors for Storage? (1)
p+n+ n+
n well
p substrate
p+n+ n+
p substrate
GND
V
GND
V
NMOS Transistor Inversion Region
PMOS Transistor without S and DAccumulation Region
![Page 49: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/49.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Which Capacitors for Storage? (2)
0.20.30.40.50.60.70.80.9
11.1
-2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5Vbias [ V ]
C /
Co
x
PMOS (no S & D) N+ poly - N wellPMOS (S & D float.) P+ poly - N well
NMOS (S & D connected)
![Page 50: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/50.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Design of a compact CMOS ADC
• Conventional SAR based successive approximation scheme• Good trade-off between speed, area and power• Clock speed: 20 MHz• Single rail operation
![Page 51: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/51.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
ADC design criteria:
Maximum full scale range: Vref
Limit due to noise:
Minimum capacitor allowed by the technology: 75fF
DAC power consumption
Power consumption dominated by the comparator
Vdd, Vin Vref
![Page 52: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/52.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
• Capacitive sub-dac without buffer => larger non-linearity, but negligible at 10 bits level
DAC Architecture (3)
![Page 53: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/53.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
DAC layout
![Page 54: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/54.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Comparator block diagram
IN -
+ +IN +
Vref
Vref
S1
S2
S3
S4
S5
S6
LATCH
![Page 55: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/55.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Comparator schematic...
![Page 56: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/56.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
... and layout
![Page 57: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/57.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Prototyping
Microelectronics circuits are cheap in large volumeThe cost of the masks is a fixed offsed (about 100 k$)The cost of the wafers is low (about 2k$)In the research environment the mask costs is usually shared among several users (MPW runs)Typical prototyping cost: 500 $/mm2
![Page 58: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/58.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Very first prototypes (RD49)
ADC Analog memory 2 x 2 mm2, cost 2k$ each
![Page 59: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/59.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
First SDD front-end prototype
• 32 channels with preamp and analog memory
• 16 ADCs on chip
• Power consumption 5mW/ch
• Noise: 210 e- @ 3pF
• External bias and control for test purposes
• Area: 42mm2, cost: 21k$
![Page 60: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/60.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Response to 4fC
0
50
100
150
0 10 20 30 40 50 60
Cell number
AD
C c
ount
s
![Page 61: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/61.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Linearity
0
200
400
600
800
1000
0 10 20 30 40
Input charge (fC)
AD
C c
oun
ts
INL < 1%, mainly due to the preamp
![Page 62: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/62.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Pulse shape fitting
Fit to a CR – RC3
![Page 63: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/63.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Radiation tolerance
Before and after 30 Mrd
0
200
400
600
800
1000
0 10 20 30 40
Input charge (fC)
AD
C c
ount
s
y1=25.9*x+21y2=26.1*x+34
Noise increase <10%
![Page 64: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/64.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
From 32 to 64 channels
Final version: 64 channels, same building blocks of the first version plus:
internal bias generators
internal DAC for baseline setting
internal programmable pulse generator
Low drop-out voltage regulators
JTAG protocol for parameters download
LVDS interface.
![Page 65: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/65.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
The chip …
![Page 66: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/66.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
…and a test set-up
![Page 67: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/67.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
A typical problem…
![Page 68: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/68.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Probe station testing
![Page 69: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/69.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Probe card detail
![Page 70: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/70.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
DC parameters
Analog current: average 93.22mA; rms 3.6mA Digital current: average 131.4mA; rms 5.3mA Vref1: average 1.926V; rms 4.2mV (design: 1.925V) Vref0: average 0.524V; rms 2.8mV (design: 0.525V)
![Page 71: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/71.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Example of signal
1 mip = 108 ADC counts
![Page 72: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/72.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Example of baseline (1)
![Page 73: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/73.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Example of baseline (2)
Noise : 300 e- rms
![Page 74: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/74.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Example of calibration (1)
![Page 75: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/75.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Example of calibration (2)
![Page 76: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/76.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Example of calibration (3)
![Page 77: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/77.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Linearity (1)
0
200
400
600
800
1000
0 200 400 600
DAC code
AD
C c
od
e
![Page 78: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/78.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Linearity (2)
0,00
1,00
2,00
3,00
4,00
0 200 400 600
DAC code
% D
evi
ati
on
![Page 79: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/79.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
On chip uniformity
Baseline average 100.8 ADC counts; rms 3.8 Gain: average 108 ADC counts/mip; rms 0.4
708090
100110120
0 8 16 24 32 40 48 56 64
channel number
bas
elin
e
![Page 80: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/80.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
Discrete…
2 cm
1 cm
1 channelminimum power: 10mWpower supply: 4V to 25Vcurrent: 2.3mAshaping time: 2.4snoise < 280 e- rmssize: 2cm x 1cm
![Page 81: University of Siegen – Feb. 20, 2003 Angelo Rivetti – INFN Sezione di Torino VLSI electronics for the read-out of radiation sensors Angelo Rivetti – INFN.](https://reader038.fdocuments.net/reader038/viewer/2022110322/56649d605503460f94a4135c/html5/thumbnails/81.jpg)
Angelo Rivetti – INFN Sezione di Torino University of Siegen – Feb. 20, 2003
… and integratedCMOS 0.25m technology64 channels32 10 bits ADCPower 8mW/chShaping time: 40nsNoise < 280 e- rmsSize: 1cm x 0.9cm
1 cm
Front – end for ALICE SDD