Ultimate 3D e-beam lithography for nano/micro-structuring with NanoMaker

Ultimate 3D e-beam lithography for nano/micro-structuring with NanoMakerINTERFACE Ltd, MoscowIMT RAS, Chernogolovka, Moscow Regionrev. 2015

Ultimate 3D e-beam lithography for nano/micro-structuring with NanoMaker

The NanoMaker is a powerful lithography system for electron and ion beam lithography using a commercial SEM, FIB or dual beam microscope. The NanoMaker solutions comprise modern Pattern Generator hardware and versatile data preparation software which allow both design and nanofabrication. It provides friendly graphic interface to create and design structures of nano-size as little as 10 nm based on e-beam lithography method for SEMs, make simulation of resist exposure, calculate exposure dose values/times in correlation with proximity effect correction for 2D/3D structures, compensate static distortion of e-beam deflecting system, significantly reduce total exposure time by reading and actively suppressing dynamic distortion of e-beam deflection.NanoMaker system is developed and launched as commercial product by Interface Ltd. NanoMaker system is a result of long and fruitful cooperation with a team of scientists based on IMT RAS, Chernogolovka, Moscow Region, Russia Preview Ultimate 3D e-beam lithography for nano/micro-structuring with NanoMaker


NanoMakerFamilies of MicroscopesLithography systemsJEOLZeissFEIHitachiTescanLeoFocused Ion Beamand Dual Beam machinesand othersCost starts from USD 100,000Cost starts from USD1,000,000Ultimate 3D e-beam lithography for nano/micro-structuring with NanoMakerThe goal of NanoMaker is to achieve with a conventional microscope maximum resolution capacity in lithography mode. Practically it means to convert a standard lab electron microscope into a full-functionality e-beam lithography system by fitting software and hardware to control electron beam by compensating dynamic and static errors of deflection system. Just note that price for scanning electron microscope starts from USD 100,000.00 and price for full-functionality e-beam lithography system starts from USD 1,000,000.00 Goals


NanoMaker purposeNanoMaker is a unique complex, which facilitates Scanning Electron Microscopes to obtain the ultimate resolution and compensate inaccuracies of microscope characteristics. It is developed: to create and design structures of various geometry forms and of nano-size as little as 10 nm to be exposed by e-beam lithography method to work with 2D and 3D structures in resist, create multilevel structures to overcome proximity effect appearing when micro- and nano- structures are exposed including 2D and 3D structures to compensate static distortion of e-beam deflecting system by calculation methods to significantly reduce total exposure time by measuring and actively, on-the-fly, compensating dynamic errors of e-beam deflection


NanoMaker purpose (continued) to simulate results of resist development by matching exposure dose and time parameters to provide 100% of known-good output to provide programmable control over cooperative movement of beam and stage, involving the blanking system as well to provide compatibility with other graphic software systems to import and export other known formats for images and support various types of SEMs, FIBs, lithographs, etc. equipment to support operations of scanning metrology microscopes and to work with fields, markers, video, etc. to provide image acquisition and carry out processing for fields alignment and stitching to work with large fields and provide seamless stitching of imagesSome of the features are unique and are not available in the market


NanoMaker hardwareTo provide capabilities of lithography systemsUltimate 3D e-beam lithography for nano/micro-structuring with NanoMakerPattern GeneratorNanoMaker consists of two main parts: Pattern Generator and Software modules.Pattern Generator is to control the exposure process by sending/receiving signals to/from microscope as it is sketched on the slide.Software modules are intended to solve a number of tasks depending on requirements to be mentioned further.Image acquisitionTo control blankerTo control stageTo control e-beam position


NanoMaker hardwarePattern Generator Elli30 PCIe Hardware comprises two units: analogue unit and digital unitAnalogue unit is a separate box with its own stabilized power supply unit.Digital and Analogue units are connected by two fiber optic cables to provide high speed noise protective data transfer. Digital unit is a PCIe Board Controller.The Pattern Generator carries: Two 16-bit Digital-to-Analogue Converters (50 MHz DACs ) One 8-bit Analogue-to-Digital Converter (ADC) Beam Blanker On/Off switch (TTL output level) Internal/External scan mode switch (TTL output level) Output XY DACs and input ADC signals can be tuned for arbitrary intervals in 10 V range.


NanoMaker softwareTo provide capabilities of lithography systemNanoMaker provides integrated development environment to create structures and design data NanoMaker provides functions to control exposure and stage operations. NanoMaker provides functions to acquire markers images, to recognize them and to write structures under alignment control NanoMaker provides functions to compensate inaccuracies of microscope and improve lithography yield, i.e. : compensates distortion and dynamic errors calculates proximity effect correction makes simulation and predicts the results of exposure


NanoMaker solutionsNanoMaker system can be supplied to the end user in various combinations: NanoMaker-FullNanoMaker complete system fully solves the task to convert scanning electronic microscope into e-beam lithograph

NanoMaker-Full to create and design structures of nano-size as little as 10 nm based on e-beam lithography method for SEMs, make simulation of resist exposure, calculate exposure dose values/times in correlation with proximity effect correction for 2D/3D structures, compensate static distortion of e-beam deflecting system, significantly reduce total exposure time by reading and actively suppressing dynamic distortion of e-beam deflectionNanoMaker-WorkbenchNanoMaker-WriterNanoMaker-Editor

NanoMaker-Workbench module to design 2D and 3D structures, solve a problem of proximity effect correction and to have output data in formats (GDSII, DFX, ELM) acceptable by most brands of existing lithographs. The inverse transformation of data is also possible. It means that data released in mentioned above formats can be further corrected or re-designed and exported back in the same format. NanoMaker-Workbench allows to work in off-line mode (without being directly connected to a scanning microscope).

NanoMaker-Editor is fully featured graphical editor of lithographic structures with some limitations of export possibilities in unregistered version. Others functions can be simulated for training purposes. .

NanoMaker-Writer combination of thePattern Generator and software that allows to use a microscope for lithography tasks. It is this stage when conversion to lithograph is done and the best resolution to achieve proper lithography quality is possible.The main functions of the Pattern Generator and software are: to control important microscope parameters to assign beam position (DAC), to control stage position to take image at the given location (ADC), to switch on/off the e-beam blanker


NanoMaker software modules diagram Proximity & Simulation Proximity Effect Correction Exposure & Development Simulation Editor (Specialized 2D/3D CAD) Recommended Parameters Database NanoMaker-WorkbenchNanoMaker-WriterInterface Ltd. www.nanomaker.com Postprocessing Negative, Union, Frame, Shrink, Erase, Stratification, Overlaps out


Practical implementations of modules

Import of structures *.DXF, *.CSF, *.GDS, *.TIF, *.BMP and holograms with complex topography up to 100 MgbData designing or redesigning NanoMaker-WorkbenchDesigning own structuresOFFLINE MODEExport of data NanoMaker-WriterONLINE MODEOr transfer of structuresPattern Generator


Unique features of NanoMakerIn the market of similar software unites NanoMaker offers unique features:Proximity effect correction for 2D and 3D structuresSimulation of resist development"Distortion compensation" - compensation of static distortions of deflection systemMeasurement and active compensation of dynamic distortions of deflection system and as a result possibility to exposure without beam blanker Advantage features for hologram/kinoform applications


Proximity effectProximity effect correction is especially important for closely packed, differently sized pattern elements. Though it is applicable to simple structures as well. The proximity effect becomes apparent in small enough areas when forward and backward scattering takes place in the substrate and leads to overexposure, thus resulting in breaking the accuracy of the structure.0 e-beam width when reaching resist e-beam width when reaching substrate e-beam width when leaving resist. It defines actually exposed areaIn the figure it is depicted an e-beam exposed to a chip. The chip consists of substrate covered with resist. Initially the e-beam was focused. However when it permeates both-way trough substrate and resist, electron scattering takes place. As a result radiation dose is disproportioned and final exposed area () is significantly more than it was initially (0) assigned.

This fact is depicted in the slide. The resulting radiation dose redistribution in resist is known as proximity function and has the following values of parameters: - fractions of micron, 0 hundredths of micron, - microns. The fact is the more e-beam energy the more disproportion is. The value of disproportion is as well subject to parameters of substrate and resist. To the convenience of the users NanoMaker offers its own integral database of Recommended Parameters. It enables to fast match assignments of parameters.


How Proximity effect worksZSimple exapmple to demonstarte the impact of proximity effectAn elementary structure is shown. The total area is about 20 micrometers. The structure resembles field-effect transistor (FET). It consists of two rectangulars and has a line of 0.2 micrometers width. All gaps between elements are of the similar width (0.2 micrometers). The circuit is designed on Silicon chip with accelerating voltage of 25 Kilo electro Volt.


How Proximity effect impactsIf proximity effect is not corrected then the result coud be depicted this way SimulationPhoto of the exposed patternThe fact the top line is missing is due to insufficient radiation dose, contrary, excessive dose resulted in gaps vanishing between rectangular.


How proximity effect is correctedNanoMaker provides function to calculate the dose distribution along the area. Figure shows the areas depicted by isolines, which highlight the zones with uniform characteristics. In our case it means that each zone has ascending dose from 105% up to 125% against 100% initial dose .


Result of proximity effect correction After simulation shows satisfied results exposure is done100% of known-good output


Simulation proximity effect and resist developmentOne more unique feature of NanoMaker is possibility to output the lithography image simulated in the screen. It is possible to assign and alter various dose/time parameters and then follow it with preview in the screen as if resist development has taken place. In the preceding figures we can notice the coincidence with the experimental data obtained. This way simulation process effects in saving time and physical resources.We have to note that resulting accuracy of proximity effect correction is very much subject to accuracy of assigned parameters. Wrongly assigned, from accuracy point, parameters can even increase distortion effect. That is why NanoMaker maintains the database of Recommended Parameters for most common types of substrate.


Sample of proximity effect correction for 3D structure Simulation ofeExposure dose.Iisolevels after correctionAn AFM image of a relief of transparent polymer DOE after copying from metal replica. Presently the problem to create 3D structure with e-beam lithography, say for optical applications, comes into consideration more and more oftenTopographic expression of 3D structure


Example of creating 3D structureUsing 3D proximity correction and electron lithography, objects with arbitrary 3D shape could be created with single exposure session.Kinoform optics


Distortion compensation (static)One of the significant NanoMaker function is capability to compensate distortions, both static distortion of deflection system and dynamic distortion of e-beam long jump. The static distortions arise from electromagnetic lenses imperfection. NanoMaker provides with a function to measure the distortions of microscope operative field and store the values of deviation from pattern grid. These values are used for calculation of e-beam trajectory to meet the parameters of a given pattern grid.Ideal shape of scanningActual shape of canning


Distortion compensation (dynamic)NanoMaker/Writer provides with one more absolutely unique feature to measure and carry out active compensation of dynamic distortions of deflection system.Common solutionUse blanker systemWait till e-beam is settled at the point

ResultWaiting time usually exceeds pure exposure time several times NanoMaker solutionNo blanker system is required when structure is written in one field Compensate distortion by addressing to the trajectory resulting into ideal line

ResultCalculated exposure time is pure time of total exposure process


Example of distortion compensationThe structure with long jump of e-beamNo compensationWith compensation


AlignmentThis function enables to make lithography of complex multi-layer structures.It enables: acquire an image of existing lithography layers and recognize markers in automatic or semi-automatic mode rotate, zoom and shift the image align a new layer with existing objects of the image as per given markers make exposure in a new coordinate frame


Alignment (example)Here we will demonstrate how it works on the samples prepared with the NanoMaker alignment function.In the figure shown gold contacts along with markers were done with optical lithography tools. With the help of NanoMaker the dimensions of gold contacts were measured, depicted and aligned with the given layers and whereupon they were pickled in hetero-structure on GaAs.


Alignment consequence With NanoMaker the dimensions of gold contacts were measured, depicted and aligned with the given layers and whereupon they were pickled in hetero-structure on GaAs.First optical lithographyPlacing metallic ferromagnetic material in the places marked by cross lines.a)b)c)d)


World marketNearest competitors

The nearest competitors at the market are:

NPGS

Raith GmbH

We refer to the book: Micro-lithography, Micromachining and Microfabrication (ed. P Rai-Choudhury),Volume1: Microlithography, Section 2.5, written by M. McCord and M. Rooks. Web ref: http://www.cnf.cornell.edu/cnf_spie54.html


World market


ResumeThe main purpose of NanoMaker system is to convert conventional electron microscope into lithography system

Successfully defined and solved Proximity Effect Correction problem for 2D and 3D structures that enables to fulfill designing and simulation

Unique functions are developed and implemented Proximity effect correction for 3D structures Static distortion compensation Dynamic error correction

NanoMaker is a commercial product that can be customized as per customers requirements


Photo Gallery (Cantilever needle)FrontSide viewThe examples of integration of NanoMaker into AFM are shown at the slides as possibility to grow up tips for cantilevers with high accuracy. Actually this is an unique technique which is used for industrial needs. The process is done in the standard work chamber. This technique is used in manufacturing probes/sondes and calibration standard for scanning sonde microscopy. NanoMaker enables to grow up the tip of a standard silicon cone tip and get tip with diameter of 100-200 nm and length up to unites of micrometer.


Photo Gallery (Implementation for fun)Imitation of gecko paws performed in lab with JEOL - 840Nature Materials - published the photo to illustrate macroscopic adhesive properties by showing a spider-man toy clinging with one of its hands to a horizontal glass plate. The toy (15 cm high; weighing 40 g) has its hand covered with the microfabricated gecko tape, which provides a 0.5 cm2 contact with the glass and a carrying capacity of >100 g.


Photo Gallery (Nano World)The width of line is 10 -20 nmThe smallest map of the world.


Contacts

We thank you for your attention

Please visit our site www.nanomaker.com

Contact us at e-mail: [email protected]

NanoMaker this is a lithography system, which is intended for preparing / designing data and creating 2D and 3D structures by lithography methods. Quality of lithography designed is validated by successful simulation of proximity effect, alignment and distortion compensation/correction. The complex itself or its separate modules can be used in microelectronics and nanotechnology industries and research centers for designing and manufacturing modern micro- and nano-electronic devices. The given lithography system was developed conjointly by Interface Ltd., Moscow, Russia (http://www.nanomaker.com) and IMT RAS, Chernogolovka, Moscow Region, Russia. The goal of launching the developments regarding the given lithography system. The developers were to solve quite economics problem to extract from a standard electronic microscope maximum resolution capacity in lithography mode. Practically it means to convert standard lab electronic microscopes into full-functionality e-beam lithographs by using software to compensate dynamic and static distortion. As a result, standard scanning electronic microscope, with price being as much as ten times less than for full-functionality e-beam lithograph, with the help of NanoMaker can achieve functionality of the latter one. Keeping in mind that price for scanning electronic microscope starts from USD 100,000.00 and price for full-functionality e-beam lithograph starts from USD 1,000,000.00.NanoMaker consists of two main parts: Pattern Generator and Software modules. Pattern Generator is to control the exposure process by assigning physical parameters as it is sketched in the slide. Software modules are intended to solve a number of tasks depending on requirements to be mentioned below.NanoMaker has its own history that covers more then 20-year period and keeps being perfected. The first versions were integrated and distributed with products of Raith Gmbh, Germany and known under Proxy name. These initial versions were realized for DOS operation system and then were released as 16-bit Windows applications. For this period NanoMaker has come back from immigration to settle down at home and give a growth up to 32-bit version for Windows 9x, NT, 2000, XP, 7 and 8.

NanoMaker can be presented in diagram form as a set of a number of modules. Each module has its own purpose and applicability. NanoMaker complex fully solves the task to convert scanning electronic microscope into e-beam lithographNanoMaker /Workbench software module is to design 2D and 3D structures, solve a problem of proximity effect correction and to have output data in formats (GDSII, DFX, ELM) acceptable by most brands of existing lithographs. Inversion is also possible. It means that data released in mentioned above formats can be further corrected or re-designed and exported back in the same format. NanoMaker/Workbench has a friendly interface and can work both in online and off-line mode (without being directly connected to a scanning microscope). NanoMaker/Writer + Pattern Generator Board combination enables to control scanning electronic microscope or lithograph parameters with the help of Generator. It is this stage when conversion to lithograph is done and the best resolution to achieve proper lithograph quality is extracted.The functions of Pattern Generator Board are elementary. That is to assign e-beam location (DAC), to take the image at the given location (ADC), and to switch on/off blank e-beam.NanoMaker/Writer Software modules features are as depicted in the diagram.

This is to briefly present basic features available with the help of NanoMaker software/hardware system. Some of these features are unique and are not available in the market for similar existing competitive developments. One of the most significant NanoMaker function is availability of a proximity effect correction module. Here we will show the basic crux of the problem. In the slide it is shown an e-beam exposed to a chip. The chip consists of a substrate covered with a resist. Initially the e-beam is focused. However when it permeates both-way trough substrate and resist, electron scattering takes place. As a result radiation dose is disproportioned and final exposed area () is significantly more than it was initially (0) assigned. This fact is depicted in the slide. The resulting radiation dose redistribution in resist is known as proximity function and has the following values of parameters: - fractions of micron, 0 hundredths of micron, - microns. The fact is the more e-beam energy the more disproportion is. The value of disproportion is as well subject to parameters of substrate and resist. To the convenience of the users NanoMaker offers its own integral database of Recommended Parameters. It enables to fast match assignments of parameters. We applied 2D Gauss distribution model to calculate distribution of radiation dose.An example of proximity effect impact. An elementary structure is shown. The total area is about 20 micrometers. The structure resembles field-effect transistor (FET). It consists of two rectangulars and has a line of 0.2 micrometers width. All gaps between elements are of the similar width (0.2 micrometers). The circuit is designed on Silicon chip with accelerating voltage of 25 Kilo electro Volt.We compare two figures. One is without implementation of proximity effect correction left bottom figure. And with implementation of proximity effect correction right bottom figure. The first one shows heterogeneity of the structure, which is a result of e-beam scattering and effect of resist developing. The fact the top line is missing is due to insufficient radiation dose, contrary, excessive dose resulted in gaps vanishing between rectangulars. Unlike the mentioned figure, right bottom figure shows homogeneous structure. This structure is achieved by using proximity effect correction function, which resulted in assigning proper dose wise time exposure. As a result the depiction is clear and precise.As it comes from the above, proximity effect correction comes to determining optimal dose wise time of exposure, which itself can vary from zone to zone of the structure. In accordance with the results of calculation, the given structure is sectored wise dose and time of exposure. The left top figure shows the areas depicted by isolines, which highlight the zones with uniform characteristics. In our case it means that each zone has ascending dose from 105% up to 125%. One more unique feature of NanoMaker is possibility to output the lithography image simulated in the screen. It is possible to assign and alter various dose/time parameters and then follow it with preview in the screen as if resist development has taken place. In the right middle figure we can notice the coincidence with the experimental data obtained. This way simulation process effects in saving time and physical resources.We have to note that resulting accuracy of proximity effect correction is very much subject to accuracy of assigned parameters. Assigning wrong, from accuracy point, parameters can even increase distortion effect. That is why NanoMaker maintains the database of Recommended Parameters for most common types of substrate. Presently the problem to create 3D structure with e-beam lithography, say for optical applications, comes into consideration more and more often. Slide 8 demonstrates the example of carrying out such a task with NanoMaker implementation. Left figure shows 3D structure with isolines depicting zones with uniform exposure characteristics. Right figure shows topographic expression of 3D structure. The color is graduating from white (the thickest lay of resist left) to shadows of gray up to black color (the thinnest lay of resist left). The process of design and proximity effect correction for such objects is different from the ones for standard lithography and requires precise knowledge of resist contrast characteristics. It is 3D lithography when specifications of resistor and substrate mean a lot and have defining value. In 3D case the availability of database of Recommended parameters is vital. We have to note that processing data with implementing proximity effect correction practically does not depend on the type of lithograph instrument whether it is SEM converted into lithograph or industry type lithograph. In case of small dimensions of the structure, less than 1 micrometer, proximity effect correction might not have effect to exposure distortion. But in this case we might face deterioration of lithography reproduction due to processing tolerance. It is proximity effect correction that results in 100% of known-good output.One of the significant NanoMaker function is one for distortion compensation.This function enables to compensate static distortions of deflection system. These distortions arise from electromagnetic lenses imperfection. To avoid distortions when large scale structures are exposed the shift of stage is recommended to apply exposure to small areas of the main structure. However, in practice it is not convenient as only element microscopes are equipped with precision-built stages, let alone the fact that the price of such equipment very often exceeds the price of the microscope. NanoMaker provides with a function to measure the distortions of microscope operative field and store the values of deviation from pattern grid. These values are used for calculation of e-beam trajectory to meet the parameters of a given pattern grid. The figure shows the measuring results, which were done with the help of NanoMaker function forJSM840 microscope, and pattern grid of 5 x 5 mm. The measurements were done every mm (dash line). The values of distortions obtained (bold line) are magnified 10 times. As it is shown the error exceeds 25 micrometers at the edges of the grid. These values are taken into consideration to correct the distortion at stage of exposure or reading the lithography image. As a result we have distortion effect corrected and the image or structure exposed looks realistically. NanoMaker/Writer provides with one more absolutely unique feature to measure and occur active countermeasures of dynamic distortions of deflection system.Till now only one way has been used to solve this problem that is switching on the system of e-beam blanking. This actually means to de-energize for some period of time. It dooms to downtime. Though the duration of such stoppages is estimated in milliseconds total time is long enough. NanoMaker provides with a feature to avoid de-energizing and solve the problem on-the-fly with the help of computer calculation of the trajectory. In the figure you can see an image patch made without blanking. The broken part is due to long (200 micrometers) e-beam leap, after which the transient process in deflectors and amplifiers keep taking place for several milliseconds. Such distortions can be corrected by standard way that is by inputting Settling Time=1-10 milliseconds and blanking. It results in time delay when designing and Generator processing speed dwindles. We offer to calculate the trajectory to provide placement of the e-beam in the required place and point of time. The right figure shows the result of design with active countermeasures of dynamic distortions of deflection system. This feature makes microscopes lacking blanking system for carrying out lithography. In case the microscope is equipped with mechanical stage with laser interferometer NanoMaker enables both to design large scaled structures with shifts and adjust microscope field settings when using precision-built stages.Alignment function is a standard lithograph function.Here we will demonstrate how it works on the samples prepared with the NanoMaker alignment function.Basically this function enables to make lithography of complex multi-layer structures. That means: to read and input the existing lithography image, make exposure in a new coordinate frame, rotate and compress/stretch the image, align a new lay with existing objects of the image as per given markers. In the figure shown gold contacts along with markers were done with optical lithography means. With the help of NanoMaker the dimensions of gold contacts were measured, depicted and aligned with the given layers and whereupon they were pickled in hetero-structure on GaAs. The next e-beam lithography procedure resulted in placing drops of ferromagnetic material in the places marked by cross lines.

The main purpose of NanoMaker software/hardware complex implementation is to have scanning electronic microscopes obtain the functionality of industrial lithographs on the basis of software to compensate dynamic and static distortion.NanoMaker provides with means to extract optimal performance of scanning electronic microscope and practically convert it into full-function lithograph in case when isolated orders or special non-serial orders for lithography are required.NanoMaker complex has the following implementation records: Scanning electronic microscopes such as JEOL JSM-840, BS-300, LEO 1560, Hitachi 4000, and Philips SEM 525; complexes ZRM-12, ZRM-20, as well as at e-beam lithographs with focused beam.Availability of NanoMaker editor working in off-line mode gives advantage to render a remote service to design and correct proximity effect, arrange for input/output customized format for 2D and 3D structures for further processing at the equipment of the Customer. In case of small-scaled structures when proximity effect does not result in distortions this service is to provide accuracy when matching parameters and favor 100% of known-good output. In the market of similar developments NanoMaker offers unique features such as- Proximity effect correction for 2D and 3D structures- Simulation proximity effect and resist developing- Distortion compensation compensation of static distortions of deflection system- Measurement and active countermeasures of dynamic distortions of deflection system.Such set of functions is realized by none world leading company developing similar systems in this market.The listed above makes NanoMaker a unique complex, which has scanning electronic microscopes obtain the features of full-functionality lithographs with minimum expenses.The examples of integration of NanoMaker into AFM are shown at the slide as possibility to grow up tips for cantilevers with high accuracy. Actually this is an unique technique which is used for industrial needs. This technique is used in manufacturing probes/sondes and calibration standard for scanning sonde microscopy. NanoMaker enables to grow up the tip of a standard silicon cone tip and get tip with diameter of 100-200 nm and length up to unites of micrometer. The process is done in the standard work chamber. NanoMaker also enables to provide e-beam fine focusing at the tip of a needle-substrate at the given angel, take account of time drift of electronic microscope parameters as well as other specifics.

Imitation of gecko paws. A small area near the edge of a 1 cm2 array of polyimide hairs. This array was later used to evaluate macroscopic adhesive properties of the mimetic material. Nature Materials, http://www.nature.com, published the photo ( http://www.nature.com/cgi-taf/DynaPage.taf?file=/nmat/journal/v2/n7/full/nmat917.html) to illustrate this point by showing a spider-man toy clinging with one of its hands to a horizontal glass plate. The toy (15 cm high; weighing 40 g) has its hand covered with the microfabricated gecko tape, which provides a 0.5 cm2 contact with the glass and a carrying capacity of >100 g. Note that the toy was already re-attached several times to various surfaces before this photo was taken.

Ultimate 3D e-beam lithography for nano/micro-structuring with NanoMaker

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