5-3

1

.

. 66-5

BJT2

3

.

. BJT

p n .

1 Transistor: TRANSfer resISTOR2 BJT: Bipolar Junction Transistor, 3 Discrete

Transistor

UJT FET BJT

IG-FET J-FET

MES-FET MOS-FET

HEMT IGBT

66-5

np

n

E B C

npn 68-5

67-5 . pnp npn .

.

1

) C( 2 ) B( 3 ) E ( 5 . -

. B-E B-C 67

:

TBE VnvB ei

ConstIKmV ~/.T

VB

BE

:/2,

E C 67-5

68-5 .

npn

.

67-5

)( !

1 Collector,

2 Base,

3 Emmitter,

pnp - npn -: BJT 67-5

5-3-1

: 1

2

3

.

4

5 .)69-5 (

- - CE

( .)70-5

CE BE

:

1 CE: Common Emitter2 CB: Common Base3 CC: Common Collector4 Four Pole5 Two Port

Ii Io.

Vo

. ..

CB

Vo

.

Vi

CC

.

CE

.

Vi Vo

Ii Io.

Io. . .

Ii

Vi

.

)CC( ) CB( )CE( : 69-5

CEvBEv

Ci

Bi

CE 70-5

:1 Bi BEv CEV

: 2 Ci CEv BEV BI

: 3 Ci BEv Bi CEV

4 BE

VCE

(

. )

.

CEv 71-5

.

CEv 71-5

VA ( 72-5

).

1 Input Characteristic

2 Onput Characteristic3 Transfer Characteristic

4

mVvBE 620

mV600

mV560

VvBE 5/0

Ci

CEvAV

A30

A20

A10

0BI

Ci

CEvAV

IB - VBE - 71-5

:

VVBE 5.0 0 BI 0 Ci .

1

.

) ( 71-5

) ( 72-5

2 .

V3.02.0 CEv. 72-5

A10BI V2.0V SatCECEv A1mIC A40BI

V3.0V SatCECE

v A4mIC .

1Cut-off Region 2 Saturation Region

V_VCE

0V 0.5V 1.0V 1.5V 2.0VIc(Q1)

0A

2.5mA

5.0mA

IB = 40uA

30uA

20uA

10uA

IB = 0uA

72-5

0 Ci

( ) (

. )

1.

) (

.

) (

:

- :maxCECE Vv

:maxCC Ii

: max. DCEC Pvi

1 Active Region

Ci

CEv

maxDP

maxCI

maxCEV0

73-5

- . 73-5

maxVCECEv Ci

1

maxV,V,BDV . CEBD BV

Ci .

MaxCi CEv ). ( CI

.

MaxDCECD: )( PviP : .

)5-71(

CE

DC v

Pi Max

2

-5 (

73(.

1000V10VCEmax: 100A10mAICmax

500W50mWPDmax 40 : . VVCEmax

100mAICmax 300 mWPDmax .

. C25

DmaxP

74-5 .

.

1 Break-Down Voltage2 SOA: Safe Operating Area

1

125

0

25

ND PP /

][ CT o

74-5

500mWPDN C75T

250mWPDmax .

pnp npn :

(1

,,npn: 0 ) CECB vii pnp : 0,, CECB vii.

5-3-2

- ) (

. ) 72-5( ) (

)5-72(

A

CEVnvsC V

veIi TBE 1./

sT )71-5 ( InV ,, AV

2ACE . Vv :

TBE ) 5-72(Vnv

sC eIi /

)(: ). 72-5 (AV BC ifi

: .Bi ~ Ci :

)5-73( TBEVnv

sCB eIii /

11

1 Forward Mode2 Early Voltage

)5-74( .Consti

i

B

C

:*

:

.Consti

i

I

I

i

i

b

c

B

C

B

C

:

AV

1.0A

CE

V

V %).10 (

: PSpice

BF 0 : CBVB

C

I

IBF

BDC ( ( :

A

CBII

B

C

V

VBF

I

IBDC

QC1

BAC ( ( :b

cII

B

C

i

i

i

iBAC

QC

.

100

100

125

][ MHzf

10

1/0 10

f Tf

1

10

100

1001011.0

300

100

0

][mAI C

200

01 /0 1

100

T=100C

T=25C

T=-50C

0

100

200

300

CT

CT

CT

50

25

100

100101.0

- - : 75-5

DC 5-3-2-1

) 3-1-1-5(

BE

BE DC VV .

0.7VV .

0.5VVBE :

.

- ) IB( ) IC (

BC : II

BC : II

.)(

DC 72-5

.)76-5 (

1000.7VV

0.8VVBEsat 0.2 VVCEsat .

VCEsatVBEsat V

ICIB

BI

- - - : DC 76-5

CCE( 14-5 I,V ( 77-5 .

R1 6 :

-

(

).

77-5 .

. 78-5 76-5

0.7VV 100

: VR1,,VCC KVL .

Ak

VV

R

VVIVIRV CCBBCC

5.26200

7.06

101

):74-5(

mAAII BC 65.25.26100

CECC KVL VR2,,V :

VmAkVIRVVVIRV CCCCECECCC 35.365.216202

Q1

R2

1k

R1

200k

Vcc

6V

+

-

14-5 77-5

.

I

I.

R2

1k

E

E

E

Q1

.

V

R1

200k

C

CI.B

0.7V

+

-

BVcc

6V

+

-

B

77-5 78-5

CEsatCE V3.35VV

.

. 250 15-5

78-5 :

AIB 5.26 . :

mAAII BC 625.65.26250

VmAkVIRVV CCCCE 625.0625.6162

CEsatCE VV625.0-V

76-5 77-5 .

. 5-79

: )( IB IC

mAk

VV

R

VVIVVV CECCCCEsatCE 8.51

2.06

2,2.0

E

C

0.8V

+

-

Vcc

6V

+

-

...

CEsat

Q1

B.

B

I

E

R2

1k

V

C

E

I

V

R1

200k

0.2V

+

-BEsat

77-5 79-5

: 80-5 16-5

R1 = 100k -

R1 = 500k -

.

:

Q1 .

81-5 ) 76-5 (

R1R2: .

VCC81-5 ( .(

:

21

2121,

21

2

RR

RRRRRV

RR

RV thCCth

0.7VV 100

.

R3

10k

Q1

R41k

Vcc

12V

+

-

R1

R218k

16-5 80-5

R3

10k

I

E

.

B

Vth+

-

C

R41k

Q1

.

R41k

I

CVcc

12V

+

-

E

B

0.7V

+

-

B

C

I

VB

Rth

.

IVcc

12V

+

-

.

R1

I

.

R3

10k

B

R218k

.

E

V

I

Q1

E

0.7V

+

- B

C

- 81-5

: R1 = 100k -

kkkRVV

kk

kV thth 3.1518100,83.11218100

18

0.5V1.83VVth ( .( KVL

:

mAmARR

VVI

II

III

IRVIRV

th

thC

BC

CBE

EBthth

97.09716251.04)1(

04

:

VIRIRVVIRVIRV CCCCCEECECCC 3.11

43,043

CEsatCE VVV .