UGC Electronic Science Paper 2 June 2007
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Transcript of UGC Electronic Science Paper 2 June 2007
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ELECTRONIC SCIENCE
PAPER-II
Note : This paper contains fifty (50) objective-type questions, each question carryingtw o (2) marks_ Attempt all of them.
1 . Monolithic transistors ar e fanned in th e epitaodal n-layer :
(A) by oxidation process
(B) by evaporation process
(C) by successive impurity diffusions
(D) i n open operation
2. The most popular fonn of IC package is :
(A) T0-5
(B) D IL
(C) Flat pack
(D) Disc pack
3. A unit ramp furu:tion when integrated yields :
(A) unit parabolic function
(B) unit ramp function
(C) unit doublet
(D) unit impulse function
4. The frequency range between tw o half power frequeru:ies is tenned as :
(A) damping coefficient
(B) selectivity
(C) bandwidth
(D) cut-off
5. Bootstrap is concemf
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6. The 4 - bit group that is used in excess- 3 code is :
(A) 0001
(B) 0011
(Q 0010
(D) 1110
7. In T flip flop, Q becomes Q when it s input is :
(A) O o r1
~ ) 0
(C)1
(D) 0 an d 1
8. Transistor amplifier configuration which simultsTif
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11. The input power factor of a cyclo converter is :
(A) high
~ ) low
(C) always equal to unity
(D) leading
12. A clipper:
(A) removes part of th e input signal
(B) modifies the shape of th e input signal
(C) increases DC value of the input signal
(D) reduces DC value of th e input signal
13. The carrier oscillator of a directly modulated FM transmitter generates a :
(A) sine wave
~ ) triangular wave
(C) ramp wave
(D) pwl&>
14. Pre-emphasis and de-emphasis circuits are used to :
(A) make the voice sound clearer
(B) increase the percentage of modulation
(C) increase the modulation index
(D) improve S/N ratio at the receiver
15. Feedback control systems are :
(A) low pass filters
(B) high pass filters
(C) band pass filters
(D) band reject filters
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16. The effect of adcling poles and zeros can be studied quickly fo r deterrrrinktg phase andgain margin from :
(A) Nicholas plot
(B) Bode plot
(Q l\1agnitude versus phase plot
(D) Nyquistplot
17. In computer technology, 1M byte memory means :
(A) 10 00 000 bytes
(B) 10 00 024 bytes
(Q 10 24 000 bytes
(D) 10 4S 576 bytes
18. A n insbuction register is a storage for :
(A) location of data in memory
(B) location of instruction in memory
(Q binary code for the operation to be performed
(D) address of th e next insbuction to be executed
19. A n active lo w signal WTA is not needed from microprocessor to service which of thefollowing interrupt requesta ?
(A) TRAP
(B) INIR
(Q RST 7.5
(D) RST 5.5
20 . The address bus of Intel 8085 is 16 bit wide and hence the memory which can beaccessed by this address bu s is :
(A) 2 k bytes
~ ) 4 k bytes
(Q 10 k bytes
(D) 64 k bytes
J 8 807 P.T.O.
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(Questions 21 to 30); The followi..g items consi
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27 . Assertion (A) : The Wein bridge ca n be used fo r frequeru:y measurement.
Reason (R) : The Wein bridge uses only capacitors and resistors.
28 . Assertion (A) : The topdownsbuctured programming should be used fo r developingprogrammes.
Reason (R) : The top down sbuctured programming methodology enables us to getreadable and easily provable programs.
29 . Assertion (A) : A demultiplexer ca n be used as a decoder.
Reason (R) : A demultiplexer is built using NAND gates only.
30 .Assertion (A) :
LASERis a low-noise optical source.
Reason (R) : LASER operation is carried out at cryogenic temperatures.
3 1 . Measurement of a non-electrical quantity involves th e following four subsystems :
(i) Amplifier block
(ii) Display block
(iii) Instrumentation block
(iv) Transducer block
Th e correct sequence inwhich these
blocks occuris
:(A) (iv) (i) (rii) (li)
~ ) (iv) (ii) (>) (rii)
(Q (i) (lii) (ri) (lv)(D) (i) (li) (iii) (lv)
32. The following bands are used to identify the microwave frequency r ange1 G H z t o 2 6 G H z :
(i) K
(ii) L
(iii) s(iv) X
Th e correct sequence from lower frequency band to higher frequency band is :
(A) (i) (lv) (rii) (li)
~ ) (ii) (i) (iii) (lv)
(Q (ii) (iii) (lv) (i)(D) (ii) (iv) (>) (rii)
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33 . Th e following semiconductors materials :
(i) Si
"
"
(ii) Ge
(iii) GaAS
(iv) ln P
Th e correct sequence in increasing order of th e majority carrier charge mobility is :
(A) (i) (li) (lii) (lv)
~ ) (iv) (i) (li) (iii)
(C) (i) (li) (lv) (iii)
(D) (i) (lv) (li) (iii)
Th e digital computer data storage media :
(i) Hard disk
(ii) Computer disk
(iii) RA M
(iv) Cache memory
Th e correctsequeru:e for the above media, th e digital data storage speed in descendingorder :
(A) (ii) (i) (lii) (lv)
~ ) (i) (li) (lii) (lv)
(C) (iv) (iii) (ii) (>)
(D) (iv) (iii) (i) (li)
Th e semiconductor devices :
(i) Tunnel diode
(ii) ffiT
(iii) ' JT
(iv) ll\1PATI
Th e correct sequence of their inheren t operating frequency in th e increasing order is :
(A) (ii) (iii) (i) (lv)
~ ) (iii) (ii) (i) (lv)
(C) (ii) (i) (lii) (lv)
(D) (i) (lv) (lii) (li)
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36 . l\1atch List- I with List- II and select th e correct answer using the codes given belowthe list:
U s t - I U s t - II
'i) e - "(a) Value of Inductance(b) Power factor (ii)
roC
''c) Q factor (iii)
roC
(d) Value of Resistance (iv) F n 2 d
Codes ;
'"' (b) (c) (d)
(A) (iv) (ii) (lii) (i)
~ ) (iv) (iii) (ii) (i)
(C) (i) (li) (iii) (lv)
(D) (i) (lii) (lv) (li)
37 . l\1atch List- I with List- II and select the correct answers using the codes given belowth e list:
U s t - I U s t - II
'"' ' JT (i) pinch-off effect
~ ) ffiT (ii) frequeru:y tmUng
(c) Varactor Diode (iii) Tlf
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38 . l\1atch Lis t - I with Lis t - II and select th e correct answer using the codes given belowthe list:
U s t - I
(Maximum Efficiency fu percent)
( ~ ) "~ ) 78.5
(c) '""(d) 00
Codes ;
'"' (b) (c) (d)
(A) (i) (li) (lii) (lv)
~ ) (ii) (i) (lv) (iii)
(C) (ii) (iv) (i) (iii)
(D) (iv) (iii) (ii) (i)
U s t - II
(Amplifier)
(i) O ass - B transformer-coupled
(ii) O ass - ARC-coupled
(iii) O ass - A transformer-coupled
(iv) O ass - D switching mode
39 . l\1atch Lis t - I with Lis t - II and select th e correct answer using the codes given belowthe list:
U s t - I
( ~ ) Passive Network
~ ) Active Network
(c) Lumped Network
(d) Distributed Network
Codes ;
'"' (b) (c) (d)
(A) (iv) (ii) (iii) "') (i) (lii) (ii) (lv)
(C) (iii) (iv) (i) (ri)
(D) (i) (lv) (li) (iii)
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U s t - II
(i) Contain electrically separable passivecircuit elements
(ii) Contains electrically inseparable passivecircuit elements
(iii) Contains circuit elements without energysources
(iv) Contain circuit elements with energy
sources
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40 . l\1atch List- I with List- II and select th e correct answer using the codes given belowthe list:
U s t - I U s t - II
( ~ ) Conducting material (i) Alumina
~ ) Semi-conducting material (ii) Platinum
(c) Ferro-electric material (iii) Silicon
(d) Insulating material (iv) Barium Titanate
Codes ;
'"' (b) (c) (d)
(A) (iv) (i) (rii) (li)
~ ) (i) (lii) (ri) (lv)
(C) (iii) (iv) (i) (li)
(D) (ii) (iii) (iv) (i)
41 . l\1atch List- I with List- II and select th e correct answer using the codes given belowthe list:
U s t - I U s t - II
( ~ ) Ampere's la w (i)dDV x H ~ j + -
"~ ) Faraday's la w (ii) V D ~ p
(c) Gauss' la w for electric field (iii) V B - 0
(d) Gauss' law for m a ~ t i cfield (iv)deV x E ~ - -
"Codes ;'"' (b) (c) (d)
(A) (ii) (iii) "' (lv)
~ ) (iv) (ii) "' (rii)
(C) (i) (lv) (rii) (li)
(D) (i) (lv) (ri) (rii)
J 8 8 0 7 n P.T.O.
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42 . l\1atch Lis t - I with Lis t - II and select th e correct answer using the codes given belowthe list:
U s t - I U s t - I I
( ~ ) Crystal Osdllator (i) Local Osdllator
~ ) Reflex klystron (ii) Narrow-band Oscillator
(c) Saw-tooth generator (iii) Microwave Oscillator
(d) IF amplifier (iv) J\.fixer
Codes ;
'"' (b) (c) (d)
(A) (i) (li) (lii) (lv)
~ ) (ii) (iii) (iv) "'
C) (iv) (i) (lii) (ri)
(D) (ii) (iii) (i) (lv)
43 . l\1atch Lis t - I with Lis t - II and select th e correct answer using the codes given belowthe list:
U s t - I U s t - I I
( ~ ) 8086 (i) 8 - bi t processor
~ ) 8085 (ii) Interlace chip
(c) 8255 (iii) 1 6 - bit processor
(d) 80486 (iv) 64 - bit processor
Codes ;
'"' (b) (c) (d)
(A) (iii) (i) (ii) (lv)
~ ) (i) (li) (lii) (lv)
(C) (iv) (i) (li) (iii)
(D) (ii) (i) (lv) (iii)
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44 . l\1atch List- I with List- II and select th e correct answer using th e codes given belowthe list:
U s t - I U s t - II
( ~ ) Unearity (i) Superposition Theorem
~ ) Structure (ii) Norton's Theorem
(c) Equivalent circuit (iii) Tellegan's Theorem
(d) Bila tera l (iv) Reciprocity Theorem
Codes ;
'"' (b) (c) (d)
(A) (i) (li) (iii) (lv)
~ ) (i) (lii) (ri) (lv)
(Q (ii) (iii) (lv) (i)
(D) (i) (lii) (lv) (li)
45 . l\1atch List- I with List- II and select th e correct answer using the codes given below
the list:
U s t - I U s t - I I
( ~ ) Frequency modulation (i) Envelope detection
~ ) Double sided suppressed signal (ii) Compandingcarrier
(c) PC M (iii) Balanced modulation
(d) Amplitude modulation (iv) fu...emphasis and de-emphasis
Codes ;
'"' (b) (c) (d)
(A) (i) (li) (iii) (lv)
~ ) (i) (li) (iv) (rii)
(Q (iv) (iii) (i) (li)
(D) (iv) (iii) (ii) (i)
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Para Phras&.g (Read the paragraph an d answer the questiom; 46 to 50) ;
The reflex klystron is a low-power, low frequeru:y, microwave osdllator_ I t has
an electron gun which produces an electron beam. Siru:e, th e device is short in length,
it does not require a focussing structure to counteract th e inter-electron repulsive forces_
The electron beam is accelerated toward th e cavity, which has a high positive voltage
applied to i t and acts as th e anode_ Th e electrons overshoot th e gap in this cavity and
continue on to the next electrode, which they Tlf
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48 . The purpose of cathode in microwave tubes is :
(A) to produce electrons
(B) to collect electrons(Q to reduce electrons
(D) to increase electrons
'9. The transit time in the repeller space of a reflex klystron must be n + 4 cycles to ensurethat :
(A) electrons are accelerated by th e gap voltage on their retum.
(B) returning electrons give energy to the gap oscillations.
(Q i t is equal to th e period of the cavity oscillations.
(D) th e repeller is not damaged by striking electrons.
50. The focussing structure is used in microwave tubes to :
(A) produce electron beam.
(B) counter the inter-electron repulsive forces.
(Q protect RF cavity
(D) protect repeller electrode
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