Transport properties of topological insulators
Transcript of Transport properties of topological insulators
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Transport properties of topological insulators
Andrea Droghetti School of Physics and CRANN, Trinity College Dublin, IRELAND
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The algorithm
● Basic course on electronic transport
● Topological insulators (Kane-Mele model/Bi2Se
3)
● Kondo impurity in a topological insulator
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The algorithm
● Basic course on electronic transport
● Topological insulators (Kane-Mele model/Bi2Se
3)
● Kondo impurity in a topological insulator
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Classical transport: Drude model and Ohm's law
● Electrons are viewed as particles in a pinball
● Resistance results from (back) scattering
● Conductivity and resistivity (characteristic of the metal)
● Conductance
Length of the sample >> electron mean free path
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Quantum transport: ballistic regime
Length of the sample < electron mean free path
● Electrons are viewed as waves
● Solve Schrodinger equation and find the eigenmodes
● Calculate transmission probability of the eigenmodes
● “Conductance is transmission”
● Resistance only comes from the contacts
S. Datta, Electronic Transport in Mesoscopic Systems, Cambridge University Press (1995)
Landauer formula
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Quantum transport: ballistic regime
Examples of ballistic conductors
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Quantum transport: ballistic regime
B.J. Van Wees, Phys. Rev. Lett. 60, 848 (1988)
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Quantum transport: ballistic regime
How can we calculate the transmission for “real” systems?
“Conductance is transmission”
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Quantum transport
.
HM H RH L H LM HMR+ + + +
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Quantum transport
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HMRL
RL
A.R. Rocha et al., Phys. Rev. B 73, 085414 (2006)I. Rungger and S. Sanvito, Phys. Rev. B 78, 035407 (2008)
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Quantum transport
.
RL
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Quantum transport
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● DFT based quantum transport
● Scales to large systems (N>10,000 atoms)
● Many functionals (LDA/GGA, LDA+U, LDA+SIC...)
● Spin-polarized, non-collinear, spin-orbit
● Constrained DFT
● Current induced forces
● Spin-torque
● Andreev reflection
● Molecular dynamics under finite bias (under testing)
● Interfaced with Siesta and with FHI-AIMS (under development)
● GW based transport (under development)
www.smeagol.tcd.ie
The Theoretical Tool: Smeagol
Initial development by A.R. Rocha and S. Sanvito (Dublin) in collaboration with C. Lambert (Lancaster)Actual full-time maintainer I. Rungger (Dublin)
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The algorithm
● Scratch course on electronic transport
● Topological insulators (Kane-Mele model/Bi2Se
3)
● Kondo impurity in a topological insulator
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Application: Topological Insulators
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Application: Topological Insulators
.
F.D.M. Haldane, Phys. Rev. Lett. 61, 2015 (1988)
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Application: Topological Insulators
.
k
Kane-Mele model
C.L. Kane and E.J .Mele, Phys. Rev. Lett., 95, 146802 (2005)k
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Application: Topological Insulators
.
Kane-Mele model
C.L. Kane and E.J. Mele, Phys. Rev. Lett., 95, 146802 (2005)kk
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Application: Topological Insulators
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Kane-Mele model
C.L. Kane and E.J. Mele, Phys. Rev. Lett., 95, 146802 (2005)kk
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Application: Topological Insulators
Edge states are protected by time reversal symmetry
● Kramers degeneracy protects band crossing
● Elastic backscattering is forbidden
● Conservation of Sz not essential
kk
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Application: Topological Insulators
Tra
nspo
rt d
irect
ion
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Application: Topological Insulators
Tra
nspo
rt d
irect
ion
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Application: Topological Insulators
Graphene nanoribbon
Kane-Mele nanoribbon
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Application: Topological Insulators
Tra
nspo
rt d
irect
ion
Infinite-potential barrier
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Application: Topological Insulators
Graphene nanoribbon
Kane-Mele nanoribbonTransmission drops to zero
Edge states are protected by time reversal symmetry
● Kramers degeneracy protects band crossing
● Elastic backscattering is forbidden
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Application: Topological Insulators
Bi2Se
3
Side view Top view
H. Zhang et al., Nat. Phys. 5, 438 (2009)Y. Xia et al., Nat. Phys. 5, 398 (2009)
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Application: Topological Insulators
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Application: Topological Insulators
For Bi2Se
3
A. Narayan, I. Rungger, A. Droghetti and S. Sanvito, in preparation
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The algorithm
● Basic course on electronic transport
● Topological insulators (Kane-Mele model/Bi2Se
3)
● Kondo impurity in a topological insulator
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Application: Topological Insulators
Tra
nspo
rt d
irect
ion
Correlated impurity
Application: Topological Insulators
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Kondo effect
Tra
nspo
rt d
irect
ion
Correlated many-electron state
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Application: Topological InsulatorsKondo effect
In metals In single molecules devices
L. Kouwenhoven and L.Glazman,Revival of Kondo effect, Physics World, January 2001
A.C. HewsonThe Kondo Problem to Heavy Fermion, Cambridge University Press 1993
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Dyson Equation
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The algorithm
Continuous-time quantum Monte Carlo
Analytic continuation
E.Gull, A.J. Millis, A.I. Lichtenstein, A.N. Rubtsov, M. Troyer, P. Werner, Rev. Mod. Phys. 83, 349 (2011)
Pade approximation
H.J. Vidberg & J.W. Serene, J. Low Temp. Phys. 29, 179 (1977)
Maximum entropy method
M. Jarrell & J.E. Gubernatis, Phys. Reports 269, 133 (1996)
Stochastic optimization
A.S. Mishchenko, Phys. Rev. B 269, 62 (2000)
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The algorithm
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The algorithm
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The algorithm
Transmission
A. Droghetti, I. Rungger, S. Sanvito, in preparation
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The algorithmConclusions
● “Conductance is transmission”.
● Numerical demonstration that back-scattering is forbidden in topological insulators in accordance with low-energy models.
● Kondo screening “protects” the edge state from back-scattering even in presence of magnetic impurities.
● The presented scheme, which allows to study zero-bias transport properties of Kondo systems, can be easily implemented in a DFT+transport code.
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Ivan Rungger (Smeagol code maintainer)
Awadhesh Narayan (DFT calculations for Bi2Se
3)
Stefano Sanvito (the boss)
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go raibh maith agat(“a thousand good things would be on you”)