TOYODA GOSEI TECHNICAL REVIEW VOL.48 NO.2 …...TOYODA GOSEI TECHNICAL REVIEW VOL.48 NO.2 2006...
Transcript of TOYODA GOSEI TECHNICAL REVIEW VOL.48 NO.2 …...TOYODA GOSEI TECHNICAL REVIEW VOL.48 NO.2 2006...
36
43
49
Low HAPs 51
53
55
57
59
NTT 61
‘07 63
65
Technical Review Present Status and Future Prospect of III-Nitride
Heterojunction Transistors Masaaki Kuzuhara 36 Koji Hirata Masayoshi Kosaki Naoki Shibata
Durability Evaluation of High Molecular Material in a Vehicle Katsumasa Takeuchi 43 Hidenori Hayashi Hidekazu Kurimoto
New Technologies Satin like Plating Yuji Hotta 49
Yosuke Maruoka Takayasu Ido Hiroshi Watarai
Low HAPs Primer (for MACT Regulation) Takashi Sekiya 51
New Products Steering Wheel with Heater Element Tetsuo Yasuda 53
Koji Sakurai Low Pressure Loss Cool Air Intake Duct Hiroshi Iwao 55
Isao Takada
Hybrid Wheel Kazuo Takeda 57 Tetsuya Arakawa Tomokazu Nishikawa
Opening Trim Weather Strip with Special Electrostatic Flocking Mikiya Kuroki 59Kiminori Mine
Cellular Phone Case for NTT DoCoMo Masatoshi Shimada 61
‘07 Model Air Purifier Hideaki Yamaguchi 63
List of Published Papers 65
TOYODA GOSEI TECHNICAL REVIEW VOL.48 NO.2 2006
CONTENTS
36
36
Present Status and Future Prospect of III-Nitride Heterojunction Transistors
* 1 * 2 * 3 * 4
*1 Masaaki Kuzuhara*2 Koji Hirata*3 Masayoshi Kosaki*4 Naoki Shibata
GaN
3eV2 107cm/s
-V
SiC
Si GaAs
1-3)
(FET)
2002
AlGaN/GaNFET
FED.
FET 1990FET
MESFETAlGaN/GaN
FET
37
37
HEMT
AlGaN/GaN
GaN GaN
GaN AlGaN
AlGaN/GaNGaN
(2DEG)Al Al 25-
30% 1x1013cm-2
AlGaN/GaNAlGaN
SiC
GaN AlN4)
AlGaN/GaN AlGaN Ni/Au
Ti/AlAlGaN
SiNAlGaN/GaN FETFET
2DEG
FET
AlGaN
5)
FET
FET
AlGaN/GaNFET HEMT
FET
Wu SiC(Wg)246mm HEMT(Vdd)120V 4GHz 32.2W/mm
6) OkamotoSiC Wg=48mm
Vdd=53V 2GHz 230W1).Wakejima SiC
Wg=48mm HEMTVdd=45V
2.14GHz 371W2) Wu SiC
GaN
AlGaN
[0001]
PSP
PSP
GaN
AlGaN+ + + + + + + + + + + + + + +
GaN
AlG
aN
Ec
EvG
aN
AlG
aN
Ec
Ev
32.2W/mm
230W
371W
8W
Cree
FED
Cree
163GHz NICT
FED
(6)
(1)
(2)
(7)
(8)
32.2W/mm
230W
371W
8W
Cree
FED
Cree
163GHz NICT
FED
(6)
(1)
(2)
(7)
(8)
Vol.48 No.2 (2006) 38
38
0.15 m HEMT (Wg=1.5mm)Vdd=28V 8W
30GHz 7) Higashiwaki0.06 m
HEMT 5V163GHz 8)
FET V
(G) (D)G-D
G-D
m 100-200V 1,6)
G-D
GaN3.3MV/cm G-D 3 m
1kV
AlGaN/GaNFET
FET
9)
10)
AlGaN11)
AlGaN
SiN AlN Al2O3 TiO2
HfO2
S
AlGaN/GaN
DG
AlGaN/GaN
DS G
AlGaN/GaN
DS G
(a) (b)
39
39
AlGaN/GaN FET
G-D
12)
FET (2DEG)AlGaN
2DEG
G-D
AlGaNG-DG-D 2DEG
FET
GaAs FET13)
G-D
FET 20-30V
FETFET
AlN GaNInN
00
S DG
SiN
GaN
AlGaN
2DEG
(a)
S DG
SiN
2DEGGaN
AlGaN
(b)
S DG
SiN
GaN
AlGaN
2DEG
S DG
SiN
GaN
AlGaN
2DEG
(a)
S DG
SiN
2DEGGaN
AlGaN
(b)
Vol.48 No.2 (2006) 40
40
AlGaN/GaN AlInN/GaNFET
AlN Al InNIn
AlN GaN InN
InN GaN AlN 1880 810310 cm2/VsInN
InN GaN AlN 4.2x107 2.8x107
2.0x107 cm/sInN
InN InN In
AlN 6.2eV
Al 57% AlGaN8MeV/cm
14) AlN Al
In Al
AlGaN/GaNAlInN/GaN
GaN
InInGaN
AlInN
InN InN In
InN
AlInN/InN
(kV/cm)0
0
(107 c
m/s
)
1
2
3
4
5
100 200 300 400 500
InN
AlN
GaN
T=300Kundoped (A)
(eV
)
AlN
GaN
InN3 3.23.1 3.3 3.53.4 3.6
0
1
2
3
4
5
6
7
41
41
In InGaN AlInN/InGaN
CMOS nFET
InNIn InGaN
AlN AlNAl
AlN
AlN AlN AlAlInN/AlGaN
HEMT
n
CPU 100W
ACAC
AC
Si
1MHz (L)(C)
100MHz
L C
Vol.48 No.2 (2006) 42
42
AlGaN/GaN HEMT
1) Y. Okamoto et al., IEEE Trans. Microwave Theory and Tech., 52, pp.2536-2540 (2004).
2) A. Wakejima et al., Electron. Lett., 41, pp.1371-1372 (2005).
3) T. Kikkawa et al., IEEE MTT-S Int. Microwave Symp. Dig., Vol.3, pp.1347-1350 (2004).
4) K. K. Chu et al., IEEE Electron Device Lett., 25, pp.596-598 (2004).
5) T. Kawasaki et al., Extended Abstracts 2005 Int. Conf. SSDM, Kobe 2005, pp.206-207.
6) Y.-F. Wu et al., IEEE Electron Device Lett., 25, pp.117-119 (2004).
7) Y.-F. Wu et al., IEEE 2005 IEDM Tech. Dig., Washington D.C. 2005, pp.593-595.
8) M. Higashiwaki., IEEE Electron Device Lett., 27, pp.16-18 (2006).
9) J. P. Ao et al., IEEE Electron Device Lett., 24, pp.500-502 (2003).
10) K. Shiojima et al., Appl. Phys. Lett., 78 pp. 3636-3638 (2001).
11) H. Hasegawa et al., J. Vac. Sci. & Technol., B20, p.1647 (2002).
12) T. Hashizume, Oyo Butsuri, 73, pp.333-338 (2004).
13) K. Asano et al., IEEE 1998 IEDM Tech. Dig., San Francisco 1998, pp.59-62.
14) A. Nishikawa et al., Extended Abstracts 2006 Int. Conf. SSDM, Yokohama 2006, pp.974-975.
(a)
(b)
43
43
Durability Evaluation of High Molecular Material in a Vehicle
*1 Katsumasa Takeuchi*2 Hidenori Hayashi 1*3 Hidekazu Kurimoto 1
150
1970
Vol.48 No.2 (2006) 44
44
17 1
45
45
15 30 km 10 20
80 60
40
MTBF
Vol.48 No.2 (2006) 46
46
20 30
10
10
47
47
Vol.48 No.2 (2006) 48
48
CAE
(1) ( ) AT 1999
(2) (3)3 1991
(4) ,1985
(5)vol.24 No.3,26
(6)1982
(7)vol.28,No,2,51 1986
(8) ,R&Dvol.36,No.1,61 2001
49
49
Satin like Plating
*1 *2 *3 *4
*1 Yuji Hotta *2 Yosuke Maruoka *3 Takayasu Ido *4 Hiroshi Watarai
Vol.48 No.2 (2006) 50
50
5 100 m
( )
.
51
51
Low HAPs MACT
Low HAPs Primer (for MACT Regulation)
* 1
*1 Takashi Sekiya 3
VOC Volatile Organic Compounds
( HAPsHazardous Air Pollutants)MACT MACT
Maximum Achievable Control Technology
HAPs 188
HAPs
HAPsHAPs
HAPsPP
HAPs 0.22lb-HAPs/lb-Solid
PP Low HAPs
PPCPO
PP
Low HAPs
HAPs VHAPs
Vol.48 No.2 (2006) 52
52
CPO
HAPs
Low HAPs HAPs-
HAPs MACT0.22 lb-HAPs/lb-Solid
- Low HAPs HAPs ( )
Low HAPs
Low HAPsPP
1.16
0.15 0.22
53
53
Steering Wheel with Heater Element
* 1 * 2
*1 Tetsuo Yasuda *2 Koji Sakurai
ON
Vol.48 No.2 (2006) 54
54
ON 30 OFF
30
55
55
Low Pressure Loss Cool Air Intake Duct
*1 Hiroshi Iwao P*2 Isao Takada P
Vol.48 No.2 (2006) 56
56
CAE
CAE
CADCAE
CAE
p.80 1989
57
57
Hybrid Wheel
* 1 * 2 * 3
*1 Kazuo Takeda*2 Tetsuya Arakawa *3 Tomokazu Nishikawa
G/N
G/N
G/N
G/N
A
A
Vol.48 No.2 (2006) 58
58
G/N
10 15
LEXUS SC430G/N
LEXUS GS450h
2
0
1
2
3
4
5
0 100 200 300COST(%)
Hybrid Wheel
1)2)
1)
2)
59
59
Opening Trim Weather Strip with Special Electrostatic Flocking
*1 *2
*1 Mikiya Kuroki*2 Kiminori Mine
Vol.48 No.2 (2006) 60
60
61
61
NTT
Cellular Phone Case for NTT DoCoMo
* 1
*1 Masatoshi Shimada
2005 10 NTT FOMA GPSSA700iS
NTT FOMASA700iS
SA700iS FOMA
103 112.2 QVGA
FOMA GPS
LCD Mg
S KEY
RF KEYXYSA700iS
11
QVGA2.265,536TFT
103 CCD
0.9 EL
miniSD512MB
Mg
RFXY
Vol.48 No.2 (2006) 62
62
LCD Mg
20
SA700iSS
KEY
PL
R PLPL
PLm
KEY Cu+NiSA700iS
GPSCu+Ni XY
XY
XY
QC
NTTSA800i
( )
( )
( )
( )
63
63
’07
’07 Model Air Purifier
* 1
*1 Hideaki Yamaguchi
200
OEM’07
’07
’07
Vol.48 No.2 (2006) 64
64
’07
:2006.08
65
65
List of Published Papers (1)(2005 11 2006 10 ) *
Li NaGaN
***
**
**
50
**
05.12.9
1148
2006LED *
**
*
30
Li Na2 GaN
***
**
**
53
MOVPE GaN *
*
67
66
66
List of Published Papers (2)(2005 11 2006 10 ) *
CAE 1*
**
*
*
172006.5.24
CAE *****
172006.5.24
CAE 3****
*
172006.5.24
CAE***
**
172006.5.24
CAE*
*
***
172006.5.24
AINGaN Si
53
67
67
List of Published Papers (3)(2005 11 2006 10 ) *
AlN Na **
*****
**
53
Sn-MgAIN
**
***
**
****
53
Legibility under reading lights using white LED
M.Yamagichi* K.Yamba* F.Kawasaki M.Nagata
Gerontechnology Vol.3 5
Epitaxial growth of GaN layers on metallic TiN buffer layers
Y. Uchida* K. Ito* S. Tsukimoto* Y. Ikemoto K. Hirata N. Shibata M. Murakami
Journal of Electronic Materials (2006.08)
**
82006.09
48 2
40 1 1998 6 9 1850 1999 41 1
21 C60 LED2003
E
2006 12 14 2006 12 22
452-8564 Tel (052) 400-1055
492-8540 30 Tel (0587) 34-3302
492-8542 Tel (0587) 36-1111
492-8452 1 Tel (0587) 36-5761
437-0213 1310 128 Tel (0538) 85-2165
494-8502 40 Tel (0586) 69-1811
490-1312 710 Tel (0567) 46-2222
100-0005 2 1 308 Tel (03) 3213-5681
532 -0003 1 45 Tel (06) 6391-2691
732-0805 3 35 Tel (082) 264-3887
321-0953 Tel (028) 610-8846