Fiyat Listesi - Dacel Mü · PDF fileANAHTARLAR & DEDEKTÖRLER Anahtarlar
Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella,...
-
Upload
helen-henry -
Category
Documents
-
view
215 -
download
0
Transcript of Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella,...
![Page 1: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/1.jpg)
Total Ionizing Dose Effects in Total Ionizing Dose Effects in 130-nm Commercial CMOS 130-nm Commercial CMOS
Technologies for HEP experimentsTechnologies for HEP experiments
L. Gonella, M. Silvestri, S. Gerardin
on behalf of the
DACEL – CERN collaboration
![Page 2: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/2.jpg)
Perugia, 26/9/2006 S. Gerardin
OutlineOutline
• Introduction & DACEL• Experimental and Devices• TID irradiation (X-rays):
– Core transistors: • Worst-case bias conditions
– NMOSFETs– PMOSFETs
• Impact of bias • Different foundries
– I/O transistors:• Worst-case bias conditions
– NMOSFETs– PMOSFETs
• Impact of bias and foundry• Conclusions
![Page 3: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/3.jpg)
Perugia, 26/9/2006 S. Gerardin
DACELDACEL
• Design And Characterization of deep submicron ELectronic devices for future particle detectors
• Born in 2004• Participating Institutions
– INFN sections:• Bari• Bologna• Firenze• Padova• Torino
• In collaboration with CERN-MIC group
![Page 4: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/4.jpg)
Perugia, 26/9/2006 S. Gerardin
IntroductionIntroduction
• Super LHC radiation environment– Expected up to 100 Mrad in 10 years’ time
• Purpose of this work:– Assess the suitability of commercial deep-submicron/
decananometer CMOS technologies for use in future HEP experiments
![Page 5: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/5.jpg)
Perugia, 26/9/2006 S. Gerardin
DevicesDevices
• MOSFETs manufactured in commercial 130-nm CMOS technologies:– Core transistors: tox=2.2nm
• Different aspect ratio (W\L)• Enclosed Layout Transistors (ELT)
– I/O transistors: tox= 5.2nm
• Different aspect ratio• Enclosed Layout Transistors (ELT)
• Three different suppliers called in the following: A, B, and C
![Page 6: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/6.jpg)
Perugia, 26/9/2006 S. Gerardin
ExperimentalExperimental
• CERN X-ray probe station– X SEIFERT RP149 60-KV
maximum voltage, tungsten target
– Dose rate: ~ 25 krad/s– HP4145B parameter analyzer– Thermal chuck (+5°C to +200°C) – Custom probe card– Switching matrix– LabVIEW software – Fully automated!
![Page 7: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/7.jpg)
Perugia, 26/9/2006 S. Gerardin
Core Transistors:Core Transistors:Worst Case Bias ConditionsWorst Case Bias Conditions
![Page 8: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/8.jpg)
Perugia, 26/9/2006 S. Gerardin
Minimum Size NMOSFETsMinimum Size NMOSFETs
• Increase in off-current (Ileak) up to 3 orders of magnitude
• Large negative shift in the Vth
• TID rebound in Vth and Ileak degradation
Supplier ACore
NMOSFET(linear) W/L=
0.16/0.12µm
-0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
20
40
60
80
100
120
140
I ds [
A]
Vgs
[V]
pre-rad 1 Mrad 5 Mrad 27 Mrad 97 Mrad 190 Mrad
-0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.410-12
10-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
pre-rad 1 Mrad 5 Mrad 27 Mrad 97 Mrad 190 Mrad
I ds [A
]
Vgs
[V]
Source
Drain
Gate
![Page 9: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/9.jpg)
Perugia, 26/9/2006 S. Gerardin
Large-width NMOSFETsLarge-width NMOSFETs
• Increase in off-current (Ileak)
• No shift in the threshold voltage
• TID rebound in the Ileak degradation between 5 and 27 Mrad
-0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.410-1210-11
10-1010-910-810-7
10-610-510-410-3
I ds [A
]
Vgs
[V]
pre-rad 1 Mrad 5 Mrad 27 Mrad 67 Mrad 97 Mrad
Supplier A Core NMOSFET (linear)
W/L= 2/0.12µm
![Page 10: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/10.jpg)
Perugia, 26/9/2006 S. Gerardin
Enclosed Layout NMOSFETsEnclosed Layout NMOSFETs
• Negligible TID effects on Enclosed Layout Transistors
• Very hard gate oxide! (up to 190 Mrad)
Supplier A Core ELT NMOSFET (enclosed)
W min, L=0.12µm
-0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.410-1210-11
10-1010-9
10-810-710-6
10-510-410-3
I ds [
mA
]
Vgs
[V]
pre-rad 1 Mrad 97 Mrad 190 Mrad
Source
Drain
Gate
![Page 11: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/11.jpg)
Perugia, 26/9/2006 S. Gerardin
NMOSFETs:NMOSFETs:VVthth vs dose vs dose
• Negligible TID effects in large-width and enclosed layout NMOSFETs
• Up to -150mV shift in minimum size NMOSFETs (0.16/0.12m)
• TID rebound in the Vth between 1 and 10MradSupplier A
Linear Core NMOSFETs
105 106 107 108 109-160
-140
-120
-100
-80
-60
-40
-20
0
ELT 10/10 10/1 2/0.12 0.8/0.12 0.64/0.12 0.48/0.12 0.32/0.12 0.16/0.12
Vth [
mV
]
TID [rad]
![Page 12: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/12.jpg)
Perugia, 26/9/2006 S. Gerardin
NMOSFETs: INMOSFETs: Ileakleak vs dose vs dose
• No change in ELTs
• Up to 3 orders of magnitude increase for all W/L (non-ELT)
• TID rebound in the degradation between 1 and 10 Mrad
Supplier ACore NMOSFETs
pre-rad 105 106 107 108 10910-10
10-9
10-8
10-7
I leak
[A]
TID [rad]
ELT 10/10 10/1 2/0.12 0.8/0.12 0.64/0.12 0.48/0.12 0.32/0.12 0.16/0.12
![Page 13: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/13.jpg)
Perugia, 26/9/2006 S. Gerardin
Minimum Size PMOSFETsMinimum Size PMOSFETs
• Less severe degradation compared to NMOSFETs• Negative Vth shift• Negligible changes in Ileak
Supplier ACore
PMOSFET W/L=
0.16/0.12µmVds=1.5 V
-1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.210-12
10-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
I ds [A
]
Vgs
[V]
pre-rad 1 Mrad 5 Mrad 25 Mrad 55 Mrad
-1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2
20
40
I ds [
A]
Vgs
[V]
pre-rad 1 Mrad 5 Mrad 25 Mrad 55 Mrad
![Page 14: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/14.jpg)
Perugia, 26/9/2006 S. Gerardin
PMOSFETs:PMOSFETs:VVthth vs dose vs dose
105 106 107 108
-10
0
10
20
30
40
50
Vth [
mV
]
TID [rad]
10/10 10/1 2/0.12 0.8/0.12 0.48/0.12 0.16/0.12
• Negligible effects in large-width and enclosed layout NMOSFETs
• Up to 50mV shift in minimum size MOSFETs (0.16/0.12m)
Supplier A Core PMOSFETs
![Page 15: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/15.jpg)
Perugia, 26/9/2006 S. Gerardin
+
STI: Achilles’ heelSTI: Achilles’ heel
• ELTs almost immune => Very hard gate oxide due to scaling
• Increase in Ileak in Large-Width and Minimum-Size NMOSFETs => positive charge trapped in STI
• Vth larger in narrow channel transistors (Radiation Induced Narrow Channel Effect)
• TID rebound due to charge trapping/interface generation kinetics: maximum degradation between 1 and 10 Mrad
W
STI
Parasitic Channels
+++
+
Main Channel
poly gate
positive trapped charge
Interface states
++++
![Page 16: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/16.jpg)
Perugia, 26/9/2006 S. Gerardin
Core Transistors: Core Transistors: Impact of Bias ConditionsImpact of Bias Conditions
![Page 17: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/17.jpg)
Perugia, 26/9/2006 S. Gerardin
Bias Dependence: Bias Dependence: VVthth
Minimum-Size NMOSFETs• Worst condition:
– Vgs = Vdd
– Vth,max=-150 mV
• Intermediate condition
– Vgs = Vdd/2
– Vth.max=-120 mV
• Best condition
– Vgs = 0 V
– Vth,max=-60mVSupplier A
Core NMOSFETsW/L=0.16/0.12µm
105 106 107 108-160
-140
-120
-100
-80
-60
-40
-20
0
Vth [m
V]
TID [rad]
Vgs
=Vdd
Vgs
=Vdd
/2
Vgs
=0 V
![Page 18: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/18.jpg)
Perugia, 26/9/2006 S. Gerardin
Bias Dependence: IBias Dependence: Ileakleak
Supplier A Core NMOSFETsW/L=0.16/0.12µm
Minimum-Size NMOSFETs• Worst condition:
– Vgs = Vdd
– Ileak,max ↑ = 103x
• Intermediate condition
– Vgs = Vdd/2
– Ileak,max ↑ = 102x
• Best condition
– Vgs = 0 V
– Ileak,max ↑ = 10x
pre-rad 106 107 108
10-10
10-9
10-8
10-7
10-6
I leak
[A]
TID [rad]
Vgs
=Vdd
Vgs
=Vdd
/2
Vgs
=0 V
![Page 19: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/19.jpg)
Perugia, 26/9/2006 S. Gerardin
Core Transistors: Core Transistors: Different FoundriesDifferent Foundries
![Page 20: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/20.jpg)
Perugia, 26/9/2006 S. Gerardin
Different foundries: NMOSFETs Different foundries: NMOSFETs VVthth
• Qualitatively, the same effects
• Quantitatively, softer and harder technologies
• TID rebound occurs at different total doses
• Maximum Vth in minimum size NMOSFETs from 50 mV to 150 mV
Suppliers A,B,C Core NMOSFETs
W/L=0.16/0.12-0.13µm
105 106 107 108 109-160
-140
-120
-100
-80
-60
-40
-20
0
Vth [m
V]
TID [rad]
A 0.16/0.12 B 0.16/0.13 C 0.16/0.12
![Page 21: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/21.jpg)
Perugia, 26/9/2006 S. Gerardin
Different foundries: NMOSFETs IDifferent foundries: NMOSFETs Ileakleak
• Qualitatively, the same effects
• Quantitatively, softer and harder technologies
• TID rebound occurs at different total doses
• Maximum Ileak in minimum size NMOSFETs from 10x to 104xSuppliers A,B,C
Core NMOSFETsW/L=0.16/0.12-0.13µm
pre-rad 105 106 107 108 10910-10
10-9
10-8
10-7
10-6
I leak
[A]
TID [rad]
A 0.16/0.12 B 0.16/0.13 C 0.16/0.12
![Page 22: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/22.jpg)
Perugia, 26/9/2006 S. Gerardin
I/O Transistors:I/O Transistors:Worst Case Bias ConditionsWorst Case Bias Conditions
![Page 23: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/23.jpg)
Perugia, 26/9/2006 S. Gerardin
Minimum Size NMOSFETsMinimum Size NMOSFETs
Supplier AI/O MOSFETs
W/L=0.36/0.24µm
NMOSFET
PMOSFET
• More severe degradation compared to core devices for NMOSFETs and PMOSFETs in terms of Vth and Ileak
• Vth and Ileak in NMOSFETs• Vth in PMOSFETs
0.0 0.4 0.8 1.2 1.6 2.0 2.410-12
10-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
10-3
pre-rad 300 krad 1 Mrad 27 Mrad 97 Mrad 190 Mrad
I ds [A
]
Vgs
[V]
-2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.010-12
10-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
I ds [A
]
Vgs
[V]
pre-rad 1 Mrad 5 Mrad 25 Mrad 65 Mrad
![Page 24: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/24.jpg)
Perugia, 26/9/2006 S. Gerardin
Enclosed LayoutEnclosed Layout
• ELTs degrade as well
• Gate oxide still an issue
• Increase in subthreshold swing: interface traps
Supplier A I/O ELT NMOSFETW min, L=0.12µm
0.0 0.4 0.8 1.2 1.6 2.0 2.410-1210-11
10-1010-910-810-7
10-610-510-410-3
I ds [A
]
Vgs
[V]
pre-rad 1 Mrad 27 Mrad 97 Mrad 190 Mrad
![Page 25: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/25.jpg)
Perugia, 26/9/2006 S. Gerardin
NMOSFETs:NMOSFETs:VVthth vs dose vs dose
105 106 107 108
-400
-300
-200
-100
0
100
Vth [
mV
]
TID [rad]
0.36/0.24 0.8/0.24 0.5/0.24 2/0.24 10/1 10/10 ELT min/0.26
Supplier AI/O NMOSFETs
• Vth up to -400 mV in minimum-size devices
• TID rebound in narrow devices
• Monotonic increase in large-width and ELTs
![Page 26: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/26.jpg)
Perugia, 26/9/2006 S. Gerardin
NMOSFETs:NMOSFETs:IIleakleak vs dose vs dose
• No change in ELTs
• Up to 5 orders of magnitude increase for all W/L (non-ELTs)
• TID rebound in the degradation between 1 and 10Mrad
Supplier AI/O NMOSFETs
pre-rad 105 106 107 108 109
10-11
10-10
10-9
10-8
10-7
10-6
10-5
I lea
k [A]
TID [rad]
0.36/0.24 0.8/0.24 0.5/0.24 2/0.24 10/1 10/10 ELT W=min L=0.26
![Page 27: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/27.jpg)
Perugia, 26/9/2006 S. Gerardin
PMOSFETs:PMOSFETs:VVthth vs dose vs dose
105 106 107 108
0
100
200
300
400
Vth [
mV
]
TID [rad]
10/10 10/1 2/0.24 0.8/0.24 0.5/0.24 0.36/0.24 ELT W=min, L=0.26
• Vth up to 350 mV in minimum-size devices
• Smaller dependence on geometry than NMOSFETs
• Monotonic increase
Supplier AI/O PMOSFETs
![Page 28: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/28.jpg)
Perugia, 26/9/2006 S. Gerardin
Impact of Bias and FoundryImpact of Bias and Foundry
• Bias: dependence similar to that of core transistors– Vth.max(MS NMOSFETs) from -50 mV to -250 mV
– Ileak,max(NMOSFETs) ↑ from 10x to 105x
• Foundry: variability similar to that of core transistors– Vth,max(NMOSFETs) from -400 mV to -60 mV
– Ileak,max(NMOSFETs) ↑ from 102x to 108x
![Page 29: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/29.jpg)
Perugia, 26/9/2006 S. Gerardin
ConclusionsConclusions
• TID effects on Core Transistors– Narrow and short devices most affected– Very hard gate oxide, less hard STI– Large impact of bias conditions during operation– Large foundry to foundry variability
• TID effects on I/O Transistors– Same effects as on Core Transistors + gate oxide still an issue
• 130-nm CMOS is harder than older technologies, and may be up to the challenge of future HEP experiments even without ELTs, but, in this case, needs constant monitoring due to variability from foundry to foundry
![Page 30: Total Ionizing Dose Effects in 130-nm Commercial CMOS Technologies for HEP experiments L. Gonella, M. Silvestri, S. Gerardin on behalf of the DACEL – CERN.](https://reader036.fdocuments.net/reader036/viewer/2022062518/56649e905503460f94b943b7/html5/thumbnails/30.jpg)
Perugia, 26/9/2006 S. Gerardin
Open IssuesOpen Issues
• Batch to batch variability (encouraging preliminary results)
• Annealing and dose rate vs rebound
• Effects of different radiation sources (protons)
• Impact on flicker noise
• Long-term effects on the gate oxide reliability